公开(公告)号：US07777476B2

公开(公告)日：2010-08-17

申请号：US12139551

申请日：2008-06-16

申请人： Jun Hu ,  Jiang Zhe

发明人： Jun Hu ,  Jiang Zhe

IPC分类号： G01N27/00 ,  G01N15/00

CPC分类号： G01N15/12 ,  G01N15/1056 ,  G01N15/1245

摘要： The present invention generally relates to a method for rapidly counting micron and/or submicron particles by passing such particles through any of a plurality of microfluidic channels simultaneously with an ion current and measuring the signal generated thereby. The present invention also generally relates to a device for practicing the method of the present invention. Some embodiments can include methods and/or devices for distinguishing between and counting particles in mixtures. Still other embodiments can include methods and/or devices for identifying and/or counting bioparticles and/or bioactive particles such as pollen.

摘要翻译： 本发明一般涉及通过使这些颗粒与离子电流同时通过多个微流体通道中的任何一个并测量由此产生的信号来快速计数微米和/或亚微米颗粒的方法。 本发明还涉及用于实施本发明的方法的装置。 一些实施方案可以包括用于区分和计数混合物中的颗粒的方法和/或装置。 其它实施方案可以包括用于鉴定和/或计数生物颗粒和/或生物活性颗粒如花粉的方法和/或装置。

公开(公告)号：US20090251693A1

公开(公告)日：2009-10-08

申请号：US11577942

申请日：2005-10-31

申请人： Jun Hu

发明人： Jun Hu

IPC分类号： G01J3/44 ,  G01J3/46 ,  H01J49/26

CPC分类号： G01N33/66

摘要： A method of analyzing a target analyte using laser excitation spectroscopy, mass spectroscopy, or colormetric analysis, where the analysis is enhanced by using pyridinylboronic acid.

摘要翻译： 使用激光激发光谱，质谱或比色分析分析目标分析物的方法，其中通过使用吡啶基硼酸来增强分析。

公开(公告)号：US20090197632A1

公开(公告)日：2009-08-06

申请号：US12362435

申请日：2009-01-29

申请人： Donna Ghosh ,  Qingxin Chen ,  Christopher Gerard Lott ,  Jun Hu ,  Rashid Ahmed Akbar Attar ,  Kang Wang

发明人： Donna Ghosh ,  Qingxin Chen ,  Christopher Gerard Lott ,  Jun Hu ,  Rashid Ahmed Akbar Attar ,  Kang Wang

IPC分类号： H04B7/00

CPC分类号： H04W52/24 ,  H04W52/34

摘要： Allocating transmit power among two or more carriers assigned to a wireless communication device is disclosed. In one aspect, a method of allocating transmit power includes determining a total amount of data transmit power available at the wireless communication device for data transmission over the carriers. An efficiency metric is determined for each carrier based on the carrier's transmission characteristics and a portion of the total data transmit power is allocated to each carrier based on each carrier's efficiency metric.

摘要翻译： 公开了分配给无线通信设备的两个或多个载波之间的分配发射功率。 在一个方面，一种分配发射功率的方法包括确定在无线通信设备处可用的数据传输功率的总量，用于通过载波进行数据传输。 基于载波的传输特性为每个载波确定效率度量，并且基于每个载波的效率度量将总数据发射功率的一部分分配给每个载波。

公开(公告)号：US20090128074A1

公开(公告)日：2009-05-21

申请号：US11941125

申请日：2007-11-16

申请人： Jun Hu

发明人： Jun Hu

IPC分类号： H02P6/18 ,  H02P1/50

CPC分类号： H02P6/205 ,  H02P6/183 ,  H02P6/21 ,  H02P21/32 ,  H02P21/34 ,  H02P2203/11

摘要： A method for detecting an initial rotor angular position and starting a dynamoelectric machine having a stator and a rotor includes the steps of driving the dynamoelectric machine into partial magnetic saturation to determine the initial rotor angular position of the dynamoelectric machine, and starting the dynamoelectric machine utilizing the initial rotor angular position previously determined.

摘要翻译： 一种用于检测初始转子角位置并启动具有定子和转子的电动机的方法包括以下步骤：将电动机驱动到部分磁饱和状态，以确定电动机的初始转子角位置，并启动电动机利用 先前确定的初始转子角位置。

公开(公告)号：US07348441B2

公开(公告)日：2008-03-25

申请号：US10562090

申请日：2004-07-01

申请人： Jun Hu

发明人： Jun Hu

IPC分类号： C07D339/00

CPC分类号： C07D495/18 ,  C07D495/22

摘要： Methyl 2,4,9-trithiaadamantane-7-carboxylate and a method for its manufacture is disclosed. The method reacts oxidized methyl triallyl acetate with a Lewis acid and a sulphuring agent.

摘要翻译： 公开了2,4,9-三硫杂金刚烷-7-羧酸甲酯及其制备方法。 该方法使氧化甲基三烯丙基酯与路易斯酸和硫化剂反应。

公开(公告)号：US5880360A

公开(公告)日：1999-03-09

申请号：US871424

申请日：1997-06-09

申请人： Jun Hu ,  D. Frank Ogletree ,  Miguel Salmeron ,  Xudong Xiao

发明人： Jun Hu ,  D. Frank Ogletree ,  Miguel Salmeron ,  Xudong Xiao

IPC分类号： G01B7/34 ,  G01Q30/08 ,  G01Q30/14 ,  G01Q60/30 ,  G01Q60/40 ,  G01Q80/00

CPC分类号： G01Q30/14 ,  B82Y35/00 ,  G01Q60/30 ,  Y10S977/852 ,  Y10S977/86

摘要： The invention images dielectric polarization forces on surfaces induced by a charged scanning force microscope (SFM) probe tip. On insulators, the major contribution to the surface polarizability at low frequencies is from surface ions. The mobility of these ions depends strongly on the humidity. Using the inventive SFM, liquid films, droplets, and other weakly adsorbed materials have been imaged.

摘要翻译： 本发明将由电荷扫描力显微镜（SFM）探针尖端引起的表面上的介电极化力图像化。 在绝缘体上，低频表面极化率的主要贡献来自表面离子。 这些离子的迁移率在很大程度上取决于湿度。 使用本发明的SFM，液膜，液滴和其他弱吸附材料已被成像。

公开(公告)号：US11101346B2

公开(公告)日：2021-08-24

申请号：US15076553

申请日：2016-03-21

申请人： Jun Hu ,  Zhiyun Luo ,  Fei Wang

发明人： Jun Hu ,  Zhiyun Luo ,  Fei Wang

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L21/266 ,  H01L21/761

摘要： This invention discloses a semiconductor power device formed on a semiconductor substrate comprises an active cell area and a termination area disposed near edges of the semiconductor substrate. The termination area comprises a plurality of duplicated units wherein each unit includes at least two trenches filled with a conductive trench material having a mesa area between adjacent trenches wherein the trenches and the mesa areas within each of the duplicated units are electrically shunt together. In the termination area each of the trenches in the duplicated units has a buried guard ring dopant region disposed below a bottom surface of the trenches.

公开(公告)号：US10896959B2

公开(公告)日：2021-01-19

申请号：US15185507

申请日：2016-06-17

申请人： Jun Hu

发明人： Jun Hu

IPC分类号： H01L29/10 ,  H01L29/06 ,  H01L29/78 ,  H01L29/08 ,  H01L29/40

摘要： This invention discloses a semiconductor power device formed on an upper epitaxial layer of a first conductivity type supported on a semiconductor substrate. The semiconductor power device having a super junction structure with the epitaxial layer formed with a plurality of vertically extended doped columns of a second conductivity type. The semiconductor power device further comprises a plurality of transistor cells each of the transistor cells comprises a planar gate extending over a top surface and each of the planar gates further includes a middle trench gate extending vertically into the epitaxial layer from a middle portion of the planar gates. Each of the middle trench gates is surrounded by a source region of the first conductivity type encompassed in a body region of the second conductivity type extending substantially between two adjacent doped columns of the second conductivity type.

公开(公告)号：US09163002B2

公开(公告)日：2015-10-20

申请号：US14049809

申请日：2013-10-09

申请人： Qian Wang ,  Jun Hu

发明人： Qian Wang ,  Jun Hu

IPC分类号： C07D311/86

CPC分类号： C07D311/86

摘要： Methods are provided for forming a xanthone derivative via reacting a 2-substituted benzaldehyde with a phenol derivative to form the xanthone derivative.

摘要翻译： 提供了通过2-取代的苯甲醛与酚衍生物反应形成呫吨酮衍生物以形成呫吨酮衍生物的方法。

公开(公告)号：US09048282B2

公开(公告)日：2015-06-02

申请号：US13831066

申请日：2013-03-14

申请人： Jun Hu ,  Madhur Bobde ,  Hamza Yilmaz

发明人： Jun Hu ,  Madhur Bobde ,  Hamza Yilmaz

IPC分类号： H01L29/66 ,  H01L29/739

CPC分类号： H01L29/7395 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66333

摘要： A method of manufacturing an insulated gate bipolar transistor (IGBT) device comprising 1) preparing a semiconductor substrate with an epitaxial layer of a first conductivity type supported on the semiconductor substrate of a second conductivity type; 2) applying a gate trench mask to open a first trench and second trench followed by forming a gate insulation layer to pad the trench and filling the trench with a polysilicon layer to form the first trench gate and the second trench gate; 3) implanting dopants of the first conductivity type to form an upper heavily doped region in the epitaxial layer; and 4) forming a planar gate on top of the first trench gate and apply implanting masks to implant body dopants and source dopants to form a body region and a source region near a top surface of the semiconductor substrate.

摘要翻译： 一种制造绝缘栅双极晶体管（IGBT）器件的方法，包括：1）制备具有第一导电类型的外延层的半导体衬底，该半导体衬底支撑在第二导电类型的半导体衬底上; 2）施加栅极沟槽掩模以打开第一沟槽和第二沟槽，随后形成栅极绝缘层以衬垫沟槽并用多晶硅层填充沟槽以形成第一沟槽栅极和第二沟槽栅极; 3）注入第一导电类型的掺杂剂以在外延层中形成上重掺杂区; 以及4）在所述第一沟槽栅极的顶部上形成平面栅极，并且将注入掩模施加到植入物体掺杂剂和源掺杂剂以在所述半导体衬底的顶表面附近形成体区域和源极区域。