Nonwoven fabric
    41.
    发明授权

    公开(公告)号:US07803448B2

    公开(公告)日:2010-09-28

    申请号:US11755376

    申请日:2007-05-30

    IPC分类号: B32B3/10

    摘要: A nonwoven fabric that is not easily damaged during use is provided. A fiber web supported by a predetermined supporting member from the lower face side is blown with fluid, mainly composed of gas, from the upper face side of the fiber web to move fibers that constitute the fiber web, thereby forming at least a plurality of open areas. The nonwoven fabric includes a plurality of open areas continuously formed along a predetermined direction with a predetermined interval and a plurality of joining portions, each of which are formed between the open areas adjacent to each other in a predetermined direction.

    Display device and method thereof
    42.
    发明授权
    Display device and method thereof 有权
    显示装置及其方法

    公开(公告)号:US07710379B2

    公开(公告)日:2010-05-04

    申请号:US10928272

    申请日:2004-08-30

    IPC分类号: G09G3/36

    摘要: A display device and a driving method thereof are provided, which reduces an instantaneous current generated with a charge and discharge of source signal lines and further reduces a load to a power supply line. According to the invention, source signal lines are divided into the first to the n-th groups so as to be charged or discharged according to the first to the n-th latch pulses which are inputted at different timing. Since the number of the source signal lines which start to be charged or discharged at the same time is reduced, an instantaneous current generated with the charge and discharge can be reduced, and a load to the power supply line can be reduced as well.

    摘要翻译: 提供了一种显示装置及其驱动方法,其减少了源极信号线的充放电产生的瞬时电流,并进一步降低了对电源线的负载。 根据本发明,源信号线被划分为第一至第n组,以便根据在不同定时输入的第一至第n个锁存脉冲进行充电或放电。 由于同时开始充电或放电的源极信号线的数量减少,所以可以减少由充放电产生的瞬时电流,并且也可以减小对电源线的负担。

    ABSORBENT ARTICLE
    44.
    发明申请
    ABSORBENT ARTICLE 有权
    吸收品

    公开(公告)号:US20080045915A1

    公开(公告)日:2008-02-21

    申请号:US11766867

    申请日:2007-06-22

    IPC分类号: A61F13/15

    摘要: An absorbent article comprising nonwoven fabric having convex and concave surfaces, and that allows liquid such as excreta and the like to permeate quickly. A sanitary napkin has a plurality of raised ridge portions and groove portions in a top sheet member. The fiber density of the side edge portions of each of the plurality of raised ridge portions in the thickness direction of the nonwoven fabric is substantially uniform, and is higher than the average fiber density in the raised ridge portions. The fiber density of the central portion between both the side edge portions of each of the plurality of raised ridge portions is substantially uniform in the thickness direction of the nonwoven fabric, and is lower than the average fiber density in the raised ridge portions.

    摘要翻译: 一种吸收性物品,其特征在于,所述吸收性物品包括具有凸表面和凹面的非织造织物,并允许诸如排泄物等的液体迅速渗透。 卫生巾在顶片部件中具有多个凸脊部和槽部。 无纺布的厚度方向上的多个凸状部的侧缘部的纤维密度基本均匀,高于凸状部的平均纤维密度。 多个凸脊部的两个侧缘部之间的中央部的纤维密度在无纺布的厚度方向上基本均匀,并且低于凸状部的平均纤维密度。

    NONWOVEN FABRIC, NONWOVEN FABRIC MANUFACTURING METHOD, AND NONWOVEN FABRIC MANUFACTURING APPARATUS
    45.
    发明申请
    NONWOVEN FABRIC, NONWOVEN FABRIC MANUFACTURING METHOD, AND NONWOVEN FABRIC MANUFACTURING APPARATUS 有权
    非织造布,非织造织物制造方法和非织造织物制造装置(NONWOVEN FABRIC MANUFACTURING APPARATUS

    公开(公告)号:US20080010795A1

    公开(公告)日:2008-01-17

    申请号:US11764899

    申请日:2007-06-19

    摘要: The present invention provides a nonwoven fabric of which at least one of fiber orientation, fiber density, and basis weight is adjusted, and in which at least one of a predetermined groove portion, an opening, and a protrusion is formed, a manufacturing method for the nonwoven fabric, and a nonwoven fabric manufacturing apparatus. The nonwoven fabric manufacturing apparatus of the present invention manufactures a nonwoven fabric of which at least one of fiber orientation, fiber density, and basis weight is adjusted, or in which at least one of a predetermined groove portion, an opening, and a protrusion is formed by blowing fluid mainly containing gas onto a fiber web which is formed in a sheet shape, and which is in a state where at least a portion of the fibers constituting the fiber aggregate has a degree of freedom.

    摘要翻译: 本发明提供了一种无纺布,其中纤维取向性,纤维密度和单位面积重量中的至少一种被调节,并且其中形成有预定的凹槽部分,开口和突起中的至少一种的制造方法 无纺布,无纺布制造装置。 本发明的无纺布制造装置制造了调节纤维取向,纤维密度和单位面积重量中的至少一种的规定的无纺布,或者规定的槽部,开口部和突起部中的至少一个为 通过将主要含有气体的流体吹送到形成为片状的纤维网上,并且处于其中构成纤维聚集体的至少一部分纤维具有自由度的状态而形成。

    Disk device
    47.
    发明申请
    Disk device 失效
    磁盘设备

    公开(公告)号:US20050264924A1

    公开(公告)日:2005-12-01

    申请号:US11138395

    申请日:2005-05-27

    摘要: A control circuit board is opposed to an outer surface of a case in the form of a rectangular box, and an connector cable, which has connector terminals connectable with an external device, extends from the circuit board. The control circuit board has a plurality of first connector pads with a first property and a plurality of second connector pads with a second property different from the first property, the first and second connector pads being arranged side by side on the control circuit board. The connector cable has a proximal end portion connected to at least one type, among the first and second connector pads, and the connector terminals including a plurality of connector terminals connecting with the at least one type of connector pads to which the proximal end portion is connected.

    摘要翻译: 控制电路板与矩形盒形式的外壳的外表面相对,并且具有可与外部装置连接的连接器端子的连接器电缆从电路板延伸。 控制电路板具有多个具有第一特性的第一连接器焊盘和具有与第一特性不同的第二特性的多个第二连接器焊盘,第一和第二连接器焊盘并排布置在控制电路板上。 所述连接器电缆具有连接到所述第一和第二连接器焊盘中的至少一种类型的近端部分,并且所述连接器端子包括多个连接器端子,所述连接器端子与所述至少一种类型的连接器焊盘相连,所述连接器端子的近端部分 连接的。

    Silicon wafer
    49.
    发明授权
    Silicon wafer 有权
    硅晶片

    公开(公告)号:US06599603B1

    公开(公告)日:2003-07-29

    申请号:US09673955

    申请日:2000-10-24

    IPC分类号: C30B2906

    摘要: The present invention provides a CZ silicon wafer, wherein the wafer includes rod-like void defects and/or plate-like void defects inside thereof, and a CZ silicon wafer, wherein the silicon wafer includes void defects inside the wafer, a maximum value of a ratio between long side length L1 and short side length L2 (L1/L2) in an optional rectangle circumscribed the void defect image projected on an optional {110} plane is 2.5 or more, and the silicon wafer including rod-like void defects and/or plate-like void defects inside the wafer, wherein a void defect density of the silicon wafer at a depth of from the wafer surface to at least 0.5 &mgr;m after the heat treatment is ½ or less than that of inside the wafer. According to this, the silicon wafer, which is suitable for expanding reducing effect of void defects by heat treatment up to a deeper region, can be obtained.

    摘要翻译: 本发明提供了一种CZ硅晶片,其中晶片在其内部包括棒状空隙缺陷和/或板状空隙缺陷,以及CZ硅晶片,其中硅晶片包括晶片内的空隙,其最大值 在可选择的{110}平面上投影的空隙缺陷图像的任意矩形中的长边长L1和短边长L2之间的比率(L1 / L2)为2.5以上,硅晶片包括棒状空隙, /或晶片内的板状空隙缺陷,其中在晶片表面的深度处的硅晶片的空隙缺陷密度在热处理之后至少为0.5微米的半孔缺陷密度为晶片内部的1/2以下。 据此,可以获得适合于通过热处理直到更深的区域来减少空隙缺陷的效果的硅晶片。

    Silicon single crystal wafer for epitaxial wafer, epitaxial wafer, and methods for producing the same and evaluating the same
    50.
    发明授权
    Silicon single crystal wafer for epitaxial wafer, epitaxial wafer, and methods for producing the same and evaluating the same 有权
    用于外延晶片的硅单晶晶片,外延晶片及其制造方法及其评估

    公开(公告)号:US06548035B1

    公开(公告)日:2003-04-15

    申请号:US09868058

    申请日:2001-06-14

    IPC分类号: A01N4340

    摘要: A silicon single crystal wafer for epitaxial growth grown by the CZ method, which is doped with nitrogen and has a V-rich region over its entire plane, or doped with nitrogen, has an OSF region in its plane, and shows an LEP density of 20/cm2 or less or an OSF density of 1×104/cm2 or less in the OSF region, epitaxial wafer utilizing the substrate, as well as methods for producing them and method for evaluating a substrate suitable for an epitaxial wafer. There are provided a substrate for an epitaxial wafer that suppresses crystal defects to be generated in an epitaxial layer when epitaxial growth is performed on a CZ silicon single crystal wafer doped with nitrogen and also has superior IG ability, epitaxial wafer utilizing the substrate, as well as methods for producing them and method for evaluating a substrate suitable for an epitaxial wafer.

    摘要翻译: 通过CZ法生长的用于外延生长的硅单晶晶片,其掺杂有氮并在其整个平面上具有富V区或掺杂氮,在其平面中具有OSF区,并且显示出LEP密度 在OSF区域中使用20 / cm 2以下的OSF密度或1×10 4 / cm 2以下的OSF密度,利用该基板的外延晶片及其制造方法以及评价适用于外延晶片的基板的方法。 提供了一种用于外延晶片的衬底,其抑制在掺杂氮的CZ硅单晶晶片上进行外延生长时外延层中产生的晶体缺陷,并且还具有优异的IG能力,以及利用衬底的外延晶片 作为其制造方法和评价适用于外延晶片的基板的方法。