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    Magnetoresistive effect element with intermediate oxide layer containing boron and an element selected from Ca, Mg, Sr, Ba, Ti, and Sc
    43.
    发明授权
    Magnetoresistive effect element with intermediate oxide layer containing boron and an element selected from Ca, Mg, Sr, Ba, Ti, and Sc 有权
    具有含有硼和选自Ca，Mg，Sr，Ba，Ti和Sc的元素的中间氧化物层的磁阻效应元件

    公开(公告)号：US07920361B2

    公开(公告)日：2011-04-05

    申请号：US11844069

    申请日：2007-08-23

    申请人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

    发明人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC分类号： G11B5/39

    CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F41/307 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： It is made possible to provide a magnetoresistive effect element that can reverse magnetization direction with a low current, having low areal resistance (RA) and a high TMR ratio. A magnetoresistive effect element includes: a film stack that includes a magnetization free layer including a magnetic layer in which magnetization direction is changeable, a magnetization pinned layer including a magnetic layer in which magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, the intermediate layer being an oxide containing boron (B) and an element selected from the group consisting of Ca, Mg, Sr, Ba, Ti, and Sc. Current is applied bidirectionally between the magnetization pinned layer and the magnetization free layer through the intermediate layer, so that the magnetization of the magnetization free layer is reversible.

    摘要翻译： 可以提供具有低电流（RA）和高TMR比的低电流来反向磁化方向的磁阻效应元件。 磁阻效应元件包括：膜堆叠，其包括磁化自由层，其包括其中磁化方向可变的磁性层，包括其中磁化方向被钉扎的磁性层的磁化固定层，以及设置在磁化自由度之间的中间层 层和磁化固定层，中间层是含有硼（B）的氧化物和选自Ca，Mg，Sr，Ba，Ti和Sc的元素。 通过中间层在磁化钉扎层和磁化自由层之间双向施加电流，使得无磁化层的磁化是可逆的。

    Magnetoresistive effect element and magnetic memory
    45.
    发明授权
    Magnetoresistive effect element and magnetic memory 有权
    磁阻效应元件和磁存储器

    公开(公告)号：US08750029B2

    公开(公告)日：2014-06-10

    申请号：US13233420

    申请日：2011-09-15

    申请人： Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda

    发明人： Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda

    IPC分类号： G11C11/15 ,  H01L43/08

    CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08

    摘要： According to one embodiment, a magnetoresistive effect element includes a recording layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and a variable orientation of magnetization, a reference layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and an invariable orientation of magnetization, a nonmagnetic layer between the recording layer and the reference layer, a first underlayer on a side of the recoding layer opposite to a side on which the nonmagnetic layer is provided, and a second underlayer between the recording layer and the first underlayer. The second underlayer is a Pd film including a concentration of 3×1015 atms/cm2.

    摘要翻译： 根据一个实施例，磁阻效应元件包括记录层，其包括对膜表面具有垂直磁各向异性的铁磁材料和磁化的可变取向，包括具有垂直磁性各向异性的铁磁材料的参考层和膜表面的不变取向 磁化，记录层和参考层之间的非磁性层，与记录层和第一底层之间的第二底层与编码层的与设置非磁性层的一侧相反的一侧的第一底层。 第二底层是包含浓度为3×1015atms / cm 2的Pd膜。

    Magnetoresistance effect element and magnetoresistive random access memory using the same
    47.
    发明授权
    Magnetoresistance effect element and magnetoresistive random access memory using the same 有权
    磁阻效应元件和使用其的磁阻随机存取存储器

    公开(公告)号：US07924607B2

    公开(公告)日：2011-04-12

    申请号：US12047749

    申请日：2008-03-13

    申请人： Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

    发明人： Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC分类号： G11C11/00

    CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L27/228 ,  Y10S977/935

    摘要： A magnetoresistive effect element includes a first magnetic layer, a second magnetic layer, and a first spacer layer. The first magnetic layer has an invariable magnetization direction. The second magnetic layer has a variable magnetization direction, and contains at least one element selected from Fe, Co, and Ni, at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from V, Cr, and Mn. The spacer layer is formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material. A bidirectional electric current flowing through the first magnetic layer, the spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.

    摘要翻译： 磁阻效应元件包括第一磁性层，第二磁性层和第一间隔层。 第一磁性层具有不变的磁化方向。 第二磁性层具有可变的磁化方向，并且包含选自Fe，Co和Ni中的至少一种元素，选自Ru，Rh，Pd，Ag，Re，Os，Ir，Pt和Au中的至少一种元素， 和选自V，Cr和Mn中的至少一种元素。 间隔层形成在第一磁性层和第二磁性层之间，由非磁性材料制成。 流过第一磁性层，间隔层和第二磁性层的双向电流使得第二磁性层的磁化方向可变。

    MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY USING THE SAME
    48.
    发明申请
    MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY USING THE SAME 有权
    磁阻效应元件和磁阻随机存取存储器

    公开(公告)号：US20080253174A1

    公开(公告)日：2008-10-16

    申请号：US12047749

    申请日：2008-03-13

    申请人： Masatoshi YOSHIKAWA ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

    发明人： Masatoshi YOSHIKAWA ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC分类号： G11C11/00 ,  H01L29/82

    CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L27/228 ,  Y10S977/935

    摘要： A magnetoresistive effect element includes a first magnetic layer, a second magnetic layer, and a first spacer layer. The first magnetic layer has an invariable magnetization direction. The second magnetic layer has a variable magnetization direction, and contains at least one element selected from Fe, Co, and Ni, at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from V, Cr, and Mn. The spacer layer is formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material. A bidirectional electric current flowing through the first magnetic layer, the spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.

    摘要翻译： 磁阻效应元件包括第一磁性层，第二磁性层和第一间隔层。 第一磁性层具有不变的磁化方向。 第二磁性层具有可变的磁化方向，并且包含选自Fe，Co和Ni中的至少一种元素，选自Ru，Rh，Pd，Ag，Re，Os，Ir，Pt和Au中的至少一种元素， 和选自V，Cr和Mn中的至少一种元素。 间隔层形成在第一磁性层和第二磁性层之间，由非磁性材料制成。 流过第一磁性层，间隔层和第二磁性层的双向电流使得第二磁性层的磁化方向可变。

    Magnetoresistive element including a nitrogen-containing buffer layer
    49.
    发明授权
    Magnetoresistive element including a nitrogen-containing buffer layer 有权
    磁阻元件包括含氮缓冲层

    公开(公告)号：US09165585B2

    公开(公告)日：2015-10-20

    申请号：US13235237

    申请日：2011-09-16

    申请人： Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Kenji Noma ,  Hiroaki Yoda

    发明人： Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Kenji Noma ,  Hiroaki Yoda

    IPC分类号： G11C11/02 ,  G11B5/66 ,  G01R33/09 ,  H01F10/30 ,  G11C11/16

    CPC分类号： H01L43/02 ,  G01R33/091 ,  G01R33/093 ,  G11B5/66 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/30 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.

    摘要翻译： 根据一个实施例，磁阻元件包括具有可变磁化方向的记录层，具有不变磁化方向的参考层，设置在记录层和参考层之间的中间层，以及设置在记录层的表面上的第一缓冲层 该记录层与设置有中间层的记录层的表面相对。 记录层包括设置在中间层的侧面并且包含CoFe作为主要成分的第一磁性层和设置在第一缓冲层的侧面并且包含CoFe作为主要成分的第二磁性层， 第一磁性层中的Fe浓度高于第二磁性层中的Fe浓度。 第一缓冲层包含氮化合物。