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公开(公告)号:US20240315009A1
公开(公告)日:2024-09-19
申请号:US18386916
申请日:2023-11-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jihoon KIM , Dohyung KIM , Youngjun KIM , Taekjung KIM , Yeonju OH , Jaejin LEE , Dongju CHANG , Seohyeong JANG
IPC: H10B12/00
CPC classification number: H10B12/34 , H10B12/053 , H10B12/315
Abstract: A semiconductor memory device is provided. The semiconductor memory device includes: an active pattern provided on a substrate and enclosed by a device isolation pattern; and a word line crossing the active pattern and the device isolation pattern in a first direction parallel to a bottom surface of the substrate, and including a first gate electrode and a second gate electrode, which are adjacent to each other in the first direction. A second work function of the second gate electrode is greater than a first work function of the first gate electrode.
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公开(公告)号:US20230199878A1
公开(公告)日:2023-06-22
申请号:US18109696
申请日:2023-02-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jongchan KWON , Jeongmin KIM , Jihoon KIM
Abstract: An electronic device transmits a target mode entry notification of the electronic device to a target device, so that each of the target device and the electronic device may execute an application corresponding to the target mode. Also, the electronic device transmits a target mode release notification of the electronic device to the target device, so that each of the target device and electronic device may resume an application in execution before entering the target mode.
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公开(公告)号:US20220337200A1
公开(公告)日:2022-10-20
申请号:US17263044
申请日:2020-10-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyunseok CHOI , Jooseung KIM , Jihoon KIM , Hyoseok NA , Sanghun SIM , Namjun CHO
Abstract: An electronic device and method thereof of are provided to prevent burnout due to overcurrent. An electronic device includes a power amplifier configured to amplify a transmission signal; a battery configured to provide a bias voltage to the at least one power amplifier; and an overcurrent protection circuit configured to prevent overcurrent from flowing through the power amplifier. The overcurrent protection circuit includes a configurer configured to configure a reference current value, based on the power amplifier; a measurer configured to measure a bias current value due to the bias voltage; a comparator configured to compare the measured bias current value with the reference current value; and a controller configured to recognize overcurrent flowing through the power amplifier and control provision of the bias voltage, based on a result of the comparison.
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公开(公告)号:US20220018884A1
公开(公告)日:2022-01-20
申请号:US17294756
申请日:2019-11-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ilpyo HONG , Jihee KANG , Jiyong KIM , Jihoon KIM , Jongin LEE
Abstract: An electronic device, according to one embodiment disclosed in the present disclosure, may be configured to: form a beam in any one direction of a first direction and directions rotated by a first angle on the basis of the first direction; control a device under test (DUT) so as to emit a designated signal by using the formed beam; and check antenna performance of the DUT at least on the basis of intensity measured from a signal measuring device. In addition, various embodiments inferred from the specification are also possible.
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公开(公告)号:US20210159926A1
公开(公告)日:2021-05-27
申请号:US16765813
申请日:2018-11-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jungjoon KIM , Jiyong KIM , Jihoon KIM , Hyoseok NA
Abstract: An electronic device can comprise: a processor; a transceiver connected to the processor; a first front-end unit connected to the transceiver and performing transmission/reception at an LTE low-band frequency; a second front-end unit connected to the transceiver and performing transmission/reception at an LTE middle-band frequency and/or an LTE high-band frequency; a third front-end unit connected to the transceiver and performing transmission/reception at a 5G-band frequency; a diplexer unit connected to the first front-end unit and the second front-end unit; a filter unit connected to the third front-end unit; a first antenna connected to the diplexer unit; a second antenna connected to the filter unit; and a third antenna connected to the third front-end unit.
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公开(公告)号:US20210028152A1
公开(公告)日:2021-01-28
申请号:US16833761
申请日:2020-03-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyuekjae LEE , Jihoon KIM , Jihwan SUH , Soyoun LEE , Jiseok HONG , Taehun KIM , Jihwan HWANG
IPC: H01L25/065 , H01L23/00 , H01L23/16 , H01L23/31 , H01L23/538
Abstract: Provided is a semiconductor package including a semiconductor stack including a first lower chip, a second lower chip, a gap filler disposed between the first lower chip and the second lower chip, and a first upper chip disposed on an upper surface of the first lower chip, an upper surface of the second lower chip, and an upper surface of the gap filler, the first lower chip includes first upper surface pads and a first upper surface dielectric layer, the second lower chip includes second upper surface pads and a second upper surface dielectric layer, the first upper chip includes lower surface pads and a lower surface dielectric layer, and an area of an upper surface of each of the second upper surface pads is greater than an area of a lower surface of each of the lower surface pads.
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公开(公告)号:US20200381830A1
公开(公告)日:2020-12-03
申请号:US16939503
申请日:2020-07-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jihoon KIM , Jiyong KIM , Jongin LEE , Yeonjeong KIM , Hyoseok NA
Abstract: According to various embodiments, an electronic device comprises: a first plate; a second plate facing the opposite direction of the first plate; a housing including a lateral member for encompassing the space between the first plate and the second plate; and an antenna structure, wherein the antenna structure includes: a plurality of insulating layers arranged in a stacked manner so as to be parallel to the first plate; a loop antenna array formed by the insulating layers and/or by the peripheries of the insulating layers; and a wireless communication circuit electrically connected to loop antennas, and configured to transmit and receive a first signal having a first frequency of a range of 3 GHz to 100 GHz.
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公开(公告)号:US20200321686A1
公开(公告)日:2020-10-08
申请号:US16804805
申请日:2020-02-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jihoon KIM , Junghwan Son , Chaejun Lee
Abstract: An electronic device including a housing; a display; a wireless communication circuit comprising a first port, a second port, a third port, and a fourth port, wherein the wireless communication circuit is configured to transmit a first signal having a first frequency via the first port; receive a second signal having the first frequency via the second port; transmit a third signal having a second frequency different from the first frequency via the third port; and receive a fourth signal having the second frequency via the fourth port; and an antenna structure disposed inside the housing, wherein the antenna structure comprises: a conductive pattern; a first node, a second node, and a third node electrically connected to the conductive pattern; a first electrical path; a second electrical path; a third electrical path; a fourth electrical path; a fifth electrical path; a sixth electrical path; and a seventh electrical path.
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公开(公告)号:US20190363745A1
公开(公告)日:2019-11-28
申请号:US16419172
申请日:2019-05-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yongjun AN , Jihoon KIM , Youngmin LEE
Abstract: Provided is an electronic device includes an interface for connection to an external device; and a processor electrically connected to the interface, wherein the at least one processor is configured to: set a first radio frequency (RF) signal port of a first chipset to operate in RF signal transmission mode, and set a second RF signal port of a second chipset to operate in RF signal reception mode; obtain an error of transmission performance of the first RF signal port based on a comparison between a designated transmission reference that is input to the first RF signal port and a characteristic of a first intermediate frequency (IF) signal that is output via the second RF signal port; obtain a first compensation value to enable the transmission performance of the first RF signal port to converge to the transmission reference, on the basis of the error of the transmission performance; and store at least one of the error of the transmission performance and the first compensation value in the first chipset via the interface.
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公开(公告)号:US20170367043A1
公开(公告)日:2017-12-21
申请号:US15535246
申请日:2015-12-10
Inventor: Okhwan LEE , Sunghyun CHOI , Jihoon KIM
CPC classification number: H04W52/0209 , H04W52/02 , H04W52/0203 , H04W52/0206 , H04W52/0235 , H04W84/12 , H04W88/02 , H04W88/08 , Y02D70/00 , Y02D70/14 , Y02D70/142
Abstract: The present invention relates to an apparatus and method for power saving of a terminal in a wireless communication system and, particularly, to an apparatus and method for power saving of a terminal in a wireless LAN system. A method according to an embodiment of the present invention, which is a data transmission and reception method for power saving of a terminal in a wireless LAN system access point, may comprise the steps of: transmitting a control frame including information for channel bonding power saving control; when there is data to be transmitted from a specific terminal, determining whether the corresponding terminal is in a state where a channel bonding power saving control function is activated; when the terminal is in a state where the channel bonding power saving control function is activated, checking whether the terminal is in a dynamic mode; and when the terminal is in the dynamic mode, configuring the data to be transmitted as a data frame for transmitting the data in a channel bonding scheme, and transmitting the data frame.
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