公开(公告)号：US07466294B2

公开(公告)日：2008-12-16

申请号：US10786813

申请日：2004-02-25

申请人： Shunpei Yamazaki ,  Hiromichi Godo ,  Junichiro Sakata ,  Kaoru Tsuchiya

发明人： Shunpei Yamazaki ,  Hiromichi Godo ,  Junichiro Sakata ,  Kaoru Tsuchiya

IPC分类号： G09G3/32

CPC分类号： H01L27/322 ,  H01L27/3211 ,  H01L51/5262 ,  H01L2251/5323 ,  H01L2251/558

摘要： When materials of a cathode and an anode are transparent and a substrate with transparency is used for a substrate and a sealing substrate, luminescence from a layer including an organic compound can simultaneously perform two ways of display: luminescence passing a cathode and luminescence transmitted in an anode. However, interference effect by an optical distance difference results in difference in optical characteristics (such as a color tone) between luminescence from a top surface and luminescence from a bottom surface. According to the present invention, a light-emitting device having luminescence from a top surface and luminescence from a bottom surface provides both luminescence to a top surface and luminescence to a bottom surface with an image display having an uniform color tone and of high quality by regulating a film thickness of a transparent conductive film disposed on a cathode side and a film thickness of a cathode.

摘要翻译： 当阴极和阳极的材料是透明的并且具有透明度的基板用于基板和密封基板时，来自包括有机化合物的层的发光可以同时进行两种显示方式：通过阴极的发光和在 阳极。 然而，由于光距离的干涉效应导致来自顶面的发光与来自底面的发光之间的光学特性（例如色调）的差异。 根据本发明，具有来自顶表面的发光和来自底表面的发光的发光器件通过具有均匀色调的图像显示器和高质量的图像显示器向顶面提供发光和发光，并且通过 调节设置在阴极侧的透明导电膜的膜厚度和阴极的膜厚度。

公开(公告)号：US20070205423A1

公开(公告)日：2007-09-06

申请号：US11680287

申请日：2007-02-28

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Tomoya Aoyama ,  Kohei Ohshima ,  Rie Matsubara ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Tomoya Aoyama ,  Kohei Ohshima ,  Rie Matsubara ,  Hideaki Kuwabara

IPC分类号： H01L27/32

CPC分类号： H01L27/3225 ,  H01L27/286 ,  H01L27/3213 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3281 ,  H01L2251/5315 ,  H01L2251/5323

摘要： It is an object to provide a thin-type full-color display device with the long lifetime, inexpensively, in which desired emission luminance and desired color purity can be obtained at a low voltage. In a light-emitting device capable of full-color display, among a plurality of light-emitting elements emitting different emission colors (for example, colors of red (R), green (G), and blue (B)), at least one of the light-emitting elements of an emission color is a light-emitting element including an organic compound (an organic EL element), and the other light-emitting element of an emission color is a light-emitting element using an inorganic material as a light-emitting layer or a fluorescent layer (an inorganic EL element). It is to be noted that the organic EL element and the inorganic EL element are formed over the same substrate.

摘要翻译： 本发明的目的是提供一种寿命长，成本低廉的薄型全色显示装置，其中可以在低电压下获得期望的发光亮度和期望的色纯度。 在能够进行全色显示的发光装置中，在发射不同发光颜色（例如，红色（R），绿色（G）和蓝色（B）的颜色）的多个发光元件中至少 发光颜色的发光元件之一是包含有机化合物（有机EL元件）的发光元件，发光颜色的其他发光元件是使用无机材料的发光元件作为 发光层或荧光层（无机EL元件）。 应注意，有机EL元件和无机EL元件形成在相同的基板上。

公开(公告)号：US20060102910A1

公开(公告)日：2006-05-18

申请号：US11259689

申请日：2005-10-26

申请人： Shunpei Yamazaki ,  Masahiko Hayakawa ,  Koichiro Kamata ,  Hiroyuki Tomatsu ,  Hisao Ikeda ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Masahiko Hayakawa ,  Koichiro Kamata ,  Hiroyuki Tomatsu ,  Hisao Ikeda ,  Junichiro Sakata

IPC分类号： H01L31/12

CPC分类号： G09G3/3258 ,  G09G3/007 ,  G09G3/2022 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2310/0256 ,  G09G2310/027 ,  G09G2320/029 ,  G09G2320/043 ,  G09G2330/08 ,  H01L51/5265 ,  H01L2251/562 ,  Y02B10/14

摘要： An object of the present invention is to provide a new light emitting element with little initial deterioration, and a display device in which initial deterioration is reduced and variation in deterioration over time is reduced by a new method for driving a display device having the light emitting element. One feature of the invention is that a display device comprising a light emitting element including a first electrode, a second electrode opposed to the first electrode, and a mixed layer of metal oxide and an organic compound provided between the first electrode and the second electrode is subjected to aging drive.

公开(公告)号：US08912541B2

公开(公告)日：2014-12-16

申请号：US12848397

申请日：2010-08-02

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Miyuki Hosoba ,  Eriko Nishida

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Miyuki Hosoba ,  Eriko Nishida

IPC分类号： H01L29/12 ,  H01L27/12 ,  H01L29/45

CPC分类号： H01L29/45 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124

摘要： One object of the present invention is to increase an aperture ratio of a semiconductor device. A pixel portion and a driver circuit are provided over one substrate. The first thin film transistor (TFT) in the pixel portion includes: a gate electrode layer over the substrate; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; source and drain electrode layers over the oxide semiconductor layer; over the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, a protective insulating layer which is in contact with part of the oxide semiconductor layer; and a pixel electrode layer over the protective insulating layer. The pixel portion has light-transmitting properties. Further, a material of source and drain electrode layers of a second TFT in the driver circuit is different from a material of those of the first TFT.

摘要翻译： 本发明的一个目的是增加半导体器件的开口率。 像素部分和驱动电路设置在一个基板上。 像素部中的第一薄膜晶体管（TFT）包括：在基板上的栅电极层; 栅电极层上的栅极绝缘层; 栅极绝缘层上的氧化物半导体层; 氧化物半导体层上的源极和漏极电极层; 栅极绝缘层，氧化物半导体层，源极和漏极电极层上的与氧化物半导体层的一部分接触的保护绝缘层; 以及保护绝缘层上的像素电极层。 像素部分具有透光性。 此外，驱动电路中的第二TFT的源极和漏极电极层的材料与第一TFT的材料不同。

公开(公告)号：US08779418B2

公开(公告)日：2014-07-15

申请号：US12900136

申请日：2010-10-07

申请人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

发明人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

IPC分类号： H01L29/12

CPC分类号： H01L29/7869 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78618

摘要： An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.

摘要翻译： 目的是提供一种具有良好电特性的薄膜晶体管和包括薄膜晶体管作为开关元件的半导体器件。 薄膜晶体管包括形成在绝缘表面上的栅极电极，栅电极上的栅极绝缘膜，与栅极绝缘膜上的栅电极重叠的氧化物半导体膜，并且包括其中浓度为1或 包含在氧化物半导体中的多种金属高于其他区域，形成在氧化物半导体膜上并与该层接触的一对金属氧化物膜，以及与金属氧化物膜接触的源电极和漏电极 。 金属氧化物膜通过氧化源电极和漏电极中所含的金属而形成。

公开(公告)号：US08759131B2

公开(公告)日：2014-06-24

申请号：US12693818

申请日：2010-01-26

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Junichiro Sakata ,  Yoshiharu Hirakata ,  Norihito Sone

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Junichiro Sakata ,  Yoshiharu Hirakata ,  Norihito Sone

IPC分类号： H01L21/28

CPC分类号： H01L27/3244 ,  H01L27/322 ,  H01L27/3276 ,  H01L51/5048 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/52 ,  H01L51/5206 ,  H01L51/5215 ,  H01L51/5218 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5259 ,  H01L51/56

摘要： Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.

摘要翻译： 提供了用于制造具有高内部量子效率，消耗较少功率，具有高亮度并且具有高可靠性的发光装置的技术。 这些技术包括形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成阻挡层，其中氧化硅的密度高于导电光上的导电透光氧化物层的密度 形成具有导电透光性氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热阳极上形成电致发光层，在电致发光层上形成阴极。 根据该技术，在电致发光层和导电透光性氧化物层之间形成阻挡层。

公开(公告)号：US08648343B2

公开(公告)日：2014-02-11

申请号：US12839519

申请日：2010-07-20

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Ikuko Kawamata

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Ikuko Kawamata

IPC分类号： H01L27/12

CPC分类号： H01L27/1225 ,  H01L27/124

摘要： An object is to increase the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using a metal and a channel layer is formed using an oxide semiconductor, and a driver circuit wiring formed using a metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode and a drain electrode are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor, and a display portion wiring formed using an oxide conductor. The thin film transistors provided in the semiconductor device are formed with a resist mask formed using a multi-tone mask.

摘要翻译： 目的是提高半导体器件的开口率。 半导体器件包括驱动器电路部分和在同一衬底上的显示部分（也称为像素部分）。 驱动器电路部分包括用于驱动电路的沟道蚀刻薄膜晶体管，其中使用金属形成源电极和漏电极，并且使用氧化物半导体形成沟道层，以及使用 金属。 显示部分包括用于像素的沟道保护薄膜晶体管，其中使用氧化物导体形成源电极和漏电极，并且使用氧化物半导体形成半导体层，以及使用氧化物导体形成的显示部分布线 。 设置在半导体器件中的薄膜晶体管形成有使用多色调掩模形成的抗蚀剂掩模。

公开(公告)号：US08552423B2

公开(公告)日：2013-10-08

申请号：US12835903

申请日：2010-07-14

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Tatsuya Takahashi

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Tatsuya Takahashi

IPC分类号： H01L29/10

CPC分类号： H01L27/1225 ,  G02F1/1368 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/45 ,  H01L29/78645

摘要： An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

摘要翻译： 半导体器件的开口率提高。 驱动电路和像素设置在一个基板上，驱动电路中的第一薄膜晶体管和像素中的第二薄膜晶体管均包括栅极电极层，栅电极层上的栅极绝缘层，氧化物 栅极绝缘层上的半导体层，氧化物半导体层上的源极和漏极层以及与栅极绝缘层，氧化物半导体层以及源极和漏极上的部分氧化物半导体层接触的氧化物绝缘层 层。 栅极电极层，栅极绝缘层，氧化物半导体层，源极和漏极电极层以及第二薄膜晶体管的氧化物绝缘层各自具有透光性。

公开(公告)号：US08502225B2

公开(公告)日：2013-08-06

申请号：US12871176

申请日：2010-08-30

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

IPC分类号： H01L29/10 ,  H01L31/00

CPC分类号： H01L29/78696 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/127 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/247 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L51/52 ,  H01L2227/323

摘要： An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

公开(公告)号：US08431926B2

公开(公告)日：2013-04-30

申请号：US12872823

申请日：2010-08-31

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kosei Noda ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kosei Noda ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Hotaka Maruyama

IPC分类号： H01L29/12 ,  H01L29/786

摘要： It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.