公开(公告)号：US20130285054A1

公开(公告)日：2013-10-31

申请号：US13992367

申请日：2011-12-06

申请人： Masao Moriguchi ,  Yohsuke Kanzaki ,  Yudai Takanishi ,  Takatsugu Kusumi ,  Hiroshi Matsukizono

发明人： Masao Moriguchi ,  Yohsuke Kanzaki ,  Yudai Takanishi ,  Takatsugu Kusumi ,  Hiroshi Matsukizono

IPC分类号： H01L27/15

CPC分类号： H01L27/15 ,  G02F1/1368 ,  H01L21/46 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

摘要： A semiconductor device according to the present invention includes: a gate electrode (62) of a thin film transistor (10) and an oxygen supply layer (64), the gate electrode (62) and the oxygen supply layer (64) being formed on a substrate (60); a gate insulating layer (66) formed on the gate electrode (62) and the oxygen supply layer (64); an oxide semiconductor layer (68) of the thin film transistor (10), the oxide semiconductor layer (68) being formed on the gate insulating layer (66); and a source electrode (70S) and a drain electrode (70d) of the thin film transistor (10), the source electrode (70S) and the drain electrode (70d) being formed on the gate insulating layer (66) and the oxide semiconductor layer (68).

摘要翻译： 根据本发明的半导体器件包括：薄膜晶体管（10）的栅电极（62）和氧供给层（64），栅电极（62）和供氧层（64）形成在 基板（60）; 形成在所述栅电极（62）和所述供氧层（64）上的栅绝缘层（66）。 所述薄膜晶体管（10）的氧化物半导体层（68），所述氧化物半导体层（68）形成在所述栅极绝缘层（66）上; 以及所述薄膜晶体管（10）的源电极（70S）和漏电极（70d），所述源极电极（70S）和所述漏极电极（70d）形成在所述栅极绝缘层（66）上，并且所述氧化物半导体 层（68）。

公开(公告)号：US20120292627A1

公开(公告)日：2012-11-22

申请号：US13519563

申请日：2010-11-11

申请人： Masao Moriguchi ,  Yohsuke Kanzaki ,  Tsuyoshi Inoue

发明人： Masao Moriguchi ,  Yohsuke Kanzaki ,  Tsuyoshi Inoue

IPC分类号： H01L29/786

CPC分类号： H01L27/1214 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14678

摘要： Disclosed is a photosensor element that is provided with a gate electrode (11da) disposed on an insulating substrate (10), a gate insulation film (12) disposed so as to cover the gate electrode (11da), a semiconductor layer (15db) disposed on the gate insulating film (12) so as to overlap the gate electrode (11da), and a source electrode (16da) and a drain electrode (16db) provided on the semiconductor layer (15db) so as to overlap the gate electrode (11da) and so as to face each other. The semiconductor layer (15db) is provided with an intrinsic semiconductor layer (13db) in which a channel region (C) is defined and an extrinsic semiconductor layer (14db) that is laminated on the intrinsic semiconductor layer (13db) such that the channel region (C) is exposed therefrom. The intrinsic semiconductor layer (13db) is an amorphous silicon layer containing nanocrystalline silicon particles.

摘要翻译： 公开了一种光传感元件，其设置有设置在绝缘基板（10）上的栅电极（11da），设置为覆盖栅电极（11da）的栅极绝缘膜（12），设置有半导体层（15db） 在所述栅极绝缘膜（12）上与所述栅电极（11da）重叠，以及设置在所述半导体层（15db）上的源极电极（16da）和漏电极（16db），以与所述栅极电极 ），以便彼此面对。 半导体层（15db）设置有其中限定沟道区（C）的本征半导体层（13db）和层叠在本征半导体层（13db）上的非本征半导体层（14db），使得沟道区 （C）。 本征半导体层（13db）是含有纳米晶硅颗粒的非晶硅层。

公开(公告)号：US20110101354A1

公开(公告)日：2011-05-05

申请号：US12864461

申请日：2009-01-08

申请人： Yuichi Saito ,  Masao Moriguchi ,  Akihiro Kohno

发明人： Yuichi Saito ,  Masao Moriguchi ,  Akihiro Kohno

IPC分类号： H01L33/16 ,  H01L21/336

CPC分类号： H01L29/78669 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78678

摘要： A semiconductor device 101 includes: a substrate 1; an active layer 4 provided on the substrate 1, the active layer 4 including a channel region 4c and a first region 4a and a second region 4b that are respectively located on opposite sides of the channel region 4c; a first contact layer 6a and a second contact layer 6b which are respectively in contact with the first region 4a and the second region 4b of the active layer 4; a first electrode 7 electrically coupled to the first region 4a via the first contact layer 6a; a second electrode 8 electrically coupled to the second region 4b via the second contact layer 6b; and a gate electrode 2 which is provided such that a gate insulating layer 3 is interposed between the gate electrode 2 and the active layer 4, the gate electrode 2 being configured to control a conductivity of the channel region 4c. The active layer 4 contains silicon. The semiconductor device further includes an oxygen-containing silicon layer 5 between the active layer 4 and the first and second contact layers 6a, 6b. The oxygen-containing silicon layer 5 contains oxygen at a concentration higher than the active layer 4 and the first and second contact layers 6a, 6b.

摘要翻译： 半导体器件101包括：衬底1; 设置在基板1上的有源层4，有源层4包括分别位于沟道区域4c的相对侧上的沟道区域4c和第一区域4a和第二区域4b; 分别与有源层4的第一区域4a和第二区域4b接触的第一接触层6a和第二接触层6b; 经由第一接触层6a电耦合到第一区域4a的第一电极7; 经由第二接触层6b电耦合到第二区域4b的第二电极8; 栅极电极2被设置为使得栅极绝缘层3插入在栅极电极2和有源层4之间，栅电极2被配置为控制沟道区域4c的导电性。 有源层4含有硅。 半导体器件还包括有源层4和第一和第二接触层6a，6b之间的含氧硅层5。 含氧硅层5含有浓度高于有源层4和第一和第二接触层6a，6b的氧。

公开(公告)号：US20050170568A1

公开(公告)日：2005-08-04

申请号：US11099198

申请日：2005-04-04

申请人： Masao Moriguchi ,  Apostolos Voutsas ,  Mark Crowder

发明人： Masao Moriguchi ,  Apostolos Voutsas ,  Mark Crowder

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L29/16 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L21/02686 ,  H01L21/0268 ,  H01L21/2022 ,  H01L21/2026 ,  H01L29/16 ,  H01L29/66757 ,  H01L29/78675

摘要： A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon (a-Si) and using a MISPC process to form poly-Si film in a first area of the a-Si film. The method then anneals a second area, included in the first area, using a Laser-Induced Lateral Growth (LILaC) process. In some aspects, a 2N-shot laser irradiation process is used as the LILaC process. In some aspects, a directional solidification process is used as the LILaC process. In response to using the MISPC film as a precursor film, the method forms low angle grain boundaries in poly-Si in the second area.

摘要翻译： 提供了高质量各向同性多晶硅（poly-Si）和制造高质量各向同性多晶硅膜的方法。 该方法包括在a-Si膜的第一区域中形成非晶硅膜（a-Si）并使用MISPC工艺形成多晶硅膜。 然后，该方法使用激光诱导横向生长（LILaC）过程退火包括在第一区域中的第二区域。 在一些方面，使用2N射击激光照射工艺作为LILaC工艺。 在一些方面，使用定向凝固方法作为LILaC方法。 响应于使用MISPC膜作为前体膜，该方法在第二区域中在多晶硅中形成低角度晶界。

公开(公告)号：US20050037551A1

公开(公告)日：2005-02-17

申请号：US10640771

申请日：2003-08-13

申请人： Masao Moriguchi ,  Apostolos Voutsas ,  Mark Crowder

发明人： Masao Moriguchi ,  Apostolos Voutsas ,  Mark Crowder

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L29/16 ,  H01L29/786 ,  H01L29/04 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L21/02686 ,  H01L21/0268 ,  H01L21/2022 ,  H01L21/2026 ,  H01L29/16 ,  H01L29/66757 ,  H01L29/78675

摘要： A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon (a-Si) and using a MISPC process to form poly-Si film in a first area of the a-Si film. The method then anneals a second area, included in the first area, using a Laser-Induced Lateral Growth (LILaC) process. In some aspects, a 2N-shot laser irradiation process is used as the LILaC process. In some aspects, a directional solidification process is used as the LILaC process. In response to using the MISPC film as a precursor film, the method forms low angle grain boundaries in poly-Si in the second area.

公开(公告)号：US09377644B2

公开(公告)日：2016-06-28

申请号：US14006479

申请日：2012-03-16

申请人： Masao Moriguchi ,  Yohsuke Kanzaki ,  Yudai Takanishi ,  Takatsugu Kusumi

发明人： Masao Moriguchi ,  Yohsuke Kanzaki ,  Yudai Takanishi ,  Takatsugu Kusumi

IPC分类号： G02F1/1333 ,  G02F1/1339 ,  G02F1/1362 ,  H01L29/786 ,  G02F1/1345 ,  G02F1/1368 ,  G02F1/1343 ,  H01L27/12

CPC分类号： G02F1/133345 ,  G02F1/1339 ,  G02F1/1345 ,  G02F1/136277 ,  G02F1/1368 ,  G02F2001/133311 ,  G02F2001/133357 ,  G02F2001/134372 ,  G02F2201/501 ,  H01L27/1248 ,  H01L29/78606 ,  H01L29/78636

摘要： A TFT 1 is formed on a glass substrate 11, and a flattening resin film 17 covering the TFT 1 is formed. Furthermore, a moisture-proof protective film 18 covering the entire surface of the flattening resin film 17 is formed. For the protective film 18, a SiO2 film, a SiN film, a SiON film, or a stacked film thereof is used. The edge surfaces of the flattening resin film 17 are disposed on the inner side of or under a seal 4, and are formed in a tapered shape. By this, the entry of moisture into the flattening resin film 17 is prevented, preventing display degradation. This effect becomes noticeable in a display device including an oxide semiconductor TFT.

摘要翻译： 在玻璃基板11上形成TFT1，形成覆盖TFT1的平坦化树脂膜17。 此外，形成覆盖平坦化树脂膜17的整个表面的防湿保护膜18。 对于保护膜18，使用SiO 2膜，SiN膜，SiON膜或其叠层膜。 平坦化树脂膜17的边缘表面设置在密封件4的内侧或下方，并且形成为锥形。 由此，防止水分进入平坦化树脂膜17，防止显示劣化。 在包括氧化物半导体TFT的显示装置中，这种效果变得显着。

公开(公告)号：US09190526B2

公开(公告)日：2015-11-17

申请号：US14111887

申请日：2012-04-12

申请人： Masao Moriguchi ,  Yohsuke Kanzaki ,  Yudai Takanishi ,  Takatsugu Kusumi

发明人： Masao Moriguchi ,  Yohsuke Kanzaki ,  Yudai Takanishi ,  Takatsugu Kusumi

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L21/00 ,  H01L51/40 ,  H01L29/786 ,  G02F1/1368 ,  H01L29/66 ,  H01L27/12

CPC分类号： H01L29/7869 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/6675

摘要： A thin film transistor includes a gate electrode (11a), a gate insulating film (12a) covering the gate electrode (11a), a semiconductor layer (13a) made of an oxide semiconductor and provided on the gate insulating film (12a), a source electrode (16aa) and a drain electrode (16ab) provided on the semiconductor layer (13a) via easily reducible metal layers (15aa, 15ab) and spaced apart from each other, with a channel region (C) interposed therebetween, a conductive region (E) provided in the semiconductor layer (13a), and a diffusion reducing portion (13ca, 13cb) provided in the semiconductor layer (13a), for reducing diffusion of the conductive region (E) into the channel region (C).

摘要翻译： 薄膜晶体管包括栅电极（11a），覆盖栅极（11a）的栅极绝缘膜（12a），由栅极绝缘膜（12a）设置的由氧化物半导体构成的半导体层（13a）， 源极电极（16aa）和漏极电极（16ab），其经由易于还原的金属层（15aa，15ab）设置在半导体层（13a）上并且彼此间隔开，并且沟道区域（C）彼此间隔开，导电区域 （13a），以及设置在半导体层（13a）中的扩散减少部分（13ca，13cb），用于减少导电区域（E）扩散到沟道区域（C）中。

公开(公告)号：US08686528B2

公开(公告)日：2014-04-01

申请号：US13147640

申请日：2010-01-29

申请人： Yudai Takanishi ,  Masao Moriguchi

发明人： Yudai Takanishi ,  Masao Moriguchi

IPC分类号： H01L27/146

CPC分类号： H01L27/124 ,  H01L29/41733

摘要： A semiconductor device of the present invention includes: a lower electrode (110); a contact layer (130) including a first contact layer (132), a second contact layer (134) and a third contact layer (136) overlapping with a semiconductor layer (120); and an upper electrode (140) including a first upper electrode (142), a second upper electrode (144) and a third upper electrode (146). The second contact layer (134) includes a first region (134a), and a second region (134b) separate from the first region (134a), and the second upper electrode (144) is directly in contact with the semiconductor layer (120) in a region between the first region (134a) and the second region (134b) of the second contact layer (134).

摘要翻译： 本发明的半导体器件包括：下电极（110）; 包括与半导体层（120）重叠的第一接触层（132），第二接触层（134）和第三接触层（136）的接触层（130）; 和包括第一上电极（142），第二上电极（144）和第三上电极（146）的上电极（140）。 第二接触层（134）包括第一区域（134a）和与第一区域（134a）分离的第二区域（134b），第二上部电极（144）直接与半导体层（120）接触， 在第二接触层（134）的第一区域（134a）和第二区域（134b）之间的区域中。

公开(公告)号：US08436353B2

公开(公告)日：2013-05-07

申请号：US13001397

申请日：2009-09-14

申请人： Masao Moriguchi ,  Tokuo Yoshida ,  Yuhichi Saitoh ,  Yasuaki Iwase ,  Yosuke Kanzaki ,  Mayuko Sakamoto

发明人： Masao Moriguchi ,  Tokuo Yoshida ,  Yuhichi Saitoh ,  Yasuaki Iwase ,  Yosuke Kanzaki ,  Mayuko Sakamoto

IPC分类号： H01L29/41

CPC分类号： H01L29/78696 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/78609 ,  H01L29/78645

摘要： A semiconductor device 10 according to the present invention includes an active layer 14 supported on a substrate 11 and having two channel regions 14c1, 14c2, a source region 14s, a drain region 14d, and an intermediate region 14m formed between the two channel regions 14c1, 14c2; a contact layer 16 having a source contact region 16s, a drain contact region 16d, and an intermediate contact region 16m; a source electrode 18s; a drain electrode 18d; an intermediate electrode 18m; and a gate electrode 12 facing the two channel regions and the intermediate region through a gate insulating film 13 interposed therebetween. An entire portion of the intermediate electrode 18m that is located between the first channel region 14c1 and the second channel region 14c2 overlaps the gate electrode 12 through the intermediate region 14m and the gate insulating film 13.

摘要翻译： 根据本发明的半导体器件10包括支撑在基板11上并具有两个沟道区域14c1,14c2的有源层14，形成在两个沟道区域14c1之间的源极区域14s，漏极区域14d和中间区域14m ，14c2; 具有源极接触区域16s，漏极接触区域16d和中间接触区域16m的接触层16; 源电极18s; 漏电极18d; 中间电极18m; 以及通过插入其间的栅极绝缘膜13面对两个沟道区域和中间区域的栅电极12。 位于第一沟道区域14c1和第二沟道区域14c2之间的中间电极18m的整个部分通过中间区域14m和栅极绝缘膜13与栅电极12重叠。

公开(公告)号：US08378348B2

公开(公告)日：2013-02-19

申请号：US12864461

申请日：2009-01-08

申请人： Yuichi Saito ,  Masao Moriguchi ,  Akihiko Kohno

发明人： Yuichi Saito ,  Masao Moriguchi ,  Akihiko Kohno

IPC分类号： H01L31/00

CPC分类号： H01L29/78669 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78678

摘要： A semiconductor device 101 includes: a substrate 1; an active layer 4 provided on the substrate 1 and including a channel region 4c, and a first region 4a and a second region 4b that are respectively located on opposite sides of the channel region 4c; first and second contact layers 6a and 6b respectively in contact with the first and second regions 4a and 4b of the active layer 4; a first electrode 7 electrically coupled to the first region 4a via the first contact layer 6a; a second electrode 8 electrically coupled to the second region 4b via the second contact layer 6b; and a gate electrode 2 provided such that a gate insulating layer 3 is interposed between the gate electrode 2 and the active layer 4, the gate electrode 2 being configured to control a conductivity of the channel region 4c. The active layer 4 contains silicon. The semiconductor device further includes an oxygen-containing silicon layer 5 between the active layer 4 and the first and second contact layers 6a, 6b. The layer 5 contains oxygen at a concentration higher than the active layer 4 and the first and second contact layers 6a, 6b.

摘要翻译： 半导体器件101包括：衬底1; 设置在基板1上并且包括沟道区域4c的有源层4和分别位于沟道区域4c的相对侧上的第一区域4a和第二区域4b; 分别与有源层4的第一和第二区域4a和4b接触的第一和第二接触层6a和6b; 经由第一接触层6a电耦合到第一区域4a的第一电极7; 经由第二接触层6b电耦合到第二区域4b的第二电极8; 栅极电极2被设置为使得栅极绝缘层3插入在栅电极2和有源层4之间，栅电极2被配置为控制沟道区域4c的导电性。 有源层4含有硅。 半导体器件还包括有源层4和第一和第二接触层6a，6b之间的含氧硅层5。 层5含有浓度高于有源层4和第一和第二接触层6a，6b的氧。