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51 条记录 (耗时 0.063 秒)

    Prediction of uniformity of a wafer
    42.
    发明授权
    Prediction of uniformity of a wafer 失效
    预测晶圆的均匀性

    公开(公告)号：US07634325B2

    公开(公告)日：2009-12-15

    申请号：US11744107

    申请日：2007-05-03

    申请人： Jean Wang ,  Francis Ko ,  Ping-Hsu Chen ,  Henry Lo ,  Chih-Wei Lai

    发明人： Jean Wang ,  Francis Ko ,  Ping-Hsu Chen ,  Henry Lo ,  Chih-Wei Lai

    IPC分类号： G06F19/00

    CPC分类号： H01L22/20 ,  G01N21/9501 ,  H01L22/12

    摘要： A method of monitoring uniformity of a wafer is provided. A wafer parameter is selected. Manufacturing data is collected. The manufacturing data includes measurements of the selected wafer parameter. An average offset profile of the wafer parameter for a first and second wafer is determined using the manufacturing data. The first and second wafer are associated with a product type and were processed by a processing tool. An offset profile for a third wafer is predicted for a wafer using the average offset profile. The third wafer is associated with the product type and was processed by the processing tool.

    摘要翻译： 提供了一种监测晶片均匀性的方法。 选择晶圆参数。 收集制造数据。 制造数据包括所选晶片参数的测量。 使用制造数据确定第一和第二晶片的晶片参数的平均偏移轮廓。 第一和第二晶片与产品类型相关联并且由处理工具处理。 使用平均偏移轮廓为晶片预测第三晶片的偏移轮廓。 第三个晶片与产品类型相关联，并由加工工具处理。

    Method to implement stress free polishing
    43.
    发明授权
    Method to implement stress free polishing 有权
    实施无压力抛光的方法

    公开(公告)号：US07544606B2

    公开(公告)日：2009-06-09

    申请号：US11142215

    申请日：2005-06-01

    申请人： Jean Wang ,  Chia-Ming Yang ,  Henry Lo ,  Joshua Tseng

    发明人： Jean Wang ,  Chia-Ming Yang ,  Henry Lo ,  Joshua Tseng

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76843 ,  H01L21/02068 ,  H01L21/32115 ,  H01L21/7684 ,  H01L21/76877

    摘要： A method of forming a metal feature in a low-k dielectric layer is provided. The method includes forming an opening in a low-k dielectric layer, forming a metal layer having a substantially planar surface over the low-k dielectric layer using spin-on method, and stress free polishing the metal layer. Preferably, the metal layer comprises copper or copper alloys. The metal layer preferably includes a first sub layer having a substantially non-planar surface and a second sub layer having a substantially planar surface on the first sub layer.

    摘要翻译： 提供了一种在低k电介质层中形成金属特征的方法。 该方法包括在低k电介质层中形成开口，使用旋转方法在​​低k电介质层上形成具有基本平坦表面的金属层，并且对金属层进行无应力的研磨。 优选地，金属层包括铜或铜合金。 金属层优选地包括具有基本非平面表面的第一子层和在第一子层上具有基本平坦表面的第二子层。

    Method for forming dual damascenes with supercritical fluid treatments
    46.
    发明申请
    Method for forming dual damascenes with supercritical fluid treatments 有权
    用超临界流体处理形成双重大马士革的方法

    公开(公告)号：US20070241455A1

    公开(公告)日：2007-10-18

    申请号：US11240965

    申请日：2005-09-30

    申请人： Ching-Ya Wang ,  Joshua Tseng ,  Henry Lo ,  Jean Wang

    发明人： Ching-Ya Wang ,  Joshua Tseng ,  Henry Lo ,  Jean Wang

    IPC分类号： H01L23/48

    CPC分类号： H01L23/53238 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31133 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76831 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10S438/963 ,  H01L2924/00

    摘要： A method for forming a damascene structure by providing a single process solution for resist ashing while avoiding and repairing plasma etching damage as well as removing absorbed moisture in the dielectric layer, the method including providing a substrate comprising an uppermost photoresist layer and an opening extending through a thickness of an inter-metal dielectric (IMD) layer to expose an underlying metal region; and, carrying out at least one supercritical fluid treatment comprising supercritical CO2, a first co-solvent, and an additive selected from the group consisting of a metal corrosion inhibitor and a metal anti-oxidation agent to remove the uppermost photoresist layer, as well as including an optional dielectric insulating layer bond forming agent.

    摘要翻译： 一种通过提供用于抗蚀剂灰化的单一工艺溶液来形成镶嵌结构的方法，同时避免和修复等离子体蚀刻损伤以及去除介电层中的吸收的水分，所述方法包括提供包括最上面的光致抗蚀剂层和延伸穿过的开口 金属间电介质（IMD）层的厚度以暴露下面的金属区域; 并且进行至少一种超临界流体处理，其包括超临界CO 2，第一共溶剂和选自金属缓蚀剂和金属抗氧化剂的添加剂以除去最上面的光致抗蚀剂层，以及 包括可选的介电绝缘层结合剂。

    Planarizing method employing hydrogenated silicon nitride planarizing stop layer
    48.
    发明授权
    Planarizing method employing hydrogenated silicon nitride planarizing stop layer 有权
    采用氢化氮化硅平面化停止层的平面化方法

    公开(公告)号：US07129151B2

    公开(公告)日：2006-10-31

    申请号：US10701802

    申请日：2003-11-04

    申请人： Ping Chuang ,  Henry Lo ,  Mei Shang Zhou

    发明人： Ping Chuang ,  Henry Lo ,  Mei Shang Zhou

    IPC分类号： H01L21/20

    CPC分类号： H01L21/7684 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/31053 ,  H01L21/3185 ,  H01L21/76229 ,  H01L21/76829

    摘要： A planarizing method for forming a patterned planarized aperture fill layer within an aperture employs a planarizing stop layer formed of a reductant based material, such as but not limited to a hydrogenated silicon nitride material. The reductant based material provides the planarizing stop layer with enhanced planarizing stop properties. The method is particularly useful within the context of CMP planarizing methods.

    摘要翻译： 用于在孔内形成图案化的平坦化孔填充层的平面化方法采用由还原剂基材料形成的平坦化阻挡层，例如但不限于氢化氮化硅材料。 基于还原剂的材料提供具有增强的平坦化停止性质的平坦化停止层。 该方法在CMP平面化方法的上下文中是特别有用的。

    Method for improving low-K dielectrics by supercritical fluid treatments
    49.
    发明申请
    Method for improving low-K dielectrics by supercritical fluid treatments 有权
    通过超临界流体处理改善低K电介质的方法

    公开(公告)号：US20060073697A1

    公开(公告)日：2006-04-06

    申请号：US10956640

    申请日：2004-09-30

    申请人： Ching-Ya Wang ,  Joshua Tseng ,  Henry Lo

    发明人： Ching-Ya Wang ,  Joshua Tseng ,  Henry Lo

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76826 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76877

    摘要： A method for treating an inter-metal dielectric (IMD) layer to improve a mechanical strength and/or repair plasma etching damage including providing a low-K silicon oxide containing dielectric insulating layer; and carrying out a super critical fluid treatment of the low-K dielectric insulating layer including supercritical CO2 and a solvent including a silicon bond forming substituent having a bonding energy greater than a Si—H to replace at least a portion of the Si—H bonds with the silicon bond forming substituent.

    摘要翻译： 一种用于处理金属间电介质（IMD）层以改善机械强度和/或修复等离子体蚀刻损伤的方法，包括提供含有低K氧化硅的介电绝缘层; 并对包括超临界CO 2的低K电介质绝缘层进行超临界流体处理，并且包括具有大于Si-H的键合能力的形成硅键的取代基的溶剂至少替代 一部分Si-H与形成硅键的取代基键合。