公开(公告)号：US10600918B2

公开(公告)日：2020-03-24

申请号：US15211218

申请日：2016-07-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Toshihiko Takeuchi ,  Yasumasa Yamane

IPC: H01L29/12 ,  H01L29/51 ,  H01L27/12 ,  H01L29/786 ,  H01L29/06 ,  H01L29/66 ,  H01L29/49 ,  H01L29/423 ,  H01L29/78

Abstract: Provided is a semiconductor device having a structure with which a decrease in electrical characteristics that becomes more significant with miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film, a gate electrode overlapping with the first oxide semiconductor film, a first gate insulating film between the first oxide semiconductor film and the gate electrode, and a second gate insulating film between the first gate insulating film and the gate electrode. In the first gate insulating film, a peak appears at a diffraction angle 2θ of around 28° by X-ray diffraction. A band gap of the first oxide semiconductor film is smaller than a band gap of the first gate insulating film, and the band gap of the first gate insulating film is smaller than a band gap of the second gate insulating film.

公开(公告)号：US10522397B2

公开(公告)日：2019-12-31

申请号：US16354394

申请日：2019-03-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Hideomi Suzawa ,  Sachiaki Tezuka ,  Tetsuhiro Tanaka ,  Toshiya Endo ,  Mitsuhiro Ichijo

IPC: H01L21/768 ,  H01L29/786 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/8258 ,  H01L29/423 ,  H01L29/49 ,  H01L27/06 ,  H01L27/092 ,  H01L27/12

Abstract: A miniaturized transistor is provided. A first layer is formed over a third insulator over a semiconductor; a second layer is formed over the first layer; an etching mask is formed over the second layer; the second layer is etched using the etching mask until the first layer is exposed to form a third layer; a selective growth layer is formed on a top surface and a side surface of the third layer; the first layer is etched using the third layer and the selective growth layer until the third insulator is exposed to form a fourth layer; and the third insulator is etched using the third layer, the selective growth layer, and the fourth layer until the semiconductor is exposed to form a first insulator.

公开(公告)号：US10290745B2

公开(公告)日：2019-05-14

申请号：US15632764

申请日：2017-06-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Akihisa Shimomura ,  Yasumasa Yamane ,  Ryo Tokumaru ,  Yuhei Sato ,  Kazuhiro Tsutsui

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/49 ,  H01L29/51 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02 ,  C23C14/08 ,  C23C14/34 ,  H01L27/12

Abstract: A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm2 and less than or equal to 1E16 molecules/cm2.

公开(公告)号：US20190123208A1

公开(公告)日：2019-04-25

申请号：US16223782

申请日：2018-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Sachiaki TEZUKA ,  Hideomi Suzawa ,  Akihisa Shimomura ,  Tetsuhiro Tanaka

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24

Abstract: A highly reliable semiconductor device including an oxide semiconductor is provided. Oxygen is supplied from a base insulating layer provided below an oxide semiconductor layer to a channel formation region, whereby oxygen vacancies which might be generated in the channel formation region are filled. Further, a protective insulating layer containing a small amount of hydrogen and functioning as a barrier layer having a low permeability to oxygen is formed over the gate electrode layer so as to cover side surfaces of an oxide layer and a gate insulating layer that are provided over the oxide semiconductor layer, whereby release of oxygen from the gate insulating layer and/or the oxide layer is prevented and generation of oxygen vacancies in a channel formation region is prevented.

公开(公告)号：US10192995B2

公开(公告)日：2019-01-29

申请号：US15131298

申请日：2016-04-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Sachiaki Tezuka ,  Tetsuhiro Tanaka ,  Toshiya Endo ,  Mitsuhiro Ichijo

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L27/06 ,  H01L27/108 ,  H01L27/1156 ,  H01L21/8258

Abstract: A semiconductor device includes a semiconductor, a first conductor, a second conductor, a third conductor, a fourth conductor, a first insulator, a second insulator, a third insulator, and a fourth insulator. The first conductor and the semiconductor partly overlap with each other with the first insulator positioned therebetween. The second conductor and the third conductor have regions in contact with the semiconductor. The semiconductor has a region in contact with the second insulator. The fourth insulator has a first region and a second region. The first region is thicker than the second region. The first region has a region in contact with the second insulator. The second region has a region in contact with the third insulator. The fourth conductor and the second insulator partly overlap with each other with the fourth insulator positioned therebetween.

公开(公告)号：US10103271B2

公开(公告)日：2018-10-16

申请号：US15879023

申请日：2018-01-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Yuhei Sato ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L27/12 ,  H01L29/49 ,  H01L29/66

Abstract: A transistor having high field-effect mobility is provided. A transistor having stable electrical characteristics is provided. A transistor having small current in an off state (in a non-conductive state) is provided. A semiconductor device including such a transistor is provided. A first electrode is formed over a substrate, a first insulating layer is formed adjacent to a side surface of the first electrode, and a second insulating layer is formed to cover the first insulating layer and be in contact with at least part of a surface of the first electrode. The surface of the first electrode is formed of a conductive material that does not easily transmit an impurity element. The second insulating layer is formed of an insulating material that does not easily transmit an impurity element. An oxide semiconductor layer is formed over the first electrode with a third insulating layer provided therebetween.

公开(公告)号：US10002866B2

公开(公告)日：2018-06-19

申请号：US15298306

申请日：2016-10-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Yutaka Okazaki

IPC: H01L27/07 ,  H01L27/12 ,  H01L29/94 ,  H01L29/786 ,  H05K1/18 ,  H01G4/10 ,  H01G4/008 ,  H01L29/66 ,  H01L21/8258 ,  H01L27/06 ,  H01L27/115 ,  H01G4/40 ,  H01L27/1156

CPC classification number: H01L27/0733 ,  H01G4/008 ,  H01G4/105 ,  H01G4/40 ,  H01L21/8258 ,  H01L27/0629 ,  H01L27/0688 ,  H01L27/1156 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/66477 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/94 ,  H05K1/18 ,  H05K2201/10015 ,  H05K2201/10083 ,  H05K2201/10166

Abstract: A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.

公开(公告)号：US09991393B2

公开(公告)日：2018-06-05

申请号：US14878121

申请日：2015-10-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Kazuki Tanemura

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/423 ,  H01L29/417 ,  H01L29/45

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696

Abstract: A semiconductor device includes a first conductor, a second conductor, a first semiconductor, a second semiconductor, a third semiconductor, and an insulator. The second semiconductor is in contact with an upper surface of the first semiconductor. The first conductor overlaps with the second semiconductor. The insulator is located between the first conductor and the first semiconductor. The second conductor is in contact with an upper surface of the second semiconductor. The third semiconductor is in contact with the upper surface of the first semiconductor, the upper surface of the second semiconductor, and an upper surface of the second conductor.

公开(公告)号：US09899535B2

公开(公告)日：2018-02-20

申请号：US15292287

申请日：2016-10-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Hideomi Suzawa ,  Yasumasa Yamane ,  Yuhei Sato ,  Sachiaki Tezuka

IPC: H01L29/786 ,  H01L29/16 ,  H01L27/088 ,  H01L27/06 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/1225 ,  H01L29/16

Abstract: To provide a transistor with stable electrical characteristics, a transistor with a low off-state current, a transistor with a high on-state current, a semiconductor device including the transistor, or a durable semiconductor device. The semiconductor device includes a first transistor using silicon, an aluminum oxide film over the first transistor, and a second transistor using an oxide semiconductor over the aluminum oxide film. The oxide semiconductor has a lower hydrogen concentration than silicon.

公开(公告)号：US09543295B2

公开(公告)日：2017-01-10

申请号：US14841773

申请日：2015-09-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshitaka Yamamoto ,  Masayuki Sakakura ,  Tetsuhiro Tanaka ,  Daisuke Matsubayashi

IPC: H01L27/07 ,  H01L29/786 ,  H01L27/06 ,  H01L49/02 ,  H01L23/522 ,  H01L27/115 ,  H01L21/8258

CPC classification number: H01L27/0688 ,  H01L21/8258 ,  H01L23/5223 ,  H01L27/1156 ,  H01L28/40 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device that includes transistors with different threshold voltages is provided. Alternatively, a semiconductor device including a plurality of kinds of circuits and transistors whose electrical characteristics are different between the circuits is provided. The semiconductor device includes a first transistor and a second transistor. The first transistor includes an oxide semiconductor, a conductor, a first insulator, a second insulator, and a third insulator. The conductor has a region where the conductor and the oxide semiconductor overlap with each other. The first insulator is positioned between the conductor and the oxide semiconductor. The second insulator is positioned between the conductor and the first insulator. The third insulator is positioned between the conductor and the second insulator. The second insulator has a negatively charged region.

Abstract translation: 提供了包括具有不同阈值电压的晶体管的半导体器件。 或者，提供包括电路的电特性不同的多种电路和晶体管的半导体器件。 半导体器件包括第一晶体管和第二晶体管。 第一晶体管包括氧化物半导体，导体，第一绝缘体，第二绝缘体和第三绝缘体。 导体具有导体和氧化物半导体彼此重叠的区域。 第一绝缘体位于导体和氧化物半导体之间。 第二绝缘体位于导体和第一绝缘体之间。 第三绝缘体位于导体和第二绝缘体之间。 第二绝缘体具有带负电荷的区域。