公开(公告)号：US07989841B1

公开(公告)日：2011-08-02

申请号：US11831704

申请日：2007-07-31

申请人： Alexandre M. Bratkovski ,  Shih-Yuan Wang ,  Theodore I. Kamins

发明人： Alexandre M. Bratkovski ,  Shih-Yuan Wang ,  Theodore I. Kamins

IPC分类号： H01S5/00

CPC分类号： H01L31/1113

摘要： A fast injection optical switch is disclosed. The optical switch includes a thyristor having a plurality of layers including an outer doped layer and a switching layer. An area of the thyristor is configured to receive a light beam to be directed through at least one of the plurality of layers and exit the thyristor at a predetermined angle. At least two electrodes are coupled to the thyristor and configured to enable a voltage to be applied to facilitate carriers from the outer doped layer to be directed to the switching layer. Sufficient carriers can be directed to the switching layer to provide a change in refractive index of the switching layer to redirect at least a portion of the light beam to exit the thyristor at a deflection angle different from the predetermined angle.

摘要翻译： 公开了一种快速注入光开关。 光开关包括具有包括外掺杂层和开关层的多个层的晶闸管。 晶闸管的区域被配置为接收要被引导通过多个层中的至少一个层并且以预定角度离开晶闸管的光束。 至少两个电极耦合到晶闸管并且被配置为使得能够施加电压以便于来自外部掺杂层的载流子被引导到开关层。 足够的载体可以被引导到开关层，以提供开关层的折射率的变化，以使至少一部分光束以不同于预定角度的偏转角度离开晶闸管。

公开(公告)号：US07922927B2

公开(公告)日：2011-04-12

申请号：US11906819

申请日：2007-10-03

申请人： Theodore I. Kamins ,  Yong Chen ,  Patricia A. Beck

发明人： Theodore I. Kamins ,  Yong Chen ,  Patricia A. Beck

IPC分类号： C23F1/00

CPC分类号： B82Y10/00 ,  B81C1/00031 ,  C03C15/00 ,  C03C17/001 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31144

摘要： A technique is provided for forming a molecule or an array of molecules having a defined orientation relative to the substrate or for forming a mold for deposition of a material therein. The array of molecules is formed by dispersing them in an array of small, aligned holes (nanopores), or mold, in a substrate. Typically, the material in which the nanopores are formed is insulating. The underlying substrate may be either conducting or insulating. For electronic device applications, the substrate is, in general, electrically conducting and may be exposed at the bottom of the pores so that one end of the molecule in the nanopore makes electrical contact to the substrate. A substrate such as a single-crystal silicon wafer is especially convenient because many of the process steps to form the molecular array can use techniques well developed for semiconductor device and integrated-circuit fabrication.

摘要翻译： 提供了一种用于形成具有相对于基底具有限定取向的分子或分子阵列的技术，或用于形成用于在其中沉积材料的模具。 分子阵列通过将它们分散在基底中的小的，对准的孔（纳米孔）或模具的阵列中而形成。 通常，形成纳米孔的材料是绝缘的。 底层衬底可以是导电的或绝缘的。 对于电子器件应用，基底通常是导电的并且可以在孔的底部暴露，使得纳米孔中的分子的一端与基底电接触。 诸如单晶硅晶片的衬底是特别方便的，因为形成分子阵列的许多工艺步骤可以使用用于半导体器件和集成电路制造的技术。

公开(公告)号：US07803698B2

公开(公告)日：2010-09-28

申请号：US11697818

申请日：2007-04-09

申请人： Theodore I. Kamins

发明人： Theodore I. Kamins

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： B82B3/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L2221/1094

摘要： A method for controlling catalyst nanoparticle positioning includes establishing a mask layer on a post such that a portion of a vertical surface of the post remains exposed. The method further includes establishing a catalyst nanoparticle material on the mask layer and directly adjacent at least a portion of the exposed portion of the vertical surface.

摘要翻译： 用于控制催化剂纳米颗粒定位的方法包括在柱上建立掩模层，使得柱的垂直表面的一部分保持暴露。 该方法还包括在掩模层上建立催化剂纳米颗粒材料并且直接邻近垂直表面的暴露部分的至少一部分。

公开(公告)号：US20100187572A1

公开(公告)日：2010-07-29

申请号：US12360079

申请日：2009-01-26

申请人： Hans S. Cho ,  Theodore I. Kamins

发明人： Hans S. Cho ,  Theodore I. Kamins

IPC分类号： H01L29/267 ,  H01L21/20

CPC分类号： H01L29/0657 ,  B81C1/00142 ,  B81C1/00158 ,  B81C2201/0116 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/02667 ,  H01L21/764

摘要： Methods of fabricating a suspended mono-crystalline structure use annealing to induce surface migration and cause a surface transformation to produce the suspended mono-crystalline structure above a cavity from a heteroepitaxial layer provided on a crystalline substrate. The methods include forming a three dimensional (3-D) structure in the heteroepitaxial layer where the 3-D structure includes high aspect ratio elements. The 3-D structure is annealed at a temperature below a melting point of the heteroepitaxial layer. The suspended mono-crystalline structure may be a portion of a semiconductor-on-nothing (SON) substrate.

摘要翻译： 制备悬浮的单晶结构的方法使用退火以诱导表面迁移并引起表面转变，从在提供于晶体衬底上的异质外延层的空腔上产生悬浮的单晶结构。 所述方法包括在异质外延层中形成三维（3-D）结构，其中3-D结构包括高纵横比元素。 3-D结构在异质外延层的熔点以下的温度下退火。 悬浮的单晶结构可以是无半导体（SON）衬底的一部分。

公开(公告)号：US07764850B2

公开(公告)日：2010-07-27

申请号：US12243782

申请日：2008-10-01

申请人： Alexandre Bratkovski ,  Theodore I. Kamins

发明人： Alexandre Bratkovski ,  Theodore I. Kamins

IPC分类号： G02B6/26 ,  G02F1/025

CPC分类号： G02F1/025 ,  G02F2203/055 ,  G02F2203/15

摘要： An optical modulator and related methods are described. In accordance with one embodiment, the optical modulator comprises a waveguide for guiding an optical signal, and further comprises a ring resonator disposed in evanescent communication with the waveguide for at least one predetermined wavelength of the optical signal. The optical modulator further comprises a semiconductor pnpn junction structure that is at least partially coextensive with at least a portion of a resonant light path of the ring resonator. The optical modulator is configured such that the semiconductor pnpn junction structure receives an electrical control signal thereacross. The electrical control signal controls a free carrier population in the resonant light path where coextensive with the pnpn junction structure. A resonance condition of the ring resonator at the predetermined wavelength is thereby controlled by the electrical control signal, and the optical signal is thereby modulated according to the electrical control signal.

摘要翻译： 描述了光学调制器及相关方法。 根据一个实施例，光学调制器包括用于引导光学信号的波导，并且还包括环形谐振器，该环形谐振器设置成与光波导的至少一个预定波长的与波导的渐逝通信。 光调制器还包括半导体pnpn结结构，其至少部分地与环形谐振器的谐振光路的至少一部分共同延伸。 光调制器被配置为使得半导体pnpn结结构在其上接收电控信号。 电控制信号控制共振光路中与pnpn结结构共同延伸的自由载流子。 因此，通过电气控制信号控制环形谐振器在预定波长处的谐振状态，并且由此根据电气控制信号调制光信号。

公开(公告)号：US20100109101A1

公开(公告)日：2010-05-06

申请号：US11742310

申请日：2007-04-30

申请人： Theodore I. Kamins ,  Zhiyong Li ,  Duncan R. Stewart

发明人： Theodore I. Kamins ,  Zhiyong Li ,  Duncan R. Stewart

IPC分类号： H01L29/84 ,  H01L21/62

CPC分类号： H01L29/0665 ,  B81B2201/0271 ,  B81C1/00142 ,  B82Y10/00 ,  B82Y30/00 ,  H01L23/53276 ,  H01L29/0673 ,  H01L29/0676 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of positioning a catalyst nanoparticle that facilitates nanowire growth for nanowire-based device fabrication employs a structure having a vertical sidewall formed on a substrate. The methods include forming the structure, forming a targeted region in a surface of either the structure or the substrate, and forming a catalyst nanoparticle in the targeted region using one of a variety of techniques. The techniques control the position of the catalyst nanoparticle for subsequent nanowire growth. A resonant sensor system includes a nanowire-based resonant sensor and means for accessing the nanowire. The sensor includes an electrode and a nanowire resonator. The electrode is electrically isolated from the substrate. One or more of the substrate is electrically conductive, the nanowire resonator is electrically conductive, and the sensor further comprises another electrode. The nanowire resonator responds to an environmental change by displaying a change in oscillatory behavior.

摘要翻译： 定位促进用于纳米线的器件制造的纳米线生长的催化剂纳米颗粒的方法采用具有形成在衬底上的垂直侧壁的结构。 所述方法包括形成结构，在结构或基底的表面中形成目标区域，并使用各种技术之一在目标区域中形成催化剂纳米颗粒。 该技术控制催化剂纳米颗粒在随后的纳米线生长中的位置。 谐振传感器系统包括基于纳米线的谐振传感器和用于访问纳米线的装置。 传感器包括电极和纳米线谐振器。 电极与衬底电隔离。 衬底中的一个或多个是导电的，纳米线谐振器是导电的，并且传感器还包括另一个电极。 纳米线谐振器通过显示振荡行为的变化来响应环境变化。

公开(公告)号：US07659631B2

公开(公告)日：2010-02-09

申请号：US11548994

申请日：2006-10-12

申请人： Theodore I. Kamins ,  Shashank Sharma

发明人： Theodore I. Kamins ,  Shashank Sharma

IPC分类号： H01L23/538 ,  H01L21/768

CPC分类号： H01L23/49827 ,  H01L2224/13017 ,  H01L2224/1308 ,  H01L2924/0002 ,  H01L2924/00

摘要： A hybrid-scale electronic circuit, an internal electrical connection and a method of electrically interconnecting employ an interconnect having a tapered shape to electrically connect between different-scale circuits. The interconnect has a first end with an end dimension that is larger than an end dimension of an opposite, second end of the interconnect. The larger first end of the interconnect connects to an electrical contact of a micro-scale circuit and the second end of the interconnect connects to an electrical contact of a nano-scale circuit.

摘要翻译： 混合比例电子电路，内部电连接和电互连的方法采用具有锥形形状的互连以在不同尺度的电路之间电连接。 互连具有第一端，端部尺寸大于互连的相对的第二端的端部尺寸。 互连的较大的第一端连接到微尺度电路的电接触，并且互连的第二端连接到纳米级电路的电接触。

公开(公告)号：US20090273293A1

公开(公告)日：2009-11-05

申请号：US12243117

申请日：2008-10-01

申请人： Alexandre Bratkovski ,  Shih-Yuan Wang ,  Michael Tan ,  Theodore I. Kamins

发明人： Alexandre Bratkovski ,  Shih-Yuan Wang ,  Michael Tan ,  Theodore I. Kamins

IPC分类号： H05B37/00 ,  H01L33/00

CPC分类号： H01L33/0037 ,  H01L33/20 ,  H01L33/385 ,  H05B33/0818 ,  H05B33/0821 ,  H05B37/0272

摘要： One embodiment of the present invention relates to a light-emitting diode having one or more light-emitting layers, a pair of electrodes disposed on the light-emitting diode so that an operating voltage can be applied to generate light from the one or more light-emitting layers, and at least one external electrode in electronic communication with the one or more light-emitting layers. Applying an appropriate voltage to the at least one external electrodes at about the time the operating voltage is terminated extracts excess electrons from the one or more light-emitting layers and reduces the duration of electron-hole recombination during the time period over which the operating voltage is turned off.

摘要翻译： 本发明的一个实施例涉及具有一个或多个发光层的发光二极管，设置在发光二极管上的一对电极，使得可以施加工作电压以产生来自一个或多个光的光 以及与所述一个或多个发光层电连通的至少一个外部电极。 大约在工作电压终止时将适当的电压施加到至少一个外部电极，从一个或多个发光层提取出多余的电子，并减少在工作电压的时间段内的电子 - 空穴复合的持续时间 已关闭

公开(公告)号：US20090179192A1

公开(公告)日：2009-07-16

申请号：US12243182

申请日：2008-10-01

申请人： Theodore I. Kamins

发明人： Theodore I. Kamins

IPC分类号： H01L29/66 ,  H01L21/329

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/861 ,  H01L31/0352 ,  H01L33/18

摘要： A nanowire-based device and method employ removal of residual carriers. The nanowire-based device includes a semiconductor nanowire having a semiconductor junction, and a residual carrier sink. The residual carrier sink is located at or adjacent to the semiconductor nanowire near the semiconductor junction and employs one or both of enhanced recombination and direct extraction of the residual carriers. The method includes providing a semiconductor nanowire, forming a semiconductor junction within the semiconductor nanowire, forming a residual carrier sink, and removing residual carriers from the semiconductor junction region using the residual carrier sink.

摘要翻译： 基于纳米线的器件和方法采用去除残留载流子。 基于纳米线的器件包括具有半导体结的半导体纳米线和残余载流子阱。 残余载流子阱位于或靠近半导体结附近的半导体纳米线，并采用增强复合和直接提取残余载流子之一或两者。 该方法包括提供半导体纳米线，在半导体纳米线内形成半导体结，形成残余载流子阱，以及使用残余载流子阱从半导体结区域去除残余载流子。

公开(公告)号：US20090108387A1

公开(公告)日：2009-04-30

申请号：US12243155

申请日：2008-10-01

申请人： Nathaniel Quitoriano ,  Theodore I. Kamins

发明人： Nathaniel Quitoriano ,  Theodore I. Kamins

IPC分类号： H01L31/0232 ,  H01L31/0248 ,  H01L21/02

CPC分类号： H01L31/0248

摘要： A semiconductor device which has controlled optical absorption includes a substrate, and a semiconductor layer supported by the substrate. The semiconductor has variable optical absorption at a predetermined optical frequency in relationship to a bandgap of the semiconductor layer. Also included is a strain application structure coupled to the semiconductor layer to create a strain in the semiconductor layer to change the semiconductor bandgap.

摘要翻译： 具有受控光吸收的半导体器件包括衬底和由衬底支撑的半导体层。 半导体在与半导体层的带隙有关的预定光频率下具有可变的光吸收。 还包括耦合到半导体层的应变施加结构，以在半导体层中产生应变以改变半导体带隙。