公开(公告)号：US09331208B2

公开(公告)日：2016-05-03

申请号：US14635199

申请日：2015-03-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Hiroki Ohara ,  Tatsuya Honda ,  Takatsugu Omata ,  Yusuke Nonaka ,  Masahiro Takahashi ,  Akiharu Miyanaga

IPC: H01L29/88 ,  H01L29/786 ,  H01L29/04 ,  H01L29/10

CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.

公开(公告)号：US09331156B2

公开(公告)日：2016-05-03

申请号：US13710867

申请日：2012-12-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Yusuke Nonaka ,  Hiroshi Kanemura

IPC: H01L29/10 ,  H01L29/24 ,  H01L21/02 ,  H01L29/786 ,  H01L29/04 ,  H01L27/12

CPC classification number: H01L29/247 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: To manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor. An oxide semiconductor film is deposited by a sputtering method with the use of a polycrystalline sputtering target. In that case, partial pressure of water in a deposition chamber before or in the deposition is set to be lower than or equal to 10−3 Pa, preferably lower than or equal to 10−4 Pa, more preferably lower than or equal to 10−5 Pa. Thus, a dense oxide semiconductor film is obtained. The density of the oxide semiconductor film is higher than 6.0 g/cm3 and lower than 6.375 g/cm3.

Abstract translation: 通过给晶体管提供稳定的电特性来制造高度可靠的半导体器件。 通过使用多晶溅射靶的溅射法沉积氧化物半导体膜。 在这种情况下，淀积室内或沉积中的水的分压设定为低于或等于10 -3 Pa，优选低于或等于10 -4 Pa，更优选低于或等于10 -5Pa。因此，获得了致密的氧化物半导体膜。 氧化物半导体膜的密度高于6.0g / cm 3，低于6.375g / cm 3。

公开(公告)号：US09087908B2

公开(公告)日：2015-07-21

申请号：US14255124

申请日：2014-04-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Honda ,  Masashi Tsubuku ,  Yusuke Nonaka ,  Takashi Shimazu ,  Shunpei Yamazaki

IPC: H01L31/062 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/78693

Abstract: The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.

Abstract translation: 包含在栅极绝缘膜附近的氧化物半导体膜中的杂质元素的浓度降低。 此外，提高了栅极绝缘膜附近的氧化物半导体膜的结晶度。 半导体器件包括在氧化物半导体膜上的衬底，源电极和漏电极上的氧化物半导体膜，包含含氧化物的氧化物并形成在氧化物半导体膜上的栅极绝缘膜，以及位于氧化物半导体膜上方的栅电极 栅极绝缘膜。 氧化物半导体膜包括硅的浓度低于或等于1.0at。的区域。 ％，并且至少该区域包括晶体部分。

公开(公告)号：US20150155511A1

公开(公告)日：2015-06-04

申请号：US14548947

申请日：2014-11-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Nobuharu Ohsawa ,  Yusuke Nonaka ,  Takahiro Ishisone ,  Satoshi Seo ,  Takuya Kawata

IPC: H01L51/50 ,  H01L51/00

CPC classification number: H01L51/5044 ,  H01L51/0051 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0067 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/0085 ,  H01L51/5016 ,  H01L51/5028 ,  H01L51/5056 ,  H01L51/5072 ,  H01L2251/5376 ,  H01L2251/5384 ,  H01L2251/558

Abstract: An object of one embodiment of the present invention is to provide a multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance, a separation layer containing a substance having a hole-transport property and a substance having an electron-transport property, and a second light-emitting layer containing two kinds of organic compounds that form an exciplex and a substance that can convert triplet excitation energy into luminescence. Note that a light-emitting element in which light emitted from the first light-emitting layer has an emission spectrum peak on the shorter wavelength side than an emission spectrum peak of the second light-emitting layer is more effective.

Abstract translation: 本发明的一个实施方案的目的是提供一种利用荧光和磷光的多色发光元件，对于实际应用是有利的。 发光元件具有包含主体材料和荧光物质的第一发光层的层叠结构，含有具有空穴传输性的物质的分离层和具有电子传输性的物质，以及 含有形成激元复合物的两种有机化合物的第二发光层和能够将三重态激发能转换成发光的物质。 注意，其中从第一发光层发射的光在比第二发光层的发射光谱峰值更短的波长侧具有发射光谱峰的发光元件更有效。

公开(公告)号：US20150155510A1

公开(公告)日：2015-06-04

申请号：US14548621

申请日：2014-11-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takuya Kawata ,  Nobuharu Ohsawa ,  Yusuke Nonaka ,  Takahiro Ishisone ,  Satoshi Seo

IPC: H01L51/50 ,  H01L51/00

CPC classification number: H01L51/504 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/0085 ,  H01L51/0097 ,  H01L51/5016 ,  H01L51/5028 ,  H01L2251/5376

Abstract: A light-emitting element includes a stack of a first light-emitting layer emitting fluorescent light and a second light-emitting layer emitting phosphorescent light between a pair of electrodes. The second light-emitting layer includes a first layer in which an exciplex is formed, a second layer in which an exciplex is formed, and a third layer in which an exciplex is formed. The second layer is located over the first layer, and the third layer is located over the second layer. An emission peak wavelength of the second layer is longer than an emission peak wavelength of the first layer and an emission peak wavelength of the third layer.

Abstract translation: 发光元件包括发射荧光的第一发光层和在一对电极之间发射磷光的第二发光层的叠层。 第二发光层包括其中形成激元复合体的第一层，形成激元复合体的第二层和形成激光复合体的第三层。 第二层位于第一层之上，第三层位于第二层之上。 第二层的发光峰值波长比第一层的发光峰值波长和第三层的发射峰值波长长。

公开(公告)号：US08860022B2

公开(公告)日：2014-10-14

申请号：US13862716

申请日：2013-04-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi ,  Yusuke Nonaka ,  Yasuharu Hosaka

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225

Abstract: A method for evaluating an oxide semiconductor film, a method for evaluating a transistor including an oxide semiconductor film, a transistor which includes an oxide semiconductor film and has favorable switching characteristics, and an oxide semiconductor film which is applicable to a transistor and enables the transistor to have favorable switching characteristics are provided. A PL spectrum of an oxide semiconductor film obtained by low-temperature PL spectroscopy has a first curve whose local maximum value is found in a range of 1.6 eV or more and 1.8 eV or less and a second curve whose local maximum value is found in a range of 1.7 eV or more and 2.4 eV or less. A value obtained by dividing the area of the second curve by the sum of the area of the first curve and the area of the second curve is 0.1 or more and less than 1.

Abstract translation: 一种用于评估氧化物半导体膜的方法，包括氧化物半导体膜的晶体管的评估方法，包括氧化物半导体膜并且具有良好的开关特性的晶体管，以及可应用于晶体管并使晶体管能够实现的氧化物半导体膜 具有良好的开关特性。 通过低温PL光谱获得的氧化物半导体膜的PL光谱具有第一曲线，其局部最大值在1.6eV以上至1.8eV以下的范围内，第二曲线的局部最大值位于 范围为1.7eV以上且2.4eV以下。 通过将第二曲线的面积除以第一曲线的面积和第二曲线的面积之和而得到的值为0.1以上且小于1。

公开(公告)号：US12225739B2

公开(公告)日：2025-02-11

申请号：US18626592

申请日：2024-04-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Honda ,  Masashi Tsubuku ,  Yusuke Nonaka ,  Takashi Shimazu ,  Shunpei Yamazaki

IPC: G02F1/1337 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/51 ,  H01L29/66 ,  H10K59/121

Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

公开(公告)号：US11864403B2

公开(公告)日：2024-01-02

申请号：US17408588

申请日：2021-08-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro Ishisone ,  Satoshi Seo ,  Yusuke Nonaka ,  Nobuharu Ohsawa

IPC: H10K50/13 ,  H10K50/11 ,  H10K85/30 ,  H10K85/60 ,  H10K101/40 ,  H10K101/10 ,  H10K101/00

CPC classification number: H10K50/131 ,  H10K50/11 ,  H10K50/13 ,  H10K85/342 ,  H10K85/633 ,  H10K2101/10 ,  H10K2101/27 ,  H10K2101/40

Abstract: Provided is a light-emitting element which includes a first electrode, a second electrode over the first electrode, and first and second light-emitting layers therebetween. The first light-emitting layer contains a first host material and a first light-emitting material, and the second light-emitting layer contains a second host material and a second light-emitting material. The first light-emitting material is a fluorescent material, and the second light-emitting material is a phosphorescent material. The level of the lowest triplet excited state (T1 level) of the first light-emitting material is higher than the T1 level of the first host material. A light-emitting device, an electronic device, and a lighting device including the light-emitting element are further provided.

公开(公告)号：US11825718B2

公开(公告)日：2023-11-21

申请号：US17356659

申请日：2021-06-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro Ishisone ,  Satoshi Seo ,  Yusuke Nonaka ,  Nobuharu Ohsawa

IPC: H10K50/12 ,  H10K50/85 ,  H10K59/12 ,  H10K59/35 ,  H10K50/11 ,  H10K50/13 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K50/18 ,  H10K50/81 ,  H10K50/828 ,  H10K50/86 ,  H10K101/10 ,  H10K50/84 ,  H10K85/30 ,  H10K85/60 ,  H10K101/30

CPC classification number: H10K59/35 ,  H10K50/11 ,  H10K50/12 ,  H10K50/13 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K50/171 ,  H10K50/18 ,  H10K50/81 ,  H10K50/828 ,  H10K50/85 ,  H10K50/865 ,  H10K59/12 ,  H10K50/841 ,  H10K85/342 ,  H10K85/615 ,  H10K85/622 ,  H10K85/626 ,  H10K85/633 ,  H10K85/636 ,  H10K85/6572 ,  H10K85/6576 ,  H10K2101/10 ,  H10K2101/30

Abstract: A multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application is provided. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance and a second light-emitting layer containing two kinds of organic compounds and a substance that can convert triplet excitation energy into luminescence. Note that light emitted from the first light-emitting layer has an emission peak on the shorter wavelength side than light emitted from the second light-emitting layer.

公开(公告)号：US11217701B2

公开(公告)日：2022-01-04

申请号：US16812919

申请日：2020-03-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Honda ,  Masashi Tsubuku ,  Yusuke Nonaka ,  Takashi Shimazu ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L29/51 ,  G02F1/1333 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/1343 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L27/32

Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.