摘要:
An apparatus for generating extreme ultraviolet light used with a laser apparatus and connected to an external device so as to supply the extreme ultraviolet light thereto includes a chamber provided with at least one inlet through which a laser beam is introduced into the chamber; a target supply unit provided on the chamber configured to supply a target material to a predetermined region inside the chamber; a discharge pump connected to the chamber; at least one optical element provided inside the chamber; an etching gas introduction unit provided on the chamber through which an etching gas passes; and at least one temperature control mechanism for controlling a temperature of the at least one optical element.
摘要:
An extreme ultraviolet light generation apparatus used in combination with a laser system, the apparatus may include: a chamber provided with at least one inlet port for introducing a laser beam outputted from the laser system into the chamber; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber, where the target material is irradiated with the laser beam; at least one optical element disposed inside the chamber; a magnetic field generation unit for generating a magnetic field around the predetermined region; an ion collection unit disposed in a direction of a line of magnetic force of the magnetic field for collection an ion which is generated when the target material is irradiated with the laser beam and is flowing along the line of magnetic force; and a gas introduction unit for introducing an etching gas into the chamber.
摘要:
A vacuum ultraviolet laser wavelength measuring apparatus capable of accurately measuring wavelength characteristics of a laser beam. The wavelength measuring apparatus has spectral devices for generating an optical pattern corresponding to wavelength characteristics of an incident laser beam and measuring wavelength characteristics of a laser beam in a vacuum ultraviolet region oscillating from a vacuum ultraviolet laser on the basis of the optical pattern. The apparatus has a fluorescent screen for generating a fluorescent pattern having an intensity distribution corresponding to an intensity distribution of the incident optical pattern, a pattern detector for measuring the intensity distribution of the fluorescent pattern, and arithmetic unit for calculating the wavelength characteristics of the laser beam on the basis of the measured intensity distribution.
摘要:
The present invention can accurately detect a wavelength of a light to be detected, which is output from a source of light to be detected, without an error even if there is a change in the characteristic of a spectroscope due to an individual difference among the spectroscopes or a change in the measuring environment. The device according to the invention emits at least two reference lights (Ln, La) having different wavelengths (&lgr;n, &lgr;a) as the reference lights by reference light source. And, actual characteristic value (D) of spectroscope is calculated on the basis of detection positions (Sn, Sa) of the at least two reference lights (Ln, La) on a sensor and the known wavelengths (&lgr;n, &lgr;a) of the at least two reference lights (Ln, La) (D=(&lgr;a−&lgr;n)/(Sa−Sn)). And, on the basis of the detection positions (Sn, SO) of the reference light (Ln) and the light to be detected (LO) on the sensor (10), the calculated actual characteristic value (D) of the spectroscope and the known wavelength (&lgr;n) of the reference light (Ln), wavelength (&lgr;O) of the light to be detected (LO) is calculated (&lgr;O=&lgr;n+(SO−Sn)·D).
摘要:
An extreme ultraviolet light generation system is an extreme ultraviolet light generation system which is used with a laser apparatus and is connected to an external device so as to supply extreme ultraviolet light thereto, and the extreme ultraviolet light generation system may include: a chamber provided with at least one inlet through which a laser beam is introduced thereinto; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber; a discharge pump connected to the chamber; at least one optical element disposed inside the chamber; an etching gas introduction unit provided to the chamber through which etching gas passes, the etching gas being introduced to etch debris of the target material which is emitted when the target material is irradiated with the laser beam inside the chamber and adheres to the at least one optical element; and at least one temperature control mechanism for controlling a temperature of the at least one optical element.
摘要:
An extreme ultraviolet light generation apparatus used in combination with a laser system, the apparatus may include: a chamber provided with at least one inlet port for introducing a laser beam outputted from the laser system into the chamber; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber, where the target material is irradiated with the laser beam; at least one optical element disposed inside the chamber; a magnetic field generation unit for generating a magnetic field around the predetermined region; an ion collection unit disposed in a direction of a line of magnetic force of the magnetic field for collection an ion which is generated when the target material is irradiated with the laser beam and is flowing along the line of magnetic force; and a gas introduction unit for introducing an etching gas into the chamber.
摘要:
An extreme ultraviolet light generation system is an extreme ultraviolet light generation system which is used with a laser apparatus and is connected to an external device so as to supply extreme ultraviolet light thereto, and the extreme ultraviolet light generation system may include: a chamber provided with at least one inlet through which a laser beam is introduced thereinto; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber; a discharge pump connected to the chamber; at least one optical element disposed inside the chamber; an etching gas introduction unit provided to the chamber through which etching gas passes, the etching gas being introduced to etch debris of the target material which is emitted when the target material is irradiated with the laser beam inside the chamber and adheres to the at least one optical element; and at least one temperature control mechanism for controlling a temperature of the at least one optical element.
摘要:
A chamber apparatus used with a laser apparatus may include: a chamber provided with at least one inlet through which a laser beam outputted from the laser apparatus enters the chamber; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber; a magnetic field generation unit for generating a magnetic field in the predetermined region; and a charged particle collection unit disposed in a direction of a magnetic flux of the magnetic field for collecting a charged particle thereinto, the charged particle being generated when the target material is irradiated with the laser beam inside the chamber and traveling along the magnetic flux.
摘要:
Of spontaneous emission beams emitted from a laser medium but not line-narrowed, a spontaneous emission beam whose wavelength approximates a narrowed emission beam and whose light intensity is equal to or higher than a certain level is used as a reference light.
摘要:
An apparatus for generating extreme ultraviolet light used with a laser apparatus and connected to an external device so as to supply the extreme ultraviolet light thereto includes a chamber provided with at least one inlet through which a laser beam is introduced into the chamber; a target supply unit provided on the chamber configured to supply a target material to a predetermined region inside the chamber; a discharge pump connected to the chamber; at least one optical element provided inside the chamber; an etching gas introduction unit provided on the chamber through which an etching gas passes; and at least one temperature control mechanism for controlling a temperature of the at least one optical element.