公开(公告)号：US20220037387A1

公开(公告)日：2022-02-03

申请号：US16942109

申请日：2020-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsun-Kai Tsao ,  Jiech-Fun Lu

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to an image sensor structure. The image sensor structure includes a substrate. The substrate includes a first side and a second side opposite the first side. A photodetector extends into the first side of the substrate. An isolation structure comprises a first isolation segment and a second isolation segment that extend through the substrate. The first isolation segment and the second isolation segment are respectively on opposite sides of the photodetector and comprise a dielectric. A first metal line is on the first side of the substrate. A dummy contact structure comprises a first dummy segment and a second dummy segment. Both the first dummy segment and the second dummy segment comprise metal and extend from the first metal line to the first isolation segment and the second isolation segment, respectively.

公开(公告)号：US11121162B2

公开(公告)日：2021-09-14

申请号：US16405027

申请日：2019-05-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsun-Kai Tsao ,  Jiech-Fun Lu ,  Shih-Pei Chou ,  Tzu-Ming Wang

IPC: H01L27/146

Abstract: Various embodiments of the present disclosure are directed towards an image sensor including a light pipe structure. A photodetector disposed within a semiconductor substrate. A gate electrode is over the semiconductor substrate and borders the photodetector. An inter-level dielectric (ILD) layer overlies the semiconductor substrate. A conductive contact is disposed within the ILD layer such that a bottom surface of the conductive contact is below a top surface of the gate electrode. The light pipe structure overlies the photodetector such that a bottom surface of the light pipe structure is recessed below a top surface of the conductive contact.

公开(公告)号：US20210233945A1

公开(公告)日：2021-07-29

申请号：US17231223

申请日：2021-04-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Wen Hsu ,  Jiech-Fun Lu ,  Yeur-Luen Tu ,  U-Ting Chen ,  Shu-Ting Tsai ,  Hsiu-Yu Cheng

IPC: H01L27/146

Abstract: A backside illumination (BSI) image sensor and a method of forming the same are provided. A device includes a substrate and a plurality of photosensitive regions in the substrate. The substrate has a first side and a second side opposite to the first side. The device further includes an interconnect structure on the first side of the substrate, and a plurality of recesses on the second side of the substrate. The plurality of recesses extend into a semiconductor material of the substrate.

公开(公告)号：US20210066225A1

公开(公告)日：2021-03-04

申请号：US16558556

申请日：2019-09-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Pei Chou ,  Jiech-Fun Lu

IPC: H01L23/00 ,  H01L27/146

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a bond pad disposed within a semiconductor substrate. The semiconductor substrate has a back-side surface and a front-side surface opposite the back-side surface. An upper surface of the semiconductor substrate is vertically below the back-side surface. The bond pad extends through the semiconductor substrate. The bond pad includes a conductive body over the upper surface of the semiconductor substrate and conductive protrusions extending from above the upper surface to below the front-side surface of the semiconductor substrate. A vertical distance between a top surface of the bond pad and the back-side surface of the semiconductor substrate is less than a height of the conductive protrusions. A first bond pad isolation structure extends through the semiconductor substrate and laterally surrounds the conductive protrusions.

公开(公告)号：US10833115B2

公开(公告)日：2020-11-10

申请号：US16851265

申请日：2020-04-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Han Huang ,  Jiech-Fun Lu ,  Yu-Chun Chen

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.

公开(公告)号：US20200266228A1

公开(公告)日：2020-08-20

申请号：US16851265

申请日：2020-04-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Han Huang ,  Jiech-Fun Lu ,  Yu-Chun Chen

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.

公开(公告)号：US10680024B2

公开(公告)日：2020-06-09

申请号：US15935341

申请日：2018-03-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Han Huang ,  Jiech-Fun Lu ,  Yu-Chun Chen

IPC: H01L31/062 ,  H01L27/146

Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.

公开(公告)号：US10658474B2

公开(公告)日：2020-05-19

申请号：US16103101

申请日：2018-08-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Ta Wu ,  Chia-Shiung Tsai ,  Jiech-Fun Lu ,  Kuo-Hwa Tzeng ,  Shih-Pei Chou ,  Yu-Hung Cheng ,  Yeur-Luen Tu

IPC: H01L29/40 ,  H01L21/762 ,  H01L21/02 ,  H01L29/06 ,  H01L21/324 ,  H01L21/66 ,  H01L21/311

Abstract: Various embodiments of the present application are directed to a method for forming a thin semiconductor-on-insulator (SOI) substrate without implantation radiation and/or plasma damage. In some embodiments, a device layer is epitaxially formed on a sacrificial substrate and an insulator layer is formed on the device layer. The insulator layer may, for example, be formed with a net charge that is negative or neutral. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates. The sacrificial substrate is removed, and the device layer is cyclically thinned until the device layer has a target thickness. Each thinning cycle comprises oxidizing a portion of the device layer and removing oxide resulting from the oxidizing.

公开(公告)号：US10553474B1

公开(公告)日：2020-02-04

申请号：US16139357

申请日：2018-09-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Ta Wu ,  Chia-Shiung Tsai ,  Jiech-Fun Lu ,  Kuan-Liang Liu ,  Shih-Pei Chou ,  Yu-Hung Cheng ,  Yeur-Luen Tu

IPC: H01L21/762 ,  H01L21/3213

Abstract: Various embodiments of the present application are directed towards a method for forming a semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator layer. In some embodiments, the method includes forming an insulator layer covering a handle substrate, and epitaxially forming a device layer on a sacrificial substrate. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates, and the sacrificial substrate is removed. The removal includes performing an etch into the sacrificial substrate until the device layer is reached. Because the device layer is formed by epitaxy and transferred to the handle substrate, the device layer may be formed with a large thickness. Further, because the epitaxy is not affected by the thickness of the insulator layer, the insulator layer may be formed with a large thickness.

公开(公告)号：US20190288027A1

公开(公告)日：2019-09-19

申请号：US16420576

申请日：2019-05-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Chung Su ,  Hung-Wen Hsu ,  Jiech-Fun Lu ,  Shih-Pei Chou

IPC: H01L27/146

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate and an image sensing element disposed within the substrate. The substrate has sidewalls defining a plurality of protrusions over the image sensing element. A first one of the plurality of protrusions including a first sidewall having a first segment. A line that extends along the first segment intersects a second sidewall of the first one of the plurality of protrusions that opposes the first sidewall.