公开(公告)号：US08211348B2

公开(公告)日：2012-07-03

申请号：US12821429

申请日：2010-06-23

申请人： Norimasa Kuki ,  Yoshikane Akiyama ,  Mitiharu Hikosaka ,  Kazuhiko Kato ,  Kazumasa Sekido ,  Daisuke Ueda ,  Harumi Niwa ,  Hiroshi Itazu ,  Yuji Mizuno

发明人： Norimasa Kuki ,  Yoshikane Akiyama ,  Mitiharu Hikosaka ,  Kazuhiko Kato ,  Kazumasa Sekido ,  Daisuke Ueda ,  Harumi Niwa ,  Hiroshi Itazu ,  Yuji Mizuno

IPC分类号： B28B1/02

CPC分类号： F16F1/3842 ,  B21H1/18 ,  B21J5/00 ,  B21J5/008 ,  B21J5/12 ,  B21J9/025 ,  B21K21/12 ,  F16F1/3828 ,  F16F1/3863 ,  F16F2230/0035 ,  F16F2230/02

摘要： A method of manufacturing a cylindrical member having anti-slip projections formed on axial end faces, the method comprising the steps of: employing a roller die, which is provided with a circumferential die groove of annular form extending through a medial section in a generatrix direction of a die face defined by an integral tapered outside peripheral face, and with a plurality of sloping die grooves extending in a tapered slope direction of the die face situated to both large-diameter and small-diameter sides of the circumferential die groove; providing plastic working to the axial end face with the small-diameter side of the roller die facing towards an inner peripheral side of the cylindrical member and with the large-diameter side facing towards an outer peripheral side, by pushing the die face against the axial end face while rotating circumferentially; and forming simultaneously an annular water barrier projection and the anti-slip projections.

摘要翻译： 一种制造具有形成在轴向端面上的防滑突起的圆柱形构件的方法，所述方法包括以下步骤：使用辊模，其设置有沿母线方向延伸穿过中间部分的环形的周向模槽 具有由整体的锥形外周面限定的模具面，并且具有沿着位于周向模槽的大直径侧和小直径侧的模面的锥形倾斜方向延伸的多个倾斜模槽; 向所述轴向端面提供塑性加工，所述辊模的小直径侧朝向所述圆筒形构件的内周侧，并且所述大直径侧面向外周侧，通过将所述模具面朝向轴向 端面旋转; 同时形成环形防水突起和防滑突起。

公开(公告)号：US20120147725A1

公开(公告)日：2012-06-14

申请号：US13309088

申请日：2011-12-01

申请人： Daisuke Ueda ,  Kimihiro Saito ,  Hirotaka Miyamoto

发明人： Daisuke Ueda ,  Kimihiro Saito ,  Hirotaka Miyamoto

IPC分类号： G11B7/1374 ,  G11B7/127

CPC分类号： G11B7/083 ,  G11B7/00772 ,  G11B7/0908 ,  G11B7/0938 ,  G11B2007/0009

摘要： A reproducing apparatus includes: a first laser irradiation section irradiating an optical recording medium having a bulk recording layer and recording marks formed by focusing a laser beam on each predetermined layer position in the recording layer, with a first laser beam through an objective lens; a focus position adjusting section adjusting a focus position of the first laser beam; a beam receiving section receiving a reflected beam of the first laser beam from the marks and generating a light receiving signal; a reproducing section reproducing information recorded with the marks based on the light receiving signal; and a control section performing control to allow the focus position in reproduction of the information to correspond to a position shifted by a certain distance to an upper layer side from a focus position of the laser beam in forming the mark at the layer positions as a reproducing object.

摘要翻译： 一种再现装置，包括：第一激光照射部，照射具有体积记录层的光记录介质和通过将激光束聚焦在记录层中的每个预定层位置而形成的记录标记，第一激光束通过物镜; 调整第一激光束的聚焦位置的对焦位置调整部; 光束接收部分，从所述标记接收所述第一激光束的反射光束并产生光接收信号; 再现部分，根据光接收信号再现记录有标记的信息; 以及控制部，其执行控制，以使得所述信息的再现中的所述焦点位置对应于在形成所述层位置处的标记时作为再现的从形成所述标记的所述激光束的焦点位置向上层侧偏移一定距离的位置 目的。

公开(公告)号：US08129748B2

公开(公告)日：2012-03-06

申请号：US11878352

申请日：2007-07-24

申请人： Yasuhiro Uemoto ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Yasuhiro Uemoto ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/66

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7783

摘要： A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.

摘要翻译： 氮化物半导体器件包括：第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在所述第二氮化物半导体层上的第三氮化物半导体层。 位于栅电极下方的第三氮化物半导体层的区域形成有具有p型导电性的控制区域，以及位于栅电极与源电极和漏极之间的第三氮化物半导体层的区域 形成有具有比控制区域更高的电阻的高电阻区域。

公开(公告)号：US07974322B2

公开(公告)日：2011-07-05

申请号：US12686839

申请日：2010-01-13

申请人： Tetsuzo Ueda ,  Daisuke Ueda

发明人： Tetsuzo Ueda ,  Daisuke Ueda

IPC分类号： H01S5/00

CPC分类号： H01S5/32341 ,  H01S5/021 ,  H01S5/2201

摘要： A nitride semiconductor laser device includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor laminate that includes a plurality of semiconductor layers formed on the substrate and includes a multiple quantum well active layer, each of the plurality of semiconductor layers being made of group III-V nitride. The semiconductor laminate has a plane parallel to a {011} plane which is a plane orientation of silicon as a cleavage face and the cleavage face constructs a facet mirror.

摘要翻译： 氮化物半导体激光器件包括：由主表面的平面取向为{100}面的硅制成的衬底; 以及半导体层叠体，其具有形成在所述基板上的多个半导体层，所述半导体层叠体具有多量子阱活性层，所述多个半导体层中的每一个均由III-V族氮化物构成。 半导体层叠体具有与{011}平面平行的平面，其是作为解理面的硅的平面取向，并且切割面构成小平面镜。

公开(公告)号：US20110037101A1

公开(公告)日：2011-02-17

申请号：US12667999

申请日：2009-03-27

申请人： Kazushi Nakazawa ,  Toshiyuki Takizawa ,  Tetsuzo Ueda ,  Daisuke Ueda

发明人： Kazushi Nakazawa ,  Toshiyuki Takizawa ,  Tetsuzo Ueda ,  Daisuke Ueda

IPC分类号： H01L29/205 ,  H01L29/80 ,  H01L29/737 ,  H01L29/20

CPC分类号： H01L29/7371 ,  H01L27/0605 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/432 ,  H01L29/7787

摘要： A semiconductor device includes an undoped GaN layer (13), an undoped AlGaN layer (14), and a p-type GaN layer (15). In the p-type GaN layer (15), highly resistive regions (15a) are selectively formed. Resistance of the highly resistive regions (15a) can be increased by introducing a transition metal, for example, titanium.

摘要翻译： 半导体器件包括未掺杂的GaN层（13），未掺杂的AlGaN层（14）和p型GaN层（15）。 在p型GaN层（15）中，选择性地形成高电阻区域（15a）。 可以通过引入过渡金属例如钛来增加高电阻区域（15a）的电阻。

公开(公告)号：US20100327320A1

公开(公告)日：2010-12-30

申请号：US12879565

申请日：2010-09-10

申请人： Hiroaki Ueno ,  Manabu Yanagihara ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Hiroaki Ueno ,  Manabu Yanagihara ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/80

CPC分类号： H01L29/7783 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/432 ,  H01L29/452 ,  H01L29/7787

摘要： A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.

摘要翻译： 氮化物半导体器件包括：由第一氮化物半导体制成的第一半导体层; 第二半导体层，其形成在第一半导体层的主表面上并且由具有比第一氮化物半导体的带隙宽的第二氮化物半导体构成; 选择性地形成在所述第二半导体层的上部并且由上述第二半导体层的上部制成的具有p型导电性的第三氮化物半导体的控制层; 源极和漏极，形成在控制层的相应侧上的第二半导体层上; 形成在所述控制层上的栅电极; 以及形成在与所述主表面相对的所述第一半导体层的表面上的第四半导体层，所述第四半导体层相对于所述第一氮化物半导体具有价带中的势垒，并且由包含铝的第四氮化物半导体制成。

公开(公告)号：US07817081B2

公开(公告)日：2010-10-19

申请号：US12207123

申请日：2008-09-09

申请人： Kenichi Inoue ,  Daisuke Ueda

发明人： Kenichi Inoue ,  Daisuke Ueda

IPC分类号： G01S13/00 ,  G01S13/58 ,  G01S13/08 ,  H04B1/00 ,  H04K1/10 ,  H04L27/10 ,  H03D3/00

CPC分类号： G01S13/931 ,  G01S13/325 ,  G01S2013/9375 ,  G01S2013/9378 ,  G01S2013/9385

摘要： Provided is a radar apparatus that detects an object, and includes: an oscillating unit for generating carrier waves; first and second transmission units for spreading the carrier waves, respectively using a first pseudo-random code and a second pseudo-random code different from the first pseudo-random code; a first transmission antenna for transmitting the carrier waves spread by the first transmission unit; a second transmission antenna for transmitting the carrier waves spread by the second transmission unit and have a directional characteristic different from that of the carrier waves transmitted by the first transmission antenna; a reception antenna for receiving reflected waves that are the carrier waves that have been transmitted by the first and second transmission antennas and have been reflected from the object; and a reception unit for despreading the reflected waves, using the first pseudo-random code and despreading the reflected waves, using the second pseudo-random code.

摘要翻译： 提供一种检测物体的雷达装置，包括：用于产生载波的振荡单元; 分别使用与第一伪随机码不同的第一伪随机码和第二伪随机码扩展载波的第一和第二传输单元; 第一发送天线，用于发送由第一发送单元扩展的载波; 第二发送天线，用于发送由第二发送单元扩展的载波，并且具有与由第一发送天线发送的载波的方向特性不同的方向特性; 接收天线，用于接收作为由第一和第二发送天线发送并已从物体反射的载波的反射波; 以及接收单元，用于使用第一伪随机码解扩反射波，并使用第二伪随机码解扩反射波。

公开(公告)号：US07808169B2

公开(公告)日：2010-10-05

申请号：US11620076

申请日：2007-01-05

申请人： Yutaka Hirose ,  Daisuke Ueda

发明人： Yutaka Hirose ,  Daisuke Ueda

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01J1/304 ,  B82Y10/00 ,  H01J9/025 ,  H01J2201/30469 ,  Y10T29/49002

摘要： Provided is an electron emitting device which can achieve high electron emission efficiency even in the case where excitation energy is low. The device includes a carbon nanotube layer which is formed on an SiC substrate and is made up of plural carbon nanotubes vertically oriented with respect to a surface of the SiC substrate; an MgO layer which is formed on and touches the carbon nanotube layer; an ohmic electrode which is connected to the carbon nanotube layer; an electrode which is facing the MgO layer with an air-gap between the MgO layer and the electrode; and a voltage source which applies a voltage between the electrode and the ohmic electrode.

摘要翻译： 提供了即使在激发能量低的情况下也能够实现高电子发射效率的电子发射器件。 该装置包括碳纳米管层，其形成在SiC衬底上并且由相对于SiC衬底的表面垂直取向的多个碳纳米管构成; 形成在碳纳米管层上并与其接触的MgO层; 连接到碳纳米管层的欧姆电极; 在MgO层和电极之间具有气隙的面向MgO层的电极; 以及在电极和欧姆电极之间施加电压的电压源。

公开(公告)号：US20100237967A1

公开(公告)日：2010-09-23

申请号：US12681284

申请日：2008-07-29

申请人： Hiroaki Ueno ,  Hiroyuki Sakai ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Hiroaki Ueno ,  Hiroyuki Sakai ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01P3/08

CPC分类号： H01L21/02118 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/312 ,  H01L23/5222 ,  H01L23/5223 ,  H01L23/66 ,  H01L28/40 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2924/0002 ,  H01L2924/19032 ,  H01L2924/3011 ,  H01P3/003 ,  H01P3/081 ,  H01L2924/00

摘要： A circuit device includes a substrate 11, and a transmission line 10. The transmission line 10 includes a dielectric film 13 formed on the substrate 11, and a signal line formed on the dielectric film 13. The dielectric film 13 includes a nano-composite film in which particles of a first material are dispersed in a second material.

摘要翻译： 电路装置包括基板11和传输线10.传输线10包括形成在基板11上的电介质膜13和形成在电介质膜13上的信号线。电介质膜13包括纳米复合膜 其中第一材料的颗粒分散在第二材料中。

公开(公告)号：US20100212562A1

公开(公告)日：2010-08-26

申请号：US12656237

申请日：2010-01-21

申请人： Akifumi Nakashima ,  Daisuke Ueda

发明人： Akifumi Nakashima ,  Daisuke Ueda

IPC分类号： D05B23/00 ,  D05B21/00 ,  D05B69/00 ,  D05B29/00

CPC分类号： D05B55/06 ,  D05B23/00 ,  D05D2303/00

摘要： A workpiece processing attachment detachably attached to a sewing machine including a presser foot, a presser bar having the presser foot detachably attached to its lower end, a presser bar vertically moving mechanism, a sewing needle, a needle clamp having the sewing needle detachably attached thereto, a needle bar having the needle clamp attached thereto, and a needle bar vertically moving mechanism, the workpiece processing attachment, including a body detachably attached to the lower end of the presser bar; a connecting element capable of being connected to the needle clamp and movable up and down with the needle bar being moved up and down by the needle bar vertically moving mechanism; a needle penetrating the workpiece to form a hole in the workpiece; and a needle vertically moving mechanism moving the needle up and down by the up and down movement of the connecting element.

摘要翻译： 一种可拆卸地安装在缝纫机上的工件加工附件，该缝纫机包括压脚，压脚可拆卸地安装在其下端，压杆垂直移动机构，缝纫针，具有可拆卸地连接到其上的缝纫针的针夹 具有附接有针夹的针杆和针杆上下移动机构，所述工件加工附件包括可拆卸地附接到所述按压杆的下端的主体; 连接元件，其能够连接到针夹并且可通过针杆上下移动机构上下移动而上下移动; 针穿过工件在工件上形成一个孔; 并且针垂直移动机构通过连接元件的上下移动来上下移动针。