公开(公告)号：US07816685B2

公开(公告)日：2010-10-19

申请号：US12342446

申请日：2008-12-23

申请人： Daiki Yamada ,  Yoshitaka Dozen ,  Eiji Sugiyama ,  Hidekazu Takahashi

发明人： Daiki Yamada ,  Yoshitaka Dozen ,  Eiji Sugiyama ,  Hidekazu Takahashi

IPC分类号： H01L29/04

CPC分类号： H01L27/1266 ,  H01L27/124 ,  H01L27/1292 ,  H01L27/1296 ,  H01L29/78621 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81001 ,  H01L2924/00

摘要： An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.

摘要翻译： 本发明的目的是提供薄膜电路部分的结构和薄膜电路部分的制造方法，通过该薄膜电路部分可以容易地在薄膜电路下形成用于连接到外部的电极。 包括第一绝缘膜，在第一绝缘膜的一个表面上形成的薄膜电路，形成在薄膜电路上的第二绝缘膜，形成在第二绝缘膜上的电极和形成在第二绝缘膜上的树脂膜的层叠体 电极。 导电膜与层叠体的第一绝缘膜的另一表面相邻地形成为与电极重叠。 用激光照射导电膜。

公开(公告)号：US20070296037A1

公开(公告)日：2007-12-27

申请号：US11812813

申请日：2007-06-21

申请人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

发明人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： H01L23/293 ,  H01L23/49855 ,  H01L23/66 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.

摘要翻译： 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。 在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。 此外，在制造过程中使用覆盖元件形成层侧的基板是其表面上具有支撑体的基板。

公开(公告)号：US08362485B2

公开(公告)日：2013-01-29

申请号：US13308582

申请日：2011-12-01

申请人： Daiki Yamada ,  Yoshitaka Dozen ,  Eiji Sugiyama ,  Hidekazu Takahashi

发明人： Daiki Yamada ,  Yoshitaka Dozen ,  Eiji Sugiyama ,  Hidekazu Takahashi

IPC分类号： H01L29/04

CPC分类号： H01L27/1266 ,  H01L27/124 ,  H01L27/1292 ,  H01L27/1296 ,  H01L29/78621 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81001 ,  H01L2924/00

摘要： An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.

公开(公告)号：US07879654B2

公开(公告)日：2011-02-01

申请号：US12694505

申请日：2010-01-27

申请人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Kaori Ogita ,  Naoto Kusumoto

发明人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Kaori Ogita ,  Naoto Kusumoto

IPC分类号： H01L23/48

CPC分类号： D21H21/48 ,  B32B29/00 ,  D21H27/32 ,  G06K19/07749 ,  H01L23/49855 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1266 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

摘要： Paper embedded with a semiconductor device capable of communicating wirelessly is realized, whose unevenness of a portion including the semiconductor device does not stand out and the paper is thin with a thickness of less than or equal to 130 μm. A semiconductor device is provided with a circuit portion and an antenna, and the circuit portion includes a thin film transistor. The circuit portion and the antenna are separated from a substrate used during manufacturing, and are interposed between a flexible base and a sealing layer and protected. The semiconductor device can be bent, and the thickness of the semiconductor device itself is less than or equal to 30 μm. The semiconductor device is embedded in a paper in a papermaking process.

摘要翻译： 实现了能够无线地进行通信的半导体装置的纸，其中包含半导体装置的部分的不均匀性不突出，并且纸薄而厚度小于或等于130μm。 半导体器件设置有电路部分和天线，并且电路部分包括薄膜晶体管。 电路部分和天线与在制造期间使用的基板分离，并且被插入在柔性基底和密封层之间并被保护。 半导体器件可以弯曲，并且半导体器件本身的厚度小于或等于30μm。 半导体器件以造纸工艺嵌入纸中。

公开(公告)号：US07772675B2

公开(公告)日：2010-08-10

申请号：US11812813

申请日：2007-06-21

申请人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

发明人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

IPC分类号： H01L29/06

摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.

公开(公告)号：US07667310B2

公开(公告)日：2010-02-23

申请号：US11819157

申请日：2007-06-25

申请人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Kaori Ogita ,  Naoto Kusumoto

发明人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Kaori Ogita ,  Naoto Kusumoto

IPC分类号： H01L23/06

CPC分类号： D21H21/48 ,  B32B29/00 ,  D21H27/32 ,  G06K19/07749 ,  H01L23/49855 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1266 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

摘要： Paper embedded with a semiconductor device capable of communicating wirelessly is realized, whose unevenness of a portion including the semiconductor device does not stand out and the paper is thin with a thickness of less than or equal to 130 μm. A semiconductor device is provided with a circuit portion and an antenna, and the circuit portion includes a thin film transistor. The circuit portion and the antenna are separated from a substrate used during manufacturing, and are interposed between a flexible base and a sealing layer and protected. The semiconductor device can be bent, and the thickness of the semiconductor device itself is less than or equal to 30 μm. The semiconductor device is embedded in a paper in a papermaking process.

摘要翻译： 实现了能够无线地进行通信的半导体装置的纸，其中包含半导体装置的部分的不均匀性不突出，并且纸薄而厚度小于或等于130μm。 半导体器件设置有电路部分和天线，并且电路部分包括薄膜晶体管。 电路部分和天线与在制造期间使用的基板分离，并且被插入在柔性基底和密封层之间并被保护。 半导体器件可以弯曲，并且半导体器件本身的厚度小于或等于30μm。 半导体器件以造纸工艺嵌入纸中。

公开(公告)号：US07485838B2

公开(公告)日：2009-02-03

申请号：US11491507

申请日：2006-07-24

申请人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

发明人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

IPC分类号： H03F3/08 ,  H03F3/04

CPC分类号： H01L31/102 ,  G01J1/44 ,  H01L31/145 ,  H04N5/2351

摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

摘要翻译： 本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分 或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置，能够检测弱光到强光的光。

公开(公告)号：US20070113886A1

公开(公告)日：2007-05-24

申请号：US11559477

申请日：2006-11-14

申请人： Tatsuya Arao ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi ,  Kazuo NISHI ,  Yuusuke Sugawara ,  Hironobu Takahashi ,  Shuji Fukai

发明人： Tatsuya Arao ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi ,  Kazuo NISHI ,  Yuusuke Sugawara ,  Hironobu Takahashi ,  Shuji Fukai

IPC分类号： H01L31/00

CPC分类号： H01L31/022408 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14692 ,  H01L31/03762

摘要： A photoelectric conversion device provided with a photoelectric conversion layer between a first electrode and a second electrode is formed. The first electrode is partially in contact with the photoelectric conversion layer, and a cross-sectional shape of the first electrode in the contact portion is a taper shape. In this case, part of a first semiconductor layer with one conductivity type is in contact with the first electrode. A planer shape in an edge portion of the first electrode is preferably nonangular, that is, a shape in which edges are planed or a curved shape. By such a structure, concentration of an electric field and concentration of a stress can be suppressed, whereby characteristic deterioration of the photoelectric conversion device can be reduced.

摘要翻译： 形成在第一电极和第二电极之间设置有光电转换层的光电转换装置。 第一电极部分地与光电转换层接触，并且接触部分中的第一电极的截面形状是锥形。 在这种情况下，具有一种导电类型的第一半导体层的一部分与第一电极接触。 第一电极的边缘部分中的平面形状优选地是非矩形的，即边缘是平面的形状或弯曲的形状。 通过这样的结构，可以抑制电场的浓度和应力的集中，从而可以降低光电转换装置的特性劣化。

公开(公告)号：US20060267204A1

公开(公告)日：2006-11-30

申请号：US11436090

申请日：2006-05-18

申请人： Hidekazu Takahashi ,  Daiki Yamada ,  Kyosuke Ito ,  Eiji Sugiyama ,  Yoshitaka Dozen

发明人： Hidekazu Takahashi ,  Daiki Yamada ,  Kyosuke Ito ,  Eiji Sugiyama ,  Yoshitaka Dozen

IPC分类号： H01L23/48

CPC分类号： H01L23/66 ,  H01L23/49855 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.

公开(公告)号：US09273886B2

公开(公告)日：2016-03-01

申请号：US14115153

申请日：2012-04-23

申请人： Hidekazu Takahashi ,  Yutaka Tasaki

发明人： Hidekazu Takahashi ,  Yutaka Tasaki

IPC分类号： F25B21/00

CPC分类号： F25B21/00 ,  F25B2321/0022 ,  Y02B30/66

摘要： A magnetic body is provided to improve heat transport capability and heat transport efficiency. A magnetic body arranged plate has magnetic body units each including magnetic members. Low-temperature side and high-temperature side heat exchange units are disposed at ends of each magnetic body unit. Permanent magnets and heat conductive members are arranged on a magnet/heat conductive member arranged plate. When the magnetic body arranged plate and the magnet/heat conductive member arranged plate are moved relative to each other, the permanent magnets apply magnetism separately to the magnetic members of each magnetic body unit. The magnet/heat conductive member arranged plate creates a temperature difference and conducts heat in one direction between the magnetic members, the low-temperature side heat exchange unit, and the high-temperature side heat exchange unit.

摘要翻译： 提供磁体以改善传热能力和传热效率。 磁体排列板具有各自包括磁性构件的磁性体单元。 低温侧和高温侧热交换单元配置在各磁体单元的端部。 永磁体和导热构件布置在磁/导热构件布置的板上。 当磁体排列板和磁体/导热构件布置板相对于彼此移动时，永磁体分别将磁力施加到每个磁体单元的磁性构件。 磁体/导热构件布置板产生温度差，并且在磁性构件，低温侧热交换单元和高温侧热交换单元之间沿一个方向传导热量。