公开(公告)号：US4499378A

公开(公告)日：1985-02-12

申请号：US473344

申请日：1983-03-08

申请人： Kimio Miyatake ,  Kozo Ishida ,  Hiroyuki Ebi ,  Takeshi Shimada

发明人： Kimio Miyatake ,  Kozo Ishida ,  Hiroyuki Ebi ,  Takeshi Shimada

IPC分类号： G01N21/31 ,  G01N21/35 ,  G01N21/71 ,  G01J1/00

CPC分类号： G01N21/71 ,  G01N21/3504 ,  G01N21/314 ,  G01N21/35

摘要： An infrared radiation gas analyzer for determining the concentration of an ingredient in a sample gas has a sample gas container for containing a sample gas at a temperature at which the ingredient the concentration of which is to be determined will emit infrared radiation in a range characteristic of the ingredient and a window for allowing the infrared radiation to escape from the container. An optical chopper is positioned outside the container for interrupting the radiation escaping from the container. A filter is positioned in the path of the radiation escaping from the container and transmits only radiation in the range. An infrared radiation detector is positioned for receiving the radiation passed by the filter and emitting a signal representative of the radiation received by the detector and which is representative of the concentration of the ingredient the concentration of which is to be determined in the sample gas.

摘要翻译： 用于确定样品气体中成分浓度的红外辐射气体分析仪具有样品气体容器，该样品气体容器用于在其浓度将被确定的成分将发射红外辐射的温度下容纳样品气体， 该成分和允许红外辐射从容器逸出的窗口。 光学斩波器位于容器外部，用于中断从容器逸出的辐射。 过滤器位于从容器逸出的辐射的路径中，并且仅透射该范围内的辐射。 定位红外辐射检测器用于接收由过滤器通过的辐射，并发出代表由检测器接收的辐射的信号，其代表在样品气体中要确定其浓度的成分的浓度。

公开(公告)号：US20100288195A1

公开(公告)日：2010-11-18

申请号：US12846403

申请日：2010-07-29

申请人： Eiji IKEGAMI ,  Shoji Ikuhara ,  Takeshi Shimada ,  Kenichi Kuwabara ,  Takao Arase ,  Tsuyoshi Matsumoto

发明人： Eiji IKEGAMI ,  Shoji Ikuhara ,  Takeshi Shimada ,  Kenichi Kuwabara ,  Takao Arase ,  Tsuyoshi Matsumoto

IPC分类号： C23C16/00

CPC分类号： H01J37/32963 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/32917 ,  H01J37/32926 ,  H01J37/32935 ,  H01J37/32981 ,  H01J37/3299 ,  H01J2237/1825 ,  H01J2237/327 ,  H01L21/67069 ,  H01L21/67242 ,  H05H1/46

摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.

摘要翻译： 在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置 气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。 多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。 然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。 当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

公开(公告)号：US07825054B2

公开(公告)日：2010-11-02

申请号：US12063494

申请日：2005-08-11

申请人： Takeshi Shimada ,  Kei Matsumoto ,  Koichi Terao ,  Kazuya Toji ,  Kazuhiro Nishikawa

发明人： Takeshi Shimada ,  Kei Matsumoto ,  Koichi Terao ,  Kazuya Toji ,  Kazuhiro Nishikawa

IPC分类号： C04B35/468

CPC分类号： C04B35/4682 ,  C04B35/6262 ,  C04B35/62685 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3234 ,  C04B2235/3251 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/652 ,  C04B2235/6585 ,  H01G4/1227

摘要： The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.

摘要翻译： 本发明意图在BaTiO3半导体陶瓷组合物中提供一种半导体瓷组合物，其不使用Pb可以将居里温度转移到正方向并且可以显着降低室温下的电阻率。 根据本发明，当Ba被Al元素（至少一种Na，K和Li）和A2元素（Bi）部分取代时，Ba进一步被特定量的Q元素取代时，或者当Ba 部分被A1元素（Na，K和Li中的至少一种）和A2元素（Bi）部分取代，Ti被特定量的M元素部分取代，可以应用最佳价态控制， 室温下的电阻率可以显着降低。 因此，对于PTC热敏电阻，PTC加热器，PTC开关，温度检测器等中的应用，特别优选在汽车加热器中是最佳的。

公开(公告)号：US20100183862A1

公开(公告)日：2010-07-22

申请号：US12594278

申请日：2008-04-11

申请人： Yasuyuki Yokoe ,  Toru Kaneko ,  Hiroshi Numata ,  Takeshi Shimada

发明人： Yasuyuki Yokoe ,  Toru Kaneko ,  Hiroshi Numata ,  Takeshi Shimada

IPC分类号： B32B27/04 ,  C08K9/10 ,  B32B37/00

CPC分类号： C08J5/24 ,  C08G59/504 ,  C08J3/241 ,  C08J2363/00 ,  C08K5/41 ,  C08L63/00 ,  C08L2205/14 ,  Y10T156/10 ,  Y10T428/24994 ,  Y10T428/249948 ,  Y10T428/24995 ,  Y10T428/249952 ,  Y10T428/25 ,  Y10T428/254 ,  Y10T428/2938 ,  Y10T428/31511 ,  Y10T428/31515 ,  C08L2666/02

摘要： The present invention discloses: a resin composition comprising, as essential components, 100 parts by mass of a component (A) which is an epoxy resin, 41 to 80 parts by mass of a component (B) which is thermoplastic resin particles, and 20 to 50 parts by mass (in terms of diaminodiphenylsulfone) of a component (C) which is diaminodiphenylsulfone microencapsulated with a coating agent, in which resin composition the thermoplastic resin particles (B) comprise at least thermoplastic resin particles (B1) having an average particle diameter of 1 to 50 μm and thermoplastic resin particles (B2) having an average particle diameter of 2 to 100 μm at a mass ratio of 3:1 to 1:3 and the average particle diameter ratio D2/D1 of the average particle diameter D2 of the thermoplastic resin particles (B2) to the average particle diameter D1 of the thermoplastic resin particles (B1) is 2 or more, and a prepreg produced using the resin composition.

摘要翻译： 本发明公开了一种树脂组合物，作为必要成分，将100质量份作为环氧树脂的成分（A），41〜80质量份作为热塑性树脂粒子的成分（B）和20质量份 至50质量份（以二氨基二苯砜计）（以二氨基二苯基砜为单位），该组分（C）是用涂料微胶囊化的二氨基二苯砜，其中树脂组合物热塑性树脂颗粒（B）至少包含具有平均颗粒的热塑性树脂颗粒 直径为1〜50μm，平均粒径为2〜100μm的热塑性树脂粒子（B2）的质量比为3:1〜1:3，平均粒径D2 / D1为平均粒径D2 的热塑性树脂粒子（B2）与热塑性树脂粒子（B1）的平均粒径D1的比为2以上，使用该树脂组合物制造的预浸料坯。

公开(公告)号：US20090297066A1

公开(公告)日：2009-12-03

申请号：US12219931

申请日：2008-07-30

申请人： Hideo Hatayama ,  Masamichi Sakaino ,  Masaru Nishita ,  Takeshi Shimada

发明人： Hideo Hatayama ,  Masamichi Sakaino ,  Masaru Nishita ,  Takeshi Shimada

IPC分类号： G06K9/03

CPC分类号： G06T11/60 ,  A63F13/12 ,  A63F13/63 ,  A63F2300/57 ,  A63F2300/6018

摘要： A game apparatus functioning as an image transmitting apparatus includes a CPU. The CPU performs an edit of at least one image with a controller according to an instruction by a user, transmits image data of the image through a wireless communication module to a network during execution of the edit, and further transmits layout information indicating a layout of the image after completion of the edit.

摘要翻译： 用作图像发送装置的游戏装置包括CPU。 CPU根据用户的指示，使用控制器执行至少一个图像的编辑，在执行编辑期间通过无线通信模块将图像的图像数据发送到网络，并且进一步发送指示布局的布局信息 完成编辑后的图像。

公开(公告)号：US20090111680A1

公开(公告)日：2009-04-30

申请号：US12063483

申请日：2005-08-11

申请人： Takeshi Shimada

发明人： Takeshi Shimada

IPC分类号： C04B35/495

CPC分类号： H01B3/12 ,  C04B35/495 ,  C04B35/62695 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6585 ,  H05K1/0306

摘要： ABSTRACT The invention intends to provide a dielectric porcelain composition for use in electronic devices which can be controlled in the temperature coefficient πf in particular in a negative direction and can shorten a sintering period while maintaining a high Qf value and a high dielectric constant. According to the invention, in conventional composition having a composition formula represented by XBa(Mg1/3Ta2/3)O3-Y(BazSrl-z)(Ga1/2Ta1/2)O3, when Mg is substituted by Ni to form a specific structure, the temperature coefficient πf can be controlled in a negative direction and the πf can be controlled in the range of 0.80 to −4.45 ppm/° C. while maintaining a high Qf value and a high dielectric constant, and even when a sintering period, which has been so far necessary substantially 50 hr, is reduced to 25 hr substantially one half the above, similar Qf value can be obtained.

摘要翻译： 摘要本发明旨在提供一种用于电子器件的电介质瓷组合物，其可以特别在负方向上控制温度系数pif，并且可以在保持高Qf值和高介电常数的同时缩短烧结周期。 根据本发明，在具有由XBa（Mg1 / 3Ta2 / 3）O3-Y（BazSrl-z）（Ga1 / 2Ta1 / 2）O3表示的组成式的常规组合物中，当Mg被Ni取代以形成特定结构时 ，可以将温度系数pif控制在负方向，并且可以将pif控制在0.80〜-4.45ppm /℃的范围内，同时保持高Qf值和高介电常数，并且即使当烧结期间， 基本上50小时已经基本上需要减少到25小时，可以获得类似的Qf值。

公开(公告)号：US20090078676A1

公开(公告)日：2009-03-26

申请号：US12022207

申请日：2008-01-30

申请人： Kentaro YAMADA ,  Takeshi Shimada ,  Kotaro Fujimoto

发明人： Kentaro YAMADA ,  Takeshi Shimada ,  Kotaro Fujimoto

IPC分类号： C23F1/00

CPC分类号： C23F4/00 ,  G11B5/3163

摘要： The invention provides a dry etching method for processing a wafer having an Ru film formed on a thick Al2O3 film to be used for a magnetic head, capable of realizing high selectivity. In the etching of a wafer having disposed on an NiCr film 15 an Al2O3 film 14, an Ru film 13, an SiO2 film 12 and a resist mask 11, the Ru film 13 is etched via plasma using a processing gas containing Cl2 and O2 (FIG. 1(c)), and thereafter, the Ru film 13 is used as a mask to etch the Al2O3 film 14 via plasma using a gas mixture mainly containing BCl3 and also containing Cl2 and Ar (FIG. 1(d)).

摘要翻译： 本发明提供了一种用于处理具有形成在用于磁头的厚Al 2 O 3膜上的Ru膜的晶片的干蚀刻方法，其能够实现高选择性。 在设置在NiCr膜15上的Al 2 O 3膜14，Ru膜13，SiO 2膜12和抗蚀剂掩模11的晶片的蚀刻中，使用含有Cl 2和O 2的处理气体等离子体蚀刻Ru膜13 然后，使用Ru膜13作为掩模，使用主要含有BCl 3的气体混合物，还含有Cl 2和Ar（图1（d））的等离子体来蚀刻Al 2 O 3膜14。

公开(公告)号：US20080227622A1

公开(公告)日：2008-09-18

申请号：US11993700

申请日：2005-06-24

申请人： Takeshi Shimada ,  Kazuhiro Kura

发明人： Takeshi Shimada ,  Kazuhiro Kura

IPC分类号： C04B35/47

CPC分类号： H01B3/12 ,  C04B35/44 ,  C04B35/47 ,  C04B35/6262 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3286 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6585 ,  C04B2235/80 ,  C04B2235/85 ,  C04B2235/94

摘要： The invention intends to provide a dielectric porcelain composition for use in electronic devices, which has the dielectric characteristics such that the Qf value is high, the temperature coefficient τf of a resonant frequency is small and a value thereof can be controlled in a wide range in positive and negative directions in the vicinity where the relative dielectric constant εr is 39. According to the invention, when, in La—Pr—Al—Ga—Sr—Ti-based oxide dielectric porcelain, contents of the respective elements are limited to be within particular ranges and Sr is partially substituted by Ca, a structure having a (1-x)(La1-yLny)(Al1-zGaz)O3-x(Sr1-mCam)TiO3 solid solution as a main phase, in which a solid solution of Al—Ga—Sr-based oxide and/or a solid solution of Al—Ga-based oxide and a Sr oxide is/are precipitated in a grain boundary thereof, can be obtained, whereby the above-mentioned object can be achieved.

摘要翻译： 本发明旨在提供一种用于电子器件的电介质瓷组合物，其具有使Qf值高的介电特性，谐振频率的温度系数τf小，其值可以在宽范围内被控制 在相对介电常数ε为39附近的正方向和负方向。根据本发明，当在La-Pr-Al-Ga-Sr-Ti系氧化物介电瓷中，各元素的含量被限制为 在特定范围内，并且Sr部分地被Ca取代，具有（1-x）（La 1-y L n Y y）（Al 1-z） Ga O O O O x x）））））））））））））））））））））））））））））））））））））））））））））） 其中Al-Ga-Sr基氧化物和/或Al-Ga类氧化物和Sr氧化物的固溶体的固溶体沉淀在 可以得到其晶界，由此得到上述物体 可以实现。

公开(公告)号：US20080170977A1

公开(公告)日：2008-07-17

申请号：US11912799

申请日：2006-04-28

申请人： Takeshi Shimada ,  Koichi Terao ,  Kazuya Toji

发明人： Takeshi Shimada ,  Koichi Terao ,  Kazuya Toji

IPC分类号： C01F17/00 ,  C01G23/04

CPC分类号： C04B35/4682 ,  C01G23/006 ,  C01G29/006 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2006/40 ,  C04B35/62635 ,  C04B35/62645 ,  C04B35/62675 ,  C04B35/62685 ,  C04B35/6303 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3234 ,  C04B2235/3236 ,  C04B2235/3251 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6584 ,  C04B2235/96 ,  H01C7/025 ,  H01C17/06533 ,  H01G4/1227

摘要： To provide a semiconductor porcelain composition in which a portion of Ba of BaTiO3 is substituted by Bi-Na, which is capable of inhibiting evaporation of Bi in a calcining step, inhibiting the formation of secondary phases by preventing a compositional shift of Bi-Na, further reducing a resistivity at room temperature, and inhibiting a scattering in a Curie temperature, and a method of producing the same. By separately preparing a composition of (BaQ)TiO3 (Q is a semiconductive dopant) and a composition of (BiNa)TiO3, and calcining the composition of (BaQ)TiO3 at a comparatively high temperature and calcining the composition of (BiNa)TiO3 at a comparatively low temperature to thereby calcine the compositions at their respective optimum temperatures, evaporation of Bi in the composition of (BiNa)TiO3 can be inhibited, formation of secondary phases can be inhibited by preventing a compositional shift of Bi-Na; and by mixing, forming and sintering the calcined powders, a semiconductor porcelain composition having a small resistivity at room temperature and being inhibited from a scattering in the Curie temperature can be provided.

摘要翻译： 为了提供一种半导体陶瓷组合物，其中BaTiO 3的Ba的一部分被Bi-Na所取代，Bi-Na能够在煅烧步骤中抑制Bi的蒸发，通过防止二次相的形成来抑制 Bi-Na的组成位移，进一步降低室温下的电阻率，抑制居里温度的散射及其制造方法。 通过分别制备（BaQ）TiO 3（Q是半导体掺杂剂）和（BiNa）TiO 3组合物的组合物，并煅烧组合物（BaQ） 在比较高的温度下煅烧TiO 2，并在比较低的温度下煅烧（BiNa）TiO 3的组成，从而在各自的最适温度下焙烧组合物，蒸发Bi 可以抑制（BiNa）TiO 3 3的组成，可以通过防止Bi-Na的组成偏移来抑制二次相的形成。 并且通过混合，形成和烧结煅烧粉末，可以提供在室温下具有小的电阻率并被抑制居里温度的散射的半导体瓷组合物。

公开(公告)号：US07320056B2

公开(公告)日：2008-01-15

申请号：US11285184

申请日：2005-11-23

申请人： Takeshi Shimada ,  Tatsuru Nakagaki ,  Akihiro Kobayashi

发明人： Takeshi Shimada ,  Tatsuru Nakagaki ,  Akihiro Kobayashi

IPC分类号： G06F13/16

CPC分类号： G06F12/0831 ,  G06F12/0813 ,  G06F13/1663

摘要： Data transmission for writing data into a shared memory is performed by a high-speed dedicated line provided between each processor and the shared memory. When a processor performs writing to a shared memory space, the processor notifies an update notification bus corresponding to the conventional global bus, to which address the update is to be performed. The other processors which have detected this notification inhibit access to that address and wait for the write data to be sent to the address via the dedicated line. When the data has arrived, the data is written into the corresponding address. Here, the data is also written into the corresponding address, thereby maintaining the cache coherency. Moreover, when transmitting a write address, it is necessary to acquire the bus use right while data transmission is performed by using the dedicated line, which significantly reduces the time required for acquiring the bus use right.

摘要翻译： 通过设置在每个处理器和共享存储器之间的高速专用线来执行用于将数据写入共享存储器的数据传输。 当处理器对共享存储器空间进行写入时，处理器通知对应于常规全局总线的更新通知总线，该更新将被执行到该地址。 检测到该通知的其他处理器禁止访问该地址，并等待通过专用线将写入数据发送到地址。 数据到达时，数据写入相应的地址。 这里，数据也被写入相应的地址，从而保持高速缓存一致性。 此外，当发送写入地址时，需要通过使用专用线来执行数据传输时获取总线使用权，这大大减少了获取总线使用权所需的时间。