公开(公告)号：US07944753B2

公开(公告)日：2011-05-17

申请号：US12912517

申请日：2010-10-26

申请人： Yong-Kyu Lee ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Jung-Ho Moon ,  Soung-Youb Ha

发明人： Yong-Kyu Lee ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Jung-Ho Moon ,  Soung-Youb Ha

IPC分类号： G11C16/04

CPC分类号： G11C16/0433 ,  G11C16/26 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11529

摘要： In a method of reading data in an EEPROM cell, a bit line voltage for reading is applied to the EEPROM cell including a memory transistor and a selection transistor. A first voltage is applied to a sense line of the memory transistor. A second voltage greater than the first voltage is applied to a word line of the selection transistor. A current passing through the EEPROM cell is compared with a predetermined reference current to read the data stored in the EEPROM cell. An on-cell current of the EEPROM cell may be increased in an erased state and the data in the cell may be readily discriminated.

摘要翻译： 在EEPROM单元中读取数据的方法中，用于读取的位线电压被施加到包括存储晶体管和选择晶体管的EEPROM单元。 第一电压被施加到存储晶体管的感测线。 大于第一电压的第二电压被施加到选择晶体管的字线。 将通过EEPROM单元的电流与预定的参考电流进行比较，以读取存储在EEPROM单元中的数据。 可以在擦除状态下增加EEPROM单元的通电池电流，并且可以容易地区分单元中的数据。

公开(公告)号：US07839680B2

公开(公告)日：2010-11-23

申请号：US12192839

申请日：2008-08-15

申请人： Yong-Kyu Lee ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Jung-Ho Moon ,  Soung-Youb Ha

发明人： Yong-Kyu Lee ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Jung-Ho Moon ,  Soung-Youb Ha

IPC分类号： G11C16/04

CPC分类号： G11C16/0433 ,  G11C16/26 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11529

摘要： In a method of reading data in an EEPROM cell, a bit line voltage for reading is applied to the EEPROM cell including a memory transistor and a selection transistor. A first voltage is applied to a sense line of the memory transistor. A second voltage greater than the first voltage is applied to a word line of the selection transistor. A current passing through the EEPROM cell is compared with a predetermined reference current to read the data stored in the EEPROM cell. An on-cell current of the EEPROM cell may be increased in an erased state and the data in the cell may be readily discriminated.

摘要翻译： 在EEPROM单元中读取数据的方法中，用于读取的位线电压被施加到包括存储晶体管和选择晶体管的EEPROM单元。 第一电压被施加到存储晶体管的感测线。 大于第一电压的第二电压被施加到选择晶体管的字线。 将通过EEPROM单元的电流与预定的参考电流进行比较，以读取存储在EEPROM单元中的数据。 可以在擦除状态下增加EEPROM单元的通电池电流，并且可以容易地区分单元中的数据。

公开(公告)号：US20100285641A1

公开(公告)日：2010-11-11

申请号：US12836066

申请日：2010-07-14

申请人： Yong-Kyu Lee ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Young-Ho Kim ,  Myung-Jo Chun ,  Jung-Ho Moon

发明人： Yong-Kyu Lee ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Young-Ho Kim ,  Myung-Jo Chun ,  Jung-Ho Moon

IPC分类号： H01L21/8238 ,  H01L21/8234

CPC分类号： H01L27/105 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/1052 ,  H01L27/11266 ,  H01L27/11293

摘要： A mask read-only memory (ROM) device, which can stably output data, includes an on-cell and an off-cell. The on-cell includes an on-cell gate structure on a substrate and an on-cell junction structure within the substrate. The off-cell includes an off-cell gate structure on the substrate and an off-cell junction structure within the substrate. The on-cell gate structure includes an on-cell gate insulating film, an on-cell gate electrode and an on-cell gate spacer. The on-cell junction structure includes first and second on-cell ion implantation regions of a first polarity and third and fourth on-cell ion implantation regions of a second polarity. The off-cell gate structure includes an off-cell gate insulating film, an off-cell gate electrode and an off-cell gate spacer. The off-cell junction structure includes first and second off-cell ion implantation regions of the first polarity and a third off-cell ion implantation region of the second polarity.

摘要翻译： 可以稳定地输出数据的掩模只读存储器（ROM）装置包括接通电池和截止电池。 开放单元包括衬底上的孔上栅极结构和衬底内的电池单元结结构。 离子电池包括在衬底上的离子电池栅极结构和衬底内的细胞外结合结构。 单体栅极结构包括单元间栅极绝缘膜，单晶体栅极电极和单元间栅极间隔物。 该单电池结结构包括具有第一极性的第一和第二开孔离子注入区和第二极性的第三和第四接通电离子注入区。 离群栅极结构包括离子栅极绝缘膜，离子阱栅极电极和非电池栅极间隔物。 离电池结结构包括具有第一极性的第一和第二离子外离子注入区域和第二极性的第三离子间离子注入区域。

公开(公告)号：US20100059888A1

公开(公告)日：2010-03-11

申请号：US12590482

申请日：2009-11-09

申请人： Yong-Kyu Lee ,  Hee-Seog JEON ,  Jeong-Uk HAN ,  Young-Ho Kim ,  Myung-Jo Chun

发明人： Yong-Kyu Lee ,  Hee-Seog JEON ,  Jeong-Uk HAN ,  Young-Ho Kim ,  Myung-Jo Chun

IPC分类号： H01L23/532 ,  H01L23/48

CPC分类号： H01L27/1021

摘要： A mask read-only memory (ROM) includes a dielectric layer formed on a substrate and a plurality of first conductive lines formed on the dielectric layer. A plurality of diodes are formed in the first conductive lines, and a plurality of final vias are formed for a first set of the diodes each representing a first type of memory cell, with no final via being formed for a second set of diodes each representing a second type of memory cell. Each of a plurality of second conductive lines is formed over a column of the diodes.

摘要翻译： 掩模只读存储器（ROM）包括形成在基板上的电介质层和形成在电介质层上的多个第一导电线。 在第一导线中形成多个二极管，并且为第一组二极管形成多个最终通孔，每个二极管表示第一类型的存储单元，没有形成用于第二组二极管的最终通孔，每个二极管表示 第二种类型的存储单元。 多个第二导电线中的每一个形成在二极管的列上。

公开(公告)号：US20090059664A1

公开(公告)日：2009-03-05

申请号：US12192839

申请日：2008-08-15

申请人： Yong-Kyu Lee ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Jung-Ho Moon ,  Soung-Youb Ha

发明人： Yong-Kyu Lee ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Jung-Ho Moon ,  Soung-Youb Ha

IPC分类号： G11C16/04 ,  G11C7/00 ,  G11C16/06 ,  H01L21/336

CPC分类号： G11C16/0433 ,  G11C16/26 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11529

摘要： In a method of reading data in an EEPROM cell, a bit line voltage for reading is applied to the EEPROM cell including a memory transistor and a selection transistor. A first voltage is applied to a sense line of the memory transistor. A second voltage greater than the first voltage is applied to a word line of the selection transistor. A current passing through the EEPROM cell is compared with a predetermined reference current to read the data stored in the EEPROM cell. An on-cell current of the EEPROM cell may be increased in an erased state and the data in the cell may be readily discriminated.

摘要翻译： 在EEPROM单元中读取数据的方法中，用于读取的位线电压被施加到包括存储晶体管和选择晶体管的EEPROM单元。 第一电压被施加到存储晶体管的感测线。 大于第一电压的第二电压被施加到选择晶体管的字线。 将通过EEPROM单元的电流与预定的参考电流进行比较，以读取存储在EEPROM单元中的数据。 可以在擦除状态下增加EEPROM单元的通电池电流，并且可以容易地区分单元中的数据。

公开(公告)号：US20080093646A1

公开(公告)日：2008-04-24

申请号：US11602075

申请日：2006-11-20

申请人： Yong-Kyu Lee ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Young Ho Kim ,  Myung-Jo Chun

发明人： Yong-Kyu Lee ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Young Ho Kim ,  Myung-Jo Chun

IPC分类号： H01L29/76

CPC分类号： H01L29/7881 ,  H01L29/66825

摘要： A non-volatile memory device comprises a semiconductor substrate having source/drain regions formed at both ends of a channel region, a gate structure forming an offset region by being separated a predetermined distance from the source region and comprising a charge accumulation region and a control gate sequentially deposited in the channel region to at least partially overlap the drain region, and a spacer arranged at each of both side walls of the gate structure. A threshold voltage value of the offset region changes depending on a dielectric constant of the spacer.

摘要翻译： 一种非易失性存储器件包括：半导体衬底，其具有形成在沟道区两端的源极/漏极区;栅极结构，通过与源极区隔开预定的距离而形成偏移区，并且包括电荷累积区和控制 顺序地沉积在沟道区域中以与漏极区域至少部分重叠的栅极以及布置在栅极结构的两个侧壁中的每一个侧壁处的间隔物。 偏移区域的阈值电压值根据间隔物的介电常数而变化。

公开(公告)号：US20080080244A1

公开(公告)日：2008-04-03

申请号：US11818238

申请日：2007-06-13

申请人： Yong-Kyu Lee ,  Myung-Jo Chun ,  Young-Ho Kim ,  Hee-Seog Jeon ,  Jeong-Uk Han

发明人： Yong-Kyu Lee ,  Myung-Jo Chun ,  Young-Ho Kim ,  Hee-Seog Jeon ,  Jeong-Uk Han

IPC分类号： G11C11/34 ,  G11C7/00

CPC分类号： G11C16/0433 ,  G11C8/10 ,  G11C16/08 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11534

摘要： A non-volatile integrated circuit memory device may include a semiconductor substrate having first and second electrically isolated wells of a same conductivity type. A first plurality of non-volatile memory cell transistors may be provided on the first well, and a second plurality of non-volatile memory cell transistors may be provided on the second well. A local control gate line may be electrically coupled with the first and second pluralities of non-volatile memory cell transistors, and a group selection transistor may be electrically coupled between the local control gate line and a global control gate line. More particularly, the group selection transistor may be configured to electrically couple and decouple the local control gate line and the global control gate line responsive to a group selection gate signal applied to a gate of the group selection transistor. Related methods and systems are also discussed.

摘要翻译： 非易失性集成电路存储器件可以包括具有相同导电类型的第一和第二电隔离阱的半导体衬底。 可以在第一阱上提供第一多个非易失性存储单元晶体管，并且可以在第二阱上提供第二多个非易失性存储单元晶体管。 本地控制栅极线可以与第一和第二多个非易失性存储单元晶体管电耦合，并且组选择晶体管可以电耦合在本地控制栅极线和全局控制栅极线之间。 更具体地，组选择晶体管可以被配置为响应于施加到组选择晶体管的栅极的组选择栅极信号来电耦合和去耦合本地控制栅极线和全局控制栅极线。 还讨论了相关方法和系统。

公开(公告)号：US20080001204A1

公开(公告)日：2008-01-03

申请号：US11647711

申请日：2006-12-29

申请人： Yong-Kyu Lee ,  Hee-Seog Jeon ,  Jeong-Uk Han

发明人： Yong-Kyu Lee ,  Hee-Seog Jeon ,  Jeong-Uk Han

IPC分类号： H01L29/76

CPC分类号： H01L27/115 ,  G11C16/0433 ,  H01L27/11521 ,  H01L27/11524

摘要： A non-volatile memory device and a method for fabricating the non-volatile memory device. The non-volatile memory device includes a memory cell located in a first conductive region and has a memory transistor, a selection transistor and a high voltage switching device located in a second conductive region close to the first conductive region. The memory cell is controlled by the high voltage switching device. At least one of the high voltage switching device, the memory transistor, or the selection transistor has a recessed channel region.

摘要翻译： 一种非易失性存储器件和用于制造非易失性存储器件的方法。 非易失性存储器件包括位于第一导电区域中的存储单元，并且具有位于靠近第一导电区域的第二导电区域中的存储晶体管，选择晶体管和高压开关器件。 存储单元由高电压开关装置控制。 高压开关器件，存储晶体管或选择晶体管中的至少一个具有凹陷沟道区域。

公开(公告)号：US07297600B2

公开(公告)日：2007-11-20

申请号：US11020899

申请日：2004-12-23

申请人： Chang-Woo Oh ,  Dong-Gun Park ,  Dong-Won Kim ,  Yong-Kyu Lee

发明人： Chang-Woo Oh ,  Dong-Gun Park ,  Dong-Won Kim ,  Yong-Kyu Lee

IPC分类号： H01L21/336

CPC分类号： H01L29/7854 ,  B82Y10/00 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66795 ,  H01L29/78645

摘要： A method of forming a fin field effect transistor on a semiconductor substrate includes forming a fin-shaped active region vertically protruding from the substrate. An oxide layer is formed on a top surface and opposing sidewalls of the fin-shaped active region. An oxidation barrier layer is formed on the opposing sidewalls of the fin-shaped active region and is planarized to a height no greater than about a height of the oxide layer to form a fin structure. The fin structure is oxidized to form a capping oxide layer on the top surface of the fin-shaped active region and to form at least one curved sidewall portion proximate the top surface of the fin-shaped active region. The oxidation barrier layer has a height sufficient to reduce oxidation on the sidewalls of the fin-shaped active region about halfway between the top surface and a base of the fin-shaped active region. Related devices are also discussed.

摘要翻译： 在半导体衬底上形成鳍状场效应晶体管的方法包括形成从衬底垂直突出的鳍状有源区。 在鳍状有源区的上表面和相对侧壁上形成氧化物层。 在翅片状有源区域的相对的侧壁上形成氧化阻挡层，并将其平坦化至不大于氧化物层高度的高度以形成翅片结构。 翅片结构被氧化以在翅片形有源区的顶表面上形成封盖氧化层，并且在翅片形有源区的顶表面附近形成至少一个弯曲的侧壁部分。 氧化阻挡层的高度足以减小翅片形有源区的侧壁上的氧化，大约在鳍状有源区的顶表面和基底之间的一半处。 还讨论了相关设备。

公开(公告)号：US06589943B2

公开(公告)日：2003-07-08

申请号：US09852131

申请日：2001-05-09

申请人： Youngro Byun ,  Yong-Kyu Lee

发明人： Youngro Byun ,  Yong-Kyu Lee

IPC分类号： A61K31727

CPC分类号： C08B37/0075 ,  A61K31/727 ,  A61K47/542 ,  A61K47/554 ,  C08B37/00 ,  Y10S977/773 ,  Y10S977/775 ,  Y10S977/905 ,  Y10S977/915

摘要： Formulations for enhanced mucosal absorption of heparin are disclosed. In one embodiment, a powdered heparin composition is made by dissolving an amphiphilic heparin derivative including heparin covalently bonded to a hydrophobic agent in a water phase, dispersing the water phase in an organic phase such that an emulsion is formed, and drying the emulsion. In another embodiment, an amorphiphilic heparin derivative dispersed in an oil phase is made by dissolving the amphiphilic heparin derivative in water or a water/organic co-solvent, dispersing the water or co-solvent in the oil phase, and evaporating the water or co-solvent. In another embodiment, heparin-containing nanoparticles having surfactant molecules associated with a hydrophobic agent on the outside of the nanoparticles are made by dissolving the amphiphilic heparin derivative in an aqueous solvent, mixing the surfactant with the aqueous solvent, and disrupting nanoparticles of the amphiphilic heparin derivative. Compositions made according to these methods are also described.

摘要翻译： 公开了用于增强肝素粘膜吸收的制剂。 在一个实施方案中，通过将包含共价键合在疏水剂上的肝素的两亲性肝素衍生物溶解在水相中来制备粉状肝素组合物，将水相分散在有机相中，形成乳液，并干燥乳液。 在另一个实施方案中，通过将两亲肝素衍生物溶解在水或水/有机共溶剂中，将水或助溶剂分散在油相中并蒸发水或共混物来制备分散在油相中的非晶性肝素衍生物 -溶剂。 在另一个实施方案中，通过将两亲性肝素衍生物溶解在水性溶剂中，将表面活性剂与水性溶剂混合，并破坏两性肝素的纳米颗粒，制备具有与纳米颗粒外侧疏水剂相关的表面活性剂分子的含肝素的纳米颗粒 衍生物。 还描述了根据这些方法制备的组合物。