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    Storage element and memory
    41.
    发明授权
    Storage element and memory 有权

    公开(公告)号：US10121963B2

    公开(公告)日：2018-11-06

    申请号：US15667750

    申请日：2017-08-03

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    IPC: H01L43/10 ,  G11C11/16 ,  H01F41/32 ,  H01F10/32 ,  B82Y25/00 ,  H01L43/08 ,  H01L43/02 ,  H01L27/22

    Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

    Storage element and storage apparatus
    46.
    发明授权
    Storage element and storage apparatus 有权
    存储元件和存储设备

    公开(公告)号：US09444034B2

    公开(公告)日：2016-09-13

    申请号：US14354760

    申请日：2012-10-31

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC: G11C11/14 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  G11B5/39 ,  H01F10/32 ,  G11C11/155 ,  G11C11/16

    CPC classification number: G11C11/161 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/15 ,  G11C11/155 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

    Abstract: [Object] To provide a storage element and a storage apparatus capable of performing writing operation in a short time without generating write errors.[Solving Means] A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

    Abstract translation: [解决方案]存储元件包括层结构，该层结构包括具有根据信息改变的磁化方向的存储层，具有固定的磁化方向的磁化固定层和设置在其间的中间层，该中间层包含非磁性 材料。 磁化固定层具有至少两个铁磁层，其具有从垂直于膜表面的方向倾斜的磁化方向，这两个铁磁层层叠并磁耦合在其间插入耦合层。 该构造可以有效地防止由于存储层和磁化固定层的磁化方向基本上平行或反平行的磁化反转时间的发散，减少写入错误，并且能够在短时间内实现写入操作。

    MEMORY ELEMENT AND MEMORY DEVICE
    48.
    发明申请
    MEMORY ELEMENT AND MEMORY DEVICE 审中-公开
    存储元件和存储器件

    公开(公告)号：US20160163969A1

    公开(公告)日：2016-06-09

    申请号：US15047311

    申请日：2016-02-18

    Applicant: Sony Corporation

    Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida ,  Tetsuya Asayama

    IPC: H01L43/10 ,  H01L43/02

    CPC classification number: H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08

    Abstract: There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.

    Abstract translation: 公开了一种信息存储元件，包括：第一层，其包括具有垂直于膜面的磁化方向的铁磁层; 耦合到所述第一层的绝缘层; 以及耦合到与所述第一层相对的所述绝缘层的第二层，所述第二层包括固定磁化，以便能够用作所述第一层的参考。 第一层能够根据磁性材料的磁化状态存储信息，并且磁化状态被配置为通过自旋注入而改变。 第一层接收的有效抗磁场的大小小于第一层的饱和磁化量。

    Perpendicular magnetization storage element and storage device
    49.
    发明授权
    Perpendicular magnetization storage element and storage device 有权
    垂直磁化存储元件和存储装置

    公开(公告)号：US09356230B2

    公开(公告)日：2016-05-31

    申请号：US14478642

    申请日：2014-09-05

    Applicant: Sony Corporation

    Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane

    IPC: H01L43/10 ,  H01L43/08 ,  G11C11/16 ,  H01L27/22

    CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/226 ,  H01L43/08

    Abstract: A storage element includes a storage layer which has magnetization perpendicular to its film surface and which retains information by a magnetization state of a magnetic substance, a magnetization pinned layer having magnetization perpendicular to its film surface which is used as the basis of the information stored in the storage layer, an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer, and a cap layer which is provided adjacent to the storage layer at a side opposite to the interlayer and which includes at least two oxide layers. The storage element is configured to store information by reversing the magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer.

    Abstract translation: 存储元件包括具有垂直于其膜表面的磁化并且通过磁性物质的磁化状态保持信息的存储层，具有垂直于其膜表面的磁化的磁化固定层，其被用作存储在其中的信息的基础 所述存储层，设置在所述存储层和所述磁化被钉扎层之间的非磁性物质的中间层，以及在与所述中间层相对的一侧设置在所述存储层附近并且包括至少两个氧化物层的盖层 。 存储元件被配置为通过使用由包括存储层，中间层和磁化固定层的层结构的层叠方向通过的电流产生的自旋转矩磁化反转来反转存储层的磁化来存储信息。

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