公开(公告)号：US09159621B1

公开(公告)日：2015-10-13

申请号：US14272101

申请日：2014-05-07

申请人： Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

发明人： Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

IPC分类号： H01L21/78 ,  H01L21/683

CPC分类号： H01L21/78 ,  H01L21/67092 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/68377

摘要： Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of scribing a semiconductor wafer having a plurality of integrated circuits involves adhering a backside of a semiconductor wafer to an inner portion of a carrier tape of a substrate carrier that includes a tape frame mounted above the carrier tape. The method also involves overlaying a protective frame above a front side of the semiconductor wafer and above an exposed outer portion of the carrier tape, the protective frame having an opening exposing an inner region of the front side of the semiconductor wafer. The method also involves laser scribing the front side of the semiconductor wafer with the protective frame in place.

摘要翻译： 对具有多个集成电路的各晶片的切割半导体晶片的方法和装置进行说明。 在一个示例中，划片具有多个集成电路的半导体晶片的方法包括将半导体晶片的背面粘附到包括安装在载带上方的带框架的基板载体的载带的内部。 该方法还包括将保护框架覆盖在半导体晶片的前侧上方并且在载带的暴露的外部部分上方，保护框架具有暴露半导体晶片的前侧的内部区域的开口。 该方法还包括用保护框架将半导体晶片的前侧激光划片到位。

公开(公告)号：US09048309B2

公开(公告)日：2015-06-02

申请号：US13917366

申请日：2013-06-13

申请人： Mohammad Kamruzzaman Chowdhury ,  Wei-Sheng Lei ,  Todd Egan ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Ajay Kumar

发明人： Mohammad Kamruzzaman Chowdhury ,  Wei-Sheng Lei ,  Todd Egan ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Ajay Kumar

IPC分类号： H01L21/00 ,  H01L21/78

CPC分类号： H01L21/78

摘要： Uniform masking for wafer dicing using laser and plasma etch is described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits having bumps or pillars includes uniformly spinning on a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.

摘要翻译： 描述了使用激光和等离子体蚀刻的用于晶片切割的均匀掩模。 在一个例子中，对具有多个具有凸起或柱状的集成电路的半导体晶片进行切割的方法包括在半导体晶片上方的掩模上均匀地旋转，该掩模由覆盖并保护集成电路的层组成。 然后用激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。 然后通过图案化掩模中的间隙蚀刻半导体晶片，以对集成电路进行分离。

公开(公告)号：US20150122419A1

公开(公告)日：2015-05-07

申请号：US14595120

申请日：2015-01-12

申请人： Mohammad Kamruzzaman Chowdhury ,  Wei-Sheng Lei ,  Todd Egan ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Ajay Kumar

发明人： Mohammad Kamruzzaman Chowdhury ,  Wei-Sheng Lei ,  Todd Egan ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Ajay Kumar

IPC分类号： H01L21/67 ,  B23K26/36 ,  B23K26/40 ,  H01L21/683

CPC分类号： H01L21/67155 ,  B23K26/0624 ,  B23K26/0661 ,  B23K26/18 ,  B23K26/361 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/67207 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/68381

摘要： Laser and plasma etch wafer dicing using UV-curable adhesive films. A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a carrier substrate by a double-sided UV-curable adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the ICs. The UV-curable adhesive film is partially cured by UV irradiation through the carrier. The singulated ICs are then detached from the partially cured adhesive film still attached to the carrier substrate, for example individually by a pick and place machine. The UV-curable adhesive film may then be further cured for the film's complete removal from the carrier substrate.

摘要翻译： 激光和等离子体蚀刻晶圆切割使用紫外光固化粘合膜。 形成覆盖在晶片上形成的IC的掩模，以及提供与IC的接口的任何凸块。 半导体晶片通过双面UV固化粘合剂膜耦合到载体基板。 通过激光划线将掩模图案化以提供具有间隙的图案化掩模。 图案化使得半导体晶片的区域在形成IC的薄膜层之下露出。 然后通过图案化掩模中的间隙蚀刻半导体晶片，以对IC进行单片化。 UV固化粘合剂膜通过载体的UV照射部分固化。 然后将分离的IC从仍然附着到载体基底上的部分固化的粘合剂膜分离，例如通过拾取和放置机单独分离。 然后可以进一步固化可UV固化的粘合剂膜，以使膜完全从载体基材上除去。

公开(公告)号：US20150079761A1

公开(公告)日：2015-03-19

申请号：US14103534

申请日：2013-12-11

申请人： Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

发明人： Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

IPC分类号： H01L21/82

CPC分类号： H01L21/78 ,  B23K26/32 ,  B23K26/364 ,  B23K26/40 ,  B23K26/402 ,  B23K2103/08 ,  B23K2103/172 ,  B23K2103/42 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/3081 ,  H01L21/31127 ,  H01L21/3213 ,  H01L21/6836 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/54433 ,  H01L2223/54473 ,  H01L2924/0002 ,  H01L2924/00

摘要： Approaches for backside laser scribe plus front side laser scribe and plasma etch dicing of a wafer or substrate are described. For example, a method of dicing a semiconductor wafer having a plurality of integrated circuits on a front side thereof and metallization on a backside thereof involves patterning the metallization on the backside with a first laser scribing process to provide a first plurality of laser scribe lines on the backside. The method also involves forming a mask on the front side. The method also involves patterning, from the front side, the mask with a second laser scribing process to provide a patterned mask with a second plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits, wherein the second plurality of scribe lines is aligned with the first plurality of scribe lines. The method also involves plasma etching the semiconductor wafer through the second plurality of scribe lines to singulate the integrated circuits.

摘要翻译： 描述了用于背面激光划片加正面激光划线和等离子体蚀刻切割晶片或衬底的方法。 例如，在其前侧划分具有多个集成电路的半导体晶片的方法，其背面上的金属化包括用第一激光划线工艺在背面上图案化金属化，以在第一激光划线工艺上提供第一多个激光划线 背面。 该方法还涉及在前侧形成掩模。 该方法还包括利用第二激光划线工艺从正面图案化掩模，以提供具有暴露在集成电路之间的半导体晶片的区域的第二多个划线的图案化掩模，其中第二多个划线是 与第一组多个划线对准。 该方法还包括通过第二多个划线对等离子体蚀刻半导体晶片以对集成电路进行分离。

公开(公告)号：US20150028446A1

公开(公告)日：2015-01-29

申请号：US14513048

申请日：2014-10-13

申请人： Wei-Sheng Lei ,  Brad Eaton ,  Aparna Iyer ,  Madhava Rao Yalamanchili ,  Ajay Kumar

发明人： Wei-Sheng Lei ,  Brad Eaton ,  Aparna Iyer ,  Madhava Rao Yalamanchili ,  Ajay Kumar

IPC分类号： H01L21/82 ,  H01L21/268 ,  H01L21/3065 ,  H01L27/04

CPC分类号： H01L21/82 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/78 ,  H01L27/04

摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, approaches for wafer dicing with wide kerf by using a laser scribing and plasma etching hybrid approach are described. For example, a method of dicing a semiconductor wafer including a plurality of integrated circuits separated by dicing streets involves forming a mask above the semiconductor wafer, the mask having a layer covering and protecting the integrated circuits. The method also involves patterning the mask with a laser scribing process to provide a patterned mask having a pair of parallel gaps for each dicing street, exposing regions of the semiconductor wafer between the integrated circuits. Each gap of each pair of parallel gaps is separated by a distance. The method also involves etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits.

摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 在一个示例中，描述了通过使用激光划线和等离子体蚀刻混合方法的具有宽切口的晶片切割的方法。 例如，通过切割由切割街道分离的多个集成电路的半导体晶片的切割方法包括在半导体晶片上形成掩模，该掩模具有覆盖并保护集成电路的层。 该方法还包括用激光划线工艺对掩模进行图案化以提供具有用于每个切割街道的一对平行间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。 每对平行间隙的每个间隙分开一段距离。 该方法还包括通过图案化掩模中的间隙蚀刻半导体晶片以对集成电路进行分离。

公开(公告)号：US08703581B2

公开(公告)日：2014-04-22

申请号：US13160891

申请日：2011-06-15

申请人： Wei-Sheng Lei ,  Saravjeet Singh ,  Madhava Rao Yalamanchili ,  Brad Eaton ,  Ajay Kumar

发明人： Wei-Sheng Lei ,  Saravjeet Singh ,  Madhava Rao Yalamanchili ,  Brad Eaton ,  Ajay Kumar

IPC分类号： H01L21/00

CPC分类号： H01L21/67207 ,  B23K26/0624 ,  B23K26/064 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/67069 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327

摘要： Methods of dicing substrates having a plurality of ICs. A method includes forming a mask comprising a water soluble material layer over the semiconductor substrate. The mask is patterned with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then etched through the gaps in the patterned mask to singulate the IC and the water soluble material layer washed off.

摘要翻译： 公开了具有多个IC的切割衬底的方法。 一种方法包括在半导体衬底上形成包含水溶性材料层的掩模。 用飞秒激光划线工艺对掩模进行图案化以提供具有间隙的图案化掩模。 图案化使IC之间的衬底的区域暴露。 然后将衬底通过图案化掩模中的间隙进行蚀刻，以对IC进行分离，并将水溶性材料层冲洗掉。

公开(公告)号：US08642448B2

公开(公告)日：2014-02-04

申请号：US13160713

申请日：2011-06-15

申请人： Wei-Sheng Lei ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Saravjeet Singh ,  Ajay Kumar ,  James M. Holden

发明人： Wei-Sheng Lei ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Saravjeet Singh ,  Ajay Kumar ,  James M. Holden

IPC分类号： H01L21/00

CPC分类号： H01L21/822 ,  B23K26/36 ,  H01J37/32889 ,  H01J37/32899 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/67069 ,  H01L21/67092 ,  H01L21/67207 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a femtosecond-based laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.

摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 一种方法包括在半导体晶片上形成掩模。 掩模由覆盖和保护集成电路的层组成。 使用基于飞秒的激光划线工艺对掩模进行图案化以提供具有间隙的图案化掩模。 图案化使得集成电路之间的半导体晶片的区域露出。 然后通过图案化掩模中的间隙蚀刻半导体晶片，以对集成电路进行分离。

公开(公告)号：US20120322239A1

公开(公告)日：2012-12-20

申请号：US13161052

申请日：2011-06-15

申请人： Saravjeet Singh ,  Brad Eaton ,  Ajay Kumar ,  Wei-Sheng Lei ,  James M. Holden ,  Madhava Rao Yalamanchili ,  Todd J. Egan

发明人： Saravjeet Singh ,  Brad Eaton ,  Ajay Kumar ,  Wei-Sheng Lei ,  James M. Holden ,  Madhava Rao Yalamanchili ,  Todd J. Egan

IPC分类号： H01L21/82 ,  C23F1/08 ,  H01L21/3065

CPC分类号： H01L21/67069 ,  B23K26/0624 ,  B23K26/064 ,  B23K26/36 ,  B23K26/364 ,  B23K26/40 ,  B23K26/402 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/67092 ,  H01L21/67207 ,  H01L21/6836 ,  H01L21/68707 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/68377

摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The semiconductor wafer is supported by a substrate carrier. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits while supported by the substrate carrier.

摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 一种方法包括在半导体晶片上形成掩模，掩模由覆盖并保护集成电路的层组成。 半导体晶片由衬底载体支撑。 然后用激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。 然后通过图案化掩模中的间隙蚀刻半导体晶片，以在由衬底载体支撑的同时对集成电路进行分离。

公开(公告)号：US20160365283A1

公开(公告)日：2016-12-15

申请号：US14738389

申请日：2015-06-12

申请人： Wei-Sheng Lei ,  Mohammad Kamruzzaman Chowdhury ,  Brad Eaton ,  Ajay Kumar

发明人： Wei-Sheng Lei ,  Mohammad Kamruzzaman Chowdhury ,  Brad Eaton ,  Ajay Kumar

IPC分类号： H01L21/82 ,  H01L21/308 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/268

CPC分类号： H01L21/82 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02057 ,  H01L21/02076 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31105 ,  H01L21/31127 ,  H01L21/32131 ,  H01L21/67207 ,  H01L21/78

摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer including a plurality of integrated circuits includes forming a water soluble mask above the semiconductor wafer, the water soluble mask covering and protecting the integrated circuits. The method also includes baking the water soluble mask to increase the etch resistance of the water soluble mask. The method also includes, subsequent to baking the water soluble mask, patterning the water soluble mask with a laser scribing process to provide a water soluble patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also includes plasma etching the semiconductor wafer through the gaps in the water soluble patterned mask to singulate the integrated circuits.

摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 在一个实例中，对包括多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成水溶性掩模，所述水溶性掩模覆盖并保护集成电路。 该方法还包括烘烤水溶性面罩以增加水溶性面膜的耐蚀刻性。 该方法还包括在烘焙水溶性掩模之后，用激光划线工艺图案化水溶性掩模，以提供具有间隙的水溶性图案化掩模，暴露集成电路之间的半导体晶片的区域。 该方法还包括通过水溶性图案化掩模中的间隙等离子体蚀刻半导体晶片以对集成电路进行分离。

公开(公告)号：US20150311118A1

公开(公告)日：2015-10-29

申请号：US14272101

申请日：2014-05-07

申请人： Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

发明人： Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

IPC分类号： H01L21/78 ,  H01L21/683

CPC分类号： H01L21/78 ,  H01L21/67092 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/68377

摘要： Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of scribing a semiconductor wafer having a plurality of integrated circuits involves adhering a backside of a semiconductor wafer to an inner portion of a carrier tape of a substrate carrier that includes a tape frame mounted above the carrier tape. The method also involves overlaying a protective frame above a front side of the semiconductor wafer and above an exposed outer portion of the carrier tape, the protective frame having an opening exposing an inner region of the front side of the semiconductor wafer. The method also involves laser scribing the front side of the semiconductor wafer with the protective frame in place.

摘要翻译： 对具有多个集成电路的各晶片的切割半导体晶片的方法和装置进行说明。 在一个示例中，划片具有多个集成电路的半导体晶片的方法包括将半导体晶片的背面粘附到包括安装在载带上方的带框架的基板载体的载带的内部。 该方法还包括将保护框架覆盖在半导体晶片的前侧上方并且在载带的暴露的外部部分上方，保护框架具有暴露半导体晶片的前侧的内部区域的开口。 该方法还包括用保护框架将半导体晶片的前侧激光划片就位。