公开(公告)号：US20080012049A1

公开(公告)日：2008-01-17

申请号：US11660514

申请日：2005-03-11

申请人： Daisuke Niwa ,  Tetsuya Osaka

发明人： Daisuke Niwa ,  Tetsuya Osaka

IPC分类号： H01L29/78

CPC分类号： G01N27/414

摘要： A semiconductor sensing field effect transistor uses an organic unimolecular film formed on a gate insulating layer. In the semiconductor sensing field effect transistor and a semiconductor sensing device, the gate insulating layer has a stack structure wherein a second silicon oxide layer is stacked on a first silicon oxide layer through a silicon nitride layer. A semiconductor sensor chip and the semiconductor sensing device are provided with a field effect transistor chip wherein the gate insulating layer, a source electrode and a drain electrode are integrated on a silicon board, a source electrode terminal wiring connected with the source electrode, and a drain electrode terminal wiring connected with the drain electrode. In the semiconductor sensor chip and the semiconductor sensing device, the transistor chip, the source electrode terminal wiring and the drain electrode terminal wiring are sealed so as to expose an edge part which is not connected with the gate insulating layer of the transistor chip and the source electrode of the source electrode terminal wiring, and an edge part which is not connected with the drain electrode of the drain electrode terminal wiring.

摘要翻译： 半导体感测场效应晶体管使用形成在栅极绝缘层上的有机单分子膜。 在半导体感测场效应晶体管和半导体感测装置中，栅极绝缘层具有堆叠结构，其中第二氧化硅层通过氮化硅层堆叠在第一氧化硅层上。 半导体传感器芯片和半导体感测装置设置有场效应晶体管芯片，其中栅极绝缘层，源电极和漏电极集成在硅板上，源极端子布线与源极连接，以及 漏极端子布线与漏电极连接。 在半导体传感器芯片和半导体感测装置中，晶体管芯片，源极端子布线和漏极端子布线被密封，以暴露未与晶体管芯片的栅极绝缘层连接的边缘部分和 源电极端子配线的源电极以及未与漏电极端子配线的漏电极连接的边缘部。

公开(公告)号：US20070095440A1

公开(公告)日：2007-05-03

申请号：US11529537

申请日：2006-09-29

申请人： Kazutaka Senda ,  Masaru Kato ,  Tetsuya Osaka ,  Yutaka Okinaka

发明人： Kazutaka Senda ,  Masaru Kato ,  Tetsuya Osaka ,  Yutaka Okinaka

IPC分类号： C22C45/00 ,  C22C5/02

CPC分类号： C22C5/02 ,  B32B15/018 ,  C22C9/00 ,  C22C45/003 ,  C22C45/02 ,  C25D3/562 ,  C25D3/62 ,  C25D7/00 ,  H01H1/023 ,  H01R13/03 ,  H05K3/244

摘要： A gold-cobalt based amorphous alloy plated film consisting of a homogeneous amorphous phase not having microcrystals is formed by electroplating conducted by use of an electroplating bath containing a gold cyanide salt in a concentration of 0.01 to 0.1 mol/dm3 in terms of gold, a cobalt salt in a concentration of 0.02 to 0.2 mol/dm3 in terms of cobalt, and a tungstate in a concentration of 0.1 to 0.5 mol/dm3 in terms of tungsten. The gold-cobalt based amorphous alloy plated film obtained consists of a homogeneous amorphous phase not having microcrystals, and has an enhanced hardness while retaining the good contact resistance and chemical stability intrinsic of gold on such levels as to be free of problems on a practical use basis; therefore, the gold-cobalt based amorphous alloy plated film is effective for use as a contact material in electric and electronic component parts such as relays.

摘要翻译： 通过使用含有浓度为0.01〜0.1mol / dm 3的金氰化物盐的电镀浴进行电镀，形成由不具有微晶的均匀非晶相组成的金钴系非晶合金镀膜， SUP>以金为基准，钴浓度为0.02〜0.2mol / dm 3的钴盐，钴浓度为0.1〜0.5mol / dm 3的钨酸盐 以钨为主。 获得的金 - 钴基非晶态合金镀膜由不具有微晶的均匀非晶相组成，并且具有增强的硬度，同时保持金的良好接触电阻和化学稳定性，使得在实际使用中没有问题 基础; 因此，金钴系非晶合金镀膜可以有效地用作电气和电子部件如继电器中的接触材料。

公开(公告)号：US20050111162A1

公开(公告)日：2005-05-26

申请号：US10974789

申请日：2004-10-28

申请人： Tetsuya Osaka ,  Ichiro Koiwa ,  Akira Hashimoto ,  Yoshimi Sato

发明人： Tetsuya Osaka ,  Ichiro Koiwa ,  Akira Hashimoto ,  Yoshimi Sato

IPC分类号： H01G4/12 ,  H01G2/00 ,  H01G4/008 ,  H01G4/06 ,  H01G4/30 ,  H01G4/33 ,  H01G13/00 ,  H01G13/06 ,  H01L21/822 ,  H01L27/04 ,  H05K1/16 ,  H05K3/38 ,  H05K3/46

CPC分类号： H01G4/33 ,  H01G4/008 ,  H01G4/1227 ,  H01G13/006 ,  H05K1/162 ,  H05K3/388 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2203/016 ,  Y10T29/42 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49147 ,  Y10T29/49155 ,  Y10T29/49165 ,  Y10T29/49169

摘要： A capacitor capable of being incorporated into a packaging substrate, characterized in that the capacitor comprises a high-dielectric-constant layer, and an upper electrode layer and a lower electrode layer sandwiching the high-dielectric-constant layer from the upper side and the lower side. A packaging substrate containing the capacitor, and a method for producing the same are also provided.

摘要翻译： 一种能够结合到封装基板中的电容器，其特征在于，电容器包括高介电常数层，以及从上侧和下侧夹着高介电常数层的上电极层和下电极层 侧。 还提供了包含该电容器的封装基板及其制造方法。

公开(公告)号：US20050082171A1

公开(公告)日：2005-04-21

申请号：US10816834

申请日：2004-04-05

申请人： Tetsuya Osaka ,  Tokihiko Yokoshima

发明人： Tetsuya Osaka ,  Tokihiko Yokoshima

IPC分类号： C25D3/56 ,  C25D5/18 ,  C25D5/50 ,  C25D17/00

CPC分类号： C25D3/562 ,  C25D5/18 ,  C25D5/50 ,  C25D17/002

摘要： A soft magnetic thin film of CoFe alloy having a high Br and low Hc is prepared by furnishing a plating tank including cathode and anode compartments which are separated by a diaphragm or salt bridge so as to permit charge transfer, but inhibit penetration of Fe ions, feeding a plating solution containing Co ions and divalent Fe ions to the cathode compartment, feeding an electrolyte solution to the anode compartment, immersing a substrate in the plating solution, immersing an anode in the electrolyte solution, electroplating, and heat treating the plated film at 100-550° C.; or by immersing a substrate and a soluble anode in a plating solution containing Co ions and divalent Fe ions, electroplating, and heat treating the plated film at 100-550° C.

摘要翻译： 制备具有高Br和低Hc的CoFe合金的软磁性薄膜，其包括通过隔膜或盐桥隔开的阴极和阳极隔室的镀槽，以允许电荷转移，但抑制Fe离子的渗透， 将含有Co离子和二价Fe离子的电镀液供给到阴极室，将电解质溶液供给到阳极室，将基板浸渍在电镀液中，将阳极浸渍在电解液中，电镀，并对镀膜进行热处理 100-550°C。 或者将基板和可溶性阳极浸渍在含有Co离子和二价Fe离子的电镀溶液中，电镀，并在100-550℃下热处理该镀膜。

公开(公告)号：US20050057855A1

公开(公告)日：2005-03-17

申请号：US10935519

申请日：2004-09-07

申请人： Tetsuya Osaka ,  Toru Asahi ,  Tokihiko Yokoshima ,  Toshihiro Tsumori

发明人： Tetsuya Osaka ,  Toru Asahi ,  Tokihiko Yokoshima ,  Toshihiro Tsumori

IPC分类号： G11B5/00 ,  G11B5/667 ,  G11B5/73 ,  G11B5/74 ,  G11B5/84 ,  G11B5/82 ,  G11B15/64 ,  G11B17/32

CPC分类号： G11B5/667 ,  G11B5/00 ,  G11B5/7315 ,  G11B5/74 ,  G11B5/8404 ,  G11B2005/001 ,  G11B2005/0029

摘要： When a soft magnetic layer for a double layer type perpendicular magnetic recording medium is formed by a plating method, there is the problem of the occurrence of an isolated pulse noise called spike noise so that signal reproduction characteristics are lost. In order to solve this problem, provided are a surface-treated substrate for a magnetic recording medium comprising a substrate having a diameter of not more than 90 mm, and a soft magnetic plating layer comprising an alloy of at least two metals selected from the group consisting of Co, Ni and Fe, which is provided above the substrate, wherein the soft magnetic layer has a coercivity of less than 20 oersted (Oe) in a direction that is parallel to a substrate surface, and wherein a ratio of saturation magnetization to residual magnetization in a direction that is parallel to a surface of the substrate is from 4:1 to 4:3; and a magnetic recording medium comprising the magnetic recording medium substrate.

摘要翻译： 当通过电镀法形成双层型垂直磁记录介质的软磁性层时，存在称为尖峰噪声的孤立脉冲噪声的问题，从而丢失了信号再现特性。 为了解决这个问题，提供了一种用于磁记录介质的经表面处理的基板，其包括直径不大于90mm的基板，以及软磁性镀层，该软磁性镀层包含选自以下的至少两种金属 由Co，Ni和Fe组成，其设置在衬底上方，其中软磁性层在平行于衬底表面的方向上具有小于20奥斯特（Oe）的矫顽力，并且其中饱和磁化强度与 在平行于衬底表面的方向上的剩余磁化强度为4:1至4:3; 以及包括磁记录介质基板的磁记录介质。

公开(公告)号：US5175114A

公开(公告)日：1992-12-29

申请号：US463761

申请日：1990-01-12

申请人： Yoshihiro Ono ,  Fumiaki Matsushima ,  Tetsuya Osaka

发明人： Yoshihiro Ono ,  Fumiaki Matsushima ,  Tetsuya Osaka

IPC分类号： G02F1/1365 ,  H01C7/10 ,  H01L45/00

CPC分类号： H01L45/00 ,  G02F1/1365 ,  H01C7/10 ,  Y10S438/957 ,  Y10T29/413

摘要： A bidirectional nonlinear resistor for use as a nonlinear active element having a highly insulating organic film formed on a first conductor by polymerizing an electrolytic solution containing a supporting electrolyte and a soluble organic compound, and a conductor identical or not identical in kind with the first conductor formed on the organic film is provided. An active matrix substrate including a plurality of the bidirectional nonlinear resistor elements may be used to have a liquid crystal display panel.