公开(公告)号：US07790015B2

公开(公告)日：2010-09-07

申请号：US11930495

申请日：2007-10-31

申请人： Yan Wang ,  Antoine P. Manens ,  Siew S. Neo ,  Alain Duboust ,  Liang-Yuh Chen

发明人： Yan Wang ,  Antoine P. Manens ,  Siew S. Neo ,  Alain Duboust ,  Liang-Yuh Chen

IPC分类号： B23H3/02 ,  C25F7/00

CPC分类号： H01L21/32134 ,  B23H5/06 ,  B23H5/08 ,  B24B37/013 ,  B24B37/042 ,  B24B37/046 ,  B24B49/04 ,  B24B49/10 ,  B24B49/16 ,  G01N1/32 ,  H01L21/32125 ,  H04N1/00

摘要： Method for process control of electro-processes is provided. In one embodiment, the method includes processing a conductive layer formed on a wafer using a target endpoint, detecting breakthrough of the conductive layer to expose portions of an underlying layer, and adjusting the target endpoint in response to the detected breakthrough. In another embodiment, the target endpoint is adjusted relative to an amount of underlying layer exposed through the conductive layer.

摘要翻译： 提供了电工艺过程控制方法。 在一个实施例中，该方法包括使用目标端点处理在晶片上形成的导电层，检测导电层的穿透以暴露下层的部分，以及响应于检测到的突破来调整目标端点。 在另一个实施例中，相对于通过导电层暴露的下层的量来调整目标端点。

公开(公告)号：US07709382B2

公开(公告)日：2010-05-04

申请号：US11877233

申请日：2007-10-23

申请人： Antoine P. Manens ,  Vladimir Galburt ,  Yan Wang ,  Alain Duboust ,  Donald J. K. Olgado ,  Liang-Yuh Chen

发明人： Antoine P. Manens ,  Vladimir Galburt ,  Yan Wang ,  Alain Duboust ,  Donald J. K. Olgado ,  Liang-Yuh Chen

IPC分类号： H01L21/44 ,  H01L21/302 ,  H01L21/461

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25D17/10 ,  C25F7/00

摘要： Embodiments of the present invention provide methods of electroprocessing a substrate. One embodiment of the present invention provides a method comprises pressing a substrate against a polishing pad with a force less than about two pounds per square inch, the substrate contacting a first electrode of the polishing pad, applying an electrical bias to the substrate with the first electrode relative to a second electrode of the polishing pad, wherein the second electrode is disposed below the second electrode, and biasing a third electrode disposed in the polishing pad radially outward of the second electrode.

摘要翻译： 本发明的实施方案提供了对基底进行电处理的方法。 本发明的一个实施方案提供了一种方法，包括以小于约2磅/平方英寸的力将衬底压靠抛光垫，衬底与抛光垫的第一电极接触，将第一电极施加电偏压至衬底 电极，其中所述第二电极设置在所述第二电极下方，并且偏置设置在所述抛光垫中的第三电极，所述第三电极位于所述第二电极的径向外侧。

公开(公告)号：US20080045012A1

公开(公告)日：2008-02-21

申请号：US11877233

申请日：2007-10-23

申请人： Antoine Manens ,  Vladimir Galburt ,  Yan Wang ,  Alain Duboust ,  Donald Olgado ,  Liang-Yuh Chen

发明人： Antoine Manens ,  Vladimir Galburt ,  Yan Wang ,  Alain Duboust ,  Donald Olgado ,  Liang-Yuh Chen

IPC分类号： H01L21/44

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25D17/10 ,  C25F7/00

摘要： Embodiments of the present invention provide methods of electroprocessing a substrate. One embodiment of the present invention provides a method comprises pressing a substrate against a polishing pad with a force less than about two pounds per square inch, the substrate contacting a first electrode of the polishing pad, applying an electrical bias to the substrate with the first electrode relative to a second electrode of the polishing pad, wherein the second electrode is disposed below the second electrode, and biasing a third electrode disposed in the polishing pad radially outward of the second electrode.

摘要翻译： 本发明的实施方案提供了对基底进行电处理的方法。 本发明的一个实施方案提供了一种方法，包括以小于约2磅/平方英寸的力将衬底压靠抛光垫，衬底与抛光垫的第一电极接触，将第一电极施加电偏压至衬底 电极，其中所述第二电极设置在所述第二电极下方，并且偏置设置在所述抛光垫中的第三电极，所述第三电极位于所述第二电极的径向外侧。

公开(公告)号：US20080003931A1

公开(公告)日：2008-01-03

申请号：US11562811

申请日：2006-11-22

申请人： Antoine Manens ,  Alain Duboust ,  Paul Butterfield ,  Yan Wang ,  Shi-Ping Wang ,  Zhihong Wang ,  Andrew Nagengast ,  Wei-Yung Hsu ,  Liang-Yuh Chen

发明人： Antoine Manens ,  Alain Duboust ,  Paul Butterfield ,  Yan Wang ,  Shi-Ping Wang ,  Zhihong Wang ,  Andrew Nagengast ,  Wei-Yung Hsu ,  Liang-Yuh Chen

IPC分类号： B24B53/007

CPC分类号： B24B37/30 ,  B24B55/00 ,  H01L21/67219

摘要： A carrier head and a method of cleaning the carrier head are disclosed. The carrier head may have one or more openings through a sidewall that extend into a cavity within the carrier head using a fluid passage. The openings may each have a lip. The lip may have a chamfered edge. Additionally, a fluid passage may slope generally downward from the openings to the cavity. The chamfered lips and the sloped fluid passage reduce back splashing and help ensure that sufficient rinsing fluid reaches the cavity to rinse polishing fluid and particles from the carrier head. The present invention relates to carrier heads for polishing or planarizing semiconductor substrates by chemical mechanical polishing (CMP) or electrochemical mechanical polishing (ECMP). The cavities in the carrier head are cleaned by rinsing fluid (i.e., liquid or gas) from inside the cavity towards a substrate receiving side of the carrier head.

摘要翻译： 公开了载体头和清洁载体头的方法。 载体头部可以具有穿过侧壁的一个或多个开口，该侧壁使用流体通道延伸到载体头部内的空腔中。 开口可以各自具有唇缘。 唇缘可以具有倒角边缘。 此外，流体通道可以从开口大致向下倾斜到空腔。 倒角的唇缘和倾斜的流体通道减少了飞溅，并有助于确保足够的冲洗流体到达腔体以从载体头部漂洗抛光液和颗粒。 本发明涉及用于通过化学机械抛光（CMP）或电化学机械抛光（ECMP）对半导体衬底进行抛光或平面化的载体头。 载体头部中的空腔通过从空腔内部朝向承载头的基板接收侧的冲洗流体（即，液体或气体）来清洁。

公开(公告)号：US20060166500A1

公开(公告)日：2006-07-27

申请号：US11043570

申请日：2005-01-26

申请人： Antoine Manens ,  Vladimir Galburt ,  Yan Wang ,  Alain Duboust ,  Donald Olgado ,  Liang-Yuh Chen

发明人： Antoine Manens ,  Vladimir Galburt ,  Yan Wang ,  Alain Duboust ,  Donald Olgado ,  Liang-Yuh Chen

IPC分类号： H01L21/44

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25D17/10 ,  C25F7/00

摘要： A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially outward of substrate with a polarity opposite the bias applied tot he first electrode.

摘要翻译： 提供了一种用于电子处理衬底的方法和装置。 在一个实施例中，一种用于对衬底进行电处理的方法包括以下步骤：偏置第一电极以在电极和衬底之间建立第一电处理区，并且以与其施加的偏压相反的极性偏置衬底径向外侧的第二电极 第一电极。

公开(公告)号：US20050061674A1

公开(公告)日：2005-03-24

申请号：US10949160

申请日：2004-09-24

申请人： Yan Wang ,  Antoine Manens ,  Siew Neo ,  Alain Duboust ,  Liang-Yuh Chen

发明人： Yan Wang ,  Antoine Manens ,  Siew Neo ,  Alain Duboust ,  Liang-Yuh Chen

IPC分类号： B23H5/06 ,  B23H5/08 ,  B24B37/04 ,  B24B49/04 ,  B24B49/16 ,  H04N1/00 ,  B23H9/00

CPC分类号： H01L21/32134 ,  B23H5/06 ,  B23H5/08 ,  B24B37/013 ,  B24B37/042 ,  B24B37/046 ,  B24B49/04 ,  B24B49/10 ,  B24B49/16 ,  G01N1/32 ,  H01L21/32125 ,  H04N1/00

摘要： Method for process control of electro-processes is provided. In one embodiment, the method includes processing a conductive layer formed on a wafer using a target endpoint, detecting breakthrough of the conductive layer to expose portions of an underlying layer, and adjusting the target endpoint in response to the detected breakthrough. In another embodiment, the target endpoint is adjusted relative to an amount of underlying layer exposed through the conductive layer.

摘要翻译： 提供了电工艺过程控制方法。 在一个实施例中，该方法包括使用目标端点处理在晶片上形成的导电层，检测导电层的穿透以暴露下层的部分，以及响应于检测到的突破来调整目标端点。 在另一个实施例中，相对于通过导电层暴露的下层的量来调整目标端点。

公开(公告)号：US07655565B2

公开(公告)日：2010-02-02

申请号：US11043570

申请日：2005-01-26

申请人： Antoine P. Manens ,  Vladimir Galburt ,  Yan Wang ,  Alain Duboust ,  Donald J. K. Olgado ,  Liang-Yuh Chen

发明人： Antoine P. Manens ,  Vladimir Galburt ,  Yan Wang ,  Alain Duboust ,  Donald J. K. Olgado ,  Liang-Yuh Chen

IPC分类号： H01L21/44 ,  H01L21/302 ,  H01L21/461

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25D17/10 ,  C25F7/00

摘要： A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially outward of substrate with a polarity opposite the bias applied tot he first electrode.

摘要翻译： 提供了一种用于电子处理衬底的方法和装置。 在一个实施例中，一种用于对衬底进行电处理的方法包括以下步骤：偏置第一电极以在电极和衬底之间建立第一电处理区，并且以与其施加的偏压相反的极性偏置衬底径向外侧的第二电极 第一电极。

公开(公告)号：US07323416B2

公开(公告)日：2008-01-29

申请号：US11196876

申请日：2005-08-04

申请人： Feng Q. Liu ,  Tianbao Du ,  Alain Duboust ,  Yan Wang ,  Yongqi Hu ,  Stan D. Tsai ,  Liang-Yuh Chen ,  Wen-Chiang Tu ,  Wei-Yung Hsu

发明人： Feng Q. Liu ,  Tianbao Du ,  Alain Duboust ,  Yan Wang ,  Yongqi Hu ,  Stan D. Tsai ,  Liang-Yuh Chen ,  Wen-Chiang Tu ,  Wei-Yung Hsu

IPC分类号： H01L21/302

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25F3/02 ,  H01L21/32125 ,  H01L21/6875 ,  H01L21/7684

摘要： Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a method is provided for processing a substrate to remove conductive material disposed over narrow feature definitions formed in a substrate at a higher removal rate than conductive material disposed over wide feature definitions formed in a substrate by an electrochemical mechanical polishing technique, and then polishing the substrate by at least a chemical mechanical polishing technique.

摘要翻译： 提供了抛光组合物和从衬底表面去除导电材料的方法。 在一个方面，提供了一种处理衬底以除去布置在形成于衬底中的窄特征定义上的导电材料的方法，该导电材料以比通过电化学机械抛光技术在衬底中形成的宽特征定义上布置的导电材料更高的去除速率除去，以及 然后用至少一种化学机械抛光技术研磨衬底。

公开(公告)号：US07276743B2

公开(公告)日：2007-10-02

申请号：US11127790

申请日：2005-05-11

申请人： Antoine P. Manens ,  Suresh Shrauti ,  Alain Duboust ,  Yan Wang ,  Liang-Yuh Chen

发明人： Antoine P. Manens ,  Suresh Shrauti ,  Alain Duboust ,  Yan Wang ,  Liang-Yuh Chen

IPC分类号： H01L29/74 ,  H01L31/111

CPC分类号： B23H5/08 ,  B24B37/32

摘要： A retaining ring for use with electrochemical mechanical processing is described. The retaining ring has a generally annular body formed with a conductive portion and a non-conductive portion. The non-conductive portion contacts the substrate during polishing. The conductive portion is electrically biased during polishing to reduce the edge effect that tends to occur with conventional electrochemical mechanical processing systems.

摘要翻译： 描述了一种用于电化学机械加工的保持环。 保持环具有形成有导电部分和非导电部分的大致环形体。 非导电部分在抛光期间接触基板。 导电部分在抛光期间被电偏置以减少常规电化学机械处理系统倾向于发生的边缘效应。

公开(公告)号：US07128825B2

公开(公告)日：2006-10-31

申请号：US10378097

申请日：2003-02-26

申请人： Feng Q. Liu ,  Stan D. Tsai ,  Yongqi Hu ,  Siew S. Neo ,  Yan Wang ,  Alain Duboust ,  Liang-Yuh Chen

发明人： Feng Q. Liu ,  Stan D. Tsai ,  Yongqi Hu ,  Siew S. Neo ,  Yan Wang ,  Alain Duboust ,  Liang-Yuh Chen

IPC分类号： C25F3/00

CPC分类号： H01L21/32125 ,  B23H3/08 ,  B23H5/08 ,  B24B37/0056 ,  B24B37/044 ,  B24B37/046 ,  C09G1/02 ,  C09G1/04 ,  C25F3/02 ,  H01L21/32134

摘要： Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition includes an acid based electrolyte system, one or more chelating agents, one or more corrosion inhibitors, one or more inorganic or organic acid salts, one or more pH adjusting agents to provide a pH between about 3 and about 10, a polishing enhancing material selected from the group of abrasive particles, one or more oxidizers, and combinations thereof, and a solvent. The composition may be used in an conductive material removal process including disposing a substrate having a conductive material layer formed thereon in a process apparatus comprising an electrode, providing the composition between the electrode and substrate, applying a bias between the electrode and the substrate, and removing conductive material from the conductive material layer.