公开(公告)号：US09768318B2

公开(公告)日：2017-09-19

申请号：US15019004

申请日：2016-02-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshinobu Asami ,  Yutaka Okazaki ,  Motomu Kurata ,  Katsuaki Tochibayashi ,  Shinya Sasagawa ,  Kensuke Yoshizumi ,  Hideomi Suzawa

IPC: H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L21/4757 ,  H01L21/47 ,  H01L21/477 ,  H01L33/00

CPC classification number: H01L29/7869 ,  H01L21/47 ,  H01L21/4757 ,  H01L21/477 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78648 ,  H01L33/00

Abstract: A miniaturized transistor, a transistor with low parasitic capacitance, a transistor with high frequency characteristics, or a semiconductor device including the transistor is provided. The semiconductor device includes a first insulator, an oxide semiconductor over the first insulator, a first conductor and a second conductor that are in contact with the oxide semiconductor, a second insulator that is over the first and second conductors and has an opening reaching the oxide semiconductor, a third insulator over the oxide semiconductor and the second insulator, and a fourth conductor over the third insulator. The first conductor includes a first region and a second region. The second conductor includes a third region and a fourth region. The second region faces the third region with the first conductor and the first insulator interposed therebetween. The second region is thinner than the first region. The third region is thinner than the fourth region.

公开(公告)号：USD784979S1

公开(公告)日：2017-04-25

申请号：US29497466

申请日：2014-07-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Designer： Shunpei Yamazaki ,  Kensuke Yoshizumi

公开(公告)号：USD738367S1

公开(公告)日：2015-09-08

申请号：US29443830

申请日：2013-01-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Designer： Shunpei Yamazaki ,  Kensuke Yoshizumi

公开(公告)号：USD724580S1

公开(公告)日：2015-03-17

申请号：US29447198

申请日：2013-03-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Designer： Shunpei Yamazaki ,  Kensuke Yoshizumi ,  Hideki Uochi ,  Yoshiaki Oikawa

公开(公告)号：US20130221356A1

公开(公告)日：2013-08-29

申请号：US13768753

申请日：2013-02-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kensuke Yoshizumi

IPC: H01L27/04

CPC classification number: H01L27/1207 ,  G11C16/10 ,  H01L21/84 ,  H01L27/04 ,  H01L27/0688 ,  H01L27/108 ,  H01L27/10805 ,  H01L27/11521 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/1203 ,  H01L29/24 ,  H01L29/42384

Abstract: A semiconductor device is described, which includes a first transistor, a second transistor, and a capacitor. The second transistor and the capacitor are provided over the first transistor so as to overlap with a gate of the first transistor. A semiconductor layer of the second transistor and a dielectric layer of the capacitor are directly connected to the gate of the first transistor. The second transistor is a vertical transistor, where its channel direction is perpendicular to an upper surface of a semiconductor layer of the first transistor.

Abstract translation: 描述了一种半导体器件，其包括第一晶体管，第二晶体管和电容器。 第二晶体管和电容器设置在第一晶体管上，以与第一晶体管的栅极重叠。 第二晶体管的半导体层和电容器的电介质层直接连接到第一晶体管的栅极。 第二晶体管是垂直晶体管，其沟道方向垂直于第一晶体管的半导体层的上表面。

公开(公告)号：US20250138324A1

公开(公告)日：2025-05-01

申请号：US19006799

申请日：2024-12-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takayuki Ikeda ,  Shuichi Katsui ,  Yoshiaki Oikawa ,  Kensuke Yoshizumi

IPC: G02B27/01 ,  A61B5/00 ,  G06F3/01

Abstract: An electronic device with reduced power consumption is provided. A multifunction electronic device that is easily reduced in weight or size is provided. A composite device includes a sensor device and a display device. The sensor device includes a first communication portion and a sensor portion and can be worn on a human body. The display device includes a display portion, a second communication portion, and a control portion. The first communication portion has a function of transmitting a signal including information obtained by the sensor portion. The second communication portion has a function of receiving the signal. The control portion has a function of returning from a resting state in accordance with the signal. The control portion has a function of generating first image data on the basis of the information and outputting the first image data to the display portion. The display portion has a function of displaying an image on the basis of the first image data.

公开(公告)号：US12277874B2

公开(公告)日：2025-04-15

申请号：US18502413

申请日：2023-11-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kensuke Yoshizumi ,  Ryota Tajima

IPC: H04N7/18 ,  B60J3/02 ,  B60R11/00 ,  B60R11/02 ,  G09F21/04 ,  G09G3/00 ,  G09G3/20 ,  H10K102/00

Abstract: A display device or a driving support system which enables a driver to obtain information easily is provided. A display device or a driving support system which is unlikely to impose a burden on a driver is provided. A display device or a driving support system which is suitable for space saving is provided. A display device or a driving support system which is capable of large-area display is provided. A display device or a driving support system which does not impair the aesthetic appearance of the car interior is provided. The display device includes a display panel which has flexibility and can be transformed between a first form and a second form, and a driving means having a function of reversibly changing the display panel between the first form and the second form. The first form is a form in which a display surface of the display panel is suspended, and the second form is a form in which the display panel is stored upward.

公开(公告)号：US12229461B2

公开(公告)日：2025-02-18

申请号：US18038250

申请日：2021-11-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Yoshiaki Oikawa ,  Kensuke Yoshizumi

IPC: G06F3/14 ,  G02B27/01 ,  G06F3/04815 ,  G06T17/00

Abstract: A display device with a novel structure, a display system with a novel structure, or operation methods of them is/are provided. The operation method of the display system including a first display device and a second display device includes the following steps: a first step of connecting the first display device and the second display device by wireless communication; a second step of transmitting first image data displayed on the first display device to the second display device; a third step of displaying, on the second display device, second image data obtained by processing at least part of the first image data; a fourth step of stopping display on the first display device; and a fifth step of processing the second image data in accordance with a manipulation with the second display device.

公开(公告)号：US12225761B2

公开(公告)日：2025-02-11

申请号：US17043781

申请日：2019-04-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hisao Ikeda ,  Tomoya Aoyama ,  Kensuke Yoshizumi

IPC: H10K50/856 ,  G06F1/16 ,  H10K59/131 ,  G02B27/01

Abstract: A high-resolution display device is provided. The display device includes a plurality of light-emitting units emitting light of different colors. The light-emitting unit has a microcavity structure and intensifies light with a specific wavelength. In the light-emitting units emitting light of different colors, reflective layers with different thicknesses are formed, an insulating layer is formed to cover the reflective layers, and then a top surface of the insulating layer is subjected to planarization treatment, whereby an insulating layer with different thicknesses is formed. After that, light-emitting elements emitting white light are formed over the planarized top surface of the insulating layer to overlap with the respective reflective layers, whereby the light-emitting units that intensify different colors due to different optical path lengths are separately formed.

公开(公告)号：US12199186B2

公开(公告)日：2025-01-14

申请号：US18378688

申请日：2023-10-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kenichi Okazaki ,  Masami Jintyou ,  Kensuke Yoshizumi

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/265 ,  H01L21/266

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided.
The semiconductor device includes a semiconductor layer, a first insulating layer, and a first conductive layer. The first insulating layer is provided over the semiconductor layer. The first conductive layer is provided over the first insulating layer. The semiconductor layer includes a first region that overlaps with the first conductive layer and the first insulating layer, a second region that does not overlap with the first conductive layer and overlaps with the first insulating layer, and a third region that overlaps with neither the first conductive layer nor the first insulating layer. The semiconductor layer contains a metal oxide. The second region and the third region contain a first element. The first element is one or more elements selected from boron, phosphorus, aluminum, and magnesium. The first element exists in a state of being bonded to oxygen.