摘要:
Under a reduced pressure, an RF electric field is applied at a right angle to a main face of an article-to-be-treated such as a semiconductor, wafer placed on a cathode in treatment chamber. At the same time, a magnetic field is applied thereto by a magnetic field applying device to generate a plasma by a magnetron discharge. The magnetic field is formed in such a fashion that adjacent magnetic lines of flux are not in parallel with one another on the main face of the article-to-be-treated. Charged particles in the plasma drift in a diverging direction with Lorenz force so as to prevent electrification of the article-to-be-treated.
摘要:
A silver halide photographic material comprising a pyrazolotriazole coupler represented by the following Formula I and a stabilizer represented by the following Formula VIII. ##STR1## The substituents are as defined in the specification.
摘要:
A silver halide light-sensitive photographic material comprising a support and, provided thereon, at least one silver halide emulsion layer containing a dye-forming coupler of Formula [I]: ##STR1## wherein R.sub.1 is an alkyl group or a cycloalkyl group; R.sub.2 is an alkyl group, a cycloalkyl group, an acyl group or an aryl group; R.sub.3 is a group which is substituted to a benzene ring; n is an integer of zero or 1; R.sub.4 is an organic group containing one linkage group containing a carbonyl unit or a sulfonyl unit; J is a ##STR2## wherein R.sub.5 is a hydrogen atom, an alkyl group, an aryl group or a heterocyclic group; and X.sub.1 is a group capable of being split off upon reaction with the oxidation product of a color developing agent.
摘要:
The objective of the present invention is to provide a process for production of (meth)acrylic acid with improved production efficiency by efficiently shifting from heating procedure to cooling procedure for a crystallizer. A process for production of (meth)acrylic acid according to the present invention is characterized in comprising the steps of crystallizing (meth)acrylic acid from a crude (meth)acrylic acid solution by using a batch type crystallizer, and melting the obtained (meth)acrylic acid crystal to obtain a (meth)acrylic acid melted liquid; wherein preliminary cooling of the crystallizer for the next crystallization step is started during transferring the (meth)acrylic acid melted liquid from the crystallizer.
摘要:
A process for producing (meth)acrylic acid, comprising the step of repeating a crystallization operation “n” times (providing “n” is an integer 2 or more) to produce purified (meth)acrylic acid from crude (meth)acrylic acid, wherein a (meth)acrylic acid solution is crystallized and the crystallized (meth)acrylic acid is melted to obtain a (meth)acrylic acid melt in the crystallization operation; wherein a constant amount Ak of the (meth)acrylic acid solution is subjected to the kth crystallization operation (providing “k” is an integer 1 to n−1), and the (meth)acrylic acid melt obtained by the kth crystallization operation is utilized as the (meth)acrylic acid solution for the k+1th crystallization operation without being discharged from a crystallizer or is transferred from the crystallizer to a k+1th storage tank for storing the (meth)acrylic acid solution to be used in the k+1th crystallization operation depending on the stored amount of the k+1th storage tank.
摘要:
Write pointer generation units successively switch and indicate storage locations of data transmitted from a transmitter end LSI from plural buffers constituting FIFO circuits. A clock-step ring buffer delays a gated step signal to instruct an operation stop. When receiving the gated stop signal delayed by the clock-step ring buffer, the write pointer generation units stop switching instructions of the storage locations.
摘要:
A plurality of system board modules are connected to a crossbar module. An error detection unit detects an error in a packet received from a corresponding system board module. When an error is detected by the error detection unit, a transmission control unit issues a completion data generation request. When receiving the completion data generation request, a packet completion unit generates completion data. When receiving an error packet, a selector circuit outputs a completion packet in which completion data is provided in place of a data unit involving error.
摘要:
PROBLEMThere is provided a melting method of (meth)acrylic acid crystal which is capable of providing a higher quality of (meth)acrylic acid without carrying out an additional purification treatment to (meth)acrylic acid obtained by a crystallization operation accompanied by melting of (meth)acrylic acid. In addition, there is provided a simple method for adjusting a content of polymerization inhibitor in a product (meth)acrylic acid.SOLUTIONIn the crystallization method melting (meth)acrylic acid crystal while wetting with the crystalline molten liquid, a polymerization inhibitor is added to a molten liquid melted after initiation of melting, and all of crystal is melted while circulating and feeding the molten liquid containing said polymerization inhibitor to the crystal. In addition, a content of polymerization inhibitor in product (meth)acrylic acid is adjusted by adding a predetermined amount of polymerization inhibitor corresponding to a product specification to the molten liquid melted after initiation of melting.
摘要:
Write pointer generation units successively switch and indicate storage locations of data transmitted from a transmitter end LSI from plural buffers constituting FIFO circuits. A clock-step ring buffer delays a gated step signal to instruct an operation stop. When receiving the gated stop signal delayed by the clock-step ring buffer, the write pointer generation units stop switching instructions of the storage locations.
摘要:
A semiconductor light emitting device comprises: a substrate; a semiconductor stack formed on one of surfaces of the substrate, the semiconductor stack including an active layer composed of a group III nitride semiconductor having a substantially nonpolar or substantially semipolar plane as a main surface; a first electrode formed in a part of a first electrode surface which is the other surface of the substrate; and a second electrode formed on a second electrode surface opposite to the first electrode surface across the substrate and semiconductor stack.