SEMICONDUCTOR PACKAGE
    2.
    发明申请

    公开(公告)号:US20210375823A1

    公开(公告)日:2021-12-02

    申请号:US17142133

    申请日:2021-01-05

    摘要: A semiconductor package includes a base chip and at least one semiconductor chip disposed on the base chip. An adhesive film is disposed between the base chip and the at least one semiconductor chip and is configured to fix the at least one semiconductor chip on the base chip. The adhesive film includes an inner film portion that overlaps the at least one semiconductor chip in a thickness direction of the base chip, and an outer film portion that does not overlap the at least one semiconductor chip in the thickness direction of the base chip. A width of the outer film portion in a direction perpendicular to a lateral edge of the at least one semiconductor chip is substantially uniform within a deviation range of 20% of an average width of the outer film portion.

    SEMICONDUCTOR PACKAGE
    3.
    发明申请

    公开(公告)号:US20220285312A1

    公开(公告)日:2022-09-08

    申请号:US17804110

    申请日:2022-05-26

    摘要: A semiconductor package includes a base chip and at least one semiconductor chip disposed on the base chip. An adhesive film is disposed between the base chip and the at least one semiconductor chip and is configured to fix the at least one semiconductor chip on the base chip. The adhesive film includes an inner film portion that overlaps the at least one semiconductor chip in a thickness direction of the base chip, and an outer film portion that does not overlap the at least one semiconductor chip in the thickness direction of the base chip. A width of the outer film portion in a direction perpendicular to a lateral edge of the at least one semiconductor chip is substantially uniform within a deviation range of 20% of an average width of the outer film portion.

    SEMICONDUCTOR PACKAGE HAVING STACKED SEMICONDUCTOR CHIPS

    公开(公告)号:US20220130801A1

    公开(公告)日:2022-04-28

    申请号:US17568558

    申请日:2022-01-04

    摘要: Provided is a semiconductor package including a semiconductor stack including a first lower chip, a second lower chip, a gap filler disposed between the first lower chip and the second lower chip, and a first upper chip disposed on an upper surface of the first lower chip, an upper surface of the second lower chip, and an upper surface of the gap filler, the first lower chip includes first upper surface pads and a first upper surface dielectric layer, the second lower chip includes second upper surface pads and a second upper surface dielectric layer, the first upper chip includes lower surface pads and a lower surface dielectric layer, and an area of an upper surface of each of the second upper surface pads is greater than an area of a lower surface of each of the lower surface pads.

    SEMICONDUCTOR PACKAGE
    5.
    发明申请

    公开(公告)号:US20220367401A1

    公开(公告)日:2022-11-17

    申请号:US17540519

    申请日:2021-12-02

    摘要: A semiconductor package including a base chip; a semiconductor chip having a lower surface on which connection pads are disposed, the semiconductor chip being mounted on an upper surface of the base chip; a plurality of bumps on the connection pads and electrically connecting the base chip to the semiconductor chip; an adhesive film between the base chip and the semiconductor chip and fixing the semiconductor chip to the base chip; and an encapsulant on the base chip and encapsulating the semiconductor chip, wherein the semiconductor chip includes a central portion spaced apart from the upper surface of the base chip by a first distance, and an edge portion spaced apart from the upper surface of the base chip by a second distance, the edge portion being outside of the central portion, and a ratio of the second distance to the first distance is about 0.8 to about 1.0.

    SEMICONDUCTOR PACKAGE INCLUDING UNDERFILL MATERIAL LAYER AND METHOD OF FORMING THE SAME

    公开(公告)号:US20220344308A1

    公开(公告)日:2022-10-27

    申请号:US17861580

    申请日:2022-07-11

    IPC分类号: H01L25/065 H01L25/00

    摘要: A semiconductor package and a method of forming the same are provided. The semiconductor package includes one or a plurality of chips on a substrate, bumps disposed below each of the one or plurality of chips, an underfill material layer on the substrate, on a side surface of each of the bumps, and extending to side surfaces of the one or plurality of chips, and a mold layer on the substrate and contacting the underfill material layer. The underfill material layer includes a first side portion, a second side portion on the first side portion and having a slope, steeper than a slope of the first side portion, and a third side portion on the second side portion and having a slope that is less steep than a slope of the second side portion.

    SEMICONDUCTOR CHIP, SEMICONDUCTOR PACKAGE INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20240071942A1

    公开(公告)日:2024-02-29

    申请号:US18120826

    申请日:2023-03-13

    IPC分类号: H01L23/538 H01L23/00

    摘要: A semiconductor chip including a semiconductor substrate having first and second surfaces, a transistor on the first surface, a first interlayer dielectric layer on the transistor, a second interlayer dielectric layer on the first interlayer dielectric layer, a wiring line in the second interlayer dielectric layer, a first conductive pad on the second interlayer dielectric layer, a first passivation layer on the second interlayer dielectric layer, a second conductive pad in the first passivation layer, a through via penetrating the semiconductor substrate and the first interlayer dielectric layer to come into connection with the wiring line, a second passivation layer on the second surface, and a third conductive pad in the second passivation layer and connected to the through via. The first passivation layer has a first thickness 0.4 to 0.6 times a second thickness between the first surface and a top surface of the second passivation layer.

    SEMICONDUCTOR PACKAGE INCLUDING UNDERFILL MATERIAL LAYER AND METHOD OF FORMING THE SAME

    公开(公告)号:US20210151410A1

    公开(公告)日:2021-05-20

    申请号:US17036508

    申请日:2020-09-29

    IPC分类号: H01L25/065 H01L25/00

    摘要: A semiconductor package and a method of forming the same are provided. The semiconductor package includes one or a plurality of chips on a substrate, bumps disposed below each of the one or plurality of chips, an underfill material layer on the substrate, on a side surface of each of the bumps, and extending to side surfaces of the one or plurality of chips, and a mold layer on the substrate and contacting the underfill material layer. The underfill material layer includes a first side portion, a second side portion on the first side portion and having a slope, steeper than a slope of the first side portion, and a third side portion on the second side portion and having a slope that is less steep than a slope of the second side portion.

    SEMICONDUCTOR PACKAGE HAVING STACKED SEMICONDUCTOR CHIPS

    公开(公告)号:US20210028152A1

    公开(公告)日:2021-01-28

    申请号:US16833761

    申请日:2020-03-30

    摘要: Provided is a semiconductor package including a semiconductor stack including a first lower chip, a second lower chip, a gap filler disposed between the first lower chip and the second lower chip, and a first upper chip disposed on an upper surface of the first lower chip, an upper surface of the second lower chip, and an upper surface of the gap filler, the first lower chip includes first upper surface pads and a first upper surface dielectric layer, the second lower chip includes second upper surface pads and a second upper surface dielectric layer, the first upper chip includes lower surface pads and a lower surface dielectric layer, and an area of an upper surface of each of the second upper surface pads is greater than an area of a lower surface of each of the lower surface pads.