摘要:
A phase-change optical recording medium has a phase-change recording film to which recording and erasure can be reversibly performed by irradiation with light, and at least one dielectric film formed of a SiOC film containing Si, O and C, and having a carbon concentration within a range of between 0.1 and 30 atomic %.
摘要:
A hologram recording/reproducing apparatus includes a recording/reproducing optical system that guides at least one of an information beam and a reference beam to an optical recording medium; a spatial light modulator that is arranged in an optical path of the recording/reproducing optical system, and spatially modulates a beam guided via the recording/reproducing optical system to generate the information beam; a first misalignment detecting unit that detects a first misalignment between the recording/reproducing optical system and the spatial light modulator using a beam for detecting the first misalignment; and a first misalignment correcting unit that corrects the first misalignment based on the first misalignment detected by the first misalignment detecting unit.
摘要:
Disclosed is a holographic recording medium and methods of manufacturing the holographic recording medium. The example of the medium has a recording layer containing a three dimensionally cross-linked polymer matrix including an epoxy resin, a radically polymerizable monomer, and a photo radical polymerization initiator. The radically polymerizable monomer comprises both N-vinylcarbazole (VC) and N-vinylpyrrolidone (VP) or N-vinylcarbazole alone. The weight ratio of N-vinylcarbazole (VC) to the sum of N-vinylcarbazole (VC) and N-vinylpyrrolidone (VP), i.e., (VC/(VC+VP)), is not smaller than 0.75 and not larger than 1.0.
摘要:
According to one embodiment, a semiconductor memory device includes a plurality of cell array blocks and a control circuit. The control circuit sets a selected bit line to have 0 volt, applies a first electric potential which is higher than 0 volt to a selected word line, applies a second electric potential which is higher than 0 volt and lower than the first electric potential to non-selected word lines other than the selected word line, applies a third electric potential which is 0 volt or more and lower than the second electric potential to a non-selected bit line adjacent to the selected bit line in an adjacent cell array block, applies the second electric potential to non-selected bit lines other than the non-selected bit line to which the third electric potential is applied, and changes a resistance status of the resistance variable film of the selected memory cell.
摘要:
According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a plurality of memory cells, a plurality of wires, and a control circuit. The control circuit allows a first current to change a state to flow on a selected cell by applying a first potential difference between a pair of wires that sandwich the selected cell selected from the plurality of memory cells with respect to the semiconductor substrate vertically, and allows a second current lower than the first current to flow on an non-selected cell in the same direction as the direction of the first current by applying a second potential difference between a pair of wires that sandwich the non-selected cell connected to a wire shared with the selected cell on a different layer from the selected cell.
摘要:
According to one embodiment, a method for controlling a semiconductor device comprises determining a select bit number for a group of memory cells each includes a variable-resistance element, setting a first voltage corresponding to the select bit number, applying the set first voltage to the memory cell group, and performing verify read on the memory cell group to which the first voltage has been applied and determining whether or not the memory cell group passes the verify read. If the memory cell group is determined not to pass the verify read, the number of bits corresponding to passed memory cells is subtracted from the select bit number, and the first voltage corresponding to the decreased select bit number is set again.
摘要:
A nonvolatile semiconductor memory device in accordance with an embodiment comprises a plurality of first, second lines, a plurality of memory cells, and a control circuit. The plurality of second lines extend so as to intersect the first lines. The plurality of memory cells are disposed at intersections of the first, second lines, and each includes a variable resistor. The control circuit is configured to control a voltage applied to the memory cells. The control circuit applies a first pulse voltage to the variable resistor during a forming operation. In addition, the control circuit applies a second pulse voltage to the variable resistor during a setting operation, the second pulse voltage having a polarity opposite to the first pulse voltage. Furthermore, the control circuit applies a third pulse voltage to the variable resistor during a resetting operation, the third pulse voltage having a polarity identical to the first pulse voltage.
摘要:
A device receives ASK signals by using an ASK signal receiving circuit that is different from an ASK signal receiving circuit for R/W mode, when an NFC-enabled semiconductor device operates in a mode other than the R/W mode. An ASK signal receiving circuit for 100% ASK is provided on the side of a pair of transmitting terminals. This arrangement eliminates the influence of an ESD provided within an ASK signal receiving circuit for 10% ASK coupled to a pair of receiving terminals. There is no need for management of threshold values that are different according to type of ASK and it is possible to support different modulation schemes by a smaller circuit configuration.
摘要:
According to one embodiment, a method for controlling a semiconductor device comprises determining a select bit number for a group of memory cells each includes a variable-resistance element, setting a first voltage corresponding to the select bit number, applying the set first voltage to the memory cell group, and performing verify read on the memory cell group to which the first voltage has been applied and determining whether or not the memory cell group passes the verify read. If the memory cell group is determined not to pass the verify read, the number of bits corresponding to passed memory cells is subtracted from the select bit number, and the first voltage corresponding to the decreased select bit number is set again.
摘要:
A nonvolatile semiconductor memory device comprises: a plurality of first lines; a plurality of second lines; a plurality of memory cells each disposed at each of crossing-points of the first lines and the second lines and each comprising a variable resistor and a bi-directional diode; and a voltage control circuit configured to control a voltage of selected one of the first lines, unselected ones of the first lines, selected one of the second lines, and unselected ones of the second lines, respectively. The variable resistor is configured to change its resistance value depending on a polarity of a voltage applied thereto. The voltage control circuit is configured to apply a voltage pulse to the selected one of the first lines and to connect a capacitor of a certain capacitance to one end of the selected one of the second lines.