Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same

    公开(公告)号:US09054298B2

    公开(公告)日:2015-06-09

    申请号:US13439817

    申请日:2012-04-04

    摘要: A spin transfer torque magnetic random access memory (STTMRAM) element and a method of manufacturing the same is disclosed having a free sub-layer structure with enhanced internal stiffness. A first free sub-layer is deposited, the first free sub-layer being made partially of boron (B), annealing is performed of the STTMRAM element at a first temperature after depositing the first free sub-layer to reduce the B content at an interface between the first free sub-layer and the barrier layer, the annealing causing a second free sub-layer to be formed on top of the first free sub-layer and being made partially of B, the amount of B of the second free sub-layer being greater than the amount of B in the first free sub-layer. Cooling down the STTMRAM element to a second temperature that is lower than the first temperature and depositing a third free sub-layer directly on top of the second free layer, with the third free sub-layer being made partially of boron (B), wherein the amount of B in the third sub-free layer is less than the amount of B in the second free sub-layer.

    Initialization method of a perpendicular magnetic random access memory (MRAM) device
    42.
    发明授权
    Initialization method of a perpendicular magnetic random access memory (MRAM) device 有权
    垂直磁随机存取存储器(MRAM)器件的初始化方法

    公开(公告)号:US08971100B2

    公开(公告)日:2015-03-03

    申请号:US13546169

    申请日:2012-07-11

    IPC分类号: G11C11/00

    摘要: Methods using a sequence of externally generated magnetic fields to initialize the magnetization directions of each of the layers in perpendicular MTJ MRAM elements for data and reference bits when the required magnetization directions are anti-parallel are described. The coercivity of the fixed pinned and reference layers can be made unequal so that one of them can be switched by a magnetic field that will reliably leave the other one unswitched. Embodiments of the invention utilize the different effective coercivity fields of the pinned, reference and free layers to selectively switch the magnetization directions using a sequence of magnetic fields of decreasing strength. Optionally the chip or wafer can be heated to reduce the required field magnitude. It is possible that the first magnetic field in the sequence can be applied during an annealing step in the MRAM manufacture process.

    摘要翻译: 描述了当所需的磁化方向为反平行时,使用外部产生的磁场序列来初始化用于数据和参考位的垂直MTJ MRAM元件中的每个层的磁化方向的方法。 可以使固定的固定和参考层的矫顽力不相等,使得它们中的一个可以通过可靠地离开另一个非磁性的磁场来切换。 本发明的实施例利用被钉扎,参考和自由层的不同有效矫顽力场,使用一系列降低强度的磁场来选择性地切换磁化方向。 可选地,可以加热芯片或晶片以减少所需的场强。 可以在MRAM制造过程中的退火步骤期间施加序列中的第一磁场。

    Method for magnetic screening of arrays of magnetic memories
    43.
    发明授权
    Method for magnetic screening of arrays of magnetic memories 有权
    磁记录阵列的磁屏蔽方法

    公开(公告)号:US08553452B2

    公开(公告)日:2013-10-08

    申请号:US13314470

    申请日:2011-12-08

    IPC分类号: G11C11/16

    CPC分类号: G11C11/161 G11C11/165

    摘要: A testing method is described that applies a sequence external magnetic fields of varying strength to MRAM cells (such as those with MTJ memory elements) in chips or wafers to selectively screen out cells with low or high thermal stability factor. The coercivity (Hc) is used as a proxy for thermal stability factor (delta). In the various embodiments the sequence, direction and strength of the external magnetic fields is used to determine the high coercivity cells that are not switched by a normal field and the low coercivity cells that are switched by a selected low field. In some embodiment the MRAM's standard internal electric current can be used to switch the cells. Standard circuit-based resistance read operations can be used to determine the response of each cell to these magnetic fields and identify the abnormal high and low coercivity cells.

    摘要翻译: 描述了一种测试方法,其将具有不同强度的序列外部磁场施加到芯片或晶片中的MRAM单元(例如具有MTJ存储元件的那些),以选择性地筛选具有低或高热稳定性因子的单元。 矫顽力(Hc)用作热稳定因子(delta)的代表。 在各种实施例中,外部磁场的顺序,方向和强度用于确定不被正常场切换的高矫顽力单元以及通过选定的低场切换的低矫顽力单元。 在一些实施例中,MRAM的标准内部电流可用于切换电池。 可以使用标准的基于电路的电阻读取操作来确定每个单元对这些磁场的响应并识别异常的高和低矫顽力单元。

    Grace state and pacing in link aggregation
    46.
    发明授权
    Grace state and pacing in link aggregation 有权
    Grace状态和起搏在链路聚合

    公开(公告)号:US09374298B2

    公开(公告)日:2016-06-21

    申请号:US13466657

    申请日:2012-05-08

    IPC分类号: H04L12/709 H04L12/703

    摘要: In one embodiment, one or more indicia of stress are monitored. Based on the one or more indicia of stress, it is determined a stress condition exists. In response to the stress condition, one or more link aggregation actors and partners are caused to enter a grace state for a grace period. While the one or more link aggregation actors and partners are in the grace state, link aggregation formation is paced on a plurality of links by delaying formation of one or more new link aggregation groups on the plurality of links until a hold is released. Upon expiration of the grace period, the grace state is exited.

    摘要翻译: 在一个实施例中,监视一个或多个应力标记。 基于一个或多个应力标记,确定存在应力条件。 为了应对压力情况,一个或多个链路聚合行为者和伙伴被引入宽限期的宽限期。 当一个或多个链路聚合参与者和伙伴处于宽限期状态时,通过延迟多个链路上的一个或多个新的链路聚合组的形成直到释放保持,在多个链路上进行链路聚合形成。 在宽限期结束时,退出恩典状态。

    Perpendicular magnetic medium with shields between tracks
    48.
    发明授权
    Perpendicular magnetic medium with shields between tracks 有权
    轨道之间具有屏蔽的垂直磁性介质

    公开(公告)号:US08795763B2

    公开(公告)日:2014-08-05

    申请号:US12005182

    申请日:2007-12-26

    IPC分类号: G11B5/74

    摘要: A track shield structure is disclosed that enables higher track density to be achieved in a patterned track medium without increasing adjacent track erasure and side reading. This is accomplished by placing a soft magnetic shielding structure in the space that is present between the tracks in the patterned medium. A process for manufacturing the added shielding structure is also described.

    摘要翻译: 公开了一种轨道屏蔽结构,其能够在图案化的轨道介质中实现更高的轨道密度,而不增加相邻轨迹擦除和侧面读数。 这通过在存在于图案化介质中的轨道之间的空间中放置软磁屏蔽结构来实现。 还描述了用于制造附加的屏蔽结构的方法。

    MR sensor with flux guide enhanced hard bias structure
    49.
    发明授权
    MR sensor with flux guide enhanced hard bias structure 有权
    带传感器的MR传感器增强了硬偏置结构

    公开(公告)号:US08659292B2

    公开(公告)日:2014-02-25

    申请号:US12660909

    申请日:2010-03-05

    IPC分类号: G01R33/02

    摘要: A CPP MR sensor interposes a tapered soft magnetic flux guide (FG) layer between a hard magnetic biasing layer (HB) and the free layer of the sensor stack. The flux guide channels the flux of the hard magnetic biasing layer to effectively bias the free layer, while eliminating instability problems associated with magnetostatic coupling between the hard bias layers and the upper and lower shields surrounding the sensor when the reader-shield-spacing (RSS) is small.

    摘要翻译: CPP MR传感器将锥形软磁通导向器(FG)层介于硬磁偏置层(HB)和传感器堆叠的自由层之间。 磁通引导件引导硬磁偏置层的磁通,以有效地偏置自由层,同时消除与读取器屏蔽间隔(RSS)之间的硬偏置层与传感器周围的上下屏蔽之间的静磁耦合相关的不稳定性问题 ) 是小。

    Method of manufacturing an enhanced hard bias layer in thin film magnetoresistive sensors
    50.
    发明授权
    Method of manufacturing an enhanced hard bias layer in thin film magnetoresistive sensors 有权
    在薄膜磁阻传感器中制造增强型硬偏置层的方法

    公开(公告)号:US08490279B2

    公开(公告)日:2013-07-23

    申请号:US12924363

    申请日:2010-09-24

    IPC分类号: G11B5/187

    摘要: A method of forming a hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed. A HB layer is formed with easy axis growth perpendicular to an underlying seed layer which is formed above a substrate and along two sidewalls of the sensor. In one embodiment, a conformal soft magnetic layer that may be a top shield is deposited on the HB layer to provide direct exchange coupling that compensates HB surface charges. Optionally, a thin capping layer on the HB layer enables magneto-static shield-HB coupling. After HB initialization, HB regions along the sensor sidewalls have magnetizations that are perpendicular to the sidewalls as a result of surface charges near the seed layer. Sidewalls may be extended into the substrate (bottom shield) to give enhanced protection against side reading.

    摘要翻译: 公开了形成用于纵向偏置MR传感器中的自由层的硬偏置(HB)结构的方法。 形成具有垂直于底层种子层的易于轴生长的HB层,其形成在衬底上并沿着传感器的两个侧壁。 在一个实施例中,可以是顶部屏蔽的共形软磁性层沉积在HB层上以提供补偿HB表面电荷的直接交换耦合。 可选地,HB层上的薄覆盖层可实现磁静电屏蔽-HB耦合。 在HB初始化之后,沿着传感器侧壁的HB区域由于种子层附近的表面电荷而具有垂直于侧壁的磁化。 侧壁可以延伸到基板(底部屏蔽)中,以提供更强的防侧读保护。