公开(公告)号：US08076698B2

公开(公告)日：2011-12-13

申请号：US11995040

申请日：2006-06-27

申请人： Daisuke Ueda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Masahiro Hikita ,  Hiroaki Ueno

发明人： Daisuke Ueda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Masahiro Hikita ,  Hiroaki Ueno

IPC分类号： H01L31/0328

CPC分类号： H01L29/739 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7786

摘要： In a transistor, an AlN buffer layer 102, an undoped GaN layer 103, an undoped AlGaN layer 104, a p-type control layer 105, and a p-type contact layer 106 are formed in this order on a sapphire substrate 101. The transistor further includes a gate electrode 110 in ohmic contact with the p-type contact layer 106, and a source electrode 108 and a drain electrode 109 provided on the undoped AlGaN layer 104. By applying a positive voltage to the p-type control layer 105, holes are injected into a channel to increase a current flowing in the channel.

摘要翻译： 在晶体管中，在蓝宝石衬底101上依次形成AlN缓冲层102，未掺杂的GaN层103，未掺杂的AlGaN层104，p型控制层105和p型接触层106。 晶体管还包括与p型接触层106欧姆接触的栅电极110以及设置在未掺杂的AlGaN层104上的源电极108和漏极109.通过向p型控制层105施加正电压 ，孔被注入到通道中以增加在通道中流动的电流。

公开(公告)号：US07825434B2

公开(公告)日：2010-11-02

申请号：US11647218

申请日：2006-12-29

申请人： Hiroaki Ueno ,  Manabu Yanagihara ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Hiroaki Ueno ,  Manabu Yanagihara ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/08

CPC分类号： H01L29/7783 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/432 ,  H01L29/452 ,  H01L29/7787

摘要： A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.

摘要翻译： 氮化物半导体器件包括：由第一氮化物半导体制成的第一半导体层; 第二半导体层，其形成在第一半导体层的主表面上并且由具有比第一氮化物半导体的带隙宽的第二氮化物半导体构成; 选择性地形成在所述第二半导体层的上部并且由上述第二半导体层的上部制成的具有p型导电性的第三氮化物半导体的控制层; 源极和漏极，形成在控制层的相应侧上的第二半导体层上; 形成在所述控制层上的栅电极; 以及第四半导体层，形成在与所述主表面相对的所述第一半导体层的表面上，相对于所述第一氮化物半导体具有价带中的势垒，并且由包含铝的第四氮化物半导体构成。

公开(公告)号：US20070205407A1

公开(公告)日：2007-09-06

申请号：US11712482

申请日：2007-03-01

申请人： Hisayoshi Matsuo ,  Tatsuo Morita ,  Tetsuzo Ueda ,  Daisuke Ueda

发明人： Hisayoshi Matsuo ,  Tatsuo Morita ,  Tetsuzo Ueda ,  Daisuke Ueda

IPC分类号： H01L29/06

CPC分类号： H01L29/045 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/12

摘要： A nitride semiconductor device includes a semiconductor stacked structure which is formed of a nitride semiconductor having a first principal surface and a second principal surface opposed to the first principal surface and which includes an active layer. The first principal surface of the semiconductor stacked structure is formed with a plurality of indentations whose plane orientations are the {0001} plane, and the plane orientation of the second principal surface is the {1-101} plane. The active layer is formed along the {1-101} plane.

摘要翻译： 氮化物半导体器件包括半导体层叠结构，其由具有第一主表面和与第一主表面相对并包括有源层的第二主表面的氮化物半导体形成。 半导体堆叠结构的第一主表面形成有多个平面取向为{0001}面并且第二主面的平面取向为{1-101}面的凹陷。 有源层沿{1-101}面形成。

公开(公告)号：US20070058982A1

公开(公告)日：2007-03-15

申请号：US11519973

申请日：2006-09-13

申请人： Toshikazu Onishi ,  Tetsuzo Ueda ,  Daisuke Ueda

发明人： Toshikazu Onishi ,  Tetsuzo Ueda ,  Daisuke Ueda

IPC分类号： H04B10/00

CPC分类号： H01S5/18355 ,  B82Y20/00 ,  H01L31/035281 ,  H01L31/105 ,  H01S5/02284 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18319 ,  H01S5/18344 ,  H01S5/18358 ,  H01S5/18386 ,  H01S5/3432 ,  H01S5/423 ,  Y02E10/50

摘要： A surface emitting laser includes a plurality of light-emitting portions for emitting laser light beams in different linearly polarized light directions. The light-emitting portions are formed on the substrate and located close to each other. The light-emitting portions include metal opening arrays through which light beams in different linearly polarized light directions respectively pass.

摘要翻译： 表面发射激光器包括用于在不同的线偏振光方向上发射激光束的多个发光部分。 发光部分形成在基板上并且彼此靠近。 发光部分包括分别通过不同线偏振光方向的光束的金属开口阵列。

公开(公告)号：US20050029646A1

公开(公告)日：2005-02-10

申请号：US10912136

申请日：2004-08-06

申请人： Tetsuzo Ueda ,  Daisuke Ueda

发明人： Tetsuzo Ueda ,  Daisuke Ueda

IPC分类号： G01K1/08 ,  H01J3/14 ,  H01L21/301 ,  H01L21/304 ,  H01L21/78 ,  H01L23/22 ,  H01L33/00

CPC分类号： H01L21/78 ,  H01L21/3043 ,  H01L33/0095

摘要： The object of the present invention is to provide a semiconductor device and a method for dividing a substrate which are capable of preventing chips from breaking and manufacturing chips in a reproducible square-like form. After the surface of the epitaxial growth layer 2 of the end part of the nitride semiconductor wafer is linear-scanned a plurality of times by the electron beam 3 so that scanning lines are parallel, the scribe line 4 is formed. Then, the edge jig 5 is put on the scribe line 4. And, the back surface of the SiC substrate 1 is pressed by the edge jig 6.

摘要翻译： 本发明的目的是提供一种能够防止芯片破碎和制造可重现的正方形芯片的基板的半导体器件和方法。 在氮化物半导体晶片的端部的外延生长层2的表面被电子束3多次扫描以使扫描线平行之后，形成刻划线4。 然后，将边缘夹具5放在划线4上。并且，SiC基板1的背面被边缘夹具6按压。

公开(公告)号：US08390029B2

公开(公告)日：2013-03-05

申请号：US12867427

申请日：2009-01-23

申请人： Hidekazu Umeda ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Hidekazu Umeda ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/00

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/432 ,  H01L29/66462

摘要： A semiconductor device includes an undoped GaN layer (103) formed on a substrate (101), an undoped AlGaN layer (104) formed on the undoped GaN layer (103) and having a band gap energy larger than that of the undoped GaN layer (103), a p-type AlGaN layer (105) and a high-concentration p-type GaN layer (106) formed on the undoped AlGaN layer (104), and an n-type AlGaN layer (107) formed on the high-concentration p-type GaN layer (106). A gate electrode (112) which makes ohmic contact with the high-concentration p-type GaN layer (106) is formed on the high-concentration p-type GaN layer (106) in a region thereof exposed through an opening (107a) formed in the n-type AlGaN layer (107).

摘要翻译： 半导体器件包括形成在衬底（101）上的未掺杂的GaN层（103），形成在未掺杂的GaN层（103）上并且具有比未掺杂的GaN层的带隙能量大的带隙能量的未掺杂的AlGaN层（104） 103），形成在未掺杂的AlGaN层（104）上的p型AlGaN层（105）和高浓度p型GaN层（106）以及形成在高掺杂AlGaN层上的n型AlGaN层（107） 浓度p型GaN层（106）。 在高浓度p型GaN层（106）上形成与高浓度p型GaN层（106）欧姆接触的栅电极（112），其形成在通过形成的开口（107a）的部分露出的区域 在n型AlGaN层（107）中。

公开(公告)号：US08129748B2

公开(公告)日：2012-03-06

申请号：US11878352

申请日：2007-07-24

申请人： Yasuhiro Uemoto ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Yasuhiro Uemoto ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/66

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7783

摘要： A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.

摘要翻译： 氮化物半导体器件包括：第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在所述第二氮化物半导体层上的第三氮化物半导体层。 位于栅电极下方的第三氮化物半导体层的区域形成有具有p型导电性的控制区域，以及位于栅电极与源电极和漏极之间的第三氮化物半导体层的区域 形成有具有比控制区域更高的电阻的高电阻区域。

公开(公告)号：US07974322B2

公开(公告)日：2011-07-05

申请号：US12686839

申请日：2010-01-13

申请人： Tetsuzo Ueda ,  Daisuke Ueda

发明人： Tetsuzo Ueda ,  Daisuke Ueda

IPC分类号： H01S5/00

CPC分类号： H01S5/32341 ,  H01S5/021 ,  H01S5/2201

摘要： A nitride semiconductor laser device includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor laminate that includes a plurality of semiconductor layers formed on the substrate and includes a multiple quantum well active layer, each of the plurality of semiconductor layers being made of group III-V nitride. The semiconductor laminate has a plane parallel to a {011} plane which is a plane orientation of silicon as a cleavage face and the cleavage face constructs a facet mirror.

摘要翻译： 氮化物半导体激光器件包括：由主表面的平面取向为{100}面的硅制成的衬底; 以及半导体层叠体，其具有形成在所述基板上的多个半导体层，所述半导体层叠体具有多量子阱活性层，所述多个半导体层中的每一个均由III-V族氮化物构成。 半导体层叠体具有与{011}平面平行的平面，其是作为解理面的硅的平面取向，并且切割面构成小平面镜。

公开(公告)号：US20110037101A1

公开(公告)日：2011-02-17

申请号：US12667999

申请日：2009-03-27

申请人： Kazushi Nakazawa ,  Toshiyuki Takizawa ,  Tetsuzo Ueda ,  Daisuke Ueda

发明人： Kazushi Nakazawa ,  Toshiyuki Takizawa ,  Tetsuzo Ueda ,  Daisuke Ueda

IPC分类号： H01L29/205 ,  H01L29/80 ,  H01L29/737 ,  H01L29/20

CPC分类号： H01L29/7371 ,  H01L27/0605 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/432 ,  H01L29/7787

摘要： A semiconductor device includes an undoped GaN layer (13), an undoped AlGaN layer (14), and a p-type GaN layer (15). In the p-type GaN layer (15), highly resistive regions (15a) are selectively formed. Resistance of the highly resistive regions (15a) can be increased by introducing a transition metal, for example, titanium.

摘要翻译： 半导体器件包括未掺杂的GaN层（13），未掺杂的AlGaN层（14）和p型GaN层（15）。 在p型GaN层（15）中，选择性地形成高电阻区域（15a）。 可以通过引入过渡金属例如钛来增加高电阻区域（15a）的电阻。

公开(公告)号：US20100327320A1

公开(公告)日：2010-12-30

申请号：US12879565

申请日：2010-09-10

申请人： Hiroaki Ueno ,  Manabu Yanagihara ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Hiroaki Ueno ,  Manabu Yanagihara ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/80

CPC分类号： H01L29/7783 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/432 ,  H01L29/452 ,  H01L29/7787

摘要： A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.

摘要翻译： 氮化物半导体器件包括：由第一氮化物半导体制成的第一半导体层; 第二半导体层，其形成在第一半导体层的主表面上并且由具有比第一氮化物半导体的带隙宽的第二氮化物半导体构成; 选择性地形成在所述第二半导体层的上部并且由上述第二半导体层的上部制成的具有p型导电性的第三氮化物半导体的控制层; 源极和漏极，形成在控制层的相应侧上的第二半导体层上; 形成在所述控制层上的栅电极; 以及形成在与所述主表面相对的所述第一半导体层的表面上的第四半导体层，所述第四半导体层相对于所述第一氮化物半导体具有价带中的势垒，并且由包含铝的第四氮化物半导体制成。