公开(公告)号：US07060153B2

公开(公告)日：2006-06-13

申请号：US09760499

申请日：2001-01-11

申请人： Shunpei Yamazaki ,  Setsuo Nakajima

发明人： Shunpei Yamazaki ,  Setsuo Nakajima

IPC分类号： B32B38/10

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3283 ,  H01L51/0001 ,  H01L51/524 ,  H01L2227/326 ,  Y10S156/924 ,  Y10S438/977 ,  Y10T156/1189

摘要： To provide a technique for manufacturing a high-performance display device by employing a plastic substrate. A peeling layer is formed on an element-forming substrate, and a semiconductor element and a luminous element are further formed thereon. Then, a fixed substrate (130) is bonded on the luminous element by using a first adhesive (129). The entire substrate in this state is exposed in a gas containing halogen fluoride to thereby remove the peeling layer and separate the element-forming substrate. Thereafter, a bonding substrate (132) that comprises a plastic substrate is bonded in place of the separated element-forming substrate.

摘要翻译： 提供采用塑料基板制造高性能显示装置的技术。 在元件形成基板上形成剥离层，并且还在其上形成半导体元件和发光元件。 然后，使用第一粘合剂（129）将固定基板（130）接合在发光元件上。 在该状态下的整个基板在含有卤素氟化物的气体中露出，从而除去剥离层并分离元件形成基板。 此后，粘合包括塑料基板的接合基板（132）代替分离的元件形成基板。

公开(公告)号：US20060009015A1

公开(公告)日：2006-01-12

申请号：US11221773

申请日：2005-09-09

申请人： Setsuo Nakajima ,  Aiko Shiga ,  Naoki Makita ,  Takuya Matsuo

发明人： Setsuo Nakajima ,  Aiko Shiga ,  Naoki Makita ,  Takuya Matsuo

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/2026 ,  H01L21/6708 ,  H01L21/67167 ,  H01L21/67213 ,  H01L29/66757 ,  H01L29/78675

摘要： A technique for manufacturing TFTs having little dispersion in their electrical characteristics is provided. Contamination of a semiconductor film is reduced by performing oxidation processing having an organic matter removing effect, forming a clean oxide film, after removing a natural oxide film formed on a semiconductor film surface. TFTs having little dispersion in their electrical characteristics can be obtained by using the semiconductor film thus obtained in active layers of the TFTs, and the electrical properties can be improved. In addition, deterioration in productivity and throughput can be reduced to a minimum by using a semiconductor manufacturing apparatus of the present invention.

公开(公告)号：US06893503B1

公开(公告)日：2005-05-17

申请号：US09050182

申请日：1998-03-26

申请人： Hideto Ohnuma ,  Shunpei Yamazaki ,  Setsuo Nakajima ,  Hisashi Ohtani

发明人： Hideto Ohnuma ,  Shunpei Yamazaki ,  Setsuo Nakajima ,  Hisashi Ohtani

IPC分类号： C30B25/04 ,  H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

摘要： A method of producing a semiconductor device which removes catalyst elements from a silicon-containing semiconductor film while maintaining the advantage of low temperature process is provided. The method comprises the steps of: forming an amorphous semiconductor film containing silicon on a glass substrate to crystallize it by using a catalyst element; selectively introducing into the amorphous semiconductor film an impurity belonging to Group 15 to form gettering regions and regions to be gettered; and causing the catalyst element in the silicon film to move to the gettering regions by heat treatment. Through the gettering process, the crystalline silicon film can be obtained in which the concentration of nickel contained therein is sufficiently reduced.

摘要翻译： 提供一种制造半导体器件的方法，该半导体器件在保持低温工艺的优点的同时从含硅半导体膜中除去催化剂元件。 该方法包括以下步骤：在玻璃基板上形成含硅的非晶半导体膜，通过使用催化剂元素使其结晶化; 选择性地向非晶半导体膜引入属于第15族的杂质，以形成吸收区域和被吸收的区域; 并通过热处理使硅膜中的催化剂元素移动到吸气区域。 通过吸气工艺，可以获得其中含有的镍的浓度充分降低的结晶硅膜。

公开(公告)号：US20050070038A1

公开(公告)日：2005-03-31

申请号：US10968953

申请日：2004-10-21

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Setsuo Nakajima ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Setsuo Nakajima ,  Yasuyuki Arai

IPC分类号： G02F1/13 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/1362 ,  H01L21/00

CPC分类号： G02F1/13452 ,  G02F1/1303 ,  G02F1/133305 ,  G02F1/1345 ,  G02F1/13454 ,  H01L21/67132 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01079

摘要： A method of fabricating a driver circuit for use with a passive matrix or active matrix electrooptical display device such as a liquid crystal display. The driver circuit occupies less space than heretofore. A circuit (stick crystal) having a length substantially equal to the length of one side of the matrix of the display device is used as the driver circuit. The circuit is bonded to one substrate of the display device, and then the terminals of the circuit are connected with the terminals of the display device. Subsequently, the substrate of the driver circuit is removed. This makes the configuration of the circuit much simpler than the configuration of the circuit heretofore required by the TAB method or COG method, because conducting lines are not laid in a complex manner. The driver circuit can be formed on a large-area substrate such as a glass substrate. The display device can be formed on a lightweight material having a high shock resistance such as a plastic substrate. Hence, a display device having excellent portability can be obtained.

摘要翻译： 一种制造用于无源矩阵或有源矩阵电光显示装置如液晶显示器的驱动电路的方法。 驱动电路占用的空间比以前少。 使用具有与显示装置的矩阵的一侧的长度大致相等的长度的电路（棒状晶体）作为驱动电路。 电路接合到显示装置的一个基板，然后电路的端子与显示装置的端子连接。 随后，驱动电路的基板被去除。 这使得电路的配置比TAB方法或COG方法所要求的电路的配置简单得多，因为导线不是以复杂的方式铺设。 驱动电路可以形成在诸如玻璃基板的大面积基板上。 显示装置可以形成在具有高抗冲击性的轻质材料上，例如塑料基板。 因此，可以获得具有优异便携性的显示装置。

公开(公告)号：US20050032339A1

公开(公告)日：2005-02-10

申请号：US10935307

申请日：2004-09-08

申请人： Setsuo Nakajima ,  Shunpei Yamazaki ,  Hisashi Ohtani ,  Satoshi Teramoto ,  Toshiji Hamatani

发明人： Setsuo Nakajima ,  Shunpei Yamazaki ,  Hisashi Ohtani ,  Satoshi Teramoto ,  Toshiji Hamatani

IPC分类号： G02F1/1362 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/20 ,  H01L21/00 ,  H01L21/36

CPC分类号： H01L29/78603 ,  G02F1/13454 ,  H01L27/12 ,  H01L27/1248 ,  Y10S438/928

摘要： There are provided a substrate of a semiconductor device and a fabrication method thereof which allow to suppress impurity from turning around from a glass or quartz substrate in fabrication steps of a TFT. An insulating film is deposited so as to surround the glass substrate by means of reduced pressure thermal CVD. It allows to suppress the impurity from infiltrating from the glass substrate to an active region of the TFT in the later process.

摘要翻译： 提供了一种半导体器件的衬底及其制造方法，其可以在TFT的制造步骤中抑制杂质从玻璃或石英衬底转向。 沉积绝缘膜，以便通过减压热CVD围绕玻璃基板。 这允许在稍后的工艺中抑制杂质从玻璃衬底渗透到TFT的有源区。

公开(公告)号：US20050012096A1

公开(公告)日：2005-01-20

申请号：US10917359

申请日：2004-08-13

申请人： Shunpei Yamazaki ,  Naoaki Yamaguchi ,  Setsuo Nakajima

发明人： Shunpei Yamazaki ,  Naoaki Yamaguchi ,  Setsuo Nakajima

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/04

CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L27/1277 ,  H01L27/14609 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765

摘要： Disclosed is a technique of improving the heat resistance of the aluminum gate electrode in bottom-gate-type TFT of which the active layer is made of a crystalline silicon film. A pattern of a laminate of a titanium film 102 and an aluminum film 103 is formed on a glass substrate 101. The pattern is to give a gate electrode 100. Then, the titanium film 102 is side-etched. Next, the layered substrate is heated to thereby intentionally form hillocks and whiskers-on the surface of the aluminum pattern 103. Next, the aluminum pattern 103 acting as an anode is subjected to anodic oxidation to form an oxide film 105 thereon. The anodic oxidation extends to the lower edge of the aluminum pattern 103, at which the titanium layer was side-etched. Next, a gate-insulating film 106 and an amorphous silicon film are formed. A mask is formed over the pattern, which is to give -the gate electrode, and then a nickel acetate solution is applied to the layered structure. Thus, nickel is kept in contact with the surface of the structure. Next, this is heated to induce crystal growth in the silicon film from the region contacted with nickel to the masked region. In the bottom-gate-type TFT thus produced, the active layer is made of a crystalline silicon film. In this process, since the anodic oxide film is formed as in FIG. 1(C), aluminum does neither melt to flow away nor diffuse away. Thus, the heat resistance of the aluminum electrode formed is improved.

摘要翻译： 公开了一种提高活性层由结晶硅膜制成的底栅型TFT中的铝栅电极的耐热性的技术。 在玻璃基板101上形成钛膜102和铝膜103的叠层图案。图案是给予栅电极100.然后，对钛膜102进行侧蚀刻。 接着，在铝图案103的表面上，层叠基板被加热，从而有意地形成小丘和晶须。接着，将作为阳极的铝图案103进行阳极氧化，在其上形成氧化膜105。 阳极氧化延伸到铝图案103的下边缘，钛层被侧蚀刻。 接下来，形成栅极绝缘膜106和非晶硅膜。 在图案上形成掩模，该掩模将产生栅电极，然后将乙酸镍溶液施加到层状结构。 因此，镍与结构的表面保持接触。 接下来，将其加热以在与镍接触的区域中的硅膜中引起晶体生长至掩蔽区域。 在如此制造的底栅型TFT中，有源层由结晶硅膜制成。 在该方法中，由于阳极氧化膜如图1所示那样形成。 如图1（C）所示，铝既不熔化，也不会流失。 因此，形成的铝电极的耐热性得到改善。

公开(公告)号：US06806495B1

公开(公告)日：2004-10-19

申请号：US09566730

申请日：2000-05-09

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Setsuo Nakajima

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Setsuo Nakajima

IPC分类号： H01L2904

CPC分类号： H01L27/1288 ,  G02F2001/136231 ,  H01L27/1214

摘要： A liquid crystal display device; in the prior art has been high in its manufactural cost for the reason that TFTs have been fabricated using, at least, five photo-masks.

摘要翻译： 液晶显示装置; 在现有技术中，由于至少使用了5个光掩膜来制造TFT，所以其制造成本很高。

公开(公告)号：US06803601B2

公开(公告)日：2004-10-12

申请号：US10140424

申请日：2002-05-06

申请人： Setsuo Nakajima

发明人： Setsuo Nakajima

IPC分类号： H01L2904

CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： An object of the present invention is to provide a TFT of new structure in which the gate electrode overlaps with the LDD region and a TFT of such structure in which the gate electrode does not overlap with the LDD region. The TFT is made from crystalline semiconductor film and is highly reliable. The TFT of crystalline semiconductor film has the gate electrode formed from a first gate electrode 113 and a second gate electrode in close contact with said first gate electrode and gate insulating film. The LDD is formed by ion doping using said first gate electrode as a mask, and the source-drain region is formed using said second gate electrode as a mask. After that the second gate electrode in the desired region is selectively removed. In this way it is possible to form LDD region which overlaps with the second gate electrode.

摘要翻译： 本发明的目的是提供一种其中栅电极与LDD区重叠的新结构的TFT和其中栅电极不与LDD区重叠的结构的TFT。 TFT由结晶半导体膜制成，高度可靠。晶体半导体膜的TFT具有由第一栅电极113和与所述第一栅电极和栅极绝缘膜紧密接触的第二栅极形成的栅电极。 通过使用所述第一栅电极作为掩模的离子掺杂形成LDD，并且使用所述第二栅电极作为掩模形成源极 - 漏极区。 之后，选择性地去除所需区域中的第二栅电极。 以这种方式，可以形成与第二栅电极重叠的LDD区域。

公开(公告)号：US06737717B2

公开(公告)日：2004-05-18

申请号：US10084428

申请日：2002-02-28

申请人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hideaki Kuwabara

IPC分类号： H01L2976

CPC分类号： H01L29/78627 ,  H01L27/1237 ,  H01L27/1296 ,  H01L29/66765 ,  H01L29/78624 ,  H01L29/78678 ,  H01L29/78684

摘要： There is provided a semiconductor device including a semiconductor circuit formed by semiconductor elements having an LDD structure which has high reproducibility, improves the stability of TFTs and provides high productivity and a method for manufacturing the same. In order to achieve the object, the design of a second mask is appropriately determined in accordance with requirements associated with the circuit configuration to make it possible to form a desired LDD region on both sides or one side of the channel formation region of a TFT.

摘要翻译： 提供一种半导体器件，其包括由具有高再现性的LDD结构的半导体元件形成的半导体电路，提高TFT的稳定性并提供高生产率及其制造方法。为了实现该目的， 根据与电路配置相关的要求适当地确定第二掩模，以便可以在TFT的沟道形成区域的两侧或一侧上形成期望的LDD区域。

公开(公告)号：US06600197B1

公开(公告)日：2003-07-29

申请号：US09438105

申请日：1999-11-10

申请人： Setsuo Nakajima ,  Takeshi Fukunaga

发明人： Setsuo Nakajima ,  Takeshi Fukunaga

IPC分类号： H01L2701

CPC分类号： H01L27/1222 ,  H01L21/266 ,  H01L23/36 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： In forming a pair of impurity regions in an active layer, an intrinsic or substantially intrinsic region having a double-sided comb shape is also formed by using a proper mask. The intrinsic or substantially intrinsic region is composed of a portion that effectively functions as a channel forming region and portions in which a channel is not formed and which function as heat sinks. The heat dissipation effect is improved because the heat sinks are formed by the same material as the channel forming region.

摘要翻译： 在有源层中形成一对杂质区域时，通过使用适当的掩模也形成具有双面梳状形状的固有或基本上本征区域。 固有或基本上本征区域由有效地用作沟道形成区域的部分和其中不形成沟道并且用作散热器的部分组成。 散热效果得到改善，因为散热器由与沟道形成区域相同的材料形成。