公开(公告)号：US20250125221A1

公开(公告)日：2025-04-17

申请号：US18658593

申请日：2024-05-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungchan KANG ,  Dongkyun KIM ,  Daehyuk SON ,  Hotaik LEE ,  Seogwoo HONG

IPC: H01L23/473 ,  H01L23/367

Abstract: A semiconductor device includes: a semiconductor chip including a semiconductor integrated circuit; a heat transfer member covering an upper surface of the semiconductor chip; and a plurality of microstructures on an upper surface of the heat transfer member and configured to generate a capillary force to cause a flow of a coolant, wherein a first capillary channel is provided between adjacent microstructures of the plurality of microstructures, and at least one of the plurality of microstructures may include a hollow microstructure in which a second capillary channel is provided.

公开(公告)号：US20250031508A1

公开(公告)日：2025-01-23

申请号：US18908252

申请日：2024-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junsik HWANG ,  Seogwoo HONG ,  Kyungwook HWANG

IPC: H01L33/62 ,  H01L25/075 ,  H01L27/12

Abstract: A micro light emitting device, a display apparatus including the same, and a method of manufacturing the micro light emitting device are disclosed. The micro light emitting device includes a first type semiconductor layer; a light emitting layer provided on the first type semiconductor layer; a second type semiconductor layer provided on the light emitting layer; one or more first type electrodes provided on the second type semiconductor layer; one or more second type electrodes provided on the second type semiconductor layer and spaced apart from the one or more first type electrodes; and a bonding spread prevention portion provided between the one or more first type electrodes and the one or more second type electrodes.

公开(公告)号：US20240203825A1

公开(公告)日：2024-06-20

申请号：US18206472

申请日：2023-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seogwoo HONG ,  Sungchan KANG ,  Daehyuk SON ,  Jeongyub LEE

IPC: H01L23/473 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L23/473 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/16221 ,  H01L2924/16151 ,  H01L2924/16152

Abstract: A semiconductor device includes a semiconductor chip including a semiconductor integrated circuit; a cooling channel including a surface of the semiconductor chip and configured to provide a passage for a coolant to cool the semiconductor chip; and a plurality of flexible capillary patterns on the surface of the semiconductor chip inside the cooling channel and configured to move the coolant by capillary action, wherein each capillary pattern of the plurality of flexible capillary patterns may include a first portion in a length direction of the capillary pattern that contacts and is supported by the surface of the semiconductor chip, and a second portion in the length direction that is spaced apart from and unsupported by the surface of the semiconductor chip, and a curvature of the second portion of each capillary pattern of the plurality of flexible capillary patterns changes according to temperature.

公开(公告)号：US20240203824A1

公开(公告)日：2024-06-20

申请号：US18198506

申请日：2023-05-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daehyuk SON ,  Sungchan KANG ,  Seogwoo HONG

IPC: H01L23/473 ,  H10N30/20

CPC classification number: H01L23/473 ,  H10N30/2047

Abstract: A semiconductor device includes a semiconductor chip including a semiconductor integrated circuit, and a cooling channel formed in the semiconductor chip and providing a moving path for a coolant. An ultrasonic vibrator may be arranged in the cooling channel. The ultrasonic vibrator may vibrate the coolant. By doing so, the stagnation of vapors and/or generation of a vapor film may be reduced or prevented.

公开(公告)号：US20240178195A1

公开(公告)日：2024-05-30

申请号：US17793145

申请日：2022-01-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junsik HWANG ,  Seogwoo HONG ,  Kyungwook HWANG ,  Hyunjoon KIM ,  Joonyong PARK

IPC: H01L25/075 ,  H01L25/16 ,  H01L33/50

CPC classification number: H01L25/0753 ,  H01L25/167 ,  H01L33/50

Abstract: According to an aspect of an embodiment, provided is a micro semiconductor chip transferring substrate including: a mold including a plurality of recesses formed to be recessed in a certain depth from an upper surface; and a surface energy reduction pattern formed in region between the plurality of recesses, on the upper surface, the surface energy reduction pattern including a plurality of uneven patterns. When the micro semiconductor chips are aligned by a wet alignment method, by such surface energy reduction pattern, sliding of the micro semiconductor chips toward the inside of the recesses may be improved.

公开(公告)号：US20230361251A1

公开(公告)日：2023-11-09

申请号：US17900193

申请日：2022-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minchul YU ,  Seogwoo HONG ,  Kyungwook HWANG ,  Junsik HWANG ,  Dongkyun KIM ,  Hyunjoon KIM

IPC: H01L33/44 ,  H01L33/00

CPC classification number: H01L33/44 ,  H01L33/005

Abstract: Provided are a semiconductor device including a passivation layer and a method of fabricating an electronic apparatus including the semiconductor device. The semiconductor device includes a semiconductor device layer including at least one electrode provided at an upper portion thereof and a passivation layer at least partially covering the at least one electrode.

公开(公告)号：US20230215979A1

公开(公告)日：2023-07-06

申请号：US17847637

申请日：2022-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunjoon KIM ,  Dongkyun KIM ,  Dongho KIM ,  Joonyong PARK ,  Seogwoo HONG ,  Kyungwook HWANG ,  Junsik HWANG

IPC: H01L33/38 ,  H01L33/44 ,  H01L25/075 ,  H01L27/15

CPC classification number: H01L33/382 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/44

Abstract: A micro light-emitting element includes a first conductivity type semiconductor layer including a lower surface on which an uneven pattern is formed, an active layer provided on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer provided on the active layer, at least one electrode provided on the second conductivity type semiconductor layer, and a transparent coating layer including a first surface covering the lower surface of the first conductivity type semiconductor layer, and a second surface facing the first surface and having a second surface roughness that is less than a first surface roughness of the lower surface of the first conductivity type semiconductor layer.

公开(公告)号：US20230197912A1

公开(公告)日：2023-06-22

申请号：US17991411

申请日：2022-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Hyunjoon KIM ,  Joonyong PARK ,  Seogwoo HONG ,  Junsik HWANG

IPC: H01L33/50 ,  G02B5/08 ,  H01L25/075 ,  H01L33/60

CPC classification number: H01L33/505 ,  G02B5/08 ,  H01L25/0753 ,  H01L33/502 ,  H01L33/60 ,  H01L2933/0041

Abstract: Provided are a color conversion structure, a display apparatus, and a method of manufacturing a color conversion structure. The color conversion structure includes a bank structure including a groove, a color conversion layer accommodated in the groove, and a cover layer provided on the color conversion layer.

公开(公告)号：US20220344533A1

公开(公告)日：2022-10-27

申请号：US17550851

申请日：2021-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junsik HWANG ,  Kyungwook HWANG ,  Dongho KIM ,  Hyunjoon KIM ,  Joonyong PARK ,  Seogwoo HONG

IPC: H01L33/00

Abstract: A multi-use transfer mold and a method of manufacturing a display apparatus are provided. The multi-use transfer mold includes a transfer substrate and a plurality of grooves provided in the transfer substrate, wherein each of the grooves includes a transfer area for accommodating a transfer micro-light-emitting device and a preliminary area for accommodating a preliminary micro-light-emitting device, wherein the preliminary area is connected to the transfer area.

公开(公告)号：US20220293669A1

公开(公告)日：2022-09-15

申请号：US17525587

申请日：2021-11-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonyong PARK ,  Dongho KIM ,  Hyunjoon KIM ,  Seogwoo HONG ,  Kyungwook HWANG ,  Junsik HWANG

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/50 ,  H01L33/58

Abstract: A display apparatus includes a driving substrate including a plurality of grooves, micro light-emitting devices provided in the plurality of grooves and configured to emit light of a first color, and a color conversion layer provided on the micro light-emitting devices and configured to convert the light of the first color into light of at least one second color, wherein the color conversion layer includes light blocking patterns spaced apart from the micro light-emitting devices and spaced apart from each other on a same plane, a nano-porous layer provided between adjacent ones of the light blocking patterns, spaced apart from the micro light-emitting devices, and including a plurality of nano-pores, and quantum dots impregnated in the nano-porous layer and configured to convert the light of the first color into the light of the at least one second color.