公开(公告)号：US20050161742A1

公开(公告)日：2005-07-28

申请号：US11087652

申请日：2005-03-24

申请人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

发明人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L27/01 ,  H01L31/0392

CPC分类号： H01L21/02683 ,  H01L21/2022 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696

摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.

公开(公告)号：US20050098784A1

公开(公告)日：2005-05-12

申请号：US11013539

申请日：2004-12-17

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/00 ,  H01L29/76

CPC分类号： H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

摘要翻译： 提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流 。 在绝缘膜上形成矩形或条纹图案凹陷和突出部分。 绝缘膜上形成半导体膜。 通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。 尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

公开(公告)号：US07560397B2

公开(公告)日：2009-07-14

申请号：US11709200

申请日：2007-02-22

申请人： Shunpei Yamazaki ,  Hiroshi Shibata ,  Koichiro Tanaka ,  Masaaki Hiroki ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hiroshi Shibata ,  Koichiro Tanaka ,  Masaaki Hiroki ,  Mai Akiba

IPC分类号： H01L21/26

CPC分类号： H01L21/02691 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  Y10S438/942

摘要： A method of manufacturing a semiconductor device is provided which uses a laser crystallization method capable of increasing substrate processing efficiency. An island-like semiconductor film including one or more islands is formed by patterning (sub-island). The sub-island is then irradiated with laser light to improve its crystallinity, and thereafter patterned to form an island. From pattern information of a sub-island, a laser light scanning path on a substrate is determined such that at least the sub-island is irradiated with laser light. In other words, the present invention runs laser light so as to obtain at least the minimum degree of crystallization of a portion that has to be crystallized, instead of irradiating the entire substrate with laser light.

摘要翻译： 提供一种制造半导体器件的方法，其使用能够提高衬底处理效率的激光结晶方法。 通过图案化（子岛）形成包括一个或多个岛的岛状半导体膜。 然后用激光照射子岛以改善其结晶度，然后图案化以形成岛。 从子岛的图案信息，确定基板上的激光扫描路径，使得至少使该子岛被激光照射。 换句话说，本发明运行激光，以便至少获得必须结晶的部分的最小结晶度，而不是用激光照射整个基板。

公开(公告)号：US20070190810A1

公开(公告)日：2007-08-16

申请号：US11709200

申请日：2007-02-22

申请人： Shunpei Yamazaki ,  Hiroshi Shibata ,  Koichiro Tanaka ,  Masaaki Hiroki ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hiroshi Shibata ,  Koichiro Tanaka ,  Masaaki Hiroki ,  Mai Akiba

IPC分类号： H01L21/00

CPC分类号： H01L21/02691 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  Y10S438/942

摘要： A method of manufacturing a semiconductor device is provided which uses a laser crystallization method capable of increasing substrate processing efficiency. An island-like semiconductor film including one or more islands is formed by patterning (sub-island). The sub-island is then irradiated with laser light to improve its crystallinity, and thereafter patterned to form an island. From pattern information of a sub-island, a laser light scanning path on a substrate is determined such that at least the sub-island is irradiated with laser light. In other words, the present invention runs laser light so as to obtain at least the minimum degree of crystallization of a portion that has to be crystallized, instead of irradiating the entire substrate with laser light.

摘要翻译： 提供一种制造半导体器件的方法，其使用能够提高衬底处理效率的激光结晶方法。 通过图案化（子岛）形成包括一个或多个岛的岛状半导体膜。 然后用激光照射子岛以改善其结晶度，然后图案化以形成岛。 从子岛的图案信息，确定基板上的激光扫描路径，使得至少使该子岛被激光照射。 换句话说，本发明运行激光，以便至少获得必须结晶的部分的最小结晶度，而不是用激光照射整个基板。

公开(公告)号：US07214573B2

公开(公告)日：2007-05-08

申请号：US10314452

申请日：2002-12-09

申请人： Shunpei Yamazaki ,  Hiroshi Shibata ,  Koichiro Tanaka ,  Masaaki Hiroki ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hiroshi Shibata ,  Koichiro Tanaka ,  Masaaki Hiroki ,  Mai Akiba

IPC分类号： H01L21/00

CPC分类号： H01L21/02691 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  Y10S438/942

摘要： A method of manufacturing a semiconductor device is provided which uses a laser crystallization method capable of increasing substrate processing efficiency. An island-like semiconductor film including one or more islands is formed by patterning (sub-island). The sub-island is then irradiated with laser light to improve its crystallinity, and thereafter patterned to form an island. From pattern information of a sub-island, a laser light scanning path on a substrate is determined such that at least the sub-island is irradiated with laser light. In other words, the present invention runs laser light so as to obtain at least the minimum degree of crystallization of a portion that has to be crystallized, instead of irradiating the entire substrate with laser light.

摘要翻译： 提供一种制造半导体器件的方法，其使用能够提高衬底处理效率的激光结晶方法。 通过图案化（子岛）形成包括一个或多个岛的岛状半导体膜。 然后用激光照射子岛以改善其结晶度，然后图案化以形成岛。 从子岛的图案信息，确定基板上的激光扫描路径，使得至少使该子岛被激光照射。 换句话说，本发明运行激光，以便至少获得必须结晶的部分的最小结晶度，而不是用激光照射整个基板。

公开(公告)号：US20070148925A1

公开(公告)日：2007-06-28

申请号：US11707094

申请日：2007-02-16

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

IPC分类号： H01L21/84 ,  H01L21/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  Y10S438/904

摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.

摘要翻译： 为了提供一种激光装置和激光退火方法，通过该方法获得具有较大晶粒尺寸的结晶半导体膜并且其运行成本低。 使用易于维护的固态激光器和耐久性高的激光器，并且从其发射的激光线性化，从而提高了生产量并降低了整体的生产成本。 此外，用这样的激光照射非晶半导体膜的正面和背面，得到晶粒尺寸较大的结晶半导体膜。

公开(公告)号：US06730550B1

公开(公告)日：2004-05-04

申请号：US09635422

申请日：2000-08-10

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

IPC分类号： H01L2100

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  Y10S438/904

摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.

公开(公告)号：US06753212B2

公开(公告)日：2004-06-22

申请号：US09932935

申请日：2001-08-21

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

IPC分类号： H01L2184

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  Y10S438/904

摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.

摘要翻译： 为了提供一种激光装置和激光退火方法，通过该方法获得具有较大晶粒尺寸的结晶半导体膜并且其运行成本低。 使用易于维护的固态激光器和耐久性高的激光器，并且从其发射的激光线性化，从而提高了生产量并降低了整体的生产成本。 此外，用这样的激光照射非晶半导体膜的正面和背面，得到晶粒尺寸较大的结晶半导体膜。

公开(公告)号：US07473622B2

公开(公告)日：2009-01-06

申请号：US11707094

申请日：2007-02-16

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

IPC分类号： H01L21/20

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  Y10S438/904

摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.

摘要翻译： 为了提供一种激光装置和激光退火方法，通过该方法获得具有较大晶粒尺寸的结晶半导体膜并且其运行成本低。 使用易于维护的固态激光器和耐久性高的激光器，并且从其发射的激光线性化，从而提高了生产量并降低了整体的生产成本。 此外，用这样的激光照射非晶半导体膜的正面和背面，得到晶粒尺寸较大的结晶半导体膜。

公开(公告)号：US07179698B2

公开(公告)日：2007-02-20

申请号：US10871380

申请日：2004-06-21

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

IPC分类号： H01L21/00

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  Y10S438/904

摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.

摘要翻译： 为了提供一种激光装置和激光退火方法，通过该方法获得具有较大晶粒尺寸的结晶半导体膜并且其运行成本低。 使用易于维护的固态激光器和耐久性高的激光器，并且从其发射的激光线性化，从而提高了生产量并降低了整体的生产成本。 此外，用这样的激光照射非晶半导体膜的正面和背面，得到晶体尺寸较大的结晶半导体膜。