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41.发明授权Integrated circuit device and method for manufacturing integrated circuit device 有权集成电路器件及集成电路器件制造方法公开(公告)号：US07485511B2
公开(公告)日：2009-02-03
申请号：US11440128
申请日：2006-05-25
IPC分类号： H01L21/84
CPC分类号： H01L27/1266 , H01L27/124 , H01L27/1292 , H01L27/1296 , H01L29/78621 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81001 , H01L2924/00
摘要： An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.
摘要翻译： 本发明的目的是提供薄膜电路部分的结构和薄膜电路部分的制造方法，通过该薄膜电路部分可以容易地在薄膜电路下形成用于连接到外部的电极。 包括第一绝缘膜，在第一绝缘膜的一个表面上形成的薄膜电路，形成在薄膜电路上的第二绝缘膜，形成在第二绝缘膜上的电极和形成在第二绝缘膜上的树脂膜的层叠体 电极。 导电膜与层叠体的第一绝缘膜的另一表面相邻地形成为与电极重叠。 用激光照射导电膜。
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公开(公告)号：US08999818B2
公开(公告)日：2015-04-07
申请号：US12342153
申请日：2008-12-23
IPC分类号： H01L21/00 , H01L27/146 , H01L27/12
CPC分类号： H01L27/1214 , H01L27/12 , H01L27/14687 , H01L27/14692
摘要： A semiconductor element is formed on a first surface of the substrate. A resin layer is formed over a second surface of the substrate which is opposite to the first surface of the substrate and on a part of the side surface of the substrate. A step is formed on the side surface of the substrate. The width of the upper section of the substrate with a step is narrower than the lower section of the substrate with a step. Therefore, the substrate can also be a protrusion.
摘要翻译： 半导体元件形成在基板的第一表面上。 在基板的与基板的第一表面相对的第二表面上和基板的侧表面的一部分上形成树脂层。 在基板的侧面上形成台阶。 具有台阶的基板的上部的宽度比基板的下部的台阶窄。 因此，基板也可以是突起。
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公开(公告)号：US08362485B2
公开(公告)日：2013-01-29
申请号：US13308582
申请日：2011-12-01
IPC分类号： H01L29/04
CPC分类号： H01L27/1266 , H01L27/124 , H01L27/1292 , H01L27/1296 , H01L29/78621 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81001 , H01L2924/00
摘要： An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.
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公开(公告)号：US08324079B2
公开(公告)日：2012-12-04
申请号：US12355069
申请日：2009-01-16
IPC分类号： H01L21/46
CPC分类号： H01L31/0232 , H01L27/1214 , H01L27/1266 , H01L27/1277 , H01L27/1462 , H01L31/02162 , H01L2224/11
摘要： A semiconductor device in which the damage such as cracks, chinks, or dents caused by external stress is reduced is provided. In addition, the yield of a semiconductor device having a small thickness is increased. The semiconductor device includes a light-transmitting substrate having a stepped side surface, the width of which in a portion above the step and closer to one surface is smaller than that in a portion below the step, a semiconductor element layer provided over the other surface of the light-transmitting substrate, and a stack of a first light-transmitting resin layer and a second light-transmitting resin layer, which covers the one surface and part of the side surface of the light-transmitting substrate. One of the first light-transmitting resin layer and the second light-transmitting resin layer has a chromatic color.
摘要翻译： 提供了其中由外部应力引起的诸如裂纹，凹陷或凹痕的损伤减小的半导体器件。 此外，具有小厚度的半导体器件的产量增加。 半导体器件包括具有台阶侧表面的透光衬底，其宽度在台阶之上的部分中并且更接近一个表面的透光衬底小于在该阶梯下方的部分的透光衬底;设置在另一表面上的半导体元件层 以及覆盖透光性基板的一侧面和一部分的第一透光性树脂层和第二透光性树脂层的层叠体。 第一透光树脂层和第二透光树脂层中的一个具有彩色。
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公开(公告)号：US08049292B2
公开(公告)日：2011-11-01
申请号：US12404376
申请日：2009-03-16
申请人： Hidekazu Takahashi , Daiki Yamada , Yohei Monma , Takahiro Iguchi , Hiroki Adachi , Shunpei Yamazaki
发明人： Hidekazu Takahashi , Daiki Yamada , Yohei Monma , Takahiro Iguchi , Hiroki Adachi , Shunpei Yamazaki
IPC分类号： H01L31/048
CPC分类号： H01L27/14625 , H01L27/14806 , H01L31/075
摘要： A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.
摘要翻译： 半导体器件包括多个半导体集成电路，该多个半导体集成电路与结构体结合，纤维体浸渍有机树脂。 多个半导体集成电路设置在形成在结构体中的开口处，并且各自包括光电转换元件，具有阶梯侧的透光基板，第一表面侧的突出部的宽度小于 设置在透光基板的第二表面上的半导体集成电路部分和覆盖透光基板的第一表面和侧表面的彩色透光树脂层。 多个半导体集成电路包括不同颜色的彩色透光树脂层。
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公开(公告)号：US20060267204A1
公开(公告)日：2006-11-30
申请号：US11436090
申请日：2006-05-18
IPC分类号： H01L23/48
CPC分类号： H01L23/66 , H01L23/49855 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.
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公开(公告)号：US08508027B2
公开(公告)日：2013-08-13
申请号：US12555832
申请日：2009-09-09
IPC分类号： H01L23/552
CPC分类号： H01L23/66 , H01L23/49855 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.
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48.发明授权Integrated circuit device and method for manufacturing integrated circuit device 有权集成电路器件及集成电路器件制造方法公开(公告)号：US07816685B2
公开(公告)日：2010-10-19
申请号：US12342446
申请日：2008-12-23
IPC分类号： H01L29/04
CPC分类号： H01L27/1266 , H01L27/124 , H01L27/1292 , H01L27/1296 , H01L29/78621 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81001 , H01L2924/00
摘要： An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.
摘要翻译： 本发明的目的是提供薄膜电路部分的结构和薄膜电路部分的制造方法，通过该薄膜电路部分可以容易地在薄膜电路下形成用于连接到外部的电极。 包括第一绝缘膜，在第一绝缘膜的一个表面上形成的薄膜电路，形成在薄膜电路上的第二绝缘膜，形成在第二绝缘膜上的电极和形成在第二绝缘膜上的树脂膜的层叠体 电极。 导电膜与层叠体的第一绝缘膜的另一表面相邻地形成为与电极重叠。 用激光照射导电膜。
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公开(公告)号：US07897483B2
公开(公告)日：2011-03-01
申请号：US12339128
申请日：2008-12-19
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2924/12044 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： Objects are to reduce damage to a semiconductor integrated circuit by external stress and to increase the manufacturing yield of a thinned semiconductor integrated circuit. A single crystal semiconductor layer separated from a single crystal semiconductor substrate is used for a semiconductor element included in the semiconductor integrated circuit. Moreover, a substrate which is formed into a thin shape and provided with the semiconductor integrated circuit is covered with a resin layer. In a separation step, a groove for separating a semiconductor element layer is formed in the supporting substrate, and a resin layer is provided over the supporting substrate in which the groove is formed. After that, the resin layer and the supporting substrate are cut in the groove so as to be divided into a plurality of semiconductor integrated circuits.
摘要翻译： 目的是通过外部应力减少半导体集成电路的损坏，并增加薄型半导体集成电路的制造成品率。 与单晶半导体衬底分离的单晶半导体层用于半导体集成电路中所包含的半导体元件。 此外，形成为薄形并且设置有半导体集成电路的基板被树脂层覆盖。 在分离工序中，在支撑基板上形成用于分离半导体元件层的槽，在形成有槽的支撑基板上设置树脂层。 之后，将树脂层和支撑基板切割成槽，以分成多个半导体集成电路。
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公开(公告)号：US08507308B2
公开(公告)日：2013-08-13
申请号：US13244397
申请日：2011-09-24
申请人： Hidekazu Takahashi , Daiki Yamada , Yohei Monma , Takahiro Iguchi , Hiroki Adachi , Shunpei Yamazaki
发明人： Hidekazu Takahashi , Daiki Yamada , Yohei Monma , Takahiro Iguchi , Hiroki Adachi , Shunpei Yamazaki
IPC分类号： H01L31/18
CPC分类号： H01L27/14625 , H01L27/14806 , H01L31/075
摘要： A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.
摘要翻译： 半导体器件包括多个半导体集成电路，该多个半导体集成电路与结构体结合，纤维体浸渍有机树脂。 多个半导体集成电路设置在形成在结构体中的开口处，并且各自包括光电转换元件，具有阶梯侧的透光基板，第一表面侧的突出部的宽度小于 设置在透光基板的第二表面上的半导体集成电路部分和覆盖透光基板的第一表面和侧表面的彩色透光树脂层。 多个半导体集成电路包括不同颜色的彩色透光树脂层。
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