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    METHOD AND STRUCTURE FOR WORK FUNCTION ENGINEERING IN TRANSISTORS INCLUDING A HIGH DIELECTRIC CONSTANT GATE INSULATOR AND METAL GATE (HKMG)
    42.
    发明申请
    METHOD AND STRUCTURE FOR WORK FUNCTION ENGINEERING IN TRANSISTORS INCLUDING A HIGH DIELECTRIC CONSTANT GATE INSULATOR AND METAL GATE (HKMG) 有权
    包括高介电常数门绝缘子和金属栅的晶体管中的工作功能工程的方法和结构（HKMG）

    公开(公告)号：US20110248350A1

    公开(公告)日：2011-10-13

    申请号：US12757323

    申请日：2010-04-09

    申请人： Michael P. Chudzik ,  William K. Henson ,  Unoh Kwon

    发明人： Michael P. Chudzik ,  William K. Henson ,  Unoh Kwon

    IPC分类号： H01L27/092 ,  H01L21/28 ,  H01L29/78

    CPC分类号： H01L21/28176 ,  H01L21/28079 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/517 ,  H01L29/6659

    摘要： Adjustment of a switching threshold of a field effect transistor including a gate structure including a Hi-K gate dielectric and a metal gate is achieved and switching thresholds coordinated between NFETs and PFETs by providing fixed charge materials in a thin interfacial layer adjacent to the conduction channel of the transistor that is provided for adhesion of the Hi-K material, preferably hafnium oxide or HfSiON, depending on design, to semiconductor material rather than diffusing fixed charge material into the Hi-K material after it has been applied. The greater proximity of the fixed charge material to the conduction channel of the transistor increases the effectiveness of fixed charge material to adjust the threshold due to the work function of the metal gate, particularly where the same metal or alloy is used for both NFETs and PFETs in an integrated circuit; preventing the thresholds from being properly coordinated.

    摘要翻译： 实现了包括包括Hi-K栅极电介质和金属栅极的栅极结构的场效应晶体管的开关阈值的调整，并且通过在与导电沟道相邻的薄界面层中提供固定的电荷材料来在NFET和PFET之间协调切换阈值 根据设计将Hi-K材料，优选氧化铪或HfSiON粘附到半导体材料上而不是将固定的电荷材料扩散到Hi-K材料中之后施加的晶体管。 固定电荷材料与晶体管的导通通道的接近程度增加了由于金属栅极的功函数而导致的固定电荷材料的调整阈值的有效性，特别是当相同的金属或合金用于NFET和PFET时 在集成电路中; 防止阈值正确协调。

    Method and structure for work function engineering in transistors including a high dielectric constant gate insulator and metal gate (HKMG)
    43.
    发明授权
    Method and structure for work function engineering in transistors including a high dielectric constant gate insulator and metal gate (HKMG) 有权
    晶体管中工作功能工程的方法和结构包括高介电常数栅极绝缘体和金属栅极（HKMG）

    公开(公告)号：US08728925B2

    公开(公告)日：2014-05-20

    申请号：US13463283

    申请日：2012-05-03

    申请人： Michael P. Chudzik ,  William K. Henson ,  Unoh Kwon

    发明人： Michael P. Chudzik ,  William K. Henson ,  Unoh Kwon

    IPC分类号： H01L21/3205 ,  H01L21/4763

    CPC分类号： H01L21/28176 ,  H01L21/28079 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/517 ,  H01L29/6659

    摘要： Adjustment of a switching threshold of a field effect transistor including a gate structure including a Hi-K gate dielectric and a metal gate is achieved and switching thresholds coordinated between NFETs and PFETs by providing fixed charge materials in a thin interfacial layer adjacent to the conduction channel of the transistor that is provided for adhesion of the Hi-K material, preferably hafnium oxide or HfSiON, depending on design, to semiconductor material rather than diffusing fixed charge material into the Hi-K material after it has been applied. The greater proximity of the fixed charge material to the conduction channel of the transistor increases the effectiveness of fixed charge material to adjust the threshold due to the work function of the metal gate, particularly where the same metal or alloy is used for both NFETs and PFETs in an integrated circuit; preventing the thresholds from being properly coordinated.

    摘要翻译： 实现了包括包括Hi-K栅极电介质和金属栅极的栅极结构的场效应晶体管的开关阈值的调整，并且通过在与导电沟道相邻的薄界面层中提供固定的电荷材料来在NFET和PFET之间协调切换阈值 根据设计将Hi-K材料，优选氧化铪或HfSiON粘附到半导体材料上而不是将固定的电荷材料扩散到Hi-K材料中之后施加的晶体管。 固定电荷材料与晶体管的导通通道的接近程度增加了由于金属栅极的功函数而导致的固定电荷材料的调整阈值的有效性，特别是当相同的金属或合金用于NFET和PFET时 在集成电路中; 防止阈值正确协调。

    SCAVENGING METAL STACK FOR A HIGH-K GATE DIELECTRIC
    45.
    发明申请
    SCAVENGING METAL STACK FOR A HIGH-K GATE DIELECTRIC 有权
    用于高K栅介质的SCAVENGING金属叠层

    公开(公告)号：US20140001573A1

    公开(公告)日：2014-01-02

    申请号：US13547772

    申请日：2012-07-12

    申请人： Takashi Ando ,  Unoh Kwon ,  Vijay Narayanan ,  James K. Schaeffer

    发明人： Takashi Ando ,  Unoh Kwon ,  Vijay Narayanan ,  James K. Schaeffer

    IPC分类号： H01L29/78

    CPC分类号： H01L29/4958 ,  H01L21/28088 ,  H01L21/823828 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66507 ,  H01L29/6659 ,  H01L29/7833

    摘要： A semiconductor structure is provided. The structure includes a semiconductor substrate of a semiconductor material and a gate dielectric having a high dielectric constant dielectric layer with a dielectric constant greater than silicon. The gate dielectric is located on the semiconductor substrate. A gate electrode abuts the gate dielectric. The gate electrodes includes a lower metal layer abutting the gate dielectric, a scavenging metal layer abutting the lower metal layer, an upper metal layer abutting the scavenging metal layer, and a silicon layer abutting the upper metal layer. The scavenging metal layer reduces an oxidized layer at an interface between the upper metal layer and the silicon layer responsive to annealing.

    摘要翻译： 提供半导体结构。 该结构包括半导体材料的半导体衬底和具有介电常数大于硅的介电常数介电层的栅极电介质。 栅极电介质位于半导体衬底上。 栅电极邻接栅极电介质。 栅电极包括邻接栅电介质的下金属层，邻接下金属层的扫除金属层，与清扫金属层邻接的上金属层和邻接上金属层的硅层。 清除金属层响应于退火而在上金属层和硅层之间的界面处减少氧化层。

    METHOD AND STRUCTURE FOR WORK FUNCTION ENGINEERING IN TRANSISTORS INCLUDING A HIGH DIELECTRIC CONSTANT GATE INSULATOR AND METAL GATE (HKMG)
    49.
    发明申请
    METHOD AND STRUCTURE FOR WORK FUNCTION ENGINEERING IN TRANSISTORS INCLUDING A HIGH DIELECTRIC CONSTANT GATE INSULATOR AND METAL GATE (HKMG) 有权
    包括高介电常数门绝缘子和金属栅的晶体管中的工作功能工程的方法和结构（HKMG）

    公开(公告)号：US20120214299A1

    公开(公告)日：2012-08-23

    申请号：US13463283

    申请日：2012-05-03

    申请人： Michael P. Chudzik ,  William K. Henson ,  Unoh Kwon

    发明人： Michael P. Chudzik ,  William K. Henson ,  Unoh Kwon

    IPC分类号： H01L21/336

    CPC分类号： H01L21/28176 ,  H01L21/28079 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/517 ,  H01L29/6659

    摘要： Adjustment of a switching threshold of a field effect transistor including a gate structure including a Hi-K gate dielectric and a metal gate is achieved and switching thresholds coordinated between NFETs and PFETs by providing fixed charge materials in a thin interfacial layer adjacent to the conduction channel of the transistor that is provided for adhesion of the Hi-K material, preferably hafnium oxide or HfSiON, depending on design, to semiconductor material rather than diffusing fixed charge material into the Hi-K material after it has been applied. The greater proximity of the fixed charge material to the conduction channel of the transistor increases the effectiveness of fixed charge material to adjust the threshold due to the work function of the metal gate, particularly where the same metal or alloy is used for both NFETs and PFETs in an integrated circuit; preventing the thresholds from being properly coordinated.

    摘要翻译： 实现了包括包括Hi-K栅极电介质和金属栅极的栅极结构的场效应晶体管的开关阈值的调整，并且通过在与导电沟道相邻的薄界面层中提供固定的电荷材料来在NFET和PFET之间协调切换阈值 根据设计将Hi-K材料，优选氧化铪或HfSiON粘附到半导体材料上而不是将固定的电荷材料扩散到Hi-K材料中之后施加的晶体管。 固定电荷材料与晶体管的导通通道的接近程度增加了由于金属栅极的功函数而导致的固定电荷材料的调整阈值的有效性，特别是当相同的金属或合金用于NFET和PFET时 在集成电路中; 防止阈值正确协调。

    Replacement Metal Gate Structures for Effective Work Function Control
    50.
    发明申请
    Replacement Metal Gate Structures for Effective Work Function Control 有权
    更换金属门结构，实现有效的工作功能控制

    公开(公告)号：US20120068261A1

    公开(公告)日：2012-03-22

    申请号：US12885592

    申请日：2010-09-20

    申请人： Unoh Kwon ,  Michael P. Chudzik ,  Ravikumar Ramachandran

    发明人： Unoh Kwon ,  Michael P. Chudzik ,  Ravikumar Ramachandran

    IPC分类号： H01L27/092 ,  H01L21/8238

    CPC分类号： H01L27/0922 ,  H01L21/823842

    摘要： A stack of a barrier metal layer and a first-type work function metal layer is deposited in replacement metal gate schemes. The barrier metal layer can be deposited directly on the gate dielectric layer. The first-type work function metal layer is patterned to be present only in regions of a first type field effect transistor. A second-type work function metal layer is deposited directly on the barrier metal layer in the regions of a second type field effect transistor. Alternately, the first-type work function layer can be deposited directly on the gate dielectric layer. The barrier metal layer is patterned to be present only in regions of a first type field effect transistor. A second-type work function metal layer is deposited directly on the gate dielectric layer in the regions of the second type field effect transistor. A conductive material fill and planarization form dual work function replacement gate structures.

    摘要翻译： 在替换金属栅极方案中沉积阻挡金属层和第一型功函数金属层的堆叠。 阻挡金属层可以直接沉积在栅极介电层上。 图案化第一型功函数金属层仅存在于第一类场效应晶体管的区域中。 第二类功函数金属层直接沉积在第二类场效应晶体管的区域中的势垒金属层上。 或者，第一类功函数层可以直接沉积在栅介电层上。 图案化阻挡金属层仅存在于第一类场效应晶体管的区域中。 第二类型功函数金属层直接沉积在第二类场效应晶体管的区域中的栅介质层上。 导电材料填充和平坦化形成双功能功能替代栅极结构。