公开(公告)号：US07936955B2

公开(公告)日：2011-05-03

申请号：US12780601

申请日：2010-05-14

申请人： Guy T. Blalock ,  Howard E. Rhodes ,  Vishnu K. Agarwal ,  Gurtej Singh Sandhu ,  James S. Foresi ,  Jean-Francois Viens ,  Dale G. Fried

发明人： Guy T. Blalock ,  Howard E. Rhodes ,  Vishnu K. Agarwal ,  Gurtej Singh Sandhu ,  James S. Foresi ,  Jean-Francois Viens ,  Dale G. Fried

IPC分类号： G02B6/26

CPC分类号： G02F1/025 ,  G02B6/125 ,  G02B6/136 ,  G02B2006/12107 ,  G02B2006/12164 ,  G02F1/0147 ,  G02F2203/15

摘要： A waveguide and resonator are formed on a lower cladding of a thermo optic device, each having a formation height that is substantially equal. Thereafter, the formation height of the waveguide is attenuated. In this manner, the aspect ratio as between the waveguide and resonator in an area where the waveguide and resonator front or face one another decreases (in comparison to the prior art) thereby restoring the synchronicity between the waveguide and the grating and allowing higher bandwidth configurations to be used. The waveguide attenuation is achieved by photomasking and etching the waveguide after the resonator and waveguide are formed. In one embodiment the photomasking and etching is performed after deposition of the upper cladding. In another, it is performed before the deposition. Thermo optic devices, thermo optic packages and fiber optic systems having these waveguides are also taught.

摘要翻译： 波导和谐振器形成在热光器件的下包层上，每个具有基本上相等的形成高度。 此后，波导的形成高度被衰减。 以这种方式，波导和谐振器在波导和谐振器前面或彼此面对的区域（与现有技术相比）中的波导和谐振器之间的纵横比，从而恢复波导和光栅之间的同步性并允许更高的带宽配置 要使用的。 在形成谐振器和波导之后，通过光掩模和蚀刻波导来实现波导衰减。 在一个实施例中，在沉积上部包层之后进行光掩模和蚀刻。 另一方面，它是在沉积之前进行的。 还教导了具有这些波导的热光器件，热光封装和光纤系统。

公开(公告)号：US20110095188A1

公开(公告)日：2011-04-28

申请号：US12984452

申请日：2011-01-04

申请人： Yin Qian ,  Howard E. Rhodes ,  Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao

发明人： Yin Qian ,  Howard E. Rhodes ,  Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao

IPC分类号： H01L31/101

CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14652

摘要： A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer.

摘要翻译： 背面照明成像传感器包括半导体层和红外检测层。 半导体层具有前表面和后表面。 成像像素包括形成在半导体层内的光电二极管区域。 红外线检测层设置在半导体层的前表面上方，以从半导体层的背面接收从成像传感器传播的红外光。

公开(公告)号：US20110089517A1

公开(公告)日：2011-04-21

申请号：US12852990

申请日：2010-08-09

申请人： Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

发明人： Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

IPC分类号： H01L27/146

CPC分类号： H01L27/14632 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/1464

摘要： An image sensor includes a device wafer substrate of a device wafer, a device layer of the device wafer, and optionally a heat control structure and/or a heat sink. The device layer is disposed on a frontside of the device wafer substrate and includes a plurality of photosensitive elements disposed within a pixel array region and peripheral circuitry disposed within a peripheral circuits region. The photosensitive elements are sensitive to light incident on a backside of the device wafer substrate. The heat control structure is disposed within the device wafer substrate and thermally isolates the pixel array region from the peripheral circuits region to reduce heat transfer between the peripheral circuits region and the pixel array region. The heat sink conducts heat away from the device layer.

摘要翻译： 图像传感器包括器件晶片的器件晶片衬底，器件晶片的器件层，以及任选的热控结构和/或散热器。 器件层设置在器件晶片衬底的前侧，并且包括设置在像素阵列区域内的多个感光元件和设置在外围电路区域内的外围电路。 光敏元件对入射到器件晶片衬底背面的光敏感。 热控制结构设置在器件晶片衬底内，并且将像素阵列区域与外围电路区域隔离，以减少外围电路区域和像素阵列区域之间的热传递。 散热器将热量从器件层传导出去。

公开(公告)号：US20110089311A1

公开(公告)日：2011-04-21

申请号：US12582585

申请日：2009-10-20

申请人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Howard E. Rhodes

发明人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Howard E. Rhodes

IPC分类号： H01L31/112 ,  H01L27/00

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

摘要： An image sensor provides high scalability and reduced image lag. The sensor includes a first imaging pixel that has a first photodiode region formed in a substrate of the image sensor. The sensor also includes a first vertical transfer transistor coupled to the first photodiode region. The first vertical transfer transistor can be used to establish an active channel. The active channel typically extends along the length of the first vertical transfer transistor and couples the first photodiode region to a floating diffusion.

摘要翻译： 图像传感器提供高可扩展性和减少图像滞后。 传感器包括具有形成在图像传感器的基板中的第一光电二极管区域的第一成像像素。 传感器还包括耦合到第一光电二极管区域的第一垂直传输晶体管。 第一垂直传输晶体管可用于建立有源通道。 有源沟道通常沿着第一垂直传输晶体管的长度延伸，并将第一光电二极管区域耦合到浮动扩散。

公开(公告)号：US07888763B2

公开(公告)日：2011-02-15

申请号：US12203858

申请日：2008-09-03

申请人： Yin Qian ,  Howard E. Rhodes ,  Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao

发明人： Yin Qian ,  Howard E. Rhodes ,  Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14652

摘要： A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer.

摘要翻译： 背面照明成像传感器包括半导体层和红外检测层。 半导体层具有前表面和后表面。 成像像素包括形成在半导体层内的光电二极管区域。 红外线检测层设置在半导体层的前表面上方，以从半导体层的背面接收从成像传感器传播的红外光。

公开(公告)号：US07875918B2

公开(公告)日：2011-01-25

申请号：US12430006

申请日：2009-04-24

申请人： Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

发明人： Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC分类号： H01L31/062

CPC分类号： H01L27/1463 ,  H01L27/14601

摘要： An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type.

摘要翻译： 图像传感器像素包括基板，第一外延层，集电极层，第二外延层和光收集区域。 衬底被掺杂以具有第一导电类型。 第一外延层设置在衬底上并掺杂以具有第一导电类型。 集电极层选择性地设置在第一外延层的至少一部分上并被掺杂以具有第二导电类型。 第二外延层设置在集电极层上并掺杂以具有第一导电类型。 光收集区域收集光生电荷载流子并且设置在第二外延层内。 光收集区域也被掺杂以具有第二导电类型。

公开(公告)号：US20100271524A1

公开(公告)日：2010-10-28

申请号：US12430006

申请日：2009-04-24

申请人： Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

发明人： Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC分类号： H04N5/335 ,  H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14601

摘要： An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type.

摘要翻译： 图像传感器像素包括基板，第一外延层，集电极层，第二外延层和光收集区域。 衬底被掺杂以具有第一导电类型。 第一外延层设置在衬底上并掺杂以具有第一导电类型。 集电极层选择性地设置在第一外延层的至少一部分上并被掺杂以具有第二导电类型。 第二外延层设置在集电极层上并掺杂以具有第一导电类型。 光收集区域收集光生电荷载流子并且设置在第二外延层内。 光收集区域也被掺杂以具有第二导电类型。

公开(公告)号：US20100201859A1

公开(公告)日：2010-08-12

申请号：US12704769

申请日：2010-02-12

申请人： Chandra Mouli ,  Howard E. Rhodes

发明人： Chandra Mouli ,  Howard E. Rhodes

IPC分类号： H04N5/335 ,  H01L31/18

CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/1463 ,  H01L27/14689

摘要： A pinned photodiode with improved short wavelength light response. In exemplary embodiments of the invention, a gate oxide is formed over a doped, buried region in a semiconductor substrate. A gate conductor is formed on top of the gate oxide. The gate conductor is transparent, and in one embodiment is a layer of indium-tin oxide. The transparent conductor can be biased to reduce the need for a surface dopant in creating a pinned photodiode region. The biasing of the transparent conductor produces a hole-rich accumulation region near the surface of the substrate. The gate conductor material permits a greater amount of charges from short wavelength light to be captured in the photo-sensing region in the substrate, and thereby increases the quantum efficiency of the photosensor.

摘要翻译： 具有改善的短波长光响应的钉扎光电二极管。 在本发明的示例性实施例中，在半导体衬底中的掺杂的掩埋区域上形成栅极氧化物。 栅极导体形成在栅极氧化物的顶部。 栅极导体是透明的，在一个实施例中是一层氧化铟锡。 透明导体可以被偏置以减少在产生钉扎光电二极管区域时对表面掺杂剂的需要。 透明导体的偏压在基板的表面附近产生一个富含孔的堆积区域。 栅极导体材料允许在衬底中的光敏区域中捕获较短波长的光的更大量的电荷，从而提高光电传感器的量子效率。

公开(公告)号：US07749798B2

公开(公告)日：2010-07-06

申请号：US11094363

申请日：2005-03-31

申请人： Howard E. Rhodes ,  Richard A. Mauritzson ,  Inna Patrick

发明人： Howard E. Rhodes ,  Richard A. Mauritzson ,  Inna Patrick

IPC分类号： H01L21/00

CPC分类号： H01L27/14643 ,  H01L27/14601 ,  H01L31/03529 ,  H01L31/103 ,  Y02E10/50

摘要： An image sensing circuit and method is disclosed, wherein a photodiode is formed in a substrate through a series of angled implants. The photodiode is formed by a first, second and third implant, wherein at least one of the implants are angled so as to allow the resulting photodiode to extend out beneath an adjoining gate. Under an alternate embodiment, a fourth implant is added, under an increased implant angle, in the region of the second implant. The resulting photodiode structure substantially reduces or eliminates transfer gate subthreshold leakage.

摘要翻译： 公开了一种图像感测电路和方法，其中通过一系列成角度的植入物在基板中形成光电二极管。 光电二极管由第一，第二和第三植入物形成，其中植入物中的至少一个是成角度的，以便使得到的光电二极管延伸出邻近的栅极之下。 在替代实施例中，在第二植入物的区域内以增加的植入角度添加第四植入物。 所得到的光电二极管结构基本上减少或消除传输门极阈值泄漏。

公开(公告)号：US20100165134A1

公开(公告)日：2010-07-01

申请号：US12297608

申请日：2007-04-17

申请人： Edward R. Dowski, JR. ,  Paulo E.X. Silveira ,  George C. Barnes, IV ,  Vladislav V. Chumachenko ,  Dennis W. Dobbs ,  Regis S. Fan ,  Gregory E. Johnson ,  Mondrag Scepanovic ,  Satoru Tachihara ,  Christopher J. Linnen ,  Inga Tamayo ,  Donald Combs ,  Howard E. Rhodes ,  James He ,  John J. Mader ,  Goran M. Rauker ,  Kenneth Kubala ,  Mark Meloni ,  Brian Schwartz ,  Robert Commack ,  Michael Hepp ,  Kenneth Ashley Macon ,  Gary L. Duerksen

发明人： Edward R. Dowski, JR. ,  Paulo E.X. Silveira ,  George C. Barnes, IV ,  Vladislav V. Chumachenko ,  Dennis W. Dobbs ,  Regis S. Fan ,  Gregory E. Johnson ,  Mondrag Scepanovic ,  Satoru Tachihara ,  Christopher J. Linnen ,  Inga Tamayo ,  Donald Combs ,  Howard E. Rhodes ,  James He ,  John J. Mader ,  Goran M. Rauker ,  Kenneth Kubala ,  Mark Meloni ,  Brian Schwartz ,  Robert Commack ,  Michael Hepp ,  Kenneth Ashley Macon ,  Gary L. Duerksen

IPC分类号： H04N5/225 ,  H01L31/18 ,  H01L27/146

CPC分类号： G06F17/504 ,  B24B13/06 ,  B24B49/00 ,  G02B3/0025 ,  G02B3/0031 ,  G02B3/0068 ,  G02B3/0075 ,  G02B7/022 ,  G02B13/0025 ,  G02B13/006 ,  G02B13/0085 ,  G02B27/0025 ,  G06F17/5081 ,  G06F2217/06 ,  G06F2217/12 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687 ,  H01L2924/0002 ,  H04N5/2257 ,  H01L2924/00

摘要： Arrayed imaging systems include an array of detectors formed with a common base and a first array of layered optical elements, each one of the layered optical elements being optically connected with a detector in the array of detectors.

摘要翻译： 阵列成像系统包括形成有公共基底和分层光学元件的第一阵列的检测器阵列，每个分层光学元件与检测器阵列中的检测器光学连接。