公开(公告)号：US11900043B2

公开(公告)日：2024-02-13

申请号：US17701520

申请日：2022-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sooyong Lee ,  Dongho Kim ,  Sangwook Kim ,  Jungmin Kim ,  Seunghune Yang ,  Jeeyong Lee ,  Changmook Yim ,  Yangwoo Heo

IPC: G06F30/30 ,  G03F7/00 ,  G06F30/398 ,  G06F30/392 ,  G06F30/27 ,  G06F119/18

CPC classification number: G06F30/398 ,  G03F7/705 ,  G03F7/70441 ,  G06F30/27 ,  G06F30/392 ,  G06F2119/18

Abstract: Disclosed is an operating method of an electronic device which includes receiving a design layout for manufacturing the semiconductor device, generating a first layout by performing machine learning-based process proximity correction (PPC), generating a second layout by performing optical proximity correction (OPC), and outputting the second layout for a semiconductor process. The generating of the first layout includes generating a first after cleaning inspection (ACI) layout by executing a machine learning-based process proximity correction module on the design layout, generating a second after cleaning inspection layout by adjusting the design layout based on a difference of the first after cleaning inspection layout and the design layout and executing the process proximity correction module on the adjusted layout, and outputting the adjusted layout as the first layout, when a difference between the second after cleaning inspection layout and the design layout is smaller than or equal to a threshold value.

公开(公告)号：US11824118B2

公开(公告)日：2023-11-21

申请号：US18060140

申请日：2022-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Sangwook Kim ,  Yunseong Lee ,  Sanghyun Jo ,  Hyangsook Lee

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/51

CPC classification number: H01L29/78391 ,  H01L29/401 ,  H01L29/516

Abstract: Provided are an electronic device and a method of manufacturing the same. The electronic device includes a ferroelectric crystallization layer between a substrate and a gate electrode and a crystallization prevention layer between the substrate and the ferroelectric crystallization layer. The ferroelectric crystallization layer is at least partially crystallized and includes a dielectric material having ferroelectricity or anti-ferroelectricity. Also, the crystallization prevention layer prevents crystallization in the ferroelectric crystallization layer from being spread toward the substrate.

公开(公告)号：US11699765B2

公开(公告)日：2023-07-11

申请号：US17461034

申请日：2021-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Taehwan Moon ,  Hagyoul Bae ,  Seunggeol Nam ,  Sangwook Kim ,  Kwanghee Lee

IPC: H01L29/86 ,  H10K10/50 ,  H10K19/00 ,  H10B69/00

CPC classification number: H01L29/86 ,  H10B69/00 ,  H10K10/50 ,  H10K19/00 ,  H10K19/201

Abstract: A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.

公开(公告)号：US20230207659A1

公开(公告)日：2023-06-29

申请号：US18179598

申请日：2023-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Sangwook Kim ,  Yunseong LEE ,  Jinseong HEO

IPC: H01L29/51 ,  H01L27/06

CPC classification number: H01L29/516 ,  H01L27/0629 ,  H01L28/60 ,  H01L29/513

Abstract: A ferroelectric structure includes a first polarization enhancement film on a ferroelectric film, wherein the ferroelectric film has a first net polarization in a first direction oriented from the ferroelectric film toward the first polarization enhancement film. The first polarization enhancement film has a second net polarization in a second direction crossing the first direction.

公开(公告)号：US20230186066A1

公开(公告)日：2023-06-15

申请号：US18166859

申请日：2023-02-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaechul Park ,  Sangwook Kim

IPC: G06N3/063 ,  H01L25/065 ,  G11C13/00

CPC classification number: G06N3/063 ,  H01L25/0657 ,  G11C13/003 ,  G11C13/0023

Abstract: A neuromorphic apparatus includes a three-dimensionally-stacked synaptic structure, and includes a plurality of unit synaptic modules, each of the plurality of unit synaptic modules including a plurality of synaptic layers, each of the plurality of synaptic layers including a plurality of stacked layers, and each of the plurality of unit synaptic modules further including a first decoder interposed between two among the plurality of synaptic layers. The neuromorphic apparatus further includes a second decoder that provides a level selection signal to the first decoder included in one among the plurality of unit synaptic modules to be accessed, and a third decoder that generates an address of one among a plurality of memristers to be accessed in a memrister array of one among the plurality of synaptic layers included in the one among the plurality of unit synaptic modules to be accessed.

公开(公告)号：US11527635B2

公开(公告)日：2022-12-13

申请号：US16890231

申请日：2020-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunseong Lee ,  Sangwook Kim ,  Sanghyun Jo ,  Jinseong Heo ,  Hyangsook Lee

IPC: H01L29/51 ,  H01L29/78 ,  H01L21/02

Abstract: A ferroelectric thin-film structure includes at least one first atomic layer and at least one second atomic layer. The first atomic layer includes a first dielectric material that is based on an oxide, and the second atomic layer includes both the first dielectric material and a dopant that has a bandgap greater than a bandgap of the dielectric material.

公开(公告)号：US11456351B2

公开(公告)日：2022-09-27

申请号：US17171291

申请日：2021-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taehwan Moon ,  Jinseong Heo ,  Sangwook Kim ,  Yunseong Lee

IPC: H01L29/49 ,  H01L49/02 ,  H01L51/05 ,  H01L29/78 ,  H01L21/02 ,  H01L29/40 ,  H01L27/11507 ,  H01L27/1159

Abstract: Disclosed are a thin film structure and an electronic device including the same. The disclosed thin film structure includes a dielectric material layer between a first material layer and a second material layer. The dielectric material layer includes a dopant in a matrix material having a fluorite structure. The dielectric material layer is uniformly doped with a low concentration of the dopant, and has ferroelectricity.

公开(公告)号：US10187506B2

公开(公告)日：2019-01-22

申请号：US14532506

申请日：2014-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwook Kim ,  Sohmann Kim ,  Youngkou Han

IPC: H04M1/02 ,  H04M1/725 ,  H04W8/18 ,  G06F3/0481 ,  H04W88/06

Abstract: A method of operating an electronic device is provided. The method includes recognizing a number of connection components provided in the electronic device, storing count data corresponding to the recognized number of the connection components in a memory of the electronic device, acquiring the count data from the memory, and displaying application information corresponding to the acquired count data through a display connected to the electronic device.

公开(公告)号：US10121565B2

公开(公告)日：2018-11-06

申请号：US14556344

申请日：2014-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Kyungsang Cho ,  Sangwook Kim ,  Donghyeok Choi

IPC: H01B1/06 ,  B01J13/02 ,  H01B1/10 ,  C03C17/34 ,  B82Y30/00

Abstract: A nanoparticle multilayer thin film is provided in which nanoparticles which are not electrically insulated from each other are spaced apart from one another at a reduced distance. The nanoparticle multilayer film includes: at least one first nanoparticle layer including first nanoparticles that are surface-modified with a cationic metal-chalcogenide compound; and at least one second nanoparticle layer including second nanoparticles that are surface-modified with an anionic metal-chalcogenide compound, wherein the first nanoparticle layer and the second nanoparticle layer are alternately stacked upon one another.

公开(公告)号：US09764320B2

公开(公告)日：2017-09-19

申请号：US14802696

申请日：2015-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Kyungsang Cho ,  Sangwook Kim ,  Donghyeok Choi

IPC: B01J41/02 ,  H01L21/02 ,  B01J41/10

CPC classification number: B01J41/02 ,  B01J41/10 ,  H01L21/02601

Abstract: An anion exchange method using an anion exchange precursor based on a metal-chalcogenide compound is provided. The anion exchange method includes exchanging an anionic element of a nanoparticle with an element X of an anion exchange precursor represented by Na2Xn via a reaction between the anion exchange precursor and the nanoparticle in the presence of a reaction medium, wherein X is at least one element selected from the group consisting of Se, S, and Te, and n is an integer from 2 to 10.