公开(公告)号：US07560397B2

公开(公告)日：2009-07-14

申请号：US11709200

申请日：2007-02-22

申请人： Shunpei Yamazaki ,  Hiroshi Shibata ,  Koichiro Tanaka ,  Masaaki Hiroki ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hiroshi Shibata ,  Koichiro Tanaka ,  Masaaki Hiroki ,  Mai Akiba

IPC分类号： H01L21/26

CPC分类号： H01L21/02691 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  Y10S438/942

摘要： A method of manufacturing a semiconductor device is provided which uses a laser crystallization method capable of increasing substrate processing efficiency. An island-like semiconductor film including one or more islands is formed by patterning (sub-island). The sub-island is then irradiated with laser light to improve its crystallinity, and thereafter patterned to form an island. From pattern information of a sub-island, a laser light scanning path on a substrate is determined such that at least the sub-island is irradiated with laser light. In other words, the present invention runs laser light so as to obtain at least the minimum degree of crystallization of a portion that has to be crystallized, instead of irradiating the entire substrate with laser light.

摘要翻译： 提供一种制造半导体器件的方法，其使用能够提高衬底处理效率的激光结晶方法。 通过图案化（子岛）形成包括一个或多个岛的岛状半导体膜。 然后用激光照射子岛以改善其结晶度，然后图案化以形成岛。 从子岛的图案信息，确定基板上的激光扫描路径，使得至少使该子岛被激光照射。 换句话说，本发明运行激光，以便至少获得必须结晶的部分的最小结晶度，而不是用激光照射整个基板。

公开(公告)号：US07214573B2

公开(公告)日：2007-05-08

申请号：US10314452

申请日：2002-12-09

申请人： Shunpei Yamazaki ,  Hiroshi Shibata ,  Koichiro Tanaka ,  Masaaki Hiroki ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hiroshi Shibata ,  Koichiro Tanaka ,  Masaaki Hiroki ,  Mai Akiba

IPC分类号： H01L21/00

CPC分类号： H01L21/02691 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  Y10S438/942

摘要： A method of manufacturing a semiconductor device is provided which uses a laser crystallization method capable of increasing substrate processing efficiency. An island-like semiconductor film including one or more islands is formed by patterning (sub-island). The sub-island is then irradiated with laser light to improve its crystallinity, and thereafter patterned to form an island. From pattern information of a sub-island, a laser light scanning path on a substrate is determined such that at least the sub-island is irradiated with laser light. In other words, the present invention runs laser light so as to obtain at least the minimum degree of crystallization of a portion that has to be crystallized, instead of irradiating the entire substrate with laser light.

摘要翻译： 提供一种制造半导体器件的方法，其使用能够提高衬底处理效率的激光结晶方法。 通过图案化（子岛）形成包括一个或多个岛的岛状半导体膜。 然后用激光照射子岛以改善其结晶度，然后图案化以形成岛。 从子岛的图案信息，确定基板上的激光扫描路径，使得至少使该子岛被激光照射。 换句话说，本发明运行激光，以便至少获得必须结晶的部分的最小结晶度，而不是用激光照射整个基板。

公开(公告)号：US20070190810A1

公开(公告)日：2007-08-16

申请号：US11709200

申请日：2007-02-22

申请人： Shunpei Yamazaki ,  Hiroshi Shibata ,  Koichiro Tanaka ,  Masaaki Hiroki ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hiroshi Shibata ,  Koichiro Tanaka ,  Masaaki Hiroki ,  Mai Akiba

IPC分类号： H01L21/00

CPC分类号： H01L21/02691 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  Y10S438/942

摘要： A method of manufacturing a semiconductor device is provided which uses a laser crystallization method capable of increasing substrate processing efficiency. An island-like semiconductor film including one or more islands is formed by patterning (sub-island). The sub-island is then irradiated with laser light to improve its crystallinity, and thereafter patterned to form an island. From pattern information of a sub-island, a laser light scanning path on a substrate is determined such that at least the sub-island is irradiated with laser light. In other words, the present invention runs laser light so as to obtain at least the minimum degree of crystallization of a portion that has to be crystallized, instead of irradiating the entire substrate with laser light.

摘要翻译： 提供一种制造半导体器件的方法，其使用能够提高衬底处理效率的激光结晶方法。 通过图案化（子岛）形成包括一个或多个岛的岛状半导体膜。 然后用激光照射子岛以改善其结晶度，然后图案化以形成岛。 从子岛的图案信息，确定基板上的激光扫描路径，使得至少使该子岛被激光照射。 换句话说，本发明运行激光，以便至少获得必须结晶的部分的最小结晶度，而不是用激光照射整个基板。

公开(公告)号：US20070000428A1

公开(公告)日：2007-01-04

申请号：US11514969

申请日：2006-09-05

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Satoshi Murakami ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Satoshi Murakami ,  Mai Akiba

IPC分类号： C30B15/14

CPC分类号： H01L27/1285 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/066 ,  B23K26/0738 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/76894 ,  H01L27/1296 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/5284 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.

摘要翻译： 根据掩模掌握半导体膜上的应该留在基板上的每个区域。 然后，确定要用激光扫描的每个区域，使得至少要通过图案化获得的区域结晶，并且使光点撞击要扫描的区域，从而部分地使半导体膜结晶。 光束点的低输出能量的每个部分被狭缝屏蔽。 在本发明中，激光不被扫描并照射到半导体膜的整个表面上，而被扫描，使得至少每个不可缺少的部分被最终结晶化。 利用上述结构，可以在半导体膜结晶之后通过图案化节省将激光照射到要去除的每个部分上所需的时间。

公开(公告)号：US07050878B2

公开(公告)日：2006-05-23

申请号：US10300927

申请日：2002-11-21

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

IPC分类号： G06F19/00

CPC分类号： H01L21/02678 ,  B23K26/04 ,  B23K26/0604 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/12 ,  B23K26/1224 ,  B23K26/123 ,  B23K26/127 ,  H01L21/02683 ,  H01L21/2026

摘要： Providing a semiconductor fabricating apparatus using a laser crystallization technique for enhancing the processing efficiency for substrate and for increasing the mobility of a semiconductor film. The semiconductor fabricating apparatus of multi-chamber system includes a film formation equipment for forming a semiconductor film, and a laser irradiation equipment. The laser irradiation equipment includes first means for controlling a laser irradiation position relative to an irradiation object, second means (laser oscillator) for emitting laser light, third means (optical system) for processing or converging the laser light, and fourth means for controlling the oscillation of the second means and for controlling the first means in a manner that a beam spot of the laser light processed by the third means may cover a place determined based on data on a mask configuration (pattern information).

摘要翻译： 提供一种使用激光结晶技术的半导体制造装置，用于提高衬底的处理效率和增加半导体膜的迁移率。 多室系统的半导体制造装置包括用于形成半导体膜的成膜设备和激光照射设备。 激光照射设备包括用于控制相对于照射物体的激光照射位置的第一装置，用于发射激光的第二装置（激光振荡器），用于处理或会聚激光的第三装置（光学系统），以及用于控制 第二装置的振荡和第一装置的控制，使得由第三装置处理的激光束的光斑可以覆盖基于掩模配置（图案信息）上的数据确定的位置。

公开(公告)号：US20050277028A1

公开(公告)日：2005-12-15

申请号：US11185737

申请日：2005-07-21

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

IPC分类号： H01L21/20 ,  B23K26/06 ,  B23K26/08 ,  G02F1/1368 ,  G03F1/00 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01S3/00 ,  H01S5/06

CPC分类号： H01L21/02683 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/082 ,  B23K2101/007 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

摘要： Provided are a laser apparatus of continuous oscillation that is capable of enhancing the efficiency of substrate processing, a laser irradiation method, and a manufacturing method for a semiconductor device using the laser apparatus. A portion of a semiconductor film that should be left on a substrate after patterning is grasped in accordance with a mask. Then, a portion to be scanned with a laser light is determined so that it is possible to crystallize at least the portion to be obtained through the patterning. Also, a beam spot is made to strike the portion to be scanned. As a result, the semiconductor film is partially crystallized. That is, with the present invention, the laser light is not scanned and irradiated onto the entire surface of a semiconductor film but is scanned so that at least an indispensable portion is crystallized. With the construction described above, it becomes possible to save a time taken to irradiate the laser light onto a portion that will be removed through the patterning after the crystallization of the semiconductor film.

摘要翻译： 提供能够提高基板处理效率的连续振荡的激光装置，激光照射方法以及使用该激光装置的半导体装置的制造方法。 根据掩模掌握在图案化之后留在基板上的半导体膜的一部分。 然后，确定要用激光扫描的部分，使得可以通过图案化至少使待获得的部分结晶。 此外，使光束点撞击要扫描的部分。 结果，半导体膜部分结晶。 也就是说，利用本发明，激光不被扫描并照射到半导体膜的整个表面上，而是被扫描，使得至少不可缺少的部分被结晶。 利用上述结构，可以将半导体膜结晶后的激光照射到通过图案化去除的部分上所花费的时间。

公开(公告)号：US08696808B2

公开(公告)日：2014-04-15

申请号：US11514969

申请日：2006-09-05

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Satoshi Murakami ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Satoshi Murakami ,  Mai Akiba

IPC分类号： C30B1/04

CPC分类号： H01L27/1285 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/066 ,  B23K26/0738 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/76894 ,  H01L27/1296 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/5284 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.

摘要翻译： 根据掩模掌握半导体膜上的应该留在基板上的每个区域。 然后，确定要用激光扫描的每个区域，使得至少要通过图案化获得的区域结晶，并且使光点撞击要扫描的区域，从而部分地使半导体膜结晶。 光束点的低输出能量的每个部分被狭缝屏蔽。 在本发明中，激光不被扫描并照射到半导体膜的整个表面上，而被扫描，使得至少每个不可缺少的部分被最终结晶化。 利用上述结构，可以在半导体膜结晶之后通过图案化节省将激光照射到要去除的每个部分上所需的时间。

公开(公告)号：US07279372B2

公开(公告)日：2007-10-09

申请号：US10882343

申请日：2004-07-02

申请人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba ,  Kenji Kasahara

发明人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba ,  Kenji Kasahara

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L23/544 ,  H01L27/1285 ,  H01L29/42384 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Island-like semiconductor films and markers are formed prior to laser irradiation. Markers are used as positional references so as not to perform laser irradiation all over the semiconductor within a substrate surface, but to perform a minimum crystallization on at least indispensable portion. Since the time required for laser crystallization can be reduced, it is possible to increase the substrate processing speed. By applying the above-described constitution to a conventional SLS method, a means for solving such problem in the conventional SLS method that the substrate processing efficiency is insufficient, is provided.

摘要翻译： 在激光照射之前形成岛状半导体膜和标记。 标记用作位置参考，以便不在衬底表面内的整个半导体上执行激光照射，而是在至少不可缺少的部分上进行最小结晶。 由于可以减少激光结晶所需的时间，可以提高基板处理速度。 通过将上述结构应用于传统的SLS方法，提供了一种用于在传统SLS方法中解决这种问题的方法，即基板处理效率不足。

公开(公告)号：US07105048B2

公开(公告)日：2006-09-12

申请号：US10305367

申请日：2002-11-27

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Satoshi Murakami ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Satoshi Murakami ,  Mai Akiba

IPC分类号： C30B1/02

CPC分类号： H01L27/1285 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/066 ,  B23K26/0738 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/76894 ,  H01L27/1296 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/5284 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.

公开(公告)号：US06962860B2

公开(公告)日：2005-11-08

申请号：US10289219

申请日：2002-11-07

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Akihisa Shimomura ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Akihisa Shimomura ,  Mai Akiba

IPC分类号： G02F1/1368 ,  B23K26/073 ,  H01L21/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

CPC分类号： H01L21/02691 ,  B23K26/0732 ,  B23K26/0736 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/67282 ,  H01L21/67294 ,  H01L27/1285

摘要： To provide a continuous-oscillating laser apparatus capable of improving the efficiency of substrate treatment, a method of irradiating a laser beam, and a method of manufacturing a semiconductor device using the laser apparatus. Of the entire semiconductor film, a portion that needs to be left on the substrate after patterning is identified according to a mask. Then, a portion to be scanned by respective lasers are defined, so that a laser beam is irradiated twice in different scanning directions to a portion to be obtained at least through patterning and beam spots are impinged upon the scanned portion, thereby partially crystallizing the semiconductor film. In other words, in the invention, it is arranged in such a manner that a laser beam is not irradiated by scanning a laser beam across the entire semiconductor film but by scanning a laser beam twice at least to the absolutely necessary portion. According to the above arrangement, it is possible to save the time to irradiate a laser beam in waste to the semiconductor film at a portion to be removed through patterning, and the crystalline characteristics of the semiconductor film obtained after the patterning can be further enhanced.

摘要翻译： 为了提供能够提高基板处理效率的连续振荡激光装置，照射激光的方法以及使用该激光装置制造半导体装置的方法。 在整个半导体膜中，根据掩模来识别在图案化之后需要留在基板上的部分。 然后，定义要由相应激光器扫描的部分，使得激光束在不同的扫描方向上被照射到要获得的部分两次，至少通过图案化并且光束点被照射在扫描部分上，从而部分地使半导体 电影。 换句话说，在本发明中，其布置成使得激光束不通过扫描整个半导体膜上的激光束而被照射，而是通过至少对绝对必需部分进行两次扫描激光束而被照射。 根据上述结构，通过图案化，可以节省在要除去的部分向半导体膜照射浪费的激光的时间，并且可以进一步提高在图案化之后获得的半导体膜的结晶特性。