公开(公告)号：US20190131196A1

公开(公告)日：2019-05-02

申请号：US15800042

申请日：2017-10-31

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Daniel Lee Revier

IPC: H01L23/28 ,  H01P3/16 ,  H01P11/00 ,  H01P5/08

CPC classification number: G02B6/1225 ,  G02B2006/1213 ,  H01L23/28 ,  H01P1/2005 ,  H01P3/16 ,  H01P5/087 ,  H01P11/006 ,  H01Q1/2283

Abstract: An encapsulated integrated circuit package is provided that includes an integrated circuit (IC) die. A radio frequency (RF) circuit on the IC die is operable to send and/or receive an RF signal having a selected frequency. Encapsulation material encapsulates the IC die. A photonic waveguide couples to the RF circuit and extends to an external surface of the encapsulated IC. The photonic waveguide may be formed by a photonic bandgap structure within the encapsulation material. A socket may be included with the encapsulated package that is coupled to an end of the photonic waveguide opposite the RF circuit.

公开(公告)号：US10170384B2

公开(公告)日：2019-01-01

申请号：US15620361

申请日：2017-06-12

Applicant: Texas Instruments Incorporated

Inventor： Daniel Lee Revier ,  Benjamin Stassen Cook

IPC: H01L33/58 ,  H01L23/29 ,  G06F17/50 ,  H01L23/31 ,  H01L23/552 ,  H01L21/56 ,  H01L21/67

Abstract: Methods and apparatus providing a graded package for a semiconductor are disclosed. An example apparatus includes a die; and a graded package encapsulating the die, the graded package including a material that is spatially varied from a first location of the graded package to a second location of the graded package.

公开(公告)号：US20180304318A1

公开(公告)日：2018-10-25

申请号：US15492433

申请日：2017-04-20

Applicant: Texas Instruments Incorporated

Inventor： Daniel Lee Revier ,  Benjamin Stassen Cook ,  David Patrick Magee ,  Stephen John Fedigan

IPC: B08B7/02 ,  B60S1/56

Abstract: Methods and apparatus for surface wetting control are disclosed. In certain described examples, an apparatus can expel fluid from a droplet on a surface using a transducer mechanically coupled to the surface. A first area of the surface can have a first wettability for the fluid, and a second area of the surface can have a second wettability for the fluid. The first wettability of the first area of the surface can be greater than the second wettability of the second area of the surface. The first area and the second area can be arranged in a patterned arrangement.

公开(公告)号：US12042829B2

公开(公告)日：2024-07-23

申请号：US17020625

申请日：2020-09-14

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Daniel Lee Revier ,  Benjamin Stassen Cook ,  David Patrick Magee ,  Stephen John Fedigan

IPC: B08B7/02 ,  F26B5/02 ,  G02B27/00

CPC classification number: B08B7/028 ,  G02B27/00 ,  G02B27/0006 ,  F26B5/02

Abstract: For surface wetting control, an apparatus can expel fluid from a droplet on a surface using a transducer mechanically coupled to the surface. A first area of the surface can have a first wettability for the fluid, and a second area of the surface can have a second wettability for the fluid. The first wettability of the first area of the surface can be greater than the second wettability of the second area of the surface. The first area and the second area can have a patterned arrangement.

公开(公告)号：US20240153841A1

公开(公告)日：2024-05-09

申请号：US18544590

申请日：2023-12-19

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Nazila Dadvand ,  Archana Venugopal ,  Daniel Lee Revier

IPC: H01L23/373 ,  H01L21/3205 ,  H01L21/683 ,  H01L21/78 ,  H01L23/532

CPC classification number: H01L23/373 ,  H01L21/32051 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/53209

Abstract: In described examples, a method comprises forming a patterned region on a first surface of the semiconductor substrate. The method also comprises forming circuitry in the patterned region. The method further comprises forming a metallic layer on a second surface of the semiconductor substrate, in which the second surface opposes the first surface; and forming a carbon layer on the metallic layer.

公开(公告)号：US20240145526A1

公开(公告)日：2024-05-02

申请号：US18404496

申请日：2024-01-04

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Daniel Lee Revier

IPC: H01F17/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/66

CPC classification number: H01L28/10 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/66 ,  H01L2223/6677

Abstract: In described examples, an integrated circuit comprises: a substrate; a semiconductor die on the substrate; and a device on the substrate and electrically coupled to the semiconductor die, the device including a polymer structure coated with a metal.

公开(公告)号：US20240109247A1

公开(公告)日：2024-04-04

申请号：US18527663

申请日：2023-12-04

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Daniel Lee Revier ,  Sean Ping Chang ,  Benjamin Stassen Cook

IPC: B29C64/165 ,  B22F10/00 ,  B22F10/14 ,  B22F12/37 ,  B22F12/53 ,  B22F12/55 ,  B22F12/57 ,  B28B1/00 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y70/00 ,  B33Y80/00 ,  H01L21/02 ,  H01L21/288 ,  H01L21/67

CPC classification number: B29C64/165 ,  B22F10/00 ,  B22F10/14 ,  B22F12/37 ,  B22F12/53 ,  B22F12/55 ,  B22F12/57 ,  B28B1/001 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y70/00 ,  B33Y80/00 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02288 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02623 ,  H01L21/288 ,  H01L21/6715 ,  B29L2031/34

Abstract: A layer of additive material is formed in a circular printing area on a substrate using additive sources distributed across a printing zone. The additive sources form predetermined discrete amounts of the additive material. The substrate and the additive sources are rotated with respect to each other around a center of rotation, so that a pattern of the additive material is formed in a circular printing area on the substrate. Each additive source receives actuation waveforms at an actuation frequency that is proportional to a distance of the additive source from the center of rotation. The actuation waveforms include formation signals, with a maximum of one formation signal in each cycle of the actuation frequency. The formation signals result in the additive sources forming the predetermined discrete amounts of the additive material on the substrate.

公开(公告)号：US11487206B2

公开(公告)日：2022-11-01

申请号：US16729919

申请日：2019-12-30

Applicant: Texas Instruments Incorporated

Inventor： Daniel Lee Revier ,  Sean Ping Chang ,  Benjamin Stassen Cook ,  Scott Robert Summerfelt

IPC: G03F7/16 ,  G03F7/30 ,  H01L23/00 ,  H01L21/266 ,  H01L21/308 ,  H01L21/027 ,  G03F7/095

Abstract: A microelectronic device is formed by dispensing discrete amounts of a mixture of photoresist resin and solvents from droplet-on-demand sites onto a wafer to form a first photoresist sublayer, while the wafer is at a first temperature which allows the photoresist resin to attain less than 10 percent thickness non-uniformity. The wafer moves under the droplet-on-demand sites in a first direction to form the first photoresist sublayer. A portion of the solvents in the first photoresist sublayer is removed. A second photoresist sublayer is formed on the first photoresist sublayer using the droplet-on-demand sites while the wafer is at a second temperature to attain less than 10 percent thickness non-uniformity in the combined first and second photoresist sublayers. The wafer moves under the droplet-on-demand sites in a second direction for the second photoresist sublayer, opposite from the first direction.

公开(公告)号：US20210200094A1

公开(公告)日：2021-07-01

申请号：US16729919

申请日：2019-12-30

Applicant: Texas Instruments Incorporated

Inventor： Daniel Lee Revier ,  Sean Ping Chang ,  Benjamin Stassen Cook ,  Scott Robert Summerfelt

IPC: G03F7/16 ,  G03F7/30 ,  H01L23/00 ,  H01L21/266 ,  H01L21/308 ,  H01L21/027

Abstract: A microelectronic device is formed by dispensing discrete amounts of a mixture of photoresist resin and solvents from droplet-on-demand sites onto a wafer to form a first photoresist sublayer, while the wafer is at a first temperature which allows the photoresist resin to attain less than 10 percent thickness non-uniformity. The wafer moves under the droplet-on-demand sites in a first direction to form the first photoresist sublayer. A portion of the solvents in the first photoresist sublayer is removed. A second photoresist sublayer is formed on the first photoresist sublayer using the droplet-on-demand sites while the wafer is at a second temperature to attain less than 10 percent thickness non-uniformity in the combined first and second photoresist sublayers. The wafer moves under the droplet-on-demand sites in a second direction for the second photoresist sublayer, opposite from the first direction.

公开(公告)号：US11031364B2

公开(公告)日：2021-06-08

申请号：US15914761

申请日：2018-03-07

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Daniel Lee Revier ,  Sadia Naseem ,  Mahmud Halim Chowdhury

IPC: H01L23/00

Abstract: In described examples, a microelectronic device includes a microelectronic die with a die attach surface. The microelectronic device further includes a nanoparticle layer coupled to the die attach surface. The nanoparticle layer may be in direct contact with the die attach surface, or may be coupled to the die attach surface through an intermediate layer, such as an adhesion layer or a contact metal layer. The nanoparticle layer includes nanoparticles having adjacent nanoparticles adhered to each other. The microelectronic die is attached to a package substrate by a die attach material. The die attach material extends into the nanoparticle layer and contacts at least a portion of the nanoparticles.