MCP unit, MCP detector and time of flight mass spectrometer
    41.
    发明申请
    MCP unit, MCP detector and time of flight mass spectrometer 有权
    MCP单元,MCP检测器和飞行时间质谱仪

    公开(公告)号:US20080290267A1

    公开(公告)日:2008-11-27

    申请号:US11802771

    申请日:2007-05-24

    IPC分类号: H01J43/02 H01J49/40

    CPC分类号: H01J43/246 H01J49/025

    摘要: The present invention relates to an MCP unit or the like having a structure intended to achieve a desired time response characteristic, without depending on a limitation imposed by a channel diameter of MCP. The MCP unit comprises the MCP for releasing secondary electrons internally multiplied in response to incidence of charged particles, an anode arranged in a position where the secondary electrons reach, and an acceleration electrode arranged between the MCP and the anode. In particular, the acceleration electrode includes a plurality of openings which permit passing of the secondary electrons migrating from the MCP toward the anode. Further, the acceleration electrode is arranged such that the shortest distance B between the acceleration electrode and the anode is longer than the shortest distance A between the MCP and the acceleration electrode. Thus, an FWHM of a detected peak appearing in response to the incidence of the charged particles is remarkably shortened.

    摘要翻译: 本发明涉及具有旨在实现所需时间响应特性的结构的MCP单元等,而不依赖于MCP的通道直径所施加的限制。 MCP单元包括MCP,用于响应于带电粒子的入射而布置二次电子的内部倍增的电子,设置在二次电子到达的位置的阳极以及布置在MCP和阳极之间的加速电极。 特别地,加速电极包括允许二次电子从MCP向阳极迁移的多个开口。 此外,加速电极被布置成使得加速电极和阳极之间的最短距离B比MCP和加速电极之间的最短距离A长。 因此,响应于带电粒子的入射出现的检测峰的FWHM显着缩短。

    Wiring substrate and radiation detector using same
    42.
    发明授权
    Wiring substrate and radiation detector using same 失效
    接线基板和辐射探测器使用相同

    公开(公告)号:US07326907B2

    公开(公告)日:2008-02-05

    申请号:US10541616

    申请日:2004-01-08

    IPC分类号: H01L31/00 H01L23/48 G01T1/20

    摘要: A wiring substrate section 2, which has a wiring substrate 20 with through holes 20c each filled with a conductive member 21 serving as a conduction path for guiding a detected signal, is installed between a radiation detecting section 1 comprised of a scintillator 10 and a PD array 15, and a signal processing element 30 for processing the detected signals outputted from the PD array 15. Each through hole 20c in the wiring substrate 20 is formed so that, with respect to a predetermined plane perpendicular to a conduction direction from an input surface 20a to an output surface 20b, an aperture of the through hole 20c in that plane is not on an extension along the conduction direction of an aperture of the through hole 20c in the input surface 20a and so that the through hole 20c cannot be seen through from the input surface 20a to the output surface 20b. This obtains the wiring substrate capable of suppressing transmission of radiation, and a radiation detector using it.

    摘要翻译: 具有布线基板20的布线基板20安装在由闪烁体10和闪光体10构成的放射线检测部1之间,该布线基板20具有通孔20c,每个通孔20均填充有用作引导检测信号的导电路径的导电部件21。 PD阵列15和用于处理从PD阵列15输出的检测信号的信号处理元件30。 布线基板20中的每个通孔20c形成为使得相对于从输入表面20a到输出表面20b的与导电方向垂直的预定平面,在该平面中的通孔20c的孔 沿着输入面20a中的通孔20c的孔的导通方向不在延伸部上,从而从输入面20a到输出面20b不能看到通孔20c。 这获得了能够抑制辐射透射的布线基板和使用它的放射线检测器。

    Wiring substrate and radiation detector using same
    43.
    发明申请
    Wiring substrate and radiation detector using same 失效
    接线基板和辐射探测器使用相同

    公开(公告)号:US20060267195A1

    公开(公告)日:2006-11-30

    申请号:US10541616

    申请日:2004-01-08

    IPC分类号: H01L23/48

    摘要: A wiring substrate section 2, which has a wiring substrate 20 with through holes 20c each filled with a conductive member 21 serving as a conduction path for guiding a detected signal, is installed between a radiation detecting section 1 comprised of a scintillator 10 and a PD array 15, and a signal processing element 30 for processing the detected signals outputted from the PD array 15. Each through hole 20c in the wiring substrate 20 is formed so that, with respect to a predetermined plane perpendicular to a conduction direction from an input surface 20a to an output surface 20b, an aperture of the through hole 20c in that plane is not on an extension along the conduction direction of an aperture of the through hole 20c in the input surface 20a and so that the through hole 20c cannot be seen through from the input surface 20a to the output surface 20b. This obtains the wiring substrate capable of suppressing transmission of radiation, and a radiation detector using it.

    摘要翻译: 具有布线基板20的布线基板20安装在由闪烁体10和闪光体10构成的放射线检测部1之间,该布线基板20具有通孔20c,每个通孔20均填充有用作引导检测信号的导电路径的导电部件21。 PD阵列15和用于处理从PD阵列15输出的检测信号的信号处理元件30。 布线基板20中的每个通孔20c形成为使得相对于从输入表面20a到输出表面20b的与导电方向垂直的预定平面,在该平面中的通孔20c的孔 沿着输入面20a中的通孔20c的孔的导通方向不在延伸部上,从而从输入面20a到输出面20b不能看到通孔20c。 这获得了能够抑制辐射透射的布线基板和使用它的放射线检测器。

    Semiconductor device and method for manufacturing the same
    44.
    发明申请
    Semiconductor device and method for manufacturing the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号:US20050045983A1

    公开(公告)日:2005-03-03

    申请号:US10899298

    申请日:2004-07-26

    摘要: A semiconductor device is provided that includes a semiconductor layer, first element isolation regions defining a high breakdown voltage transistor forming region in the semiconductor layer, second element isolation regions defining a low voltage driving transistor forming region in the semiconductor layer, high breakdown voltage transistors formed in the high breakdown voltage transistor forming region, low voltage driving transistors formed in the low voltage driving transistor forming region, and offset dielectric layers for alleviating an electric field of the high breakdown voltage transistors, wherein the high breakdown voltage transistors have gate dielectric layers formed by a CVD method.

    摘要翻译: 提供一种半导体器件,其包括半导体层,在半导体层中限定高击穿电压晶体管形成区域的第一元件隔离区域,限定半导体层中的低电压驱动晶体管形成区域的第二元件隔离区域,形成的高击穿电压晶体管 在高击穿电压晶体管形成区域中,形成在低电压驱动晶体管形成区域中的低电压驱动晶体管,以及用于减轻高击穿电压晶体管的电场的偏移电介质层,其中高击穿电压晶体管形成栅极电介质层 通过CVD法。

    Method for preparing optically active carboxylic acid esters
    49.
    发明授权
    Method for preparing optically active carboxylic acid esters 失效
    光学活性羧酸酯的制备方法

    公开(公告)号:US4422978A

    公开(公告)日:1983-12-27

    申请号:US313089

    申请日:1981-10-20

    CPC分类号: C07C255/00

    摘要: A method for preparing an optically active carboxylic acid ester of the formula (I): ##STR1## wherein X is a hydrogen atom or a fluorine atom, and * indicates an asymmetric carbon atom, which is an A.alpha.-isomer having an (S)-configuration on both the acid and alcohol moieties, or rich in said A.alpha.-isomer, which method comprises crystallizing said A.alpha.-isomer from a solution of an A-isomer of the formula (I) having an (S)-configuration on the acid moiety in the presence of a crystal that is of substantially pure A.alpha.-isomer and in the presence or absence of a basic catalyst.

    摘要翻译: 一种制备式(I)的光学活性羧酸酯的方法:其中X是氢原子或氟原子,和*表示不对称碳原子,其是具有 在酸和醇部分上的(S) - 构型或富含所述Aα-异构体的方法,该方法包括从具有(S)的式(I)的α-异构体的溶液中使所述Aα-异构体结晶 ) - 在基本上存在基本上纯的Aα-异构体的晶体存在下,并且在存在或不存在碱性催化剂的情况下在酸部分上形成。

    Manufacturing method of group 13 nitride crystal
    50.
    发明授权
    Manufacturing method of group 13 nitride crystal 有权
    13族氮化物晶体的制造方法

    公开(公告)号:US09404196B2

    公开(公告)日:2016-08-02

    申请号:US13592555

    申请日:2012-08-23

    IPC分类号: C30B9/10 C30B9/12 C30B29/40

    CPC分类号: C30B9/12 C30B9/10 C30B29/406

    摘要: A method of manufacturing a group 13 nitride crystal includes a crystal growth process to form the group 13 nitride crystal by growing the group 13 nitride crystal having a hexagonal crystal structure from a seed crystal which is a gallium nitride crystal having a hexagonal crystal structure in which a length “L” in a c-axis direction is 9.7 mm or more, and a ratio L/d of the length “L” to a crystal diameter “d” in a c-plane is larger than 0.813. The crystal growth process includes a process of forming an outer periphery containing a {10-10} plane and an outer periphery containing a {10-11} plane at side surfaces of the group 13 nitride crystal, and forming an outer periphery containing a {0001} plane at a bottom surface of the group 13 nitride crystal.

    摘要翻译: 制造13族氮化物晶体的方法包括通过从具有六方晶系结构的氮化镓晶体的晶种生长具有六方晶系结构的13族氮化物晶体来形成氮化镓族晶体的晶体生长工艺,其中 c轴方向的长度“L”为9.7mm以上,c面中的长度“L”与晶体直径“d”的比率L / d大于0.813。 晶体生长工艺包括在第13族氮化物晶体的侧面形成包含{10-10}面和包含{10-11}面的外周的外周的工艺,并且形成含有{ 0001}面。