Dielectric porcelain composition for use in electronic devices
    42.
    发明授权
    Dielectric porcelain composition for use in electronic devices 失效
    用于电子设备的介电瓷组合物

    公开(公告)号:US07648935B2

    公开(公告)日:2010-01-19

    申请号:US11993700

    申请日:2005-06-24

    IPC分类号: C04B35/47

    摘要: The invention intends to provide a dielectric porcelain composition for use in electronic devices, which has the dielectric characteristics such that the Qf value is high, the temperature coefficient τf of a resonant frequency is small and a value thereof can be controlled in a wide range in positive and negative directions in the vicinity where the relative dielectric constant ∈r is 39. According to the invention, when, in La—Pr—Al—Ga—Sr—Ti-based oxide dielectric porcelain, contents of the respective elements are limited to be within particular ranges and Sr is partially substituted by Ca, a structure having a (1-x)(La1-yLny)(Al1-zGaz)O3-x(Sr1-mCam)TiO3 solid solution as a main phase, in which a solid solution of Al—Ga—Sr-based oxide and/or a solid solution of Al—Ga-based oxide and a Sr oxide is/are precipitated in a grain boundary thereof, can be obtained, whereby the above-mentioned object can be achieved.

    摘要翻译: 本发明旨在提供一种用于电子器件的电介质瓷组合物,其具有使Qf值高的介电特性,谐振频率的温度系数τf小,其值可以在宽范围内被控制 根据本发明,当在La-Pr-Al-Ga-Sr-Ti系氧化物介电瓷中,各元素的含量限于 在一定范围内,Sr部分被Ca取代,Ca是具有(1-x)(La1-yLny)(Al1-zGaz)O3-x(Sr1-mCam)TiO3固溶体作为主相的结构,其中a 可以获得Al-Ga-Sr系氧化物和/或Al-Ga系氧化物和Sr氧化物的固溶体在其晶界析出的固溶体,由此上述目的可以是 实现了

    Plasma processing method
    45.
    发明授权
    Plasma processing method 有权
    等离子体处理方法

    公开(公告)号:US06914207B2

    公开(公告)日:2005-07-05

    申请号:US10688991

    申请日:2003-10-21

    IPC分类号: H01J37/32 B23K9/00

    CPC分类号: H01J37/32862 H01J37/321

    摘要: In a plasma processing method which comprises supplying a processing gas to a vacuum vessel forming a plasma production part, producing a plasma using an antenna and a Faraday shield which are provided at outer periphery of the vacuum vessel and to which a high-frequency electric power can be applied, and carrying out the processing, a voltage of at least 500 V is applied to the Faraday shield and a sample which is disposed in the vacuum vessel and which is a nonvolatile material as a material to be etched is etched.

    摘要翻译: 在等离子体处理方法中,其包括向形成等离子体生产部件的真空容器供给处理气体,使用设置在真空容器的外周的天线和法拉第屏蔽来制造等离子体,并且将高频电力 并且进行处理时,向法拉第屏蔽件施加至少500V的电压,并且蚀刻设置在真空容器中并且作为待蚀刻材料的非挥发性材料的样品。

    Infrared radiation gas analyzer
    46.
    发明授权
    Infrared radiation gas analyzer 失效
    红外辐射气体分析仪

    公开(公告)号:US4499378A

    公开(公告)日:1985-02-12

    申请号:US473344

    申请日:1983-03-08

    摘要: An infrared radiation gas analyzer for determining the concentration of an ingredient in a sample gas has a sample gas container for containing a sample gas at a temperature at which the ingredient the concentration of which is to be determined will emit infrared radiation in a range characteristic of the ingredient and a window for allowing the infrared radiation to escape from the container. An optical chopper is positioned outside the container for interrupting the radiation escaping from the container. A filter is positioned in the path of the radiation escaping from the container and transmits only radiation in the range. An infrared radiation detector is positioned for receiving the radiation passed by the filter and emitting a signal representative of the radiation received by the detector and which is representative of the concentration of the ingredient the concentration of which is to be determined in the sample gas.

    摘要翻译: 用于确定样品气体中成分浓度的红外辐射气体分析仪具有样品气体容器,该样品气体容器用于在其浓度将被确定的成分将发射红外辐射的温度下容纳样品气体, 该成分和允许红外辐射从容器逸出的窗口。 光学斩波器位于容器外部,用于中断从容器逸出的辐射。 过滤器位于从容器逸出的辐射的路径中,并且仅透射该范围内的辐射。 定位红外辐射检测器用于接收由过滤器通过的辐射,并发出代表由检测器接收的辐射的信号,其代表在样品气体中要确定其浓度的成分的浓度。