公开(公告)号：US10796903B2

公开(公告)日：2020-10-06

申请号：US16194664

申请日：2018-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L21/02 ,  H01L29/786 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  G02F1/1333 ,  H01L27/32

Abstract: To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The oxide semiconductor film includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, and a third oxide semiconductor film over the second oxide semiconductor film. The first to third oxide semiconductor films contain the same element. The second oxide semiconductor film includes a region where the crystallinity is lower than the crystallinity of one or both of the first oxide semiconductor film and the third oxide semiconductor film.

公开(公告)号：US10693014B2

公开(公告)日：2020-06-23

申请号：US15421657

申请日：2017-02-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Daisuke Kurosaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/51 ,  H01L27/32 ,  H01L29/24 ,  H01L29/49

Abstract: A change in electrical characteristics is inhibited and reliability is improved in a semiconductor device using a transistor including an oxide semiconductor. One embodiment of a semiconductor device including a transistor includes a gate electrode, first and second insulating films over the gate electrode, an oxide semiconductor film over the second insulating film, and source and drain electrodes electrically connected to the oxide semiconductor film. A third insulating film is provided over the transistor and a fourth insulating film is provided over the third insulating film. The third insulating film includes oxygen. The fourth insulating film includes nitrogen. The amount of oxygen released from the third insulating film is 1×1019/cm3 or more by thermal desorption spectroscopy, which is estimated as oxygen molecules. The amount of oxygen molecules released from the fourth insulating film is less than 1×1019/cm3.

公开(公告)号：US10580662B2

公开(公告)日：2020-03-03

申请号：US16270624

申请日：2019-02-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masami Jintyou ,  Junichi Koezuka ,  Takashi Hamochi ,  Yasuharu Hosaka

IPC: H01L21/00 ,  H01L21/385 ,  H01L21/02 ,  H01L21/44 ,  H01L21/443 ,  H01L21/4757 ,  H01L29/04 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  H01L29/51

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

公开(公告)号：US10304919B2

公开(公告)日：2019-05-28

申请号：US15966640

申请日：2018-04-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuhiro Jinbo ,  Kohei Yokoyama ,  Yuki Tamatsukuri ,  Naoto Goto ,  Masami Jintyou ,  Masayoshi Dobashi ,  Masataka Nakada ,  Akihiro Chida ,  Naoyuki Senda

IPC: H01L27/32 ,  H01L51/52

Abstract: To provide a display device with a manufacturing yield and/or a display device with suppressed mixture of colors between adjacent pixels. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, and an adhesive layer. The first insulating layer includes a first opening. The second insulating layer includes a second opening. The first opening and the second opening are provided between the first pixel electrode and the second pixel electrode. In a top view, a periphery of the second opening is positioned on an inner side than a periphery of the first opening. The adhesive layer has a region overlapping with the second insulating layer below the second insulating layer.

公开(公告)号：US10249768B2

公开(公告)日：2019-04-02

申请号：US15935324

申请日：2018-03-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Daisuke Kurosaki ,  Masataka Nakada ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12

Abstract: The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.

公开(公告)号：US10204798B2

公开(公告)日：2019-02-12

申请号：US15431002

申请日：2017-02-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masami Jintyou ,  Junichi Koezuka ,  Takashi Hamochi ,  Yasuharu Hosaka

IPC: H01L21/00 ,  H01L21/385 ,  H01L21/02 ,  H01L21/44 ,  H01L21/443 ,  H01L21/4757 ,  H01L29/04 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  H01L29/51

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

公开(公告)号：US20180190825A1

公开(公告)日：2018-07-05

申请号：US15907315

申请日：2018-02-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66

Abstract: The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The first conductive layer and the second conductive layer are connected to the oxide semiconductor layer. The second insulating layer includes a region in contact with the oxide semiconductor layer, and the third conductive layer includes a region in contact with the second insulating layer. The oxide semiconductor layer includes first to third regions. The first region and the second region are separated from each other, and the third region is located between the first region and the second region. The third region and the third conductive layer overlap with each other with the second insulating layer located therebetween. The first region and the second region include a region having a higher carbon concentration than the third region.

公开(公告)号：US09954117B2

公开(公告)日：2018-04-24

申请号：US15661040

申请日：2017-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Takashi Hamochi ,  Yasutaka Nakazawa ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/24 ,  H01L29/417 ,  H01L27/12 ,  H01L29/45 ,  H01L27/32

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/7869 ,  H01L2029/7863

Abstract: A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is provided. A semiconductor device including an oxide semiconductor and having large on-state current is provided. The semiconductor device includes an oxide insulating film, an oxide semiconductor film over the oxide insulating film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film between the source electrode and the drain electrode, and a gate electrode overlapping the oxide semiconductor film with the gate insulating film. The oxide semiconductor film includes a first region overlapped with the gate electrode and a second region not overlapped with the gate electrode, the source electrode, and the drain electrode. The first region and the second region have different impurity element concentrations. The gate electrode, the source electrode, and the drain electrode contain the same metal element.

公开(公告)号：US09927654B2

公开(公告)日：2018-03-27

申请号：US14678037

申请日：2015-04-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masami Jintyou ,  Yamato Aihara

IPC: H01L29/786 ,  G02F1/1343 ,  G02F1/1335 ,  G02F1/1333 ,  G02F1/1368 ,  H01L27/12

CPC classification number: G02F1/133553 ,  G02F1/133345 ,  G02F1/133524 ,  G02F1/133555 ,  G02F1/1336 ,  G02F1/13439 ,  G02F1/1368 ,  H01L27/1225

Abstract: It is an object to provide a display device of which image display can be favorably recognized. Another object is to provide a manufacturing method of the display device with high productivity. Over a substrate, a pixel electrode that reflects incident light through a liquid crystal layer, a light-transmitting pixel electrode, and a structure whose side surface is covered with a reflective layer and which is positioned to overlap with the light-transmitting pixel electrode are provided. The structure is formed over a light-transmitting etching-stop layer, and the etching-stop layer remains below the structure as a light-transmitting layer.

公开(公告)号：US09917116B2

公开(公告)日：2018-03-13

申请号：US15601330

申请日：2017-05-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke Kubota ,  Ryo Hatsumi ,  Masami Jintyou ,  Takumi Shigenobu ,  Naoto Goto

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/786 ,  H01L29/45 ,  H01L49/02 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G06F3/041 ,  G06F3/044 ,  H01L29/24

CPC classification number: H01L27/1255 ,  G02F1/13306 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13415 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04108 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/127 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.