公开(公告)号：US20250166972A1

公开(公告)日：2025-05-22

申请号：US18517206

申请日：2023-11-22

Applicant: Tokyo Electron Limited

Inventor： Evrim Solmaz ,  Du Zhang ,  Barton Lane

IPC: H01J37/32

Abstract: An example method for a plasma process includes generating plasma within a process chamber with source power (SP) pulses. The source power pulses have a repetition frequency. The method further includes adjusting a neutral flux within the process chamber by changing the repetition frequency of the source power pulses. In some embodiments, the plasma etches a substrate.

公开(公告)号：US20250132128A1

公开(公告)日：2025-04-24

申请号：US18489416

申请日：2023-10-18

Applicant: Tokyo Electron Limited

Inventor： Evrim Solmaz ,  Du Zhang ,  Barton Lane

IPC: H01J37/32

Abstract: A method for a plasma process includes generating plasma within a process chamber with a source power pulse and applying a bias power pulse to a substrate holder within the process chamber. A frequency of the bias power pulse increases from a first frequency value to a second frequency value during the bias power pulse. The bias power pulse occurs after the source power pulse.

公开(公告)号：US20250069852A1

公开(公告)日：2025-02-27

申请号：US18453875

申请日：2023-08-22

Applicant: Tokyo Electron Limited

Inventor： Justin Moses ,  Merritt Funk ,  Chelsea DuBose ,  Barton Lane

IPC: H01J37/32 ,  H01L21/311

Abstract: A method for multitone plasma processing includes providing a substrate into a plasma processing chamber, igniting a plasma in the plasma processing chamber with a multitone signal, and performing a first plasma process on the substrate with the plasma. The multitone signal includes a first tone and a second tone.

公开(公告)号：US20250022688A1

公开(公告)日：2025-01-16

申请号：US18350519

申请日：2023-07-11

Applicant: Tokyo Electron Limited

Inventor： Barton Lane

IPC: H01J37/32

Abstract: An embodiment plasma processing apparatus includes a plasma generation source, a nozzle in a plasma chamber, the nozzle being able to direct plasma from the plasma generation source to a wafer that is to be processed, the plasma having the form of a plasma stream at an exit of the nozzle, a gas shroud disposed in the plasma chamber and over the wafer, the gas shroud including a first circular opening in a top surface of the gas shroud, a second circular opening in a bottommost surface of the gas shroud, the nozzle being disposed in the first circular opening and the second circular opening, and a gas plenum configured to be maintained at a first pressure, a first region between the second circular opening and a top surface of the wafer being configured to be maintained at a second pressure, the first pressure and the second pressure being different.

公开(公告)号：US20240162619A1

公开(公告)日：2024-05-16

申请号：US17985360

申请日：2022-11-11

Applicant: Tokyo Electron Limited

Inventor： Chelsea DuBose ,  Barton Lane ,  Merritt Funk ,  Justin Moses

IPC: H01Q9/27 ,  H01Q5/25

CPC classification number: H01Q9/27 ,  H01Q5/25

Abstract: According to an embodiment, a radiating structure of a resonating structure used for plasma processing is disclosed. The radiating structure includes a set of first arms and a set of second arms. Each first arm has a first inductance and is coupled to a respective first capacitor and a respective second capacitor of the resonating structure to form a corresponding first resonant circuit operating at a first resonance frequency. Each second arm has a second inductance and is coupled to a respective third capacitor and a respective fourth capacitor of the resonating structure to form a corresponding second resonant circuit operating at a second resonance frequency. In a first mode of operation, the resonating structure operates as a single resonance antenna. In a second mode of operation, the resonating structure operates as a parallel resonance antenna.

公开(公告)号：US20230377845A1

公开(公告)日：2023-11-23

申请号：US17748737

申请日：2022-05-19

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Barton Lane

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32165 ,  H01J37/3211 ,  H01J37/32651 ,  H01J37/32146

Abstract: An apparatus for plasma processing includes a first resonating structure and a second resonating structure. The first resonating structure is coupled to a first RF generator through a first matching circuit. The second resonating structure surrounds the first resonating structure. The second resonating structure is coupled to a second RF generator through a second matching circuit.

公开(公告)号：US11817296B2

公开(公告)日：2023-11-14

申请号：US16913545

申请日：2020-06-26

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Merritt Funk ,  Yohei Yamazawa ,  Justin Moses ,  Chelsea DuBose ,  Michael Hummel

IPC: H01J37/32 ,  G01R29/08

CPC classification number: H01J37/32174 ,  G01R29/0878

Abstract: A radio frequency sensor assembly includes a sensor casing disposed around a central hole, the sensor casing including a first conductive cover and a second conductive cover. The assembly includes a cavity disposed around the central hole and includes a dielectric material, the cavity being bounded by a first major outer surface and a second major outer surface along a radial direction from a center of the central hole, where the first conductive cover is electrically coupled to the second conductive cover through a coupling region beyond the second major outer surface of the cavity, and electrically insulated from the second conductive cover by the cavity and the central hole. The assembly includes a current sensor electrically insulated from the sensor casing and including a current pickup disposed symmetrically around the central hole, the current pickup being disposed within the cavity and being insulated from the sensor casing.

公开(公告)号：US20230132660A1

公开(公告)日：2023-05-04

申请号：US17514815

申请日：2021-10-29

Applicant: Tokyo Electron Limited

Inventor： Chelsea Dubose ,  Barton Lane ,  Merritt Funk ,  Justin Moses ,  Yohei Yamazawa

IPC: H01J37/32 ,  H01Q13/18 ,  H01Q1/38 ,  H01Q7/00

Abstract: A radio frequency (RF) system including: a first conductive covering surface, a portion of the first conductive covering surface including a portion of the first outer wall of a first RF device; a second conductive covering surface aligned to the first conductive covering surface, the second conductive covering surface being disposed around the insulating hole; an insulating hole for an RF center conductor extending through the first conductive covering surface and the second conductive covering surface, the first conductive covering surface and the second conductive covering surface being disposed around the insulating hole; a cavity bounded by the first conductive covering surface and the second conductive covering surface, the cavity being an insulating region; and an RF signal pickup disposed within the cavity.

公开(公告)号：US20230117812A1

公开(公告)日：2023-04-20

申请号：US17451094

申请日：2021-10-15

Applicant: Tokyo Electron Limited

Inventor： Zhiying Chen ,  Barton Lane ,  Yun Han ,  Peter Lowell George Ventzek ,  Alok Ranjan

IPC: H01J37/32

Abstract: A method for plasma processing includes: sustaining a plasma in a plasma processing chamber, the plasma processing chamber including a first radio frequency (RF) electrode and a second RF electrode, where sustaining the plasma includes: coupling an RF source signal to the first RF electrode; and coupling a bias signal between the first RF electrode and the second RF electrode, the bias signal having a bipolar DC (B-DC) waveform including a plurality of B-DC pulses, each of the B-DC pulses including: a negative bias duration during which the pulse has negative polarity relative to a reference potential, a positive bias duration during which the pulse has positive polarity relative to the reference potential, and a neutral bias duration during which the pulse has neutral polarity relative to the reference potential.

公开(公告)号：US11600474B2

公开(公告)日：2023-03-07

申请号：US16913526

申请日：2020-06-26

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Merritt Funk ,  Yohei Yamazawa ,  Justin Moses ,  Chelsea Dubose ,  Michael Hummel

IPC: H01J37/32 ,  H01J37/24

Abstract: A radio frequency (RF) system includes a RF power source configured to power a load with an RF signal; an RF pipe including an inner conductor and an outer conductor connected to ground coupling the RF power source to the load; and a current sensor aligned to a central axis of the RF pipe carrying the RF signal. A sensor casing is disposed around the RF pipe, where the sensor casing includes a conductive material connected to the outer conductor of the RF pipe. A gallery is disposed within the sensor casing and outside the outer conductor of the RF pipe, where the current sensor is disposed in the gallery. A slit in the outer conductor of the RF pipe exposes the current sensor to a magnetic field due to the current of the RF signal in the inner conductor of the RF pipe.