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    Near-field transducer with rounded or obtuse corners
    42.
    发明授权
    Near-field transducer with rounded or obtuse corners 有权
    具有圆角或钝角的近场传感器

    公开(公告)号：US09129626B2

    公开(公告)日：2015-09-08

    申请号：US14061934

    申请日：2013-10-24

    Applicant: Seagate Technology LLC

    Inventor： Michael Christopher Kautzky ,  James Gary Wessel ,  Mark Ostrowski ,  Tae-Woo Lee

    IPC: G11B11/00 ,  G11B5/48 ,  G11B13/08 ,  G11B5/31 ,  G11B5/60 ,  G11B5/00 ,  G11B7/12

    CPC classification number: G11B5/4866 ,  G11B5/314 ,  G11B5/6088 ,  G11B7/124 ,  G11B7/126 ,  G11B13/08 ,  G11B2005/0021

    Abstract: Embodiments are directed to an apparatus having an air-bearing surface that is configured to interact with magnetic medium. The apparatus includes a waveguide and a plasmonic near-field transducer positioned at or near the air-bearing surface. The plasmonic near-field transducer is operatively coupled to the waveguide. The plasmonic near-field transducer includes an enlarged region and a peg region. The peg region extends from the enlarged region towards the air-bearing surface. The peg region has at least a portion of a periphery of its cross-sectional shape include curvature or at least one substantially obtuse angle.

    Abstract translation: 实施例涉及具有被配置为与磁介质相互作用的空气轴承表面的装置。 该装置包括位于空气承载表面处或附近的波导和等离子体近场换能器。 等离子体近场换能器可操作地耦合到波导。 等离子体激元近场换能器包括放大区域和钉区域。 销钉区域从扩大区域向空气轴承表面延伸。 钉区域具有其横截面形状的至少一部分周边包括曲率或至少一个基本钝角。

    LASER MOUNTED ON EDGE
    44.
    发明申请
    LASER MOUNTED ON EDGE 有权
    激光安装在边缘

    公开(公告)号：US20150213819A1

    公开(公告)日：2015-07-30

    申请号：US14163632

    申请日：2014-01-24

    Applicant: Seagate Technology LLC

    Inventor： Nils Gokemeijer ,  Edward Charles Gage ,  Roger L. Hipwell ,  Michael Christopher Kautzky ,  Scott Eugene Olson

    IPC: G11B5/48

    CPC classification number: G11B5/4866 ,  G11B5/105 ,  G11B5/6088 ,  G11B2005/0021

    Abstract: An apparatus that includes a slider having a mounting surface, the mounting surface opposite a media-facing surface of the slider. The apparatus includes a laser diode mounted on a side surface to the mounting surface. The laser diode has an active region of the laser diode is disposed substantially perpendicular to the mounting surface.

    Abstract translation: 一种装置，包括具有安装表面的滑块，所述安装表面与所述滑块的面向介质的表面相对。 该装置包括安装在安装表面的侧表面上的激光二极管。 激光二极管具有基本上垂直于安装表面设置的激光二极管的有源区。

    RECORDING HEAD INCLUDING A NEAR FIELD TRANSDUCER
    46.
    发明申请
    RECORDING HEAD INCLUDING A NEAR FIELD TRANSDUCER 有权
    记录头包括一个近场传感器

    公开(公告)号：US20140050058A1

    公开(公告)日：2014-02-20

    申请号：US14062675

    申请日：2013-10-24

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Jie Zou ,  Kaizhong Gao ,  William Albert Challener ,  Mark Henry Ostrowski ,  Venkateswara Rao Inturi ,  Tong Zhao ,  Michael Christopher Kautzky

    IPC: G11B11/105

    CPC classification number: G11B11/10534 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3136 ,  G11B5/314 ,  G11B2005/0021

    Abstract: An apparatus including a near field transducer positioned adjacent to an air bearing surface, the near field transducer including an electrically conductive nitride; a first magnetic pole; and a heat sink, a diffusion barrier layer, or both positioned between the first magnetic pole and the near field transducer, wherein the heat sink, the diffusion barrier or both include rhodium (Rh) or an alloy thereof; ruthenium (Ru) or an alloy thereof titanium (Ti) or an alloy thereof tantalum (Ta) or an alloy thereof tungsten (W) or an alloy thereof borides; nitrides; transition metal oxides; or palladium (Pd) or an alloy thereof.

    Abstract translation: 一种包括邻近空气轴承表面定位的近场换能器的装置，所述近场换能器包括导电氮化物; 第一个磁极; 以及位于第一磁极和近场换能器之间的散热器，扩散阻挡层或两者，其中散热器，扩散阻挡层或二者均包括铑（Rh）或其合金; 钌（Ru）或其合金钛（Ti）或其合金钽（Ta）或其合金钨（W）或其合金硼化物; 氮化物 过渡金属氧化物; 或钯（Pd）或其合金。

    SINGLE-GRAIN NEAR-FIELD TRANSDUCER AND PROCESS FOR FORMING SAME
    48.
    发明申请
    SINGLE-GRAIN NEAR-FIELD TRANSDUCER AND PROCESS FOR FORMING SAME 有权

    公开(公告)号：US20220366934A1

    公开(公告)日：2022-11-17

    申请号：US17877434

    申请日：2022-07-29

    Applicant: Seagate Technology LLC.

    Inventor： Michael Christopher Kautzky ,  Tong Zhao ,  Li Wan ,  Xiaolu Kou

    IPC: G11B5/31 ,  H01L33/00 ,  C30B25/04 ,  G11B5/105 ,  G11B5/127 ,  G11B7/124 ,  G11B5/84

    Abstract: A method comprises forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. The method comprises forming a first bonding layer on the single-crystal-like metal layer. The method also comprises forming a second bonding layer on a dielectric layer of a target substrate, the target substrate comprising one or more recording head subassemblies. The bonding layers may include diffusion layers or dielectric bonding layers. The method further comprises flipping and joining the carrier wafer with the target substrate such that the first and second diffusion layers are bonded and the single-crystal-like metal layer is integrated with the recording head as a near-field transducer.

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