Abstract:
Described herein is a microelectromechanical detection structure, provided with: a substrate having a top surface extending in a plane; a detection-electrode arrangement; an inertial mass, suspended above the substrate and the detection-electrode arrangement; and elastic elements, coupling the inertial mass to a central anchorage element fixed with respect to the substrate, in such a way that it is free to rotate about an axis of rotation as a function of a quantity to be detected along a vertical axis, the central anchorage element being arranged at the axis of rotation. A suspension structure is coupled to the detection-electrode arrangement for supporting it, suspended above the substrate and underneath the inertial mass, and is anchored to the substrate via at least one first anchorage region; the fixed-electrode arrangement is anchored to the suspension structure via at least one second anchorage region.
Abstract:
A method for compensating non-linearities of a read signal generated by a variable-capacitance inertial sensor including a first fixed electrode and a second fixed electrode and a mobile electrode, which is spatially arranged between the first and second fixed electrodes and is capacitively coupled to the first and second fixed electrodes, said method comprising the steps of: acquiring the read signal; identifying a first linear component and at least one first nonlinear component of the read signal; a generating a compensated output signal by subtracting the first nonlinear component from the read signal.
Abstract:
A MEMS device including a main die that may be coupled to a secondary die, which forms a frame, and at least one first mobile mass elastically coupled to the frame, the main die forming: a driving stage that drives the first mobile mass so that it oscillates, parallel to a first direction, with frequency-modulated displacements; and a processing stage, which generates an output signal indicating an angular velocity of the MEMS device as a function of displacements parallel to a second direction that are made by the first mobile mass, when driven by the driving stage, on account of a Coriolis force.
Abstract:
A MEMS accelerometric sensor includes a bearing structure and a suspended region that is made of semiconductor material, mobile with respect to the bearing structure. At least one modulation electrode is fixed to the bearing structure and is biased with an electrical modulation signal including at least one periodic component having a first frequency. At least one variable capacitor is formed by the suspended region and by the modulation electrode in such a way that the suspended region is subjected to an electrostatic force that depends upon the electrical modulation signal. A sensing assembly generates, when the accelerometric sensor is subjected to an acceleration, an electrical sensing signal indicating the position of the suspended region with respect to the bearing structure and includes a frequency-modulated component that is a function of the acceleration and of the first frequency.
Abstract:
A magnetic field sensor includes a die and a current generator in the die. The current generator generates a driving current. A Lorentz force transducer is also formed in the die and coupled to the current generator to obtain measurements of a magnetic field based upon the Lorentz force. The magnetic field has a resonance frequency and the current generator drives the Lorentz force sensor with the driving current having a non-zero frequency different from the resonance frequency.
Abstract:
MEMS device having a support region elastically carrying a suspended mass through first elastic elements. A tuned dynamic absorber is elastically coupled to the suspended mass and configured to dampen quadrature forces acting on the suspended mass at the natural oscillation frequency of the dynamic absorber. The tuned dynamic absorber is formed by a damping mass coupled to the suspended mass through second elastic elements. In an embodiment, the suspended mass and the damping mass are formed in a same structural layer, for example of semiconductor material, and the damping mass is surrounded by the suspended mass.
Abstract:
A magnetic-field sensor, including: a die, a current generator in the die. The current generator generating a driving current. A Lorentz force transducer also in the die and being configured to obtain measurements of magnetic field based upon the Lorentz force is coupled to the current generator. The transducer having a resonance frequency. The current generator is such that the driving current has a non-zero frequency different from the resonance frequency.