Illumination system particularly for EUV lithography
    41.
    发明授权
    Illumination system particularly for EUV lithography 有权
    照明系统尤其适用于EUV光刻

    公开(公告)号:US06198793B1

    公开(公告)日:2001-03-06

    申请号:US09305017

    申请日:1999-05-04

    Abstract: The invention concerns an illumination system for wavelengths ≦193 nm, particularly for EUV lithography, with at least one light source, which has an illumination A in a predetermined surface; at least one device for producing secondary light sources; at least one mirror or lens device comprising at least one mirror or one lens, which is or are organized into raster elements; one or more optical elements, which are arranged between the mirror or lens device comprising at least one mirror or one lens, which is or are organized into raster elements and the reticle plane, whereby the optical elements image the secondary light sources in the exit pupil of the illumination system. The illumination system is characterized by the fact that the raster elements of the one or more mirror or lenses are shaped and arranged in such a way that the images of the raster elements cover by means of the optical elements the major portion of the reticle plane and that the exit pupil defined by aperture and filling degree is illuminated.

    Abstract translation: 本发明涉及用于波长<= 193nm的照明系统,特别是对于EUV光刻,具有至少一个在预定表面具有照明A的光源; 至少一个用于产生二次光源的装置; 至少一个镜子或透镜装置,其包括至少一个反射镜或一个透镜,其被组合成光栅元件; 布置在包括至少一个反射镜或一个透镜的反射镜或透镜装置之间的一个或多个光学元件,其被组织成光栅元件和光罩平面,由此光学元件将出射光瞳中的次级光源成像 照明系统的特征在于,一个或多个镜子或透镜的光栅元件被成形和布置成使得光栅元件的图像通过光学元件覆盖主要部分 并且照明由孔径和填充度限定的出射光瞳。

    Projection illumination system for EUV microlithography
    42.
    发明授权
    Projection illumination system for EUV microlithography 有权
    用于EUV微光刻的投影照明系统

    公开(公告)号:US08710471B2

    公开(公告)日:2014-04-29

    申请号:US12887139

    申请日:2010-09-21

    CPC classification number: G03F7/702 G03F7/70008 G03F7/70058 G03F7/70108

    Abstract: A projection illumination installation for EUV microlithography includes an EUV synchrotron light source for producing EUV used light. An object field is illuminated with the used light using illumination optics. The object field is mapped into an image field using projection optics. A scanning device is used to illuminate the object field by deflecting the used light in sync with a projection illumination period. The result is a projection illumination installation in which the output power from an EUV synchrotron light source can be used as efficiently as possible for EUV projection illumination.

    Abstract translation: 用于EUV微光刻的投影照明装置包括用于产生EUV使用光的EUV同步加速器光源。 使用照明光学器件的被使用的光照亮物体场。 使用投影光学将物体场映射到图像场中。 扫描装置用于通过与投影照明周期同步地偏转所使用的光来照亮对象场。 结果是投影照明设备,其中EUV同步加速器光源的输出功率可以尽可能高效地用于EUV投影照明。

    EUV COLLECTOR
    43.
    发明申请
    EUV COLLECTOR 有权
    EUV收藏家

    公开(公告)号:US20120050703A1

    公开(公告)日:2012-03-01

    申请号:US13214470

    申请日:2011-08-22

    Abstract: An EUV collector for collecting and transmitting radiation from an EUV radiation source includes at least one collector mirror for reflecting an emission of the EUV radiation source, which is rotationally symmetric with respect to a central axis. The EUV collector also includes a cooling device for cooling the at least one collector mirror. The cooling device has at least one cooling element, which has a course with respect to the collector mirror, in each case, such that the projection of the course into a plane perpendicular to the central axis has a main direction, which encloses an angle of at most 20° with respect to a predetermined preferred direction. The collector transmits improved quality radiation to illuminate an object field.

    Abstract translation: 用于收集和发射来自EUV辐射源的辐射的EUV收集器包括至少一个收集器反射镜,用于反射相对于中心轴旋转对称的EUV辐射源的发射。 EUV收集器还包括用于冷却至少一个收集器反射镜的冷却装置。 冷却装置具有至少一个冷却元件,该冷却元件在每种情况下具有相对于收集器反射镜的过程,使得该过程的投影垂直于中心轴线的平面具有主方向,该主方向包围 相对于预定的优选方向为至多20°。 收集器传输改进的质量辐射以照亮物体场。

    Collector for an illumination system
    44.
    发明授权
    Collector for an illumination system 有权
    收集器用于照明系统

    公开(公告)号:US07910900B2

    公开(公告)日:2011-03-22

    申请号:US11781010

    申请日:2007-07-20

    CPC classification number: G21K1/06 B82Y10/00 G02B2207/123 G03F7/70166

    Abstract: Collectors with mirror shells arranged inside each other, illumination systems equipped with such collectors, projection exposure apparatuses equipped with such illumination systems, methods of manufacturing microelectronic components with such projection exposure apparatuses, and related systems, components and methods are disclosed.

    Abstract translation: 公开了具有彼此布置的具有镜壳的收集器,配备有这种收集器的照明系统,配备有这种照明系统的投影曝光装置,具有这种投影曝光装置的微电子部件的制造方法以及相关系统,部件和方法。

    ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY AND RELATED SYSTEM AND APPARATUS
    45.
    发明申请
    ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY AND RELATED SYSTEM AND APPARATUS 有权
    EUV微观照相和相关系统和装置的照明光学

    公开(公告)号:US20110063598A1

    公开(公告)日:2011-03-17

    申请号:US12915785

    申请日:2010-10-29

    CPC classification number: G03F7/70191 G03F7/70083

    Abstract: An illumination optics for EUV microlithography guides an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension and a shorter field dimension, where the ratio is considerably greater than 1. A field facet mirror has a plurality of field facets that set defined illumination conditions in the object field. A following optics downstream of the field facet mirror transmits the illumination light into the object field. The following optics includes a pupil facet mirror with a plurality of pupil facets. The field facets are in each case individually allocated to the pupil facets so that portions of the illumination light bundle impinging upon in each case one of the field facets are guided on to the object field via the associated pupil facet. The field facet mirror not only includes a plurality of basic illumination field facets which provide a basic illumination of the object field via associated basic illumination pupil facets, but also includes a plurality of correction illumination field facets which provide for a correction of the illumination of the object field via associated correction illumination pupil facets. The result is an illumination optics which allows unwanted variations of illumination parameters, for instance an illumination intensity distribution or an illumination angle distribution, to be corrected across the object field.

    Abstract translation: 用于EUV微光刻的照明光学器件将照射光束从辐射源引导到物场,其具有在较大场尺寸和较短场尺寸之间的延伸比,其中该比率远大于1.场分面镜具有多个 的场面在场景中设置定义的照明条件。 在场面反射镜下游的以下光学器件将照明光透射到物体场中。 以下光学器件包括具有多个光瞳面的光瞳小面镜。 场分面在每种情况下分别被分配给光瞳面,使得在各种情况下照射的照明光束的一部分通过相关联的光瞳小面被引导到物场。 场面镜不仅包括多个基本照明场面,它们通过相关联的基本照明光瞳面提供物场的基本照明,而且还包括多个校正照明场面,其提供对照射的照明的校正 通过相关联的校正照明光瞳面进行物体场。 结果是照明光学元件允许在整个对象场校正照明参数的不期望的变化,例如照明强度分布或照明角度分布。

    PROJECTION ILLUMINATION SYSTEM FOR EUV MICROLITHOGRAPHY
    46.
    发明申请
    PROJECTION ILLUMINATION SYSTEM FOR EUV MICROLITHOGRAPHY 有权
    用于EUV微观计算的投影照明系统

    公开(公告)号:US20110014799A1

    公开(公告)日:2011-01-20

    申请号:US12887139

    申请日:2010-09-21

    CPC classification number: G03F7/702 G03F7/70008 G03F7/70058 G03F7/70108

    Abstract: A projection illumination installation for EUV microlithography includes an EUV synchrotron light source for producing EUV used light. An object field is illuminated with the used light using illumination optics. The object field is mapped into an image field using projection optics. A scanning device is used to illuminate the object field by deflecting the used light in sync with a projection illumination period. The result is a projection illumination installation in which the output power from an EUV synchrotron light source can be used as efficiently as possible for EUV projection illumination.

    Abstract translation: 用于EUV微光刻的投影照明装置包括用于产生EUV使用光的EUV同步加速器光源。 使用照明光学器件的被使用的光照亮物体场。 使用投影光学将物体场映射到图像场中。 扫描装置用于通过与投影照明周期同步地偏转所使用的光来照亮对象场。 结果是投影照明设备,其中EUV同步加速器光源的输出功率可以尽可能高效地用于EUV投影照明。

    ILLUMINATION SYSTEM FOR A MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS
    47.
    发明申请
    ILLUMINATION SYSTEM FOR A MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS 审中-公开
    微型投影曝光装置照明系统

    公开(公告)号:US20110001948A1

    公开(公告)日:2011-01-06

    申请号:US12871979

    申请日:2010-08-31

    Applicant: Udo Dinger

    Inventor: Udo Dinger

    Abstract: An illumination system for a microlithography projection exposure apparatus generally includes an optical element formed of a plurality of facet elements. The facet elements are arranged such that, for each facet element, a proportion of the side surfaces of the facet element is at a certain distance from the side surfaces of all the other facet elements. This gives rise to interspaces between the facet elements which are not used optically. The interspaces can be used for simpler mounting of the facet elements or for fitting mechanical components, such as actuators. A collector is used to efficiently illuminate such an optical element. The collector includes a plurality of segments that are in part non-continuous. Alternatively, however, continuous segments with a bend are also possible.

    Abstract translation: 用于微光刻投影曝光装置的照明系统通常包括由多个小面元件形成的光学元件。 小面元件布置成使得对于每个小面元件,小面元件的侧表面的一部分与所有其它小面元件的侧表面相距一定距离。 这导致在光学不使用的小面元件之间的间隙。 间隙可以用于更简单地安装小面元件或用于装配机械部件,例如致动器。 使用收集器来有效地照亮这样的光学元件。 收集器包括部分非连续的多个段。 但是,也可以是具有弯曲部的连续部分。

    Mirror for use in a projection exposure apparatus
    49.
    发明授权
    Mirror for use in a projection exposure apparatus 有权
    用于投影曝光装置的镜子

    公开(公告)号:US07481543B1

    公开(公告)日:2009-01-27

    申请号:US11523396

    申请日:2006-09-18

    CPC classification number: B24B13/06 B24B51/00

    Abstract: A mirror for use in a projection exposure apparatus is described. The mirror has a main surface extending beyond an outline of an optical surface of the main surface. The optical surface has a roughness of less than 1 nm rms, and the outline of the optical surface includes a portion where the main surface extends beyond the optical surface by less than 0.2 mm. Manufacturing the mirror may involve polishing the optical surface in regions of the main surface extending beyond the optical surface and removing material of the substrate carrying a portion of the surface extending beyond the optical surface.

    Abstract translation: 描述了用于投影曝光装置的反射镜。 反射镜具有延伸超过主表面的光学表面轮廓的主表面。 光学表面具有小于1nm的粗糙度,并且光学表面的轮廓包括主表面延伸超过光学表面小于0.2mm的部分。 制造反射镜可以包括在主表面延伸超过光学表面的区域中抛光光学表面,并去除承载延伸超过光学表面的表面的一部分的基板的材料。

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