摘要:
The power brick assembly includes a solar energy collecting plate carried on a carrier for collecting solar energy to generate electrical energy. A first connecting port is mounted on the carrier so that the carrier is movable relative to the first connecting port. A mechanical rotary power generating unit includes a second connecting port mounted on a brick-like casing and connected electrically and detachably to the first connecting port so that the first connecting port is movable relative to the second connecting port. The brick-like casing receives a battery module for supplying electric power, a driving module for generating a mechanical rotary power output in response to an electric power input, and a control module operable to output the electric power input based on one of the electrical energy from the solar energy collecting plate and the electric power from the battery module.
摘要:
A non-volatile random access memory (NV-RAM) and an operation method thereof are provided. The NV-RAM includes a latch unit, a switch, and a first to fourth non-volatile memory elements. First terminals of the first and the third non-volatile memory elements respectively couple to a first voltage and a second voltage. A second terminal of the first non-volatile memory element and a first terminal of the second non-volatile memory element are coupled to a first terminal of the latch unit. A second terminal of the third non-volatile memory element and a first terminal of the fourth non-volatile memory element are coupled to a second terminal of the latch unit. Second terminals of the second and the fourth non-volatile memory element are coupled to a first terminal of the switch. A second terminal of the switch is coupled to a third voltage.
摘要:
A process variation detection apparatus and a process variation detection method are provided. The process variation detection apparatus includes a process variation detector and a compensation signal generator. The process variation detector includes a first process variation detection component, a second process variation detection component and a current comparator. The channel of the first process variation detection component is a first conductive type, and the channel of the second process variation detection component is a second conductive type, wherein the above-mentioned first conductive type is different from the second conductive type. The current comparator is connected to the first process variation detection component and the second process variation detection component for comparing the current difference between the two components and outputting a current comparison result. The compensation signal generator is connected to the process variation detector, and produces a corresponding compensation signal according to the current comparison result.
摘要:
A phase change memory with an operating current that can be gradually increased or gradually decreased. The phase change memory has a phase change storage element, a transistor, and a control circuit. The transistor is operable to adjust the operating current flowing through the phase change storage element. The transistor has a first terminal coupled to a voltage source, a second terminal coupled to the phase change storage element, and a control terminal receiving a control signal from the control circuit. The control circuit is specially designed to limit the transistor in a linear region.
摘要:
A phase change memory with an operating current that can be gradually increased or gradually decreased. The phase change memory has a phase change storage element, a transistor, and a control circuit. The transistor is operable to adjust the operating current flowing through the phase change storage element. The transistor has a first terminal coupled to a voltage source, a second terminal coupled to the phase change storage element, and a control terminal receiving a control signal from the control circuit. The control circuit is specially designed to limit the transistor in a linear region.
摘要:
A verification circuit for a phase change memory array is provided. A sensing unit senses a sensing voltage from a memory cell of the phase change memory array according to an enable signal. A comparator generates a comparing signal according to the sensing voltage and a reference voltage, so as to indicate whether the memory cell is in a reset state. A control unit generates a control signal according to the enable signal. An operating unit generates a first signal according to the control signal, so as to indicate whether the comparator is active. An adjustment unit provides a writing current to the cell, and increases the writing current according to the control signal until the comparing signal indicates that the memory cell is in a reset state.
摘要:
A method and an apparatus is provided for monitoring and adjusting a power level of a transmitting component. The method comprises receiving a request from a remote unit to provide a power level associated with a transmitting component, wherein the request is transmitted over a communications protocol. The method includes measuring a power level of a signal provided by the transmitting component in response to receiving the request from the remote unit, and providing the measured power level to the remote unit over the communications protocol.
摘要:
A voltage compensation circuit, a multi-level memory device with the same, and a voltage compensation method for reading the multi-level memory device are provided. When a memory cell is read, a reference voltage applied to the memory device is adjusted according to variation of characteristics of a drift resistance of a reference cell. The increased value of the reference voltage (i.e. a voltage difference) corresponds to a resistance variation caused by a drift condition. The drift compensation mechanism is adaptive to a compensation circuit of a read driver of the memory device, which can compensate variation of the voltage level when data is read from the memory cell. When the resistance drift occurs, a drift amount is calculated and is added to the reference voltage, in order to avoid the error in judgement caused by the resistance drift when the stored data is read out.
摘要:
A phase change memory (PCM) in which the phase change storage element is crystallized by a gradually increasing/decreasing operating current. The PCM comprises a switching circuit, the phase change storage element, a bit select switch, a pulse generating module, and a counting module. The switching circuit comprises a plurality of switches, selectively providing branch paths to an output terminal of a current source. The bit select switch controls the conduction between the phase change storage element and the output terminal of the current source. The pulse generating module outputs a pulse signal oscillating between high and low voltage levels. When enabled, the counting module counts the oscillations of the pulse signal, and outputs the count result by a set of digital data. The set of digital data are coupled to the switching circuit to control the switches therein.
摘要:
A technique for updating and maintaining a wireless communication database (40) includes several features. One feature is a search capability that facilitates, for example, an individual locating appropriate portions of the database to be updated in a desired manner. A platinum data image portion includes a relational database regarding various rules governing the contents of the wireless communication database. If a proposed change will violate any of these rules, an error message is provided. If a proposed change is acceptable, it will be implemented on an automated basis. A disclosed example includes the capability of scheduling proposed changes into the future, indicating a proposed change for one particular data field and instructing an automated update of all similar or related data fields in a particular manner.