摘要:
An optoelectronic device comprising at least one nanostructure-film electrode and fabrication methods thereof are discussed. The optoelectronic device may further comprise a different material to fill in porosity in the nanostructure-film. Additionally, the optoelectronic device may be a solar cell, comprising at least one of a variety of photosensitive active layers.
摘要:
Active, electrical, electronic and optoelectronic components and structures are fabricated to include composites containing electrically conductive nanostructures as part thereof. These nanostructures include nanowires, nanofibres, nanoribbons, nanoplates or nanotubes as single structures or an assembly of multiple structures. They are composed of carbon or other conductive materials.
摘要:
The present invention relates generally to charge storage devices with at least one electrode having combined double layer supercapacitor, electrochemical supercapacitor and/or battery functionalities. In some embodiments, the electrode, may be composed of an ECS material, a highly-structured DLS material and a less-structured DLS material.
摘要:
The present invention describes supercapacitors with enhanced energy density and power density, achieved largely through use of electrodes that incorporate ternary oxide(s). Ternary oxide(s) are ternary nanostructures have the formula AxByOz, wherein x ranges from 0.25 to 24, and y ranges from 0.5 to 40, and z ranges from 2 to 100, and wherein A and B are independently selected from groups of elements specified in this application.
摘要:
A transparent and conductive film comprising at least one network of graphene flakes is described herein. This film may further comprise an interpenetrating network of other nanostructures, a polymer and/or a functionalization agent(s). A method of fabricating the above device is also described, and may comprise depositing graphene flakes in solution and evaporating solvent therefrom.
摘要:
An energy storage device includes a nanostructured network and an electrolyte in contact with the nanostructured network. The nanostructured network is an electrically conducting nanostructured network that provides combined functions of an electrode and a charge collector of the energy storage device. An electrical device includes an energy storage device that includes a nanostructured network and an electrolyte in contact with the nanostructured network, and a load-bearing electrical circuit electrically connected to the electrical energy storage device. The energy storage device is suitable to power the electrical device while in operation.
摘要:
Touch screen displays comprising at least one nanostructure-film, and fabrication methods thereof, are discussed. Nanostructure-films may comprise, for example, a network(s) of nanotubes, nanowires, nanoparticles and/or graphene flakes. Such films are preferably at least semi-transparent and relatively flexible, making them well-suited for use in a variety of touch screen applications.
摘要:
An optoelectronic device comprising at least one nanostructure-film electrode is discussed. The optoelectronic device may further comprise a different material, such as a polymer, to fill pores in the nanostructure-film. Additionally or alternatively, the optoelectronic device may comprise an electrode grid superimposed on the nanostructure-film.
摘要:
The disclosure provided herein describes methods and devices for the detection of analytes and/or the characterization of interactions between analytes and compositions capable of binding the analytes. Embodiments of the invention allow the identification and/or characterization of analytes by monitoring the electronic properties of sensors having electronic circuits coupled to compositions capable of binding the analytes under different sensing conditions.
摘要:
A doped nanostructure network, devices incorporating a doped nanostructure network and fabrication methods thereof are described. Dopant may be deposited by a solution-based method, and the dopant is preferably stable over an extended period of time. Networks according to embodiments of the present invention can exhibit conductivities in excess of 4000 S/cm.