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    Semiconductor device with passivated magnetic concentrator
    42.
    发明授权
    Semiconductor device with passivated magnetic concentrator 有权

    公开(公告)号：US11864471B2

    公开(公告)日：2024-01-02

    申请号：US17514820

    申请日：2021-10-29

    Applicant: Texas Instruments Incorporated

    Inventor： Rafael Jose Lizares Guevara ,  Dok Won Lee ,  Kashyap Mohan

    IPC: G01R33/00 ,  H10N52/80 ,  G01R33/07 ,  H10N50/85 ,  H10N52/01 ,  H10N52/00

    CPC classification number: H10N52/80 ,  G01R33/0011 ,  G01R33/07 ,  H10N50/85 ,  H10N52/01 ,  H10N52/101

    Abstract: A described example includes: a semiconductor die including a Hall sensor arranged in a first plane that is parallel to a device side surface of the semiconductor die; a passivated magnetic concentrator including a magnetic alloy layer formed over the device side surface of the semiconductor die, the upper surface of the magnetic alloy layer covered by a layer of polymer material; a backside surface of the semiconductor die opposite the device side surface mounted to a die side surface of a die pad on a package substrate, the semiconductor die having bond pads on the device side surface spaced from the magnetic concentrator; electrical connections coupling the bond pads of the semiconductor die to leads of the package substrate; and mold compound covering the magnetic concentrator, the semiconductor die, the electrical connections, a portion of the leads, and the die side surface of the die pad.

    Thin Film Anisotropic Magnetoresistor Device and Formation
    43.
    发明申请
    Thin Film Anisotropic Magnetoresistor Device and Formation 有权

    公开(公告)号：US20230096573A1

    公开(公告)日：2023-03-30

    申请号：US17487877

    申请日：2021-09-28

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Fuchao Wang ,  Christopher Eric Brannon ,  William David French ,  Dok Won Lee

    IPC: H01L43/12 ,  H01L43/02 ,  H01L21/306 ,  G01R33/09

    Abstract: Apparatus, and their methods of manufacture, including an integrated circuit device having metallization layers for interconnecting underlying electronic devices. Contacts contact conductors of an uppermost one of the metallization layers. A planarized first dielectric layer covers the contacts and the uppermost one of the metallization layers. An anisotropic magnetoresistive (AMR) stack is on the first dielectric layer between vertically aligned portions of an etch stop layer formed on the first dielectric layer and a second dielectric layer formed on the etch stop layer. Vias extend through the first dielectric layer to electrically connect the AMR stack and the contacts. A chemical-mechanical planarization (CMP) stop layer is on the AMR stack. A third dielectric layer is on the CMP stop layer. A passivation layer contacts the second dielectric layer portions, the third dielectric layer, and each opposing end of the AMR stack and the CMP stop layer.

    STRUCTURE AND DESIGN OF AN ANISOTROPIC MAGNETORESISTIVE ANGULAR SENSOR
    45.
    发明申请
    STRUCTURE AND DESIGN OF AN ANISOTROPIC MAGNETORESISTIVE ANGULAR SENSOR 审中-公开

    公开(公告)号：US20180202837A1

    公开(公告)日：2018-07-19

    申请号：US15407990

    申请日：2017-01-17

    Applicant: Texas Instruments Incorporated

    Inventor： William David French ,  Dok Won Lee

    IPC: G01D5/16

    CPC classification number: G01D5/145

    Abstract: An integrated AMR angular sensor includes a first sensor resistor and a second sensor resistor. The first sensor resistor and the second sensor resistor each has a plurality of magnetoresistive segments containing magnetoresistive material that are electrically coupled in series. The magnetoresistive segments of each sensor resistor are parallel/anti-parallel to each other. The magnetoresistive segments of the second sensor resistor are perpendicular to the magnetoresistive segments of the first sensor resistor. The first magnetoresistive segments are divided into a first group and a second group, which are disposed in a balanced distribution relative to a sensor central point of the integrated AMR angular sensor. Similarly, the second magnetoresistive segments are divided into a first group and a second group, which are disposed in a balanced distribution relative to the sensor central point.

    Fluxgate device with low fluxgate noise
    49.
    发明授权
    Fluxgate device with low fluxgate noise 有权
    磁通门装置磁通门噪声低

    公开(公告)号：US09577185B1

    公开(公告)日：2017-02-21

    申请号：US15141003

    申请日：2016-04-28

    Applicant: Texas Instruments Incorporated

    Inventor： Dok Won Lee ,  Sudtida Lavangkul ,  Erika Lynn Mazotti ,  William David French

    IPC: H01L27/02 ,  H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L23/528 ,  H01L23/522 ,  G01R33/04

    CPC classification number: H01F27/346 ,  G01R33/0029 ,  G01R33/04 ,  H01F27/24 ,  H01F27/28 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12

    Abstract: An integrated fluxgate device, which includes a magnetic core, an excitation coil, and a sense coil. The magnetic core has a longitudinal edge and a terminal edge. The excitation coil coils around the longitudinal edge of the magnetic core, and the excitation coil has a first number of excitation coil members within a proximity of the terminal edge. The sense coil coils around the longitudinal edge of the magnetic core, and the sense coil has a second number of sense coil members within the proximity of the terminal edge. For reducing fluxgate noise, the second number of sense coil members may be less than the first number of excitation coil members within the proximity of the terminal edge.

    Abstract translation: 集成磁通门装置，其包括磁芯，励磁线圈和感测线圈。 磁芯具有纵向边缘和末端边缘。 励磁线圈围绕磁芯的纵向边缘缠绕，并且励磁线圈在端子边缘附近具有第一数量的励磁线圈构件。 感测线圈围绕磁芯的纵向边缘缠绕，并且感测线圈在端子边缘附近具有第二数量的感测线圈构件。 为了减小磁通门噪声，第二数量的感测线圈构件可以小于在端子边缘附近的第一数量的励磁线圈构件。

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