公开(公告)号：US06914207B2

公开(公告)日：2005-07-05

申请号：US10688991

申请日：2003-10-21

申请人： Tadayoshi Kawaguchi ,  Tadamitsu Kanekiyo ,  Akihiko Mitsuda ,  Takeshi Shimada ,  Saburou Kanai

发明人： Tadayoshi Kawaguchi ,  Tadamitsu Kanekiyo ,  Akihiko Mitsuda ,  Takeshi Shimada ,  Saburou Kanai

IPC分类号： H01J37/32 ,  B23K9/00

CPC分类号： H01J37/32862 ,  H01J37/321

摘要： In a plasma processing method which comprises supplying a processing gas to a vacuum vessel forming a plasma production part, producing a plasma using an antenna and a Faraday shield which are provided at outer periphery of the vacuum vessel and to which a high-frequency electric power can be applied, and carrying out the processing, a voltage of at least 500 V is applied to the Faraday shield and a sample which is disposed in the vacuum vessel and which is a nonvolatile material as a material to be etched is etched.

摘要翻译： 在等离子体处理方法中，其包括向形成等离子体生产部件的真空容器供给处理气体，使用设置在真空容器的外周的天线和法拉第屏蔽来制造等离子体，并且将高频电力 并且进行处理时，向法拉第屏蔽件施加至少500V的电压，并且蚀刻设置在真空容器中并且作为待蚀刻材料的非挥发性材料的样品。

公开(公告)号：US20060032585A1

公开(公告)日：2006-02-16

申请号：US11198182

申请日：2005-08-08

申请人： Yoshitaka Kai ,  Ken Yoshioka ,  Tadamitsu Kanekiyo ,  Takeshi Shimada

发明人： Yoshitaka Kai ,  Ken Yoshioka ,  Tadamitsu Kanekiyo ,  Takeshi Shimada

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/31122 ,  H01L21/31116

摘要： A high-dielectric-constant gate insulating film 32 such as HfO2 is etched with gas plasma using gas selected from Ar gas, He gas, Ar+He mixed gas, and mixed gases formed by mixing CH4 with the preceding gases while maintaining a temperature of 40° C. or higher, thus ensuring high etching selective ratio between a HfO2 film 32 and a Poly-Si layer 33, a substrate Si layer 31 and a SiO2 mask 34, reducing the amount of loss of the substrate Si layer 31 and side etching of side walls of the Poly-Si gate portion 33 during plasma etching of HfO2.

摘要翻译： 使用选自Ar气体，He气体，Ar + He混合气体的气体和通过混合CH形成的混合气体，用气体等离子体蚀刻诸如HfO 2的高介电常数栅极绝缘膜32， 在保持40℃或更高温度的同时保持高的蚀刻选择比，从而确保HfO 2膜32和多晶硅层33之间的高蚀刻选择比， 衬底Si层31和SiO 2掩模34，在HfO 3的等离子体蚀刻期间减少衬底Si层31的损耗量和多晶硅栅极部分33的侧壁的侧蚀刻， SUB> 2 。

公开(公告)号：US20050014380A1

公开(公告)日：2005-01-20

申请号：US10650841

申请日：2003-08-29

申请人： Yoshitaka Kai ,  Ken Yoshioka ,  Tadamitsu Kanekiyo ,  Takeshi Shimada

发明人： Yoshitaka Kai ,  Ken Yoshioka ,  Tadamitsu Kanekiyo ,  Takeshi Shimada

IPC分类号： H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/461 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78

CPC分类号： H01L21/31122 ,  H01L21/31116

摘要： A high-dielectric-constant gate insulating film 32 such as HfO2 is etched with gas plasma using gas selected from Ar gas, He gas, Ar+He mixed gas, and mixed gases formed by mixing CH4 with the preceding gases while maintaining a temperature of 40° C. or higher, thus ensuring high etching selective ratio between a HfO2 film 32 and a Poly-Si layer 33, a substrate Si layer 31 and a SiO2 mask 34, reducing the amount of loss of the substrate Si layer 31 and side etching of sidewalls of the Poly-Si gate portion 33 during plasma etching of HfO2.

摘要翻译： 使用选自Ar气体，He气体，Ar + He混合气体的气体和通过将CH 4与前述气体混合形成的混合气体，使用气体等离子体来蚀刻诸如HfO 2的高介电常数栅极绝缘膜32，同时保持温度 40℃以上，因此确保HfO 2膜32与Poly-Si层33，基板Si层31和SiO 2掩模34之间的高蚀刻选择比，减少基板Si层31和侧面的损耗量 在HfO 2的等离子体蚀刻期间蚀刻多晶硅栅极部分33的侧壁。

公开(公告)号：US20100288195A1

公开(公告)日：2010-11-18

申请号：US12846403

申请日：2010-07-29

申请人： Eiji IKEGAMI ,  Shoji Ikuhara ,  Takeshi Shimada ,  Kenichi Kuwabara ,  Takao Arase ,  Tsuyoshi Matsumoto

发明人： Eiji IKEGAMI ,  Shoji Ikuhara ,  Takeshi Shimada ,  Kenichi Kuwabara ,  Takao Arase ,  Tsuyoshi Matsumoto

IPC分类号： C23C16/00

CPC分类号： H01J37/32963 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/32917 ,  H01J37/32926 ,  H01J37/32935 ,  H01J37/32981 ,  H01J37/3299 ,  H01J2237/1825 ,  H01J2237/327 ,  H01L21/67069 ,  H01L21/67242 ,  H05H1/46

摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.

摘要翻译： 在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置 气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。 多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。 然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。 当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

公开(公告)号：US07825054B2

公开(公告)日：2010-11-02

申请号：US12063494

申请日：2005-08-11

申请人： Takeshi Shimada ,  Kei Matsumoto ,  Koichi Terao ,  Kazuya Toji ,  Kazuhiro Nishikawa

发明人： Takeshi Shimada ,  Kei Matsumoto ,  Koichi Terao ,  Kazuya Toji ,  Kazuhiro Nishikawa

IPC分类号： C04B35/468

CPC分类号： C04B35/4682 ,  C04B35/6262 ,  C04B35/62685 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3234 ,  C04B2235/3251 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/652 ,  C04B2235/6585 ,  H01G4/1227

摘要： The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.

摘要翻译： 本发明意图在BaTiO3半导体陶瓷组合物中提供一种半导体瓷组合物，其不使用Pb可以将居里温度转移到正方向并且可以显着降低室温下的电阻率。 根据本发明，当Ba被Al元素（至少一种Na，K和Li）和A2元素（Bi）部分取代时，Ba进一步被特定量的Q元素取代时，或者当Ba 部分被A1元素（Na，K和Li中的至少一种）和A2元素（Bi）部分取代，Ti被特定量的M元素部分取代，可以应用最佳价态控制， 室温下的电阻率可以显着降低。 因此，对于PTC热敏电阻，PTC加热器，PTC开关，温度检测器等中的应用，特别优选在汽车加热器中是最佳的。

公开(公告)号：US20100183862A1

公开(公告)日：2010-07-22

申请号：US12594278

申请日：2008-04-11

申请人： Yasuyuki Yokoe ,  Toru Kaneko ,  Hiroshi Numata ,  Takeshi Shimada

发明人： Yasuyuki Yokoe ,  Toru Kaneko ,  Hiroshi Numata ,  Takeshi Shimada

IPC分类号： B32B27/04 ,  C08K9/10 ,  B32B37/00

CPC分类号： C08J5/24 ,  C08G59/504 ,  C08J3/241 ,  C08J2363/00 ,  C08K5/41 ,  C08L63/00 ,  C08L2205/14 ,  Y10T156/10 ,  Y10T428/24994 ,  Y10T428/249948 ,  Y10T428/24995 ,  Y10T428/249952 ,  Y10T428/25 ,  Y10T428/254 ,  Y10T428/2938 ,  Y10T428/31511 ,  Y10T428/31515 ,  C08L2666/02

摘要： The present invention discloses: a resin composition comprising, as essential components, 100 parts by mass of a component (A) which is an epoxy resin, 41 to 80 parts by mass of a component (B) which is thermoplastic resin particles, and 20 to 50 parts by mass (in terms of diaminodiphenylsulfone) of a component (C) which is diaminodiphenylsulfone microencapsulated with a coating agent, in which resin composition the thermoplastic resin particles (B) comprise at least thermoplastic resin particles (B1) having an average particle diameter of 1 to 50 μm and thermoplastic resin particles (B2) having an average particle diameter of 2 to 100 μm at a mass ratio of 3:1 to 1:3 and the average particle diameter ratio D2/D1 of the average particle diameter D2 of the thermoplastic resin particles (B2) to the average particle diameter D1 of the thermoplastic resin particles (B1) is 2 or more, and a prepreg produced using the resin composition.

摘要翻译： 本发明公开了一种树脂组合物，作为必要成分，将100质量份作为环氧树脂的成分（A），41〜80质量份作为热塑性树脂粒子的成分（B）和20质量份 至50质量份（以二氨基二苯砜计）（以二氨基二苯基砜为单位），该组分（C）是用涂料微胶囊化的二氨基二苯砜，其中树脂组合物热塑性树脂颗粒（B）至少包含具有平均颗粒的热塑性树脂颗粒 直径为1〜50μm，平均粒径为2〜100μm的热塑性树脂粒子（B2）的质量比为3:1〜1:3，平均粒径D2 / D1为平均粒径D2 的热塑性树脂粒子（B2）与热塑性树脂粒子（B1）的平均粒径D1的比为2以上，使用该树脂组合物制造的预浸料坯。

公开(公告)号：US20090297066A1

公开(公告)日：2009-12-03

申请号：US12219931

申请日：2008-07-30

申请人： Hideo Hatayama ,  Masamichi Sakaino ,  Masaru Nishita ,  Takeshi Shimada

发明人： Hideo Hatayama ,  Masamichi Sakaino ,  Masaru Nishita ,  Takeshi Shimada

IPC分类号： G06K9/03

CPC分类号： G06T11/60 ,  A63F13/12 ,  A63F13/63 ,  A63F2300/57 ,  A63F2300/6018

摘要： A game apparatus functioning as an image transmitting apparatus includes a CPU. The CPU performs an edit of at least one image with a controller according to an instruction by a user, transmits image data of the image through a wireless communication module to a network during execution of the edit, and further transmits layout information indicating a layout of the image after completion of the edit.

摘要翻译： 用作图像发送装置的游戏装置包括CPU。 CPU根据用户的指示，使用控制器执行至少一个图像的编辑，在执行编辑期间通过无线通信模块将图像的图像数据发送到网络，并且进一步发送指示布局的布局信息 完成编辑后的图像。

公开(公告)号：US20090111680A1

公开(公告)日：2009-04-30

申请号：US12063483

申请日：2005-08-11

申请人： Takeshi Shimada

发明人： Takeshi Shimada

IPC分类号： C04B35/495

CPC分类号： H01B3/12 ,  C04B35/495 ,  C04B35/62695 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6585 ,  H05K1/0306

摘要： ABSTRACT The invention intends to provide a dielectric porcelain composition for use in electronic devices which can be controlled in the temperature coefficient πf in particular in a negative direction and can shorten a sintering period while maintaining a high Qf value and a high dielectric constant. According to the invention, in conventional composition having a composition formula represented by XBa(Mg1/3Ta2/3)O3-Y(BazSrl-z)(Ga1/2Ta1/2)O3, when Mg is substituted by Ni to form a specific structure, the temperature coefficient πf can be controlled in a negative direction and the πf can be controlled in the range of 0.80 to −4.45 ppm/° C. while maintaining a high Qf value and a high dielectric constant, and even when a sintering period, which has been so far necessary substantially 50 hr, is reduced to 25 hr substantially one half the above, similar Qf value can be obtained.

摘要翻译： 摘要本发明旨在提供一种用于电子器件的电介质瓷组合物，其可以特别在负方向上控制温度系数pif，并且可以在保持高Qf值和高介电常数的同时缩短烧结周期。 根据本发明，在具有由XBa（Mg1 / 3Ta2 / 3）O3-Y（BazSrl-z）（Ga1 / 2Ta1 / 2）O3表示的组成式的常规组合物中，当Mg被Ni取代以形成特定结构时 ，可以将温度系数pif控制在负方向，并且可以将pif控制在0.80〜-4.45ppm /℃的范围内，同时保持高Qf值和高介电常数，并且即使当烧结期间， 基本上50小时已经基本上需要减少到25小时，可以获得类似的Qf值。

公开(公告)号：US20090078676A1

公开(公告)日：2009-03-26

申请号：US12022207

申请日：2008-01-30

申请人： Kentaro YAMADA ,  Takeshi Shimada ,  Kotaro Fujimoto

发明人： Kentaro YAMADA ,  Takeshi Shimada ,  Kotaro Fujimoto

IPC分类号： C23F1/00

CPC分类号： C23F4/00 ,  G11B5/3163

摘要： The invention provides a dry etching method for processing a wafer having an Ru film formed on a thick Al2O3 film to be used for a magnetic head, capable of realizing high selectivity. In the etching of a wafer having disposed on an NiCr film 15 an Al2O3 film 14, an Ru film 13, an SiO2 film 12 and a resist mask 11, the Ru film 13 is etched via plasma using a processing gas containing Cl2 and O2 (FIG. 1(c)), and thereafter, the Ru film 13 is used as a mask to etch the Al2O3 film 14 via plasma using a gas mixture mainly containing BCl3 and also containing Cl2 and Ar (FIG. 1(d)).

摘要翻译： 本发明提供了一种用于处理具有形成在用于磁头的厚Al 2 O 3膜上的Ru膜的晶片的干蚀刻方法，其能够实现高选择性。 在设置在NiCr膜15上的Al 2 O 3膜14，Ru膜13，SiO 2膜12和抗蚀剂掩模11的晶片的蚀刻中，使用含有Cl 2和O 2的处理气体等离子体蚀刻Ru膜13 然后，使用Ru膜13作为掩模，使用主要含有BCl 3的气体混合物，还含有Cl 2和Ar（图1（d））的等离子体来蚀刻Al 2 O 3膜14。

公开(公告)号：US20080227622A1

公开(公告)日：2008-09-18

申请号：US11993700

申请日：2005-06-24

申请人： Takeshi Shimada ,  Kazuhiro Kura

发明人： Takeshi Shimada ,  Kazuhiro Kura

IPC分类号： C04B35/47

CPC分类号： H01B3/12 ,  C04B35/44 ,  C04B35/47 ,  C04B35/6262 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3286 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6585 ,  C04B2235/80 ,  C04B2235/85 ,  C04B2235/94

摘要： The invention intends to provide a dielectric porcelain composition for use in electronic devices, which has the dielectric characteristics such that the Qf value is high, the temperature coefficient τf of a resonant frequency is small and a value thereof can be controlled in a wide range in positive and negative directions in the vicinity where the relative dielectric constant εr is 39. According to the invention, when, in La—Pr—Al—Ga—Sr—Ti-based oxide dielectric porcelain, contents of the respective elements are limited to be within particular ranges and Sr is partially substituted by Ca, a structure having a (1-x)(La1-yLny)(Al1-zGaz)O3-x(Sr1-mCam)TiO3 solid solution as a main phase, in which a solid solution of Al—Ga—Sr-based oxide and/or a solid solution of Al—Ga-based oxide and a Sr oxide is/are precipitated in a grain boundary thereof, can be obtained, whereby the above-mentioned object can be achieved.

摘要翻译： 本发明旨在提供一种用于电子器件的电介质瓷组合物，其具有使Qf值高的介电特性，谐振频率的温度系数τf小，其值可以在宽范围内被控制 在相对介电常数ε为39附近的正方向和负方向。根据本发明，当在La-Pr-Al-Ga-Sr-Ti系氧化物介电瓷中，各元素的含量被限制为 在特定范围内，并且Sr部分地被Ca取代，具有（1-x）（La 1-y L n Y y）（Al 1-z） Ga O O O O x x）））））））））））））））））））））））））））））））））））））））））））））） 其中Al-Ga-Sr基氧化物和/或Al-Ga类氧化物和Sr氧化物的固溶体的固溶体沉淀在 可以得到其晶界，由此得到上述物体 可以实现。