摘要:
A nonwoven fabric that is not easily damaged during use is provided. A fiber web supported by a predetermined supporting member from the lower face side is blown with fluid, mainly composed of gas, from the upper face side of the fiber web to move fibers that constitute the fiber web, thereby forming at least a plurality of open areas. The nonwoven fabric includes a plurality of open areas continuously formed along a predetermined direction with a predetermined interval and a plurality of joining portions, each of which are formed between the open areas adjacent to each other in a predetermined direction.
摘要:
A display device and a driving method thereof are provided, which reduces an instantaneous current generated with a charge and discharge of source signal lines and further reduces a load to a power supply line. According to the invention, source signal lines are divided into the first to the n-th groups so as to be charged or discharged according to the first to the n-th latch pulses which are inputted at different timing. Since the number of the source signal lines which start to be charged or discharged at the same time is reduced, an instantaneous current generated with the charge and discharge can be reduced, and a load to the power supply line can be reduced as well.
摘要:
A heating/cooling method, a manufacturing method of an image displaying apparatus, a heating/cooling apparatus, and a heating/cooling processing apparatus, in which the heating and cooling of a substrate can be executed at a high speed are provided.
摘要:
An absorbent article comprising nonwoven fabric having convex and concave surfaces, and that allows liquid such as excreta and the like to permeate quickly. A sanitary napkin has a plurality of raised ridge portions and groove portions in a top sheet member. The fiber density of the side edge portions of each of the plurality of raised ridge portions in the thickness direction of the nonwoven fabric is substantially uniform, and is higher than the average fiber density in the raised ridge portions. The fiber density of the central portion between both the side edge portions of each of the plurality of raised ridge portions is substantially uniform in the thickness direction of the nonwoven fabric, and is lower than the average fiber density in the raised ridge portions.
摘要:
The present invention provides a nonwoven fabric of which at least one of fiber orientation, fiber density, and basis weight is adjusted, and in which at least one of a predetermined groove portion, an opening, and a protrusion is formed, a manufacturing method for the nonwoven fabric, and a nonwoven fabric manufacturing apparatus. The nonwoven fabric manufacturing apparatus of the present invention manufactures a nonwoven fabric of which at least one of fiber orientation, fiber density, and basis weight is adjusted, or in which at least one of a predetermined groove portion, an opening, and a protrusion is formed by blowing fluid mainly containing gas onto a fiber web which is formed in a sheet shape, and which is in a state where at least a portion of the fibers constituting the fiber aggregate has a degree of freedom.
摘要:
In an electron source manufacturing apparatus, the quantity of heat generated from an electron source substrate is measured. A temperature of a support member for the electron source substrate is controlled based on the measured quantity of heat generated. A variation in performances of electron source substrates is suppressed, which increase their life.
摘要:
A control circuit board is opposed to an outer surface of a case in the form of a rectangular box, and an connector cable, which has connector terminals connectable with an external device, extends from the circuit board. The control circuit board has a plurality of first connector pads with a first property and a plurality of second connector pads with a second property different from the first property, the first and second connector pads being arranged side by side on the control circuit board. The connector cable has a proximal end portion connected to at least one type, among the first and second connector pads, and the connector terminals including a plurality of connector terminals connecting with the at least one type of connector pads to which the proximal end portion is connected.
摘要:
A probe for applying a voltage to lines provided on a substrate comprises (a) a conductive sheet, the conductive sheet including a mesh sheet in which linear members are woven into a mesh and a conductive material which coats the mesh sheet, (b) an elastic member for pressing the conductive sheet against the lines, and (c) a holding member for holding the conductive sheet and the elastic member together. The probe has improved electrical connectivity and durability, and achieves a reduction in size and facilitation of operations of an apparatus for manufacturing an electron source.
摘要:
The present invention provides a CZ silicon wafer, wherein the wafer includes rod-like void defects and/or plate-like void defects inside thereof, and a CZ silicon wafer, wherein the silicon wafer includes void defects inside the wafer, a maximum value of a ratio between long side length L1 and short side length L2 (L1/L2) in an optional rectangle circumscribed the void defect image projected on an optional {110} plane is 2.5 or more, and the silicon wafer including rod-like void defects and/or plate-like void defects inside the wafer, wherein a void defect density of the silicon wafer at a depth of from the wafer surface to at least 0.5 &mgr;m after the heat treatment is ½ or less than that of inside the wafer. According to this, the silicon wafer, which is suitable for expanding reducing effect of void defects by heat treatment up to a deeper region, can be obtained.
摘要:
A silicon single crystal wafer for epitaxial growth grown by the CZ method, which is doped with nitrogen and has a V-rich region over its entire plane, or doped with nitrogen, has an OSF region in its plane, and shows an LEP density of 20/cm2 or less or an OSF density of 1×104/cm2 or less in the OSF region, epitaxial wafer utilizing the substrate, as well as methods for producing them and method for evaluating a substrate suitable for an epitaxial wafer. There are provided a substrate for an epitaxial wafer that suppresses crystal defects to be generated in an epitaxial layer when epitaxial growth is performed on a CZ silicon single crystal wafer doped with nitrogen and also has superior IG ability, epitaxial wafer utilizing the substrate, as well as methods for producing them and method for evaluating a substrate suitable for an epitaxial wafer.
摘要翻译:通过CZ法生长的用于外延生长的硅单晶晶片,其掺杂有氮并在其整个平面上具有富V区或掺杂氮,在其平面中具有OSF区,并且显示出LEP密度 在OSF区域中使用20 / cm 2以下的OSF密度或1×10 4 / cm 2以下的OSF密度,利用该基板的外延晶片及其制造方法以及评价适用于外延晶片的基板的方法。 提供了一种用于外延晶片的衬底,其抑制在掺杂氮的CZ硅单晶晶片上进行外延生长时外延层中产生的晶体缺陷,并且还具有优异的IG能力,以及利用衬底的外延晶片 作为其制造方法和评价适用于外延晶片的基板的方法。