FABRICATION METHOD OF SEMICONDUCTOR PACKAGE
    41.
    发明申请
    FABRICATION METHOD OF SEMICONDUCTOR PACKAGE 有权
    半导体封装的制造方法

    公开(公告)号:US20140179067A1

    公开(公告)日:2014-06-26

    申请号:US14190635

    申请日:2014-02-26

    Abstract: A semiconductor package and a fabrication method thereof are disclosed. The fabrication method includes the steps of providing a semiconductor chip having an active surface and a non-active surface opposing to the active surface, roughening a peripheral portion of the non-active surface so as to divide the non-active surface into the peripheral portion formed with a roughened structure and a non-roughened central portion, mounting the semiconductor chip on a chip carrier via a plurality of solder bumps formed on the active surface, forming an encapsulant on the chip carrier to encapsulate the semiconductor chip. The roughened structure formed on the peripheral portion of the non-active surface of the semiconductor chip can reinforce the bonding between the semiconductor chip and the encapsulant, and the non-roughened central portion of the non-active surface of the semiconductor chip can maintain the structural strength of the semiconductor chip.

    Abstract translation: 公开了半导体封装及其制造方法。 该制造方法包括以下步骤:提供具有与活性表面相对的活性表面和非活性表面的半导体芯片,粗糙化非活性表面的周边部分,以将非活性表面划分成周边部分 形成有粗糙结构和非粗糙化的中心部分,通过形成在有源表面上的多个焊料凸块将半导体芯片安装在芯片载体上,在芯片载体上形成密封剂以封装半导体芯片。 形成在半导体芯片的非活性表面的周边部分上的粗糙结构可以加强半导体芯片和密封剂之间的接合,并且半导体芯片的非活性表面的非粗糙化的中心部分可以保持 半导体芯片的结构强度。

    Electronic package and manufacturing method thereof

    公开(公告)号:US12255182B2

    公开(公告)日:2025-03-18

    申请号:US18235079

    申请日:2023-08-17

    Abstract: An electronic package is provided, in which a first electronic element and a second electronic element are disposed on a first side of a circuit structure and a second side of the circuit structure, respectively, where a first metal layer is formed between the first side of the circuit structure and the first electronic element, a second metal layer is formed on a surface of the second electronic element, and at least one thermally conductive pillar is disposed on the second side of the circuit structure and extends into the circuit structure to thermally conduct the first metal layer and the second metal layer. Therefore, through the thermally conductive pillar, heat generated during operations of the first electronic element and the second electronic element can be quickly dissipated to an external environment and would not accumulate.

    Flip-chip process and bonding equipment

    公开(公告)号:US11605554B2

    公开(公告)日:2023-03-14

    申请号:US17392462

    申请日:2021-08-03

    Abstract: A flip-chip process is to provide a pressing jig with a channel, so that the pressing jig grips a chip module by vacuum suction through the channel, and the chip module can be bonded onto a circuit board via a plurality of solder bumps through the pressing jig, and then a heating device is provided to heat the plurality of solder bumps and reflow the plurality of solder bumps. Therefore, the chip module can be vacuum-gripped by the pressing jig to suppress deformation of the chip module, so that the solder bumps can effectively connect to corresponding contacts of the circuit board.

Patent Agency Ranking