公开(公告)号：US4591780A

公开(公告)日：1986-05-27

申请号：US559467

申请日：1983-12-08

申请人： Kazuji Yamada ,  Ryoichi Kobayashi ,  Yasuo Nagai ,  Isao Shimizu ,  Kanji Kawakami

发明人： Kazuji Yamada ,  Ryoichi Kobayashi ,  Yasuo Nagai ,  Isao Shimizu ,  Kanji Kawakami

IPC分类号： H03F3/343 ,  G05F3/26 ,  G05F3/30 ,  H03F3/34 ,  H03F3/347 ,  G05F3/20

CPC分类号： G05F3/30 ,  G05F3/265

摘要： A current source device controls a rate of change of current flowing through a load so that the change rate of the current is equal to a change rate of a fluctuating supply voltage. A first transistor is fed with the supply voltage via a first resistor connected to its collector and a second resistor connected to its emitter. A second transistor has a base connected to a base of the first transistor, an emitter connected to a third resistor and a collector connected to a load. A current to the load is fed from the supply voltage via the load, the collector and emitter of the second transistor and the third resistor. The collector and base of the first transistor are respectively connected to a base and an emitter of a third transistor having a collector fed with the supply voltage. The ratio between a voltage drop caused across the second resistor by a reference current flowing through the first resistor, the collector and emitter of the first transistor and the second resistor, and a voltage drop caused across the third resistor by an emitter current of the second transistor, which is substantially equal to a collector current of the second transistor flowing through the load, is set to a predetermined value. The emitter area of the second transistor is enlarged beyond that of the first transistor to obtain a sufficiently large output current.

摘要翻译： 电流源装置控制流过负载的电流的变化率，使得电流的变化率等于电源电压波动的变化率。 第一晶体管经由连接到其集电极的第一电阻器和连接到其发射极的第二电阻器馈送电源电压。 第二晶体管具有连接到第一晶体管的基极的基极，连接到第三电阻器的发射极和连接到负载的集电极。 通过负载，第二晶体管的集电极和发射极以及第三电阻从供电电压馈送到负载的电流。 第一晶体管的集电极和基极分别连接到具有馈送有电源电压的集电极的第三晶体管的基极和发射极。 通过流过第一电阻器的参考电流，第一晶体管的集电极和发射极以及第二电阻器在第二电阻器之间引起的电压降之间的比率以及由第二电阻器的发射极电流引起的第三电阻器的电压降 基本上等于流过负载的第二晶体管的集电极电流的晶体管被​​设定为预定值。 第二晶体管的发射极面积比第一晶体管的发射极面积增大，以获得足够大的输出电流。

公开(公告)号：US4556807A

公开(公告)日：1985-12-03

申请号：US522227

申请日：1983-08-11

申请人： Kazuji Yamada ,  Hideo Sato ,  Kazuo Kato ,  Takao Sasayama ,  Kanji Kawakami ,  Ryosaku Kanzawa

发明人： Kazuji Yamada ,  Hideo Sato ,  Kazuo Kato ,  Takao Sasayama ,  Kanji Kawakami ,  Ryosaku Kanzawa

IPC分类号： G01L9/04 ,  G01B7/16 ,  G01L9/00 ,  G01L9/06

CPC分类号： G01L9/0054 ,  G01L9/065 ,  Y10S323/907

摘要： A pressure transducer is disclosed comprising a pressure sensor portion having gage resistors in bridge formed on a thin diaphragm of a semiconductor substrate, and a power supply connected to the pressure sensor portion for driving the pressure sensor. The power supply includes a first current source for supplying a temperature-dependent current equivalent to the sum of a current almost proportional to the absolute temperature and a current independent of temperature, and a second current source for sinking the current almost proportional to the temperature characteristic of the gage resistors from the current of the first current source. A temperature compensation circuit is additionally provided to drive the bridge circuit by the difference between the temperature-dependent current and the current proportional to the temperature characteristic in a constant-current driving mode, and by a voltage proportional to the current difference when the output of the bridge circuit is connected to an amplifier whose gain is dependent on temperature.

摘要翻译： 公开了一种压力传感器，包括压电传感器部分，该压力传感器部分具有形成在半导体衬底的薄膜上的桥中的量规电阻器，以及连接到用于驱动压力传感器的压力传感器部分的电源。 电源包括用于提供等效于与绝对温度几乎成比例的电流和独立于温度的电流的和的温度相关电流的第一电流源，以及用于将大体上与温度特性成比例的电流吸收的第二电流源 的电流从第一个电流源的电流。 另外提供温度补偿电路以通过温度相关电流和与恒定电流驱动模式中的温度特性成比例的电流之间的差异来驱动桥式电路，并且通过与当电流差异的电流成比例的电压来驱动桥式电路 桥接电路连接到增益取决于温度的放大器。

公开(公告)号：US4495820A

公开(公告)日：1985-01-29

申请号：US426084

申请日：1982-09-28

申请人： Satoshi Shimada ,  Kazuji Yamada ,  Seikou Suzuki ,  Motohisa Nishihara

发明人： Satoshi Shimada ,  Kazuji Yamada ,  Seikou Suzuki ,  Motohisa Nishihara

IPC分类号： G01L9/12 ,  G01L9/00 ,  H01G5/16 ,  H01L27/20 ,  H01G7/00 ,  H01L29/84

CPC分类号： H01L27/20 ,  G01L9/0073 ,  H01G5/16

摘要： A capacitive pressure sensor and its manufacturing method are disclosed. An amplifier is formed on the main surface of a first semiconductor substrate by a diffusion process, and its surface is covered with an insulating film. An electrode is vapor-deposited on the surface of the amplifier and electrically connected to the amplifier through a through hole formed in the insulating film. For forming a diaphragm, the surface of a second semiconductor substrate disposed facing the electrode to form a capacitor, which is opposite to the surface of the second semiconductor substrate facing the electrode, is partially etched away to form a depression. The first and second semiconductor substrates are anodically bonded to each other using a glass layer.

摘要翻译： 公开了一种电容式压力传感器及其制造方法。 通过扩散处理在第一半导体衬底的主表面上形成放大器，并且其表面被绝缘膜覆盖。 电极沉积在放大器的表面上，并通过形成在绝缘膜上的通孔与放大器电连接。 为了形成光阑，第二半导体衬底的与电极相对配置以形成与面向电极的第二半导体衬底的表面相反的电容器的表面被部分蚀刻掉以形成凹陷。 使用玻璃层将第一和第二半导体衬底彼此阳极接合。

公开(公告)号：US4173148A

公开(公告)日：1979-11-06

申请号：US948778

申请日：1978-10-05

申请人： Kazuji Yamada ,  Hideo Sato ,  Tsutomu Okayama ,  Motohisa Nishihara ,  Yoshitaka Matsuoka ,  Katsuya Katohgi ,  Yasumasa Matsuda ,  Satoshi Shimada

发明人： Kazuji Yamada ,  Hideo Sato ,  Tsutomu Okayama ,  Motohisa Nishihara ,  Yoshitaka Matsuoka ,  Katsuya Katohgi ,  Yasumasa Matsuda ,  Satoshi Shimada

IPC分类号： G01L9/04 ,  G01B7/16 ,  G01L1/22 ,  G01L9/00 ,  H01L23/58 ,  H01L29/84

CPC分类号： G01B7/18 ,  G01L1/2281 ,  G01L1/2293

摘要： A bridge circuit with four arms including semiconductor strain gauge elements has input terminals for coupling a DC power supply with a pair of diagonally opposite junctions of the bridge circuit per se and output terminals coupled with a pair of remaining diagonally opposite junctions. Initial zero-point temperature compensators each are connected in series and in parallel to each of semiconductor strain gauge elements on adjacent two arms of the bridge circuit. Temperature compensators for zero-point shift adjustment are each provided between the adjacent arms closer to each output terminal. A temperature compensator for span adjustment is provided between one of the input terminals and the DC power source. A constant current control unit for feeding a constant current to the bridge circuit is provided between the other input terminal and the DC power supply.

摘要翻译： 具有包括半导体应变计元件的四个臂的桥接电路具有用于将直流电源与桥接电路本身的一对斜对置接头连接的输入端子以及与一对剩余的对角线相对的接合部连接的输出端子。 初始零点温度补偿器各自与桥式电路的相邻两个臂上的每个半导体应变计元件串联并联。 用于零点移位调整的温度补偿器分别设置在靠近每个输出端子的相邻臂之间。 在一个输入端子和直流电源之间提供用于量程调节的温度补偿器。 在另一个输入端子和直流电源之间设置用于向桥式电路馈送恒定电流的恒定电流控制单元。

公开(公告)号：US4166384A

公开(公告)日：1979-09-04

申请号：US940077

申请日：1978-09-06

申请人： Yasumasa Matsuda ,  Kazuji Yamada ,  Satoshi Shimada ,  Motohisa Nishihara ,  Tomio Yasuda ,  Masatoshi Tsuchiya ,  Ko Soeno ,  Mitsuo Ai ,  Takeo Nagata ,  Yoshitaka Matsuoka

发明人： Yasumasa Matsuda ,  Kazuji Yamada ,  Satoshi Shimada ,  Motohisa Nishihara ,  Tomio Yasuda ,  Masatoshi Tsuchiya ,  Ko Soeno ,  Mitsuo Ai ,  Takeo Nagata ,  Yoshitaka Matsuoka

IPC分类号： G01L1/26 ,  C21D8/00 ,  C22C38/00 ,  C22C38/10 ,  G01D5/16 ,  G01L1/22 ,  G01L9/00 ,  G01L1/04 ,  G01L1/18

CPC分类号： G01L1/2293 ,  G01L9/0055

摘要： A semiconductor transducer comprising an improved strain-yielding body yielding a strain in response to the impartation of a force or displacement, and a semiconductor strain gauge bonded to the strain-yielding body. The improved strain-yielding body is made of an iron-nickel-cobalt alloy containing 28.2 to 31.0% by weight of nickel and 15.0 to 19.5% by weight of cobalt. This iron-nickel-cobalt alloy is initially heated up to a temperature above 600.degree. C. for the purpose of standard heat treatment for removing its internal strain. After the standard heat treatment, the iron-nickel-cobalt alloy is subjected to cold working at a working rate of more than and including 60%, and is then subjected to heat treatment at a temperature between 350.degree. C. and 600.degree. C. The heat-treated iron-nickel-cobalt alloy is shaped into the predetermined form of the strain-yielding body.

摘要翻译： 一种半导体换能器，其包括响应于施加力或位移而产生应变的改进的应变屈服体以及结合到应变屈服体的半导体应变仪。 改进的应变产生体由含有28.2至31.0重量％的镍和15.0至19.5重量％的钴的铁镍钴合金制成。 为了去除其内部应变，这种铁镍钴合金最初被加热到高于600℃的温度以进行标准热处理。 经过标准热处理后，铁镍钴合金以大于60％的加工速度进行冷加工，然后在350℃〜600℃的温度下进行热处理。 热处理的铁镍钴合金被成形为应变产生体的预定形式。