公开(公告)号：US07173268B2

公开(公告)日：2007-02-06

申请号：US10986910

申请日：2004-11-15

申请人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

IPC分类号： G01N21/86

CPC分类号： H01J37/28 ,  H01J37/304 ,  H01J2237/2814 ,  H01J2237/2817 ,  H01J2237/30455

摘要： This invention provides a method of measuring semiconductor pattern dimensions capable of realizing a stable and highly precise pattern dimension measurement technique even when the pattern cross-sectional shapes are changed and making the calculation amount relatively small to reduce the calculation time. More specifically, the relationship between cross-sectional shapes of a pattern and measurement errors in a specified image processing technique is evaluated in advance by the electron beam simulation in a pattern measurement system in a length measuring SEM, and in the actual dimension measurement, dimensions of an evaluation objective pattern are measured from image signals of a scanning electron microscope, and errors of the dimensional measurement of the evaluation objective pattern are estimated and revised based on the relationship between cross-sectional shapes of a pattern and measurement errors evaluated in advance, thereby realizing highly precise measurement where dimensional errors depending on pattern solid shapes are eliminated.

摘要翻译： 本发明提供一种测量半导体图案尺寸的方法，即使当图案截面形状改变并使计算量相对较小以减少计算时间时，也能够实现稳定且高度精确的图案尺寸测量技术。 更具体地说，通过长度测量SEM中的图案测量系统中的电子束模拟预先评估图案的截面形状与特定图像处理技术中的测量误差之间的关系，并且在实际尺寸测量中，尺寸 根据扫描电子显微镜的图像信号测量评价对象图案，并且基于预先评估的图案的截面形状和测量误差之间的关系来估计和修正评估对象图案的尺寸测量的误差， 从而实现高精度测量，其中取消了取决于图形实心形状的尺寸误差。

公开(公告)号：US20050205780A1

公开(公告)日：2005-09-22

申请号：US10988522

申请日：2004-11-16

申请人： Ryo Nakagaki ,  Hiroki Kawada ,  Chie Shishido ,  Mayuka Oosaki

发明人： Ryo Nakagaki ,  Hiroki Kawada ,  Chie Shishido ,  Mayuka Oosaki

IPC分类号： G01B15/00 ,  G01N23/00 ,  G01N23/225 ,  G03C5/00 ,  H01J37/28

CPC分类号： G01N23/225

摘要： The present invention relates to a CDSEM (scanning electron microscope) capable of evaluating and presenting the measurement repeatability as a tool with a high degree of accuracy without being influenced by fluctuations in micro-minute shape that tend to increase with the microminiaturization of semiconductor patterns, and to a method for evaluating accuracy of repeated measurement using the scanning electron microscope. There is provided a function whereby when measuring a plurality of times the same part to be measured, by making use of a micro-minute pattern shape such as the roughness included in the pattern, pattern matching with a roughness template image is performed to correct two-dimensional deviation in position of the part to be measured on an enlarged measurement image acquired, and then an enlarged measurement area image is extracted and acquired. This makes it possible to eliminate variation in measurements caused by the micro-minute pattern shape.

摘要翻译： 本发明涉及一种CDSEM（扫描电子显微镜），其能够以高精度评估和呈现作为工具的测量重复性，而不受半导体图案的微小化倾向于增加的微细形状的波动的影响， 以及使用扫描电子显微镜评价重复测定的精度的方法。 提供了一种功能，当通过利用包含在图案中的粗糙度的微细图案形状来测量多次相同的被测量部分时，执行与粗糙度模板图像的匹配，以校正两个 在获取的放大测量图像上待测量部分的位置的维度偏差，然后提取并获取放大的测量区域图像。 这使得可以消除由微微分图案形状引起的测量中的变化。

公开(公告)号：US06947587B1

公开(公告)日：2005-09-20

申请号：US09294137

申请日：1999-04-20

申请人： Shunji Maeda ,  Kenji Oka ,  Yukihiro Shibata ,  Minoru Yoshida ,  Chie Shishido ,  Yuji Takagi ,  Atsushi Yoshida ,  Kazuo Yamaguchi

发明人： Shunji Maeda ,  Kenji Oka ,  Yukihiro Shibata ,  Minoru Yoshida ,  Chie Shishido ,  Yuji Takagi ,  Atsushi Yoshida ,  Kazuo Yamaguchi

IPC分类号： G01N21/95 ,  G01N21/956 ,  G06K9/00 ,  G06T7/00

CPC分类号： G06T7/001 ,  G01N21/9501 ,  G01N21/95607 ,  G06T7/0004 ,  G06T2207/30148

摘要： A method of inspecting defects of a plurality of patterns that are formed on a substrate to have naturally the same shape. According to this method, in order to detect very small defects of the patterns with high sensitivity without being affected by irregular brightness due to the thickness difference between the patterns formed on a semiconductor wafer, a first pattern being inspected is detected to produce a first image of the first pattern, the first image is stored, a second pattern being inspected is detected to produce a second image of said second pattern, the stored first image and the second image are matched in brightness, and the brightness-matched first and second images are compared with each other so that the patterns can be inspected.

摘要翻译： 检查在基板上形成的具有自然相同形状的多个图案的缺陷的方法。 根据该方法，为了以高灵敏度检测图案的非常小的缺陷，不受由于在半导体晶片上形成的图案之间的厚度差而引起的不规则亮度的影响，检测出被检查的第一图案以产生第一图像 第一图案被存储，检测出被检查的第二图案以产生所述第二图案的第二图像，所存储的第一图像和第二图像的亮度相匹配，并且亮度匹配的第一和第二图像 彼此进行比较，从而可以检查图案。

公开(公告)号：US20050016682A1

公开(公告)日：2005-01-27

申请号：US10893275

申请日：2004-07-19

申请人： Wataru Nagatomo ,  Ryo Nakagaki ,  Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

发明人： Wataru Nagatomo ,  Ryo Nakagaki ,  Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/66 ,  C23F1/00

CPC分类号： H01L22/20 ,  H01L21/31116 ,  H01L21/32136 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a system that automatically calculates optimal etching parameters in order to perform desired etching in an etching process in semiconductor manufacturing. A model representing etching parameters and an etching performance quantitative value at the time when etching is performed with the etching parameters is prepared in advance, and when desired etching is performed, optimal etching parameters are calculated from the model.

摘要翻译： 本发明涉及一种在半导体制造中在蚀刻工艺中自动计算最佳蚀刻参数以执行所需蚀刻的系统。 预先准备表示蚀刻参数的模型和使用蚀刻参数进行蚀刻时的蚀刻性能定量值，并且当需要蚀刻时，根据该模型计算最佳蚀刻参数。

公开(公告)号：US08481936B2

公开(公告)日：2013-07-09

申请号：US13348813

申请日：2012-01-12

申请人： Chie Shishido ,  Maki Tanaka ,  Atsushi Miyamoto

发明人： Chie Shishido ,  Maki Tanaka ,  Atsushi Miyamoto

IPC分类号： H01J37/26

CPC分类号： G03F1/84 ,  G03F1/86 ,  G03F7/70625

摘要： The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.

摘要翻译： 本发明提供一种扫描电子显微镜系统，其适于输出与样品的实际图案边缘端相匹配的轮廓信息，并且被布置成通过相对于扫描电子显微镜图像沿切线方向投影而产生局部投影波形 到扫描电子显微镜图像的图案边缘的每个点处的图案边缘，通过将在每个点处生成的局部投影波形应用到先前已经创建的库来估计在样本上传送的图案的横截面形状 将横截面形状与电子束信号波形相关联，以横截面形状获得边缘端配件的位置坐标，并将图案的轮廓作为位置坐标的范围输出。

公开(公告)号：US20120151428A1

公开(公告)日：2012-06-14

申请号：US13390354

申请日：2010-07-15

申请人： Maki Tanaka ,  Norio Hasegawa ,  Chie Shishido ,  Mayuka Osaki

发明人： Maki Tanaka ,  Norio Hasegawa ,  Chie Shishido ,  Mayuka Osaki

IPC分类号： G06F17/50

CPC分类号： G01B15/04 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention aims at proposing a library creation method and a pattern shape estimation method in which it is possible, when estimating a shape based on comparison between an actual waveform and a library, to appropriately estimate the shape.As an illustrative embodiment to achieve the object, there are proposed a method of selecting a pattern by referring to a library, a method of creating a library by use of pattern cross-sectional shapes calculated through an exposure process simulation in advance, and a method for selecting a pattern shape stored in the library.

摘要翻译： 本发明旨在提出一种库创建方法和图案形状估计方法，其中当基于实际波形和库之间的比较来估计形状时，可以适当地估计形状。 作为实现该目的的说明性实施例，提出了通过参照库来选择图案的方法，通过使用预先通过曝光处理模拟计算的图案横截面形状来创建库的方法，以及方法 用于选择存储在库中的图案形状。

公开(公告)号：US20120112067A1

公开(公告)日：2012-05-10

申请号：US13348813

申请日：2012-01-12

申请人： Chie Shishido ,  Maki Tanaka ,  Atsushi Miyamoto

发明人： Chie Shishido ,  Maki Tanaka ,  Atsushi Miyamoto

IPC分类号： H01J37/28

CPC分类号： G03F1/84 ,  G03F1/86 ,  G03F7/70625

摘要： The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.

摘要翻译： 本发明提供一种扫描电子显微镜系统，其适于输出与样品的实际图案边缘端相匹配的轮廓信息，并且被布置成通过相对于扫描电子显微镜图像沿切线方向投影而产生局部投影波形 到扫描电子显微镜图像的图案边缘的每个点处的图案边缘，通过将在每个点处生成的局部投影波形应用到先前已经创建的库来估计在样本上传送的图案的横截面形状 将横截面形状与电子束信号波形相关联，以横截面形状获得边缘端配件的位置坐标，并将图案的轮廓作为位置坐标的范围输出。

公开(公告)号：US08107717B2

公开(公告)日：2012-01-31

申请号：US13072102

申请日：2011-03-25

申请人： Shunji Maeda ,  Kenji Oka ,  Yukihiro Shibata ,  Minoru Yoshida ,  Chie Shishido ,  Yuji Takagi ,  Atsushi Yoshida ,  Kazuo Yamaguchi

发明人： Shunji Maeda ,  Kenji Oka ,  Yukihiro Shibata ,  Minoru Yoshida ,  Chie Shishido ,  Yuji Takagi ,  Atsushi Yoshida ,  Kazuo Yamaguchi

IPC分类号： G06K9/00

CPC分类号： G06T7/001 ,  G01N21/9501 ,  G01N21/95607 ,  G06T7/0004 ,  G06T2207/30148

摘要： Arrangements for inspecting a specimen on which plural patterns are formed; capturing a first image of a first area; capturing a second image of a second area in which patterns which are essentially the same with the patterns formed in the first area; creating data relating to corresponding pixels of the first and second images, for each pixel; determining a threshold for each pixel for detecting defects directly in accordance with the first and second images; and detecting defects on the specimen by processing the first and second images by using the threshold for each pixel and information of a scattered diagram of brightness of the first and second images, wherein the threshold is determined by using information of brightness of a local region of at least one of the first and second images, with the local region including an aimed pixel and peripheral pixels of the aimed pixel.

摘要翻译： 用于检查形成多个图案的样本的布置; 捕获第一区域的第一图像; 捕获与形成在第一区域中的图案基本上相同的图案的第二区域的第二图像; 为每个像素创建与第一和第二图像的相应像素有关的数据; 根据第一和第二图像确定用于检测缺陷的每个像素的阈值; 以及通过使用每个像素的阈值和第一和第二图像的亮度的散射图的信息来处理第一和第二图像来检测样本上的缺陷，其中，通过使用第一和第二图像的局部区域的亮度的信息来确定阈值 第一和第二图像中的至少一个，其中局部区域包括目标像素和目标像素的外围像素。

公开(公告)号：US20120002861A1

公开(公告)日：2012-01-05

申请号：US13231394

申请日：2011-09-13

申请人： Tomofumi Nishiura ,  Atsushi Miyamoto ,  Chie Shishido ,  Takumichi Sutani

发明人： Tomofumi Nishiura ,  Atsushi Miyamoto ,  Chie Shishido ,  Takumichi Sutani

IPC分类号： G06K9/00

CPC分类号： G06T7/001 ,  G06K9/6255 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： An apparatus and method for inspecting a defect of a circuit pattern formed on a semiconductor wafer includes a defect classifier have a comparison shape forming section for forming a plurality of comparison shapes corresponding to an SEM image of an inspection region by deforming the shape of the circuit pattern in accordance with a plurality of shape deformation rules using design data corresponding to the circuit pattern within the inspection region and a shape similar to the SEM image of the inspection region out of the plurality of comparison shapes formed and selected as the comparison shape, and a shape comparing and classifying section for classifying the SEM image using information of the comparison shape selected in the comparison shape forming section and the inspection shape of the circuit pattern of the SEM image of the inspection region.

摘要翻译： 用于检查形成在半导体晶片上的电路图案的缺陷的装置和方法包括：缺陷分类器，具有比较形状形成部，用于通过使电路的形状变形来形成与检查区域的SEM图像对应的多个比较形状 使用与检查区域内的电路图案相对应的设计数据的多个形状变形规则的形状以及形成和选择为比较形状的多个比较形状中的检查区域的SEM图像的形状，以及 形状比较和分类部分，用于使用在比较形状形成部分中选择的比较形状的信息和检查区域的SEM图像的电路图案的检查形状来对SEM图像进行分类。

公开(公告)号：US07807980B2

公开(公告)日：2010-10-05

申请号：US11647348

申请日：2006-12-29

申请人： Chie Shishido ,  Mayuka Oosaki ,  Mitsugu Sato ,  Hiroki Kawada ,  Tatsuya Maeda

发明人： Chie Shishido ,  Mayuka Oosaki ,  Mitsugu Sato ,  Hiroki Kawada ,  Tatsuya Maeda

IPC分类号： G21K7/00 ,  A61N5/00 ,  G21G5/00

CPC分类号： H01J37/263 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/2826

摘要： The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses.

摘要翻译： 本发明提供一种用于测量捕获用于测量的图像的半导体装置等的微尺寸（CD值）的带电粒子束装置。 对于本发明，使用用于校准的样品，其上在视场中排列有通过晶体各向异性蚀刻技术产生的表面上具有已知角度的多个多面体结构物体。 基于每个多面体结构物体的图像上的几何变形来计算视野内的每个位置处的束着陆角。 用于均衡视场内每个位置的束着陆角的光束控制参数被预先注册。 当进行尺寸测量时，根据待测图案的位置在观察区域中应用登记的光束控制参数。 因此，本发明提供了减少相对于具有相同束着陆角的样品的电子束着角的变化引起的CD值的变化的方法，以及用于减少由电子差异引起的仪器误差的方法 设备之间的束着陆角度。