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101 条记录 (耗时 0.041 秒)

    SYSTEM AND METHOD FOR IN-SITU HEAD RINSE
    1.
    发明申请
    SYSTEM AND METHOD FOR IN-SITU HEAD RINSE 审中-公开
    用于现场头部冲洗的系统和方法

    公开(公告)号：US20080003931A1

    公开(公告)日：2008-01-03

    申请号：US11562811

    申请日：2006-11-22

    申请人： Antoine Manens ,  Alain Duboust ,  Paul Butterfield ,  Yan Wang ,  Shi-Ping Wang ,  Zhihong Wang ,  Andrew Nagengast ,  Wei-Yung Hsu ,  Liang-Yuh Chen

    发明人： Antoine Manens ,  Alain Duboust ,  Paul Butterfield ,  Yan Wang ,  Shi-Ping Wang ,  Zhihong Wang ,  Andrew Nagengast ,  Wei-Yung Hsu ,  Liang-Yuh Chen

    IPC分类号： B24B53/007

    CPC分类号： B24B37/30 ,  B24B55/00 ,  H01L21/67219

    摘要： A carrier head and a method of cleaning the carrier head are disclosed. The carrier head may have one or more openings through a sidewall that extend into a cavity within the carrier head using a fluid passage. The openings may each have a lip. The lip may have a chamfered edge. Additionally, a fluid passage may slope generally downward from the openings to the cavity. The chamfered lips and the sloped fluid passage reduce back splashing and help ensure that sufficient rinsing fluid reaches the cavity to rinse polishing fluid and particles from the carrier head. The present invention relates to carrier heads for polishing or planarizing semiconductor substrates by chemical mechanical polishing (CMP) or electrochemical mechanical polishing (ECMP). The cavities in the carrier head are cleaned by rinsing fluid (i.e., liquid or gas) from inside the cavity towards a substrate receiving side of the carrier head.

    摘要翻译： 公开了载体头和清洁载体头的方法。 载体头部可以具有穿过侧壁的一个或多个开口，该侧壁使用流体通道延伸到载体头部内的空腔中。 开口可以各自具有唇缘。 唇缘可以具有倒角边缘。 此外，流体通道可以从开口大致向下倾斜到空腔。 倒角的唇缘和倾斜的流体通道减少了飞溅，并有助于确保足够的冲洗流体到达腔体以从载体头部漂洗抛光液和颗粒。 本发明涉及用于通过化学机械抛光（CMP）或电化学机械抛光（ECMP）对半导体衬底进行抛光或平面化的载体头。 载体头部中的空腔通过从空腔内部朝向承载头的基板接收侧的冲洗流体（即，液体或气体）来清洁。

    Metal CMP process on one or more polishing stations using slurries with oxidizers
    3.
    发明申请
    Metal CMP process on one or more polishing stations using slurries with oxidizers 审中-公开
    使用具有氧化剂的浆料在一个或多个抛光站上进行金属CMP处理

    公开(公告)号：US20060219663A1

    公开(公告)日：2006-10-05

    申请号：US11338146

    申请日：2006-01-23

    申请人： Shi-Ping Wang ,  Martin Wohlert ,  Alain Duboust ,  Renhe Jia ,  Feng Liu ,  Yuan Tian ,  Liang-Yuh Chen ,  Stan Tsai ,  Wei-Yung Hsu

    发明人： Shi-Ping Wang ,  Martin Wohlert ,  Alain Duboust ,  Renhe Jia ,  Feng Liu ,  Yuan Tian ,  Liang-Yuh Chen ,  Stan Tsai ,  Wei-Yung Hsu

    IPC分类号： C03C15/00 ,  H01L21/302 ,  B44C1/22 ,  H01L21/461

    CPC分类号： H01L21/3212 ,  C09G1/02 ,  C23F3/04 ,  C23F3/06 ,  H01L21/32125 ,  H01L21/7684

    摘要： Polishing compositions and methods for removing conductive materials and barrier materials from a substrate surface are provided. In one aspect, a full sequence electrochemical mechanical planarization technique is provided. In another aspect, a hybrid planarization technique using combination of at least one chemical mechanical polishing process and at least one electrochemical mechanical polishing process is provided. In addition, a multi-step polishing process for polishing a substrate surface using at least two oxidizers in one or more polishing composition is described. The polishing composition may be used in the full sequence or the hybrid planarization technique. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface with a reduction in planarization defects.

    摘要翻译： 提供了抛光组合物和从衬底表面去除导电材料和阻挡材料的方法。 一方面，提供了全序列电化学机械平面化技术。 在另一方面，提供了使用至少一种化学机械抛光工艺和至少一种电化学机械抛光工艺的组合的混合平面化技术。 此外，描述了在一种或多种研磨组合物中使用至少两种氧化剂来研磨衬底表面的多步抛光方法。 抛光组合物可以以全序或混合平面化技术使用。 本文所述的抛光组合物和方法改善了材料从衬底表面的有效去除速率，同时减小了平坦化缺陷。

    Methods and apparatus for electroprocessing with recessed bias contact
    6.
    发明申请
    Methods and apparatus for electroprocessing with recessed bias contact 审中-公开
    具有凹陷偏置接触的电加工方法和装置

    公开(公告)号：US20070215488A1

    公开(公告)日：2007-09-20

    申请号：US11377990

    申请日：2006-03-17

    申请人： Yan Wang ,  Wei-Yung Hsu ,  Alain Duboust ,  Antoine Manens

    发明人： Yan Wang ,  Wei-Yung Hsu ,  Alain Duboust ,  Antoine Manens

    IPC分类号： C25C7/02 ,  B23H5/06

    CPC分类号： B23H5/08 ,  B24B37/046 ,  B24B37/20 ,  C25D17/10 ,  C25F7/00

    摘要： A method and apparatus are provided for electroprocessing with recessed bias contact. In one embodiment, the apparatus includes a platen, a processing pad disposed on the platen and having at least a first aperture and a second aperture formed therethrough, a first electrode positioned under the processing pad and exposed to a polishing surface of the processing pad through the first aperture, wherein an upper surface of the first electrode is recessed from the polishing surface; a plurality of second electrodes exposed to the polishing surface through the second aperture, wherein upper surfaces of the second electrodes are recessed from the polishing surface, and an electrical circuit coupled to the first and second electrodes and configured to bias each of the second electrodes independently relative to the first electrode.

    摘要翻译： 提供了一种用于具有凹陷偏压接触的电处理的方法和装置。 在一个实施例中，该装置包括压板，设置在压板上并具有至少第一孔和穿过其中形成的第二孔的处理垫，位于处理垫下方并暴露于处理垫的抛光表面的第一电极 所述第一孔径，其中所述第一电极的上表面从所述抛光表面凹陷; 通过第二孔暴露于抛光表面的多个第二电极，其中第二电极的上表面从抛光表面凹陷，以及耦合到第一和第二电极并被配置为独立地偏置每个第二电极的电路 相对于第一电极。

    Planarization of substrates at a high polishing rate using electrochemical mechanical polishing
    8.
    发明申请
    Planarization of substrates at a high polishing rate using electrochemical mechanical polishing 审中-公开
    使用电化学机械抛光以高抛光速率平铺基板

    公开(公告)号：US20070243709A1

    公开(公告)日：2007-10-18

    申请号：US11404524

    申请日：2006-04-14

    申请人： Alain Duboust ,  Wei-Yung Hsu ,  Feng Liu ,  Yan Wang ,  Zhihong Wang

    发明人： Alain Duboust ,  Wei-Yung Hsu ,  Feng Liu ,  Yan Wang ,  Zhihong Wang

    IPC分类号： H01L21/461 ,  B23H9/00

    CPC分类号： B23H5/08 ,  B24B37/042 ,  C25D11/34 ,  C25F1/04 ,  H01L21/32125

    摘要： A method and apparatus for removing conductive material from a substrate surface are provided. In one embodiment, a method is provided for electrochemical mechanical polishing of a substrate. A substrate comprising dielectric feature definitions, a barrier material disposed on the feature definitions, and a bulk conductive material in an amount sufficient to fill the feature definitions is provided. The substrate is exposed to an electrolyte solution. A passivation layer is formed on the conductive material. The passivation strength of the passivation layer is increased by polishing the substrate with a first voltage for a first time period. The substrate is polished with a second voltage higher than the first voltage for a second time period. Conductive material is removed from at least a portion of the substrate surface by anodic dissolution.

    摘要翻译： 提供了用于从基板表面去除导电材料的方法和装置。 在一个实施例中，提供了一种用于衬底的电化学机械抛光的方法。 提供了包括介电特征定义的基板，设置在特征定义上的阻挡材料以及足以填充特征定义的量的体导电材料。 将基底暴露于电解质溶液。 在导电材料上形成钝化层。 通过用第一时间段的第一电压抛光衬底来增加钝化层的钝化强度。 在第二时间段内以比第一电压高的第二电压来抛光衬底。 通过阳极溶解从导电材料的至少一部分去除导电材料。

    ECMP POLISHING SEQUENCE TO IMPROVE PLANARITY AND DEFECT PERFORMANCE
    9.
    发明申请
    ECMP POLISHING SEQUENCE TO IMPROVE PLANARITY AND DEFECT PERFORMANCE 审中-公开
    ECMP抛光顺序提高平面度和缺陷性能

    公开(公告)号：US20090061741A1

    公开(公告)日：2009-03-05

    申请号：US11849724

    申请日：2007-09-04

    申请人： Zhihong Wang ,  Alain Duboust ,  Wei-Yung Hsu ,  Yan Wang

    发明人： Zhihong Wang ,  Alain Duboust ,  Wei-Yung Hsu ,  Yan Wang

    IPC分类号： B24B7/04

    CPC分类号： B24B37/042 ,  H01L21/67219

    摘要： A method for processing a substrate having a conductive layer disposed thereon is provided. The substrate is coupled with a planarizing head. The planarizing head is moved to a position above a polishing pad assembly. The planarizing pad is positioned relative to the polishing pad assembly without applying a voltage to the substrate. A first voltage is applied to the substrate for a first time period. A second voltage is applied to the substrate for a second time period in order to remove a portion of the conductive layer, wherein the second voltage is greater than the first voltage. In certain embodiments, applying a first voltage to the substrate further comprises forming a uniform passivation layer on the conductive layer.

    摘要翻译： 提供一种处理其上设置有导电层的基板的方法。 衬底与平坦化头结合。 平坦化头移动到抛光垫组件上方的位置。 平面化焊盘相对于抛光垫组件定位，而不向衬底施加电压。 第一次施加第一电压到基板。 向基板施加第二电压第二时间段，以便去除导电层的一部分，其中第二电压大于第一电压。 在某些实施例中，向衬底施加第一电压还包括在导电层上形成均匀的钝化层。

    Method for electrochemically polishing a conductive material on a substrate
    10.
    发明申请
    Method for electrochemically polishing a conductive material on a substrate 审中-公开
    在基板上电化学研磨导电材料的方法

    公开(公告)号：US20070187258A1

    公开(公告)日：2007-08-16

    申请号：US11355769

    申请日：2006-02-15

    申请人： Tianbao Du ,  Feng Liu ,  Alain Duboust ,  Wei-Yung Hsu ,  Liang-Yuh Chen

    发明人： Tianbao Du ,  Feng Liu ,  Alain Duboust ,  Wei-Yung Hsu ,  Liang-Yuh Chen

    IPC分类号： B23H5/00

    CPC分类号： B23H5/08 ,  B24B37/042 ,  C25F3/02 ,  H01L21/32125

    摘要： Methods are provided for removing conductive materials from a substrate surface. In one aspect, a method includes providing a substrate comprising dielectric feature definitions formed between substrate field regions, a barrier material disposed in the feature definitions and on the substrate field regions, and a conductive material disposed on the barrier material, polishing the substrate to substantially remove a bulk portion of the conductive material with a direct current bias, and polishing the substrate to remove a residual portion of the conductive material with a pulse bias.

    摘要翻译： 提供了从衬底表面去除导电材料的方法。 在一个方面，一种方法包括提供包括在衬底场区域之间形成的介电特征定义的衬底，设置在特征定义中的衬底场区域上的阻挡材料和设置在阻挡材料上的导电材料， 以直流偏压去除导电材料的主体部分，并抛光衬底以用脉冲偏压去除导电材料的剩余部分。